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Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junction in avalanche breakdown

Abstract : We present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon ~Si! and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast neutron irradiation. In particular, it is demonstrated that the neutron irradiation affects both the semiconductor and the overlying passivation oxide layer.
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https://hal.archives-ouvertes.fr/hal-00323131
Contributor : Jean Paul Salvestrini Connect in order to contact the contributor
Submitted on : Thursday, December 2, 2021 - 9:22:33 PM
Last modification on : Tuesday, December 7, 2021 - 3:15:12 AM

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M. Lahbabi, A. Ahaitouf, M. Fliyou, E. Abarkan, J.P. Charles, et al.. Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junction in avalanche breakdown. Journal of Applied Physics, American Institute of Physics, 2004, 95 (4), pp.1822-1828. ⟨10.1063/1.1643188⟩. ⟨hal-00323131⟩

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