Radiation effects in GaN materials and devices, J. Mater. Chem. C, vol.206, issue.5, pp.877-887, 2013. ,
DOI : 10.1039/C2TC00039C
High internal and external quantum efficiency InGaN/GaN solar cells, Applied Physics Letters, vol.98, issue.2, p.21102, 2011. ,
DOI : 10.1364/JOSA.72.000899
Simulation of doping levels and deep levels in InGaN-based single-junction solar cell, Journal of Materials Science, vol.47, issue.11, pp.4595-4603, 2012. ,
DOI : 10.1007/s10853-012-6321-6
Demonstration of a III???Nitride/Silicon Tandem Solar Cell, Applied Physics Express, vol.2, issue.12, p.122202, 2009. ,
DOI : 10.1143/APEX.2.122202
N alloys, Physical Review B, vol.84, issue.7, p.75327, 2011. ,
DOI : 10.1103/PhysRevB.84.075327
InGaN/GaN multiple quantum well solar cells with long operating wavelengths, Applied Physics Letters, vol.94, issue.6, p.63505, 2009. ,
DOI : 10.1063/1.1436270
InGaN doping for high carrier concentration in plasma-assisted molecular beam epitaxy, physica status solidi (c), vol.11, issue.3-4, pp.381-384, 2014. ,
DOI : 10.1002/pssc.201300460
InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices, Journal of Applied Physics, vol.4, issue.11, p.114505, 2012. ,
DOI : 10.1063/1.1493229
Numerical simulation of InGaN Schottky solar cell, Materials Science in Semiconductor Processing, vol.41, pp.219-225, 2016. ,
DOI : 10.1016/j.mssp.2015.09.001
URL : https://hal.archives-ouvertes.fr/hal-01256060
A TCAD-based modeling of GaN/InGaN/Si solar cells, Semiconductor Science and Technology, vol.27, issue.3, p.35019, 2012. ,
DOI : 10.1088/0268-1242/27/3/035019
Finite element simulations of compositionally graded InGaN solar cells, Solar Energy Materials and Solar Cells, vol.94, issue.3, pp.478-483, 2010. ,
DOI : 10.1016/j.solmat.2009.11.010
Bowing of the band gap pressure coefficient in InxGa1???xN alloys, Journal of Applied Physics, vol.103, issue.3, pp.33514-33515, 2008. ,
DOI : 10.1103/PhysRevB.73.045201
An electron mobility model for wurtzite GaN, Solid-State Electronics, vol.49, issue.6, pp.889-895, 2005. ,
DOI : 10.1016/j.sse.2005.03.006
Band gap narrowing and radiative efficiency of silicon doped GaN, Journal of Applied Physics, vol.7, issue.10, p.103502, 2008. ,
DOI : 10.1063/1.366309
Rate equation analysis of efficiency droop in InGaN light-emitting diodes, Applied Physics Letters, vol.95, issue.8, p.81114, 2009. ,
DOI : 10.1063/1.3064164
A numerical study of Auger recombination in bulk InGaN, Applied Physics Letters, vol.97, issue.23, p.231118, 2010. ,
DOI : 10.1063/1.360422
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence, Applied Physics Letters, vol.86, issue.5, pp.52105-52108, 2005. ,
DOI : 10.1063/1.372098
URL : http://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/5537/1/APL86-5.pdf
An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride, Applied Physics A, vol.92, issue.4, pp.1113-1117, 2014. ,
DOI : 10.1007/s00339-013-7798-9
Modeling the optical constants of hexagonal GaN, InN, and AlN, Journal of Applied Physics, vol.8, issue.5, pp.2848-2853, 1999. ,
DOI : 10.1103/PhysRevE.55.4797
Version 6.4.1) The Sage Development Team http, Sage Mathematics Software Computing in Science Engineering, vol.13, pp.22-30, 2011. ,
SciPy: Open source scientific tools for Python http, 2001. ,
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes, Optics Express, vol.20, issue.S6, pp.812-821, 2012. ,
DOI : 10.1364/OE.20.00A812
Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies, Applied Physics Letters, vol.99, issue.9, p.92109, 2011. ,
DOI : 10.1007/s11664-010-1453-4