Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties - Université de Lorraine Access content directly
Journal Articles Materials Today Communications Year : 2019

Dates and versions

hal-03424455 , version 1 (10-11-2021)

Identifiers

Cite

Alexander Platonenko, Francesco Silvio Gentile, Jefferson Maul, Fabien Pascale, Eugene Kotomin, et al.. Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties. Materials Today Communications, 2019, 21, pp.100616. ⟨10.1016/j.mtcomm.2019.100616⟩. ⟨hal-03424455⟩
6 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More