Example of simulation of an experimental spectrum of silicon oxide film ,
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Applied Physics Letters, vol.117, issue.10, p.1046, 1990. ,
DOI : 10.1103/PhysRevB.38.5726
The structural and luminescence properties of porous silicon, Journal of Applied Physics, vol.261, issue.3, p.909, 1997. ,
DOI : 10.1126/science.261.5128.1567
Classification and control of the origin of photoluminescence from Si nanocrystals, Nature Nanotechnology, vol.18, issue.3, p.174, 2008. ,
DOI : 10.1038/nnano.2008.7
Light emission in thermally oxidized porous silicon: Evidence for oxide???related luminescence, Applied Physics Letters, vol.99, issue.25, p.3244, 1993. ,
DOI : 10.2109/jcersj.99.923
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.57, issue.15, p.11024, 1993. ,
DOI : 10.1103/PhysRevLett.57.249
Electron-hole interactions in silicon nanocrystals, Physical Review B, vol.51, issue.333, p.7455, 1997. ,
DOI : 10.1143/JPSJ.51.3553
Correlation between luminescence and structural properties of Si nanocrystals, Journal of Applied Physics, vol.87, issue.3, p.1295, 2000. ,
DOI : 10.1103/PhysRevLett.82.197
Etching mechanism and atomic structure of H???Si(111) surfaces prepared in NH4F, Electrochimica Acta, vol.40, issue.10, p.1353, 1997. ,
DOI : 10.1016/0013-4686(95)00071-L
Luminescence and structural study of porous silicon films, Journal of Applied Physics, vol.23, issue.5, p.2403, 1992. ,
DOI : 10.1021/j100164a070
Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2, Journal of Applied Physics, vol.48, issue.11, p.6128, 1999. ,
DOI : 10.1063/1.95842
Superlattices, Physical Review Letters, vol.10, issue.3, p.539, 1996. ,
DOI : 10.1016/0038-1101(67)90122-0
URL : https://hal.archives-ouvertes.fr/hal-00152534
Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices, Applied Physics Letters, vol.79, issue.13, p.2076, 2001. ,
DOI : 10.1103/PhysRevLett.82.197
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach, Applied Physics Letters, vol.80, issue.4, p.661, 2002. ,
DOI : 10.1103/PhysRevLett.82.197
Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2, Journal of Applied Physics, vol.5, issue.2, p.798, 2002. ,
DOI : 10.1103/PhysRevB.46.15578
Optical properties of silicon nanoclusters fabricated by ion implantation, Journal of Applied Physics, vol.42, issue.11, p.6018, 1998. ,
DOI : 10.1063/1.116150
Films: Si Clusters as Luminescent Centers, Japanese Journal of Applied Physics, vol.32, issue.Part 1, No. 9A, p.3840, 1993. ,
DOI : 10.1143/JJAP.32.3840
Nanocrystalline-silicon superlattice produced by controlled recrystallization, Applied Physics Letters, vol.72, issue.1, p.43, 1998. ,
DOI : 10.1063/1.116302
Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces, Physical Review B, vol.266, issue.269, p.8391, 2000. ,
DOI : 10.1016/S0022-3093(00)00033-8
Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices, Journal of Applied Physics, vol.87, issue.11, p.8165, 2000. ,
DOI : 10.1103/PhysRevLett.82.197
Influence of the annealing treatments on the luminescence properties of SiO???SiO2 multilayers, Journal of Applied Physics, vol.100, issue.12, p.123504, 2006. ,
DOI : 10.1103/PhysRevB.68.085327
Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs, Physical Review Letters, vol.40, issue.5, p.716, 1994. ,
DOI : 10.1103/PhysRevB.40.6149
Towards the First Silicon Laser " ; NATO Science Series II: Mathematics, Physics and Chemistry, 2003. ,
Light emission from silicon nanocrystals: Probing a single quantum dot, Applied Surface Science, vol.252, issue.15, p.5249, 2006. ,
DOI : 10.1016/j.apsusc.2005.12.030
Photoluminescence from single silicon quantum dots at room temperature, Journal of Luminescence, vol.98, issue.1-4, p.15, 2002. ,
DOI : 10.1016/S0022-2313(02)00246-6
Narrow Luminescence Linewidth of a Silicon Quantum Dot, Physical Review Letters, vol.262, issue.8, p.87405, 2005. ,
DOI : 10.1103/PhysRevB.54.R8373
Electron???phonon interactions in semiconductor nanocrystals, Journal of Luminescence, vol.70, issue.1-6, p.129, 1996. ,
DOI : 10.1016/0022-2313(96)00050-6
layer by a stencil-masked ultra-low energy ion implantation process, physica status solidi (a), vol.49, issue.68, p.487, 2007. ,
DOI : 10.1002/pssa.200673232
Photoluminescence characterization of few-nanocrystals electronic devices, Journal of Luminescence, vol.121, issue.2, p.340, 2006. ,
DOI : 10.1016/j.jlumin.2006.08.070
URL : https://hal.archives-ouvertes.fr/hal-01745048
Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends, IEEE Journal of Quantum Electronics, vol.34, issue.9, p.1612, 1998. ,
DOI : 10.1109/3.709578
Optical microcavities, Nature, vol.1, issue.6950, p.839, 2003. ,
DOI : 10.1238/Physica.Topical.076a00138
Luminescence properties of Si nanocrystals embedded in optical microcavities, Materials Science and Engineering: C, vol.19, issue.1-2, p.377, 2002. ,
DOI : 10.1016/S0928-4931(01)00424-6
Efficient Source of Single Photons: A Single Quantum Dot in a Micropost Microcavity, Physical Review Letters, vol.38, issue.23, p.233602, 2002. ,
DOI : 10.1038/35051009
Visible range whispering-gallery mode in microdisk array based on size-controlled Si nanocrystals, Applied Physics Letters, vol.88, issue.15, p.153120, 2006. ,
DOI : 10.1002/adma.200401126
Fundamental photophysics and optical loss processes in Si-nanocrystal-doped microdisk resonators, Physical Review A, vol.27, issue.2, p.23829, 2008. ,
DOI : 10.1109/50.802999
Probing the Spontaneous Emission Dynamics in Si-Nanocrystals-Based Microdisk Resonators, Physical Review Letters, vol.69, issue.10, p.103901, 2010. ,
DOI : 10.1364/OPEX.13.001202
Strong Purcell effect for InAs quantum boxes in three-dimensional solid-state microcavities, Journal of Lightwave Technology, vol.17, issue.11, p.2089, 1999. ,
DOI : 10.1109/50.802999
Purcell-Factor-Enhanced Scattering from Si Nanocrystals in an Optical Microcavity, Physical Review Letters, vol.103, issue.2, p.27406, 2009. ,
DOI : 10.1063/1.1804240
A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film, Journal of Physics E: Scientific Instruments, vol.9, issue.11, p.1002, 1976. ,
DOI : 10.1088/0022-3735/9/11/032
Determination of the thickness and optical constants of amorphous silicon, Journal of Physics E: Scientific Instruments, vol.16, issue.12, p.1214, 1983. ,
DOI : 10.1088/0022-3735/16/12/023
Correlation between luminescence and structural properties of Si nanocrystals, Journal of Applied Physics, vol.87, issue.3, p.1295, 2000. ,
DOI : 10.1103/PhysRevLett.82.197
Quantum confinement and recombination dynamics in silicon nanocrystals embedded in Si/SiO2 superlattices, Journal of Applied Physics, vol.87, issue.11, p.8165, 2000. ,
DOI : 10.1103/PhysRevLett.82.197
Kinetic study of group IV nanoparticles ion beam synthesized in SiO2, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.178, issue.1-4, p.17, 2001. ,
DOI : 10.1016/S0168-583X(01)00497-9
Structure and Defects in Amorphous Si???O Films, Japanese Journal of Applied Physics, vol.26, issue.Part 1, No. 1, p.22, 1986. ,
DOI : 10.1143/JJAP.26.22
Journal de Physique C: Physique de l, Etat Solide, vol.15, p.377, 1982. ,
films produced by plasma enhanced chemical vapor deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.4, issue.3, p.689, 1986. ,
DOI : 10.1116/1.573833
Vibrational local modes of a-SiO2:H and variation of local modes in different local environments, Journal of Applied Physics, vol.98, issue.12, p.5976, 1997. ,
DOI : 10.1116/1.583066
-Si:H, Physical Review B, vol.85, issue.98, p.13978, 1992. ,
DOI : 10.1063/1.451016
Electrons and phonons in amorphous pyramidally bonded solids, Solid State Communications, vol.20, issue.10, p.947, 1976. ,
DOI : 10.1016/0038-1098(76)90479-8
Calculation of phonon density of states for amorphous Si, Solid State Communications, vol.50, issue.4, p.367, 1984. ,
DOI : 10.1016/0038-1098(84)90387-9
Model investigation of the Raman spectra of amorphous silicon, Physical Review B, vol.45, issue.166, p.2938, 1996. ,
DOI : 10.1103/PhysRevB.45.4048
Computer Generation of Structural Models of Amorphous Si and Ge, Physical Review Letters, vol.53, issue.13, p.1392, 1985. ,
DOI : 10.1103/PhysRevLett.53.2429
Vibrational properties of amorphous Si and Ge, Physical Review B, vol.7, issue.10, p.2271, 1975. ,
DOI : 10.1088/0022-3719/7/10/001
The one phonon Raman spectrum in microcrystalline silicon, Solid State Communications, vol.39, issue.5, p.625, 1981. ,
DOI : 10.1016/0038-1098(81)90337-9
The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors, Solid State Communications, vol.58, issue.10, p.739, 1986. ,
DOI : 10.1016/0038-1098(86)90513-2
Comparison of models for Raman spectra of Si nanocrystals, Physical Review B, vol.53, issue.15, p.9263, 1996. ,
DOI : 10.1103/PhysRevLett.34.580
Raman shifts in Si nanocrystals, Applied Physics Letters, vol.48, issue.138, p.200, 1996. ,
DOI : 10.1063/1.117371
Si nanocrystal based memories: Effect of the nanocrystal density, Journal of Applied Physics, vol.638, issue.1, p.14310, 2006. ,
DOI : 10.1002/(SICI)1521-3951(199910)215:2<871::AID-PSSB871>3.0.CO;2-9
Quantum communication, Nature Photonics, vol.77, issue.3, p.165, 2007. ,
DOI : 10.1017/S0305004100019137
URL : https://hal.archives-ouvertes.fr/cel-00092981
Single dot optical spectroscopy of silicon nanocrystals: low temperature measurements, Optical Materials, vol.27, issue.5, p.973, 2005. ,
DOI : 10.1016/j.optmat.2004.08.046
Study of the photoluminescence of amorphous and crystalline silicon clusters in SiOx thin films, Optical Materials, vol.27, issue.5, p.983, 2005. ,
DOI : 10.1016/j.optmat.2004.08.048
Size evolution and photoluminescence of silicon nanocrystallites in evaporated SiOx thin films upon thermal processing, Applied Physics A, vol.74, issue.1, p.13, 2002. ,
DOI : 10.1007/s003390100993
films produced by plasma enhanced chemical vapor deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.4, issue.3, p.689, 1986. ,
DOI : 10.1116/1.573833
Vibrational local modes of a-SiO2:H and variation of local modes in different local environments, Journal of Applied Physics, vol.98, issue.12, p.5976, 1997. ,
DOI : 10.1116/1.583066
Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering, Applied Physics Letters, vol.69, issue.3, p.356, 1998. ,
DOI : 10.1103/PhysRevB.49.2238
Cathodoluminescence microcharacterization of the defect structure of quartz, Physical Review B, vol.175, issue.5, p.3122, 1995. ,
DOI : 10.1016/0022-3093(94)90007-8
structures, Physical Review B, vol.56, issue.23, p.15632, 1998. ,
DOI : 10.1103/PhysRevB.56.2137
Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers, Journal of Luminescence, vol.80, issue.1-4, p.285, 1999. ,
DOI : 10.1016/S0022-2313(98)00113-6
The origin of visible photoluminescence from silicon oxide thin films prepared by dual-plasma chemical vapor deposition, Journal of Applied Physics, vol.69, issue.10, p.5386, 1998. ,
DOI : 10.1016/0038-1098(80)91062-5
Investigation of postoxidation thermal treatments of Si/SiO[sub 2] interface in relationship to the kinetics of amorphous Si suboxide decomposition, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.16, issue.4, p.2171, 1998. ,
DOI : 10.1116/1.590302
Raman spectroscopy of Si-rich films: possibility of Si cluster formation, Journal of Physics: Condensed Matter, vol.8, issue.26, p.4823, 1996. ,
DOI : 10.1088/0953-8984/8/26/014
Electronic Structure of Amorphous Silicon Nanoclusters, Physical Review Letters, vol.76, issue.16, p.3161, 1997. ,
DOI : 10.1103/PhysRevLett.76.2961
Identification of radiative transitions in highly porous silicon, Journal of Physics: Condensed Matter, vol.5, issue.7, p.91, 1993. ,
DOI : 10.1088/0953-8984/5/7/003
Porous silicon formation: A quantum wire effect, Applied Physics Letters, vol.27, issue.8, p.856, 1991. ,
DOI : 10.1149/1.2086525
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.57, issue.15, p.11024, 1993. ,
DOI : 10.1103/PhysRevLett.57.249
Modified Raman confinement model for Si nanocrystals, Physical Review B, vol.73, issue.3, p.33307, 2006. ,
DOI : 10.1063/1.474168
Influence of the barrier thickness on the photoluminescence properties of amorphous Si/SiO multilayers, Journal of Luminescence, vol.113, issue.1-2, p.64, 2004. ,
DOI : 10.1016/j.jlumin.2004.08.053
Influence of the annealing treatments on the luminescence properties of SiO???SiO2 multilayers, Journal of Applied Physics, vol.100, issue.12, p.123504, 2006. ,
DOI : 10.1103/PhysRevB.68.085327
Solid State Electron, p.1311, 1996. ,
Microstructure and optical properties of free-standing porous silicon films: Size dependence of absorption spectra in Si nanometer-sized crystallites, Physical Review B, vol.47, issue.4, p.2827, 1993. ,
DOI : 10.1063/1.1677264
Thèse de doctorat, 2004. ,
Si/SiO2 superlattice based optical planar microcavity, Applied Physics B, vol.47, issue.2, p.237, 2007. ,
DOI : 10.1007/s00340-007-2684-9
Sol???gel fabrication of thick multilayers applied to Bragg reflectors and microcavities, Thin Solid Films, vol.416, issue.1-2, p.242, 2002. ,
DOI : 10.1016/S0040-6090(02)00722-8
URL : https://hal.archives-ouvertes.fr/hal-01597254
Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4???SiH4???H2, Thin Solid Films, vol.289, issue.1-2, p.227, 1996. ,
DOI : 10.1016/S0040-6090(96)08875-X
The Urbach focus and hydrogenated amorphous silicon, Applied Physics Letters, vol.84, issue.4, p.523, 2004. ,
DOI : 10.1080/13642818608238977
Structural and electrical properties of low temperature polycrystalline silicon deposited using SiF4???SiH4???H2, Thin Solid Films, vol.289, issue.1-2, p.227, 1996. ,
DOI : 10.1016/S0040-6090(96)08875-X
Absorption edge, band tails, and disorder of amorphous semiconductors, Physical Review B, vol.31, issue.7, p.3833, 1996. ,
DOI : 10.1103/PhysRevB.31.5187
Erbium emission from porous silicon one-dimensional photonic band gap structures, Applied Physics Letters, vol.77, issue.23, p.3704, 2000. ,
DOI : 10.1109/3.89951
Nanowire-array-based photonic crystal cavity by finite-difference time-domain calculations, Physical Review B, vol.8, issue.12, p.125104, 2007. ,
DOI : 10.1021/nl0487267
Probing the Spontaneous Emission Dynamics in Si-Nanocrystals-Based Microdisk Resonators, Physical Review Letters, vol.69, issue.10, p.103901, 2010. ,
DOI : 10.1364/OPEX.13.001202
Spontaneous-emission coupling factor and mode characteristics of planar dielectric microcavity lasers, Physical Review A, vol.58, issue.5, p.4451, 1993. ,
DOI : 10.1063/1.105218
Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy, Physical Review B, vol.81, issue.84, p.155311, 2004. ,
DOI : 10.1103/PhysRevLett.81.2803