, using the equipment from the platform TUBE-Davm funded by FEDER (EU), ANR, the Region Lorraine, and Grand Nancy

S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang et al.,

I. V. Dubonos, A. A. Grigorieva, and . Firsov, Electric field effect in atomically thin carbon films, Science, vol.306, p.666, 2004.

K. A. Castro-neto, F. Guinea, N. M. Peres, K. S. Novoselov, and A. ,

K. Geim, The electronic properties of graphene, Rev. Mod. Phys, vol.81, p.109, 2009.

G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier et al., Electronics based on twodimensional materials, Nat. Nanotechnol, vol.9, p.768, 2014.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Atomically thin MoS 2 : a new direct-gap semiconductor, Phys. Rev. Lett, vol.105, p.136805, 2010.

M. Xu, T. Liang, M. Shi, and H. Chen, Graphene-like two-dimensional materials, Chem. Rev, vol.113, p.3766, 2013.

D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks, and M. C. Hersam, Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides, ACS Nano, vol.8, p.1102, 2014.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Single-layer MoS 2 transistors, Nat. Nanotechnol, vol.6, p.147, 2011.
DOI : 10.1038/nnano.2010.279

URL : https://infoscience.epfl.ch/record/164049/files/NatNano 6 135 (2011) Schwierz.pdf

D. Xiao, G. Liu, W. Feng, X. Xu, and W. Yao, Coupled spin and valley physics in monolayers of MoS 2 and other group-VI dichalcogenides, Phys. Rev. Lett, vol.108, p.196802, 2012.

S. Liang, H. Yang, P. Renucci, B. Tao, P. Laczkowski et al., Electrical spin injection and detection in molybdenum disulfide multilayer channel, Nat. Commun, vol.8, p.14947, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01654269

D. Pacil-e, J. C. Meyer, C. ¸. Girit, and A. Zettl, The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes, Appl. Phys. Lett, vol.92, p.133107, 2008.

Q. H. Wang, K. Kalantar-zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nat. Nanotechnol, vol.7, p.699, 2012.

K. Lee, R. Gatensby, N. Mcevoy, T. Hallam, and G. S. Duesberg, High performance sensors based on molybdenum disulfide thin films, Adv. Mater, vol.25, p.6699, 2013.

M. Bernardi, M. Palummo, and J. C. Grossman, Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials, Nano Lett, vol.13, p.3664, 2013.

R. Kurapati, K. Kostarelos, M. Prato, and A. Bianco, Biomedical uses for 2D materials beyond graphene: Current advances and challenges ahead, Adv. Mater, vol.28, p.6052, 2016.

X. Zhang, L. Hou, A. Ciesielski, and P. Samor, 2D materials beyond graphene for high-performance energy storage applications, Adv. Energy Mater, vol.6, p.1600671, 2016.

V. Tran, R. Soklaski, Y. Liang, and L. Yang, Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus, Phys. Rev. B, vol.89, p.235319, 2014.

H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu et al., Phosphorene: An unexplored 2D semiconductor with a high hole mobility, ACS Nano, vol.8, p.4033, 2014.

L. Li, Y. Yu, G. Ye, Q. Ge, X. Ou et al.,

. Zhang, Black phosphorus field-effect transistors, Nat. Nanotechnol, vol.9, p.372, 2014.

S. P. Koenig, R. A. Doganov, H. Schmidt, A. H. Castro-neto, and B. Ozyilmaz, Electric field effect in ultrathin black phosphorus, Appl. Phys. Lett, vol.104, p.103106, 2014.

F. Xia, H. Wang, and Y. Jia, Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics, Nat. Commun, vol.5, p.4458, 2014.

M. Buscema, D. J. Groenendijk, S. I. Blanter, G. A. Steele, H. S. Van-der-zant et al., Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors, Nano Lett, vol.14, p.3347, 2014.

A. Avsar, J. Y. Tan, M. Kurpas, M. Gmitra, K. Watanabe et al., Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes, Nat. Phys, vol.13, p.888, 2017.

Y. Du, H. Liu, Y. Deng, and P. D. Ye, Device perspective for black phosphorus field-effect transistors: Contact resistance, ambipolar and scaling, ACS Nano, vol.8, p.10035, 2014.

M. V. Kamalakar, B. N. Madhushankar, A. Dankert, and S. P. Dash, Low Schottky barrier black phosphorus field-effect devices with ferromagnetic tunnel contacts, Small, vol.11, p.2209, 2015.

J. Chen, P. M. Odenthal, A. G. Swartz, G. C. Floyd, H. Wen et al., Control of Schottky barriers in single layer MoS 2 transistors with ferromagnetic contacts, Nano Lett, vol.13, p.3106, 2013.

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 2007.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, Phonon limited mobility in n-type single-layer MoS 2 from first principles, Phys. Rev. B, vol.85, p.115317, 2012.

E. H. Hwang and S. D. Sarma, Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene, Phys. Rev. B, vol.77, p.115449, 2008.

E. Mariani, A. J. Pearce, and F. Von-oppen, Fictitious gauge fields in bilayer graphene, Phys. Rev. B, vol.86, p.165448, 2012.

H. Ochoa, E. V. Castro, M. I. Katsnelson, and F. Guinea, Temperaturedependent resistivity in bilayer graphene due to flexural phonons, Phys. Rev. B, vol.83, p.235416, 2011.

F. Xia, D. B. Farmer, Y. Lin, and P. Avouris, Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature, Nano Lett, vol.10, p.715, 2010.

Y. Lu, M. Tran, H. Jaffrès, P. Seneor, C. Deranlot et al.,

B. George, S. Epine, and G. Ababou, Spin-polarized inelastic tunneling through insulating barriers, Phys. Rev. Lett, vol.102, p.176801, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00663791

J. Appenzeller, M. Radosavljevic, J. Knoch, and P. Avouris, Tunneling versus thermionic emission in one-dimensional semiconductors, Phys. Rev. Lett, vol.92, p.48301, 2004.

Z. Chen, Y. M. Lin, M. J. Rooks, and P. Avouris, Graphene nano-ribbon electronics, Physica E, vol.40, p.228, 2007.

A. Anwar, B. Nabet, J. Culp, and F. Castro, Effects of electron confinement on thermionic emission current in a modulation doped heterostructure, J. Appl. Phys, vol.85, p.2663, 1999.

Y. Anugrah, M. C. Robbins, P. A. Crowell, and S. J. Koester, Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene, Appl. Phys. Lett, vol.106, p.103108, 2015.

W. Wang, Y. Liu, L. Tang, Y. Jin, T. Zhao et al., Controllable Schottky barriers between MoS 2 and permalloy, Sci. Rep, vol.4, p.6928, 2014.

A. Dankert, L. Langouche, M. V. Kamalakar, and S. P. Dash, High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts, ACS Nano, vol.8, pp.476-482, 2014.