H. Fujiwara and M. Kondo, Effects of a???Si:H layer thicknesses on the performance of a???Si:H???c???Si heterojunction solar cells, Journal of Applied Physics, vol.101, issue.5, p.54516, 2007.
DOI : 10.1016/0022-3093(85)90599-X

Q. Wang, M. R. Page, E. Iwaniczko, Y. Xu, L. Roybal et al., Efficient heterojunction solar cells on p-type crystal silicon wafers, Applied Physics Letters, vol.96, issue.1, p.13507, 2010.
DOI : 10.1016/S0927-0248(00)00242-7

H. Ohta, R. Huang, and Y. Ikuhara, Large enhancement of the thermoelectric Seebeck coefficient for amorphous oxide semiconductor superlattices with extremely thin conductive layers, physica status solidi (RRL) Rapid Research Letters, pp.105-107, 2008.
DOI : 10.1002/pssr.200802017

R. W. Fathauer, T. George, E. W. Jones, W. T. Pike, A. Ksendzov et al., New class of si-based superlattices: Alternating layers of crystalline si and porous amorphous si[sub 1 -x]ge[sub x] alloys, Applied Physics Letters, issue.19, pp.612350-2352, 1992.

M. Tosolini, L. Colombo, and M. Peressi, -Si:H interfaces, Physical Review B, vol.13, issue.157, p.75301, 2004.
DOI : 10.1103/PhysRevB.13.5188

M. Nolan, M. Legesse, and G. Fagas, Surface orientation effects in crystalline???amorphous silicon interfaces, Physical Chemistry Chemical Physics, vol.107, issue.43, pp.15173-15179, 2012.
DOI : 10.1103/PhysRevLett.107.255502

N. Bernstein, M. J. Aziz, and E. Kaxiras, Amorphous-crystal interface in silicon: A tight-binding simulation, Physical Review B, vol.48, issue.8, pp.4579-4583, 1998.
DOI : 10.1002/pssa.2210480207

J. L. Feldman, N. Bernstein, D. A. Papaconstantopoulos, and M. J. , Tight-binding study of structure and vibrations of amorphous silicon, Physical Review B, vol.266, issue.269, p.165201, 2004.
DOI : 10.1103/PhysRevB.61.12586

J. L. Feldman and N. Bernstein, Vibrational spectroscopy of an amorphous???crystalline sandwich structure for silicon:??? Numerical results, Physical Review B, vol.307, issue.310, p.235214, 2004.
DOI : 10.1080/09500830110041666

N. Bernstein, J. L. Feldman, and M. Fornari, Structural model of amorphous silicon annealed with tight binding, Physical Review B, vol.11, issue.20, p.205202, 2006.
DOI : 10.1063/1.1740589

S. Erkoc, T. Halicioglu, and W. A. Tiller, Computer simulation of thin amorphous Si films on crystalline Si substrates, Journal of Non-Crystalline Solids, vol.94, issue.1, pp.28-35, 1987.
DOI : 10.1016/S0022-3093(87)80257-0

, Crystalline-Amorphous Interface: Molecular Dynamics Simulation of Thermal Conductivity, 2002.

S. Agarwal, Amorphous silicon-based superlattices, Bulletin of Materials Science, vol.97, issue.98, pp.1257-1278, 1991.
DOI : 10.1142/9789814434157_0006

C. M. Yang, Manipulation of Si and Ge crystallization, 1997.

P. M. Voyles, N. Zotov, S. M. Nakhmanson, D. A. Drabold, J. M. Gibson et al., Structure and physical properties of paracrystalline atomistic models of amorphous silicon, Journal of Applied Physics, vol.61, issue.9, pp.904437-4451, 2001.
DOI : 10.1103/PhysRevB.62.4477

M. M. Treacy and K. B. Borisenko, The Local Structure of Amorphous Silicon, Science, vol.19, issue.2, p.950, 2012.
DOI : 10.1088/0953-8984/19/45/455202

W. H. Zachariasen, THE ATOMIC ARRANGEMENT IN GLASS, Journal of the American Chemical Society, vol.54, issue.10, pp.3841-3851, 1932.
DOI : 10.1021/ja01349a006

S. Roorda and L. J. Lewis, Comment on "The Local Structure of Amorphous Silicon", Science, vol.79, issue.25, p.1539, 2012.
DOI : 10.1063/1.445731

K. Laaziri, S. Kycia, S. Roorda, M. Chicoine, J. L. Robertson et al., High Resolution Radial Distribution Function of Pure Amorphous Silicon, Physical Review Letters, vol.53, issue.17, pp.3460-3463, 1999.
DOI : 10.1103/PhysRevB.53.9791

D. Choudhary and P. Clancy, Characterizing the nature of virtual amorphous silicon, The Journal of Chemical Physics, vol.316, issue.17, 2005.
DOI : 10.1103/PhysRevB.48.7685

W. D. Luedtke and U. Landman, Preparation and melting of amorphous silicon by molecular-dynamics simulations, Physical Review B, vol.45, issue.10, pp.4656-4663, 1988.
DOI : 10.1103/PhysRevLett.45.2036

M. Ishimaru, S. Munetoh, and T. Motooka, Generation of amorphous silicon structures by rapid quenching:???A molecular-dynamics study, Physical Review B, vol.36, issue.23, pp.15133-15138, 1997.
DOI : 10.1103/PhysRevB.36.6539

C. Fusco, T. Albaret, and A. Tanguy, Role of local order in the small-scale plasticity of model amorphous materials, Physical Review E, vol.82, issue.6, p.66116, 2010.
DOI : 10.1088/0953-8984/21/8/084204

L. Pizzagalli, . Godet, . Gunol, . Brochard, . Holmstrom et al., A new parametrization of the stillingerweber potential for an improved description of defects and plasticity of silicon, Journal of Physics: Condensed Matter, issue.5, p.25055801, 2013.

F. Wooten, K. Winer, and D. Weaire, Computer Generation of Structural Models of Amorphous Si and Ge, Physical Review Letters, vol.53, issue.13, pp.1392-1395, 1985.
DOI : 10.1103/PhysRevLett.53.2429

P. N. Keating, Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure, Physical Review, vol.4, issue.2, pp.637-645, 1966.
DOI : 10.1098/rspa.1959.0192

R. L. Vink, G. T. Barkema, W. F. Van-der-weg, and N. Mousseau, Fitting the Stillinger???Weber potential to amorphous silicon, Journal of Non-Crystalline Solids, vol.282, issue.2-3, pp.248-255, 2001.
DOI : 10.1016/S0022-3093(01)00342-8

N. Mousseau and G. T. Barkema, Traveling through potential energy landscapes of disordered materials: The activation-relaxation technique, Physical Review E, vol.49, issue.2, pp.2419-2424, 1998.
DOI : 10.1103/PhysRevB.49.9441

D. Mark, J. R. Kluge, A. Ray, and . Rahman, Amorphous-silicon formation by rapid quenching: A molecular-dynamics study, Phys. Rev. B, vol.36, pp.4234-4237, 1987.

R. Biswas, G. S. Grest, and C. M. Soukoulis, Generation of amorphous-silicon structures with use of molecular-dynamics simulations, 31] I. ? Stich, R. Car, and M. Parrinello. Amorphous silicon studied by ab initio molecular dynamics: Preparation, structure, and properties, pp.7437-744111092, 1987.
DOI : 10.1103/PhysRevLett.49.1271

J. Tersoff, Empirical interatomic potential for silicon with improved elastic properties, Physical Review B, vol.36, issue.14, pp.9902-9905, 1988.
DOI : 10.1103/PhysRevB.36.4234

M. Parrinello and A. Rahman, Polymorphic transitions in single crystals: A new molecular dynamics method, Journal of Applied Physics, vol.52, issue.12, pp.7182-7190, 1981.
DOI : 10.1103/PhysRevA.22.1690

J. Guénolé, J. Godet, and S. Brochard, Plasticity in crystalline-amorphous core-shell Si nanowires controlled by native interface defects, Physical Review B, vol.87, issue.4, p.45201, 2013.
DOI : 10.1088/0268-1242/25/2/024006

J. Michael, A. S. Demkowicz, and . Argon, Liquidlike atomic environments act as plasticity carriers in amorphous silicon, Phys. Rev. B, vol.72, p.245205, 2005.

P. Keblinski, . Bazant, M. Rk-dash, and . Treacy, Thermodynamic behavior of a model covalent material described by the environment-dependent interatomic potential, Physical Review B, vol.91, issue.207, p.64104, 2002.
DOI : 10.1021/j100308a038

J. Fortner and J. S. Lannin, Radial distribution functions of amorphous silicon, Physical Review B, vol.37, issue.98, pp.5527-5530, 1989.
DOI : 10.1103/PhysRevB.37.10154

D. Beeman, R. Tsu, and M. F. Thorpe, Structural information from the Raman spectrum of amorphous silicon, Physical Review B, vol.25, issue.2, pp.874-878, 1985.
DOI : 10.1103/PhysRevLett.25.222

R. L. Vink, G. T. Barkema, and W. F. Van-der-weg, Raman spectra and structure of amorphous Si, Physical Review B, vol.35, issue.481, p.115210, 2001.
DOI : 10.1103/PhysRevB.35.2456

P. Newby, B. Canut, J. M. Bluet, S. Gomes, M. Isaiev et al., Amorphisation and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions, Journal of Applied Physics, vol.114, 2013.

D. Donadio and G. Galli, Temperature Dependence of the Thermal Conductivity of Thin Silicon Nanowires, Nano Letters, vol.10, issue.3, pp.847-851, 2010.
DOI : 10.1021/nl903268y

Y. He and G. Galli, Microscopic Origin of the Reduced Thermal Conductivity of Silicon Nanowires, Physical Review Letters, vol.108, issue.21, p.215901, 2012.
DOI : 10.1103/PhysRevLett.102.125503

K. Termentzidis, P. Chantrenne, and P. Keblinski, Nonequilibrium molecular dynamics simulation of the in-plane thermal conductivity of superlattices with rough interfaces, Physical Review B, vol.37, issue.21, p.79214307, 2009.
DOI : 10.1103/PhysRevB.75.094512

URL : https://hal.archives-ouvertes.fr/hal-00473500

D. G. Cahill, H. E. Fischer, T. Klitsner, E. T. Swartz, and R. O. , Thermal conductivity of thin films: Measurements and understanding, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.7, issue.3, pp.1259-1266, 1989.
DOI : 10.1116/1.576265

Y. Hee-lee, R. Biswas, C. M. Soukoulis, C. Z. Wang, C. T. Chan et al., Molecular-dynamics simulation of thermal conductivity in amorphous silicon, Physical Review B, vol.53, issue.8, pp.6573-6580, 1991.
DOI : 10.1080/13642818608240654

S. Plimpton, Fast Parallel Algorithms for Short-Range Molecular Dynamics, Journal of Computational Physics, vol.117, issue.1, pp.1-19, 1995.
DOI : 10.1006/jcph.1995.1039

URL : https://www.osti.gov/servlets/purl/10176421

S. Plimpton, R. Pollock, and M. Stevens, Proc. of the Eighth SIAM Conference on Parallel Processing for Scientific Computing, 1997.

. Papanikolaou, Lattice thermal conductivity of SiC nanowires, Journal of Physics: Condensed Matter, vol.20, issue.13, p.135201, 2008.
DOI : 10.1088/0953-8984/20/13/135201

C. Dames and G. Chen, Theoretical phonon thermal conductivity of Si/Ge superlattice nanowires, Journal of Applied Physics, vol.231, issue.2, pp.682-693, 2004.
DOI : 10.1088/0022-3719/6/10/006

A. L. Boukai, Y. Bunimovich, J. Tahir-kheli, J. Yu, W. A. Goddard et al., Silicon nanowires as efficient thermoelectric materials, Nature, vol.16, issue.7175, pp.168-171, 2008.
DOI : 10.1038/nature06458

A. L. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett et al., Enhanced thermoelectric performance of rough silicon nanowires, Nature, vol.3, issue.7175, pp.163-167, 2008.
DOI : 10.1038/nature06381

X. Zianni, Diameter-modulated nanowires as candidates for high thermoelectric energy conversion efficiency, Applied Physics Letters, vol.97, issue.23, p.233106, 2010.
DOI : 10.1016/j.physe.2008.01.008

X. Zianni, Efficient thermoelectric energy conversion on quasi-localized electron states in diameter modulated nanowires, Nanoscale Research Letters, vol.6, issue.1, p.286, 2011.
DOI : 10.1016/j.physe.2010.02.022

L. Denis, A. I. Nika, D. V. Cocemasov, A. A. Crismari, and . Balandin, Thermal Thermal conductivity reduction with lattice and cross-section modulations of silicon nanowires 14 conductivity inhibition in phonon engineered core-shell cross-section modulated si/ge nanowires, Applied Physics Letters, issue.21, p.102213109, 2013.

D. L. Nika, A. I. Cocemasov, C. I. Isacova, A. A. Balandin, V. M. Fomin et al., Suppression of phonon heat conduction in cross-section-modulated nanowires, Physical Review B, vol.85, issue.20, p.205439, 2012.
DOI : 10.1088/1742-6596/92/1/012086

S. Crawford, Fundamental Insights into Nanowire Diameter Modulation and the Liquid/Solid Interface, Nano Letters, vol.13, issue.1, pp.226-232, 2013.
DOI : 10.1021/nl3039019

D. Grzegorz, A. Sulka, L. Brzzka, and . Liu, Fabrication of diameter-modulated and ultrathin porous nanowires in anodic aluminum oxide templates, Electrochimica Acta, vol.56, issue.14, pp.4972-4979, 2011.

P. Newby, B. Canut, J. M. Bluet, S. Gomes, M. Isaiev et al., Amorphisation and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions, Journal of Applied Physics, vol.114, 2013.
DOI : 10.1063/1.4812280

K. Termentzidis and S. Merabia, Molecular Dynamics -Theoretical Developments and Applications in Nanotechnoly and Energy, 2012.

K. Termentzidis, J. Parasuraman, C. D. Cruz, S. Merabia, D. Angelescu et al., Thermal conductivity and thermal boundary resistance of nanostructures, Nanoscale Research Letters, vol.6, issue.1, p.288, 2011.
DOI : 10.1103/PhysRevB.48.16373

URL : https://hal.archives-ouvertes.fr/hal-01020163

C. Abs-da-cruz, K. Termentzidis, P. Chantrenne, and X. Kleber, Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions, Journal of Applied Physics, vol.22, issue.3, p.34309, 2011.
DOI : 10.1103/PhysRevB.68.144112

URL : https://hal.archives-ouvertes.fr/hal-01024958

P. Keblinski, . Bazant, M. Rk-dash, and . Treacy, Thermodynamic behavior of a model covalent material described by the environment-dependent interatomic potential, Physical Review B, vol.91, issue.207, p.64104, 2002.
DOI : 10.1021/j100308a038

H. Frank, T. A. Stillinger, and . Weber, Computer simulation of local order in condensed phases of silicon, Phys. Rev. B, vol.31, pp.5262-5271, 1985.

R. L. Vink, G. T. Barkema, W. F. Van-der-weg, and N. Mousseau, Fitting the Stillinger???Weber potential to amorphous silicon, Journal of Non-Crystalline Solids, vol.282, issue.2-3, pp.248-255, 2001.
DOI : 10.1016/S0022-3093(01)00342-8

P. K. Schelling, S. R. Phillpot, and P. Keblinski, Comparison of atomic-level simulation methods for computing thermal conductivity, Physical Review B, vol.70, issue.14, p.65144306, 2002.
DOI : 10.1103/PhysRevLett.70.3764

K. Termentzidis, P. Chantrenne, and P. Keblinski, Nonequilibrium molecular dynamics simulation of the in-plane thermal conductivity of superlattices with rough interfaces, Physical Review B, vol.37, issue.21, p.79214307, 2009.
DOI : 10.1103/PhysRevB.75.094512

URL : https://hal.archives-ouvertes.fr/hal-00473500

K. Termentzidis, S. Merabia, P. Chantrenne, and P. Keblinski, Cross-plane thermal conductivity of superlattices with rough interfaces using equilibrium and non-equilibrium molecular dynamics, International Journal of Heat and Mass Transfer, vol.54, issue.9-10, pp.2014-2020, 2011.
DOI : 10.1016/j.ijheatmasstransfer.2011.01.001

URL : https://hal.archives-ouvertes.fr/hal-00593482

P. Chantrenne and J. Barrat, Analytical model for the thermal conductivity of nanostructures, Superlattices and Microstructures, vol.35, issue.3-6, pp.173-186, 2004.
DOI : 10.1016/j.spmi.2003.11.011

URL : https://hal.archives-ouvertes.fr/hal-00360627

P. Chantrenne and J. L. Barrat, Finite Size Effects in Determination of Thermal Conductivities: Comparing Molecular Dynamics Results With Simple Models, Journal of Heat Transfer, vol.377, issue.264, pp.577-585, 2004.
DOI : 10.1016/S0370-1573(02)00558-6

URL : https://hal.archives-ouvertes.fr/hal-00000396

S. Plimpton, Fast Parallel Algorithms for Short-Range Molecular Dynamics, Journal of Computational Physics, vol.117, issue.1, pp.1-19, 1995.
DOI : 10.1006/jcph.1995.1039

URL : https://www.osti.gov/servlets/purl/10176421

S. Plimpton, R. Pollock, and M. Stevens, Proc. of the Eighth SIAM Conference on Parallel Processing for Scientific Computing, 1997.

A. France-lanord, E. Blandre, T. Albaret, S. Merabia, D. Lacroix et al., Atomistic amorphous/crystalline interfaces modelling for superlattices and nanowires. Journal of Physics: Thermal conductivity reduction with lattice and cross-section modulations of silicon nanowires 15 Condensed Matter, 2013.

S. Nose, A unified formulation of the constant temperature molecular dynamics methods, The Journal of Chemical Physics, vol.81, issue.1, pp.511-519, 1984.
DOI : 10.1080/00268978400100801

K. Termentzidis, T. Barreteau, Y. Ni, S. Merabia, X. Zianni et al., Modulated SiC nanowires: Molecular dynamics study of their thermal properties, Physical Review B, vol.44, issue.6, p.125410, 2013.
DOI : 10.1115/1.2826085

URL : https://hal.archives-ouvertes.fr/hal-01431385

Y. He and G. Galli, Microscopic Origin of the Reduced Thermal Conductivity of Silicon Nanowires, Physical Review Letters, vol.108, issue.21, p.215901, 2012.
DOI : 10.1103/PhysRevLett.102.125503

A. Rajabpour, S. M. Vaez-allaei, and F. Kowsary, Interface thermal resistance and thermal rectification in hybrid graphene-graphane nanoribbons: A nonequilibrium molecular dynamics study, Applied Physics Letters, vol.99, issue.5, p.99051917, 2011.
DOI : 10.1063/1.1524305

G. Domingues, J. Saulnier, and S. Volz, Thermal relaxation times and heat conduction in ??-cristobalite and ??-quartz silica structures, Superlattices and Microstructures, vol.35, issue.3-6, pp.227-237, 2004.
DOI : 10.1016/j.spmi.2004.01.006

URL : https://hal.archives-ouvertes.fr/hal-00132576

W. Humphrey, K. Dalke, and . Schulten, VMD: Visual molecular dynamics, Journal of Molecular Graphics, vol.14, issue.1, pp.33-38, 1996.
DOI : 10.1016/0263-7855(96)00018-5

F. Sansoz, Surface Faceting Dependence of Thermal Transport in Silicon Nanowires, Nano Letters, vol.11, issue.12, pp.5378-5382, 2011.
DOI : 10.1021/nl2029688

D. Donadio and G. Galli, Temperature Dependence of the Thermal Conductivity of Thin Silicon Nanowires, Nano Letters, vol.10, issue.3, pp.847-851, 2010.
DOI : 10.1021/nl903268y

D. Donadio and G. Galli, Atomistic Simulations of Heat Transport in Silicon Nanowires, Physical Review Letters, vol.102, issue.19, p.195901, 2009.
DOI : 10.1103/PhysRevLett.96.055902

. Références, Arnaud Bournel. nitnslCours sur la physique des composants (M2 micronanotechnologies , M2R composants et antennes pour les télécommunications) : chapitre II, Phonons, 2006.

C. Abs-da-cruz, K. Termentzidis, P. Chantrenne, and X. Kleber, Molecular dynamics simulations for the prediction of thermal conductivity of bulk silicon and silicon nanowires: Influence of interatomic potentials and boundary conditions, Journal of Applied Physics, vol.22, issue.3, p.34309, 2011.
DOI : 10.1103/PhysRevB.68.144112

URL : https://hal.archives-ouvertes.fr/hal-01024958

G. Sebastian, G. Volz, and . Chen, Molecular dynamics simulation of thermal conductivity of silicon nanowires, Physics Letters, vol.75, issue.14, pp.2056-2058, 1999.

. Shuai-chuang-wang, . Xin, . Liang, . Xiang, T. Xu et al., Thermal conductivity of silicon nanowire by nonequilibrium molecular dynamics simulations, Journal of Applied Physics, vol.105, issue.1, p.14316, 2009.
DOI : 10.1103/PhysRevB.65.144306

A. L. Boukai, Y. Bunimovich, J. Tahir-kheli, J. Yu, W. A. Goddard et al., Silicon nanowires as efficient thermoelectric materials. nitnslNature, pp.168-171, 2008.

A. L. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett et al., Arun Majumdar, and Peidong Yang. Enhanced thermoelectric performance of rough silicon nanowires. nitnslNature, pp.163-167, 2008.

P. Newby, B. Canut, J. M. Bluet, S. Gomes, M. Isaiev et al., Amorphisation and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions, 2013.

X. Zianni, Diameter-modulated nanowires as candidates for high thermoelectric energy conversion efficiency, Applied Physics Letters, vol.97, issue.23, p.233106, 2010.
DOI : 10.1016/j.physe.2008.01.008

X. Zianni, Efficient thermoelectric energy conversion on quasi-localized electron states in diameter modulated nanowires, Nanoscale Research Letters, vol.6, issue.1, p.286, 2011.
DOI : 10.1016/j.physe.2010.02.022

N. Papanikolaou, Lattice thermal conductivity of sic nanowires. nitnslJournal of Physics : Condensed Matter, p.135201, 2008.

C. Dames and G. Chen, Theoretical phonon thermal conductivity of Si/Ge superlattice nanowires, Journal of Applied Physics, vol.231, issue.2, pp.682-693, 2004.
DOI : 10.1088/0022-3719/6/10/006

C. Kittel, nitnslPhysique de l'état solide. Dunod, 2007.

C. Cohen-tannoudji, B. Diu, and F. Laloë, , 1997.

, Jacov Frenkel. nitnslWave mechanics, 1936.

A. Einstein, Planck's theory of radiation and the theory of specific heat. nitnslAnnalen der Physik, pp.180-190, 1907.

P. Debye, The theory of specific heat. nitnslAnnalen der Physik, pp.789-839, 1912.

A. Matthiessen and C. Vogt, On the Influence of Temperature on the Electric Conducting-Power of Alloys, Philosophical Transactions of the Royal Society of London, vol.154, issue.0, pp.167-200, 1864.
DOI : 10.1098/rstl.1864.0004

R. Peierls, Zur kinetischen Theorie der Wärmeleitung in Kristallen, pp.1055-1101, 1929.

M. Terry and . Tritt, nitnslThermal conductivity : theory, properties, and applications, 2005.

J. Heron, nitnslTransport des phonons à l'échelle du nanomètre, 2009.

H. Frank, T. A. Stillinger, and . Weber, Computer simulation of local order in condensed phases of silicon, nitnslPhys. Rev. B, vol.31, pp.5262-5271, 1985.

R. L. Vink, G. T. Barkema, W. F. Van-der-weg, and N. Mousseau, Fitting the stillinger-weber potential to amorphous silicon. nitnslJournal of Non-Crystalline Solids, pp.2-3248, 2001.

P. Keblinski, . Bazant, M. Rk-dash, and . Treacy, Thermodynamic behavior of a model covalent material described by the environment-dependent interatomic potential, Physical Review B, vol.91, issue.207, p.64104, 2002.
DOI : 10.1021/j100308a038

S. Plimpton, Fast Parallel Algorithms for Short-Range Molecular Dynamics, Journal of Computational Physics, vol.117, issue.1, pp.1-19, 1995.
DOI : 10.1006/jcph.1995.1039

S. Plimpton, R. Pollock, and M. Stevens, nitnslProc. of the Eighth SIAM Conference on Parallel Processing for Scientific Computing, 1997.

W. Humphrey, K. Dalke, and . Schulten, VMD: Visual molecular dynamics, Journal of Molecular Graphics, vol.14, issue.1, pp.33-38, 1996.
DOI : 10.1016/0263-7855(96)00018-5

J. Li, Atomeye : an efficient atomistic configuration viewer. nitnslModelling Simul, Mater. Sci. Eng, vol.11, pp.173-177, 2003.