Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer - Université de Lorraine Access content directly
Journal Articles Physical Review Letters Year : 2014

Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer

Abstract

We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
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Dates and versions

hal-01381247 , version 1 (14-10-2016)

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J. Gorchon, J. Curiale, A. Lemaître, N. Moisan, M. Cubukcu, et al.. Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer. Physical Review Letters, 2014, 112 (2), pp.026601 ⟨10.1103/PhysRevLett.112.026601⟩. ⟨hal-01381247⟩
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