In this article, the nanocrystalline diamond (NCD) film low temperature deposition process on ZnO/Si, ZnO/LiNbO 3 , and ZnO/IDTs/LiNbO 3 sub-strates is investigated aiming at obtaining layered structures suitable for waveguiding layer acoustic wave (WLAW) devices. The NCD synthesis is performed at 250 C by using a distributed antenna array (DAA) microwave system operating in H 2 /CH 4 /CO 2 gas mixture at low pressure (<1 mbar). Since the ZnO layer is etched during the NCD growth process, the deposition of a thin AlN layer of few hundred nanometers in thickness on the considered substrates is performed and is shown to be effective as a protective layer. Diamond growth on AlN-coated ZnO/Si substrates emphasizes the ability of the DAA reactor to synthesize NCD films with properties similar to those obtained on silicon substrates. Besides adherent NCD films up to 300 nm thickness are synthesized on AlN-coated ZnO/LiNbO 3 substrates but stress in the layered structure appears during the plasma process. Finally, the feasibility of a NCD/AlN/ZnO/IDTs/LiNbO 3 layered structure, suitable for WLAW devices, is successfully demonstrated, even if the NCD film adherence must be further improved on the inter-digital transducers (IDTs) finger zone.