Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells

Abstract : We propose a new and simple analytical model taking into account of the polarization charge effects in order to assess the performance of InGaN-based PIN solar cells. The main contribution of this study consists in the derivation of new expressions of both diffusion and generation recombination currents to take into account of the polarization charges. The validity of the model is assessed through a comparison to numerical calculations, using the one dimensional self-consistent Schrödinger-Poisson equations and previously published theoretical and experimental works. The model is shown to be in a good agreement with experimental data. As expected, it is shown that the spontaneous and piezoelectric polarizations have a beneficial effect when the InGaN layer is grown on the N-face GaN/InGaN solar cells.
Type de document :
Article dans une revue
Superlattices and Microstructures, Elsevier, 2016, 100, pp.168 - 178. 〈10.1016/j.spmi.2016.09.016〉
Liste complète des métadonnées

https://hal.univ-lorraine.fr/hal-01521110
Contributeur : Stephanie Vergerio <>
Soumis le : jeudi 11 mai 2017 - 14:32:06
Dernière modification le : jeudi 5 avril 2018 - 12:30:21

Identifiants

Citation

Rabeb Belghouthi, Jean Paul Salvestrini, Mohamed Hichem Gazzeh, Christyves Chevallier. Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells. Superlattices and Microstructures, Elsevier, 2016, 100, pp.168 - 178. 〈10.1016/j.spmi.2016.09.016〉. 〈hal-01521110〉

Partager

Métriques

Consultations de la notice

101