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C2 et CH) reste approximativement constante à 1% de CH 4 et présente une légère décroissance à 0 ,
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:1', ;:;;:ergue les t-:;ilets de l'addition d'azote, en particullcr sa capacité à prOrnOllV(Ù' l:1 formation de .u~rrrünm:;::ürë et le dévçlcprement des faces (100), donnant lieu à des phénomènes de c]'()i c .:,i>!1CC bé t <:,'i)7(r;c :nis en '::·-·;.,len:'; ~";' il) Dans cert,jnes condit.ions, l'ajout d'azote induit alors tin optimum à vitesse 6: croi'.s')J ,
:', airni que l'apparition d'une morphologie globale (IOO}<1CC':'> ::'lOi'l\'c' . ..: "rUléS!.;;:';, de rugosik' Ces cond;: :·:b Li:'\iiIUÙ~'; !,iOI.llTont donc être mises à profit pour les applicâtiom, ·A ,
;r-f;èS, Dépôt chirrJ.ique en phase vapeur, P\:.lsma micf()-onde, Diagnostic JI1 situ, Pyrométlie intcrtëren ,
It concerned the optimisatio~l of an ()ïi;J.iil,:: development of in situ optical anat"ysis techniques 10' :'urfa(ë and plasma diagno~üc, and th'.'_ ~';.l',:i and rhe " ' . : r . : . diamon<i llucleation and growth in order to satisfy tL: prcpel1ies requïred for the diamond C,:orl: inl >.;L,!jl'~:. ":1;,.. :Ct, a'.:oustic ~,'ave (SAW) devices. Tbus, the diamond films ha'':':~ to be sufficiently thick and sml)';~:-."i":"'}"': !~aVl:' ::. ' .:r!: s~H'face electlÎcal resistance. 1'he reactor operating COf'ili:il'ioDS were then improved and surveill~;]Cè system was concei'led to secure the experillld1tal set-up dming deposition, liif: film/subsll'ate errüssi','ity variations during growth. This technique permits the estimation of several pi:YS".>i nul ,