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Electrically controlled switching of the magnetization state in multiferroic BaTiO3/CoFe submicrometer structures

Abstract : The development of reliable and highly energy efficient multiferroic nanosystems, which can function atroom temperature, is key for the design of ultralow-power magnetoelectric devices. Here, we report electricallycontrolled magnetic domain wall motion and magnetization switching in BaTiO3/Co50Fe50microstructures, atroom temperature. The perfect one-to-one connection between the ferroelectric domain pattern of the BaTiO3crystal and the ferromagnetic state of the CoFe microstructures, which relies on a strain-induced magneticanisotropy modification, is the cause of the observed magnetoelectric effect. As a result, the observed electricallydriven magnetization switching is highly reliable, independent of the shape and size of the microstructures.This is a key factor that makes the studied multiferroic system very promising for integration in real-worldmagnetoelectric devices.
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https://hal.univ-lorraine.fr/hal-02388437
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Submitted on : Sunday, December 1, 2019 - 9:36:59 PM
Last modification on : Friday, September 18, 2020 - 2:30:05 PM
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R Lo Conte, J. Gorchon, A. Mougin, C Lambert, A El-Ghazaly, et al.. Electrically controlled switching of the magnetization state in multiferroic BaTiO3/CoFe submicrometer structures. Physical Review Materials, American Physical Society, 2018, 2, ⟨10.1103/PhysRevMaterials.2.091402⟩. ⟨hal-02388437⟩

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