Coherent phonons in Si/ SiGe superlattices - Université de Lorraine
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2007

Coherent phonons in Si/ SiGe superlattices

Résumé

There are several classes of coherent phonons whose generation mechanisms are completely different: impulsive stimulated Raman scattering, Brillouin oscillations, and coherent longitudinal-acoustic-phonon Bragg reflection. All of these are investigated in Si/ SiGe superlattices using a picosecond ultrasonics technique at room temperature. Bragg reflection for a single vibrational mode is related to gaps in the phonon-dispersion relation at the center and the boundary of the folded Brillouin zone. The two lowest minigaps are observed at 283 and 527 GHz. Theoretical calculations of phonon-dispersion relation and phonon reflection rate are given to explain experimental results.
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Dates et versions

hal-01535961 , version 1 (09-06-2017)

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Younès Ezzahri, Stéphane Grauby, Jean-Michel Rampnoux, Hélène Michel, Gilles Pernot, et al.. Coherent phonons in Si/ SiGe superlattices. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (19), pp. 195309. ⟨10.1103/PhysRevB.75.195309⟩. ⟨hal-01535961⟩
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