Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties - Université de Lorraine
Journal Articles Materials Today Communications Year : 2019

Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties

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hal-03424455 , version 1 (08-02-2024)

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Alexander Platonenko, Francesco Silvio Gentile, Jefferson Maul, Fabien Pascale, Eugene Kotomin, et al.. Nitrogen interstitial defects in silicon. A quantum mechanical investigation of the structural, electronic and vibrational properties. Materials Today Communications, 2019, 21, pp.100616. ⟨10.1016/j.mtcomm.2019.100616⟩. ⟨hal-03424455⟩
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