The theory of rate processes, 1941. ,
Variation of peak temperature with heating rate in differential thermal analysis, Journal of Research of the National Bureau of Standards, vol.57, issue.4, p.217, 1956. ,
DOI : 10.6028/jres.057.026
An analysis of thermal desorption mass spectra. I., Applications of Surface Science, vol.1, issue.3, p.360, 1978. ,
DOI : 10.1016/0378-5963(78)90038-7
The mathematics of diffusion, 1956. ,
Thermal-equilibrium processes in amorphous silicon, Physical Review B, vol.53, issue.78, p.1316, 1987. ,
DOI : 10.1103/PhysRevLett.53.1602
Multiple beam interferometry ofsurfaces andfilms, 1948. ,
Vacuum de position ofthinfilms, p.45, 1961. ,
ECR ion and free radical sources for MBE applications, Review of Scientific Instruments, vol.61, issue.1, p.282, 1990. ,
DOI : 10.1063/1.1660786
Preparation of doped hydrogenated amorphous silicon films by microwave electron???cyclotron???resonance plasma discharge deposition, Journal of Applied Physics, vol.27, issue.5, p.2084, 1987. ,
DOI : 10.1063/1.92692
Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method, Journal of Applied Physics, vol.20, issue.6, p.2475, 1989. ,
DOI : 10.1143/JJAP.20.L117
by ECR Oxygen Plasma Assisted Reactive Evaporation, Japanese Journal of Applied Physics, vol.28, issue.Part 2, No. 4, p.635, 1989. ,
DOI : 10.1143/JJAP.28.L635
Study of the characteristics of the ion beam extracted from an rf discharge in hydrogen under conditions of resonance, Journal of Applied Physics, vol.33, issue.8, p.3385, 1974. ,
DOI : 10.1007/BF02750367
Tsai et P. Persans, Solid State Technol, p.55, 1978. ,
Quantitative analysis of hydrogen in glow discharge amorphous silicon, Applied Physics Letters, vol.31, issue.11, p.561, 1977. ,
DOI : 10.1063/1.30770
Kinetics of decomposition of amorphous hydrogenated silicon films, Journal of Applied Physics, vol.38, issue.8, p.5238, 1979. ,
DOI : 10.1080/13642817808245334
Hydrogen evolution from plasma???deposited amorphous silicon films, Journal of Vacuum Science and Technology, vol.15, issue.2, p.302, 1978. ,
DOI : 10.1116/1.569575
Hydrogen evolution and defect creation in amorphous Si: H alloys, Physical Review B, vol.15, issue.12, p.4839, 1979. ,
DOI : 10.1116/1.569575
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering, Physical Review B, vol.7, issue.8, p.3556, 1977. ,
DOI : 10.1103/PhysRevB.7.3685
Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon, Physical Review B, vol.37, issue.8, p.4288, 1978. ,
DOI : 10.1063/1.1733292
Kinetic analysis of hydrogen evolution from reactively sputtered amorphous silicon-hydrogen alloys, Physical Review B, vol.35, issue.36, p.6213, 1980. ,
DOI : 10.1063/1.91086
Hydrogen content and density of plasma???deposited amorphous silicon???hydrogen, Journal of Applied Physics, vol.48, issue.5, p.3366, 1979. ,
DOI : 10.1063/1.90153
ABFfit Manuel de la version 3.0 pour le Macintosh, Trieker et J. 1. B. Wilson, Phys. Stat. SoIidi (b) 10599]. P. Roea i Cabarroeas Michaels et M. H. Pilkuhn, Phys. Status Solidi Ennen, J. Schneider, G. Pornrenke et A. Axmann, Appt. Phys. LeU, pp.906-65, 1952. ,
luminescence in silicon, Journal of Applied Physics, vol.4, issue.5, pp.2672-2181, 1983. ,
DOI : 10.1016/0921-5107(89)90219-5
Gavrilenko in: Microcrystalline Semiconductors- Material Science and Deviees Symposium Solid State Commun, Mater. Res. Soc. Solid State Commun. Phys. Rev. B S. M. Prokes, J. Appl. Phys. A. Papaconstantopoulos et E. N. Economou, Phys. Rev. B J. Phys. (Paris) Appl. Phys. Lett. J. -N. Chazalviel, J. Phys. IV J. Phys. m (Paris) Appl. Phys. LeU. Appl. Phys. Lett, vol.455455585960, issue.2, pp.14171179-13788, 1981. ,
Solid State Commun The Chemical Physics of Surfaces, 78]. M. Vergnat, N. Hadj Zoubir et A. Bumeau Kovar et J. M. White, Appt. Phys. Lett100]. 1. Suemene, N. Noguchi et M. Yamanishi, Jpn. J. Appt. Phys. 31, pp.422-201, 0198. ,