U. Dans-la-limite-ou and . >>-g,-on-est-ramené-au-modèle-de-hubbard, g=0) qui devient le modèle t-J ` a demi-remplissage dans la limite bassé energie avec J de l'ordre de J ? 4t 2 /U . Celui-ci a ´ eté abondammentétudiéàabondammentétudiéabondammentétudiéà 1D ainsi què a 2D en topologie carrée et triangulaire. L'´ etat fondamental est unétatunétat de type isolant de Mott présentant un gap 2? ? U . Dans la limite g >> U , on est ramené au modèle de Holstein (U=0) En dimension D>1 et pour des fréquences des phonons habituelles, un ordre de type onde de densité de charge appara??tappara??t audeì a d'un certain couplagécouplagé electron-phonon critique g c tel que 2g

. Celle-ci-est-plutôt-du-type-displacive-avec-un-gap and . Petit, <100 meV) et impliquant de faibles distorsions de réseau (<0.1 ? A) (cf. Chapitre, Section 1.2) En couplage fort, les changements de phases structuraux sont souvent associésassociésà des transitions isolant-isolant présentant un caractère ordre-désordre prononcé. Les déplacements atomiques impliqués sont en général supérieurssupérieursà 0

. Dans-le-régime, -ph et les interactions e-e le modèle de Holstein-Hubbard peut-? etre mappé sur un modèle de Hubbard effectif dans lequel l'interaction e-e est renormalisée par le couplage e-ph V renorm = U ? 2g? o , E BP = 2g? o définissant l'´ energie de formation des bipolarons. Ainsi en couplage fort, il y a compétition entre l'interaction e-e et le couplage e-ph pour déterminer l'´ etat fondamental du système

>. U. Dans-le-cas-ou-2g?-o, interaction renormalisée devient attractive ce qui favorise la double occupation d'un site (négative U-centers) conduisantàconduisantà unétatunétat fondamental de type isolant-bipolaronique (BPI, figure 4.6) Ainsi l'´ energié elastique favorise localement l'appariement desélectronsdesélectrons. Le deux types de phases isolantes (BPI vs MI) sont connectées par une ligne de transition du premier ordre isolant-isolant correspondantàcorrespondantà U = 2g? o . En r` egle générale, la formation de bipolarons localisés est accompagnée d'une modulation

M. Onoda, H. Ohta, and H. Nagasawa, Metallic properties of perovskite oxide SrVO3, Solid State Communications, vol.79, issue.4, p.281, 1991.
DOI : 10.1016/0038-1098(91)90546-8

E. W. Plummer, J. Shi, S. J. Tang, E. Rotenberg, and S. D. Kevan, Enhanced electron???phonon coupling at metal surfaces, Progress in Surface Science, vol.74, issue.1-8, pp.251-268, 2003.
DOI : 10.1016/j.progsurf.2003.08.033

URL : https://digital.library.unt.edu/ark:/67531/metadc827762/m2/1/high_res_d/1073629.pdf

T. Aruga, Charge-density waves on metal surfaces, Journal of Physics: Condensed Matter, vol.14, issue.35, p.8393, 2002.
DOI : 10.1088/0953-8984/14/35/310

R. E. Schlier and H. E. Farnsworth, Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon, The Journal of Chemical Physics, vol.31, issue.4, p.917, 1959.
DOI : 10.1103/PhysRev.108.1131

K. Takayanagi, Y. Tanishiro, S. Takahashi, and M. Takahashi, Structure analysis of Si(111)-7 ?? 7 reconstructed surface by transmission electron diffraction, Surface Science, vol.164, issue.2-3, p.367, 1985.
DOI : 10.1016/0039-6028(85)90753-8

G. Binnnig, H. Rohrer, E. Gergber, and . Weibel, 7 ?? 7 Reconstruction on Si(111) Resolved in Real Space, Physical Review Letters, vol.27, issue.2, p.120, 1983.
DOI : 10.1016/0038-1098(78)90564-1

T. Hoshino, K. Kumamoto, T. Ishimaru, and I. Ohdomari, Evidence for the leading role of the stacking-fault triangle in the Si(111) 1??1???7??7 phase transition, Physical Review B, vol.20, issue.288, p.14594, 1995.
DOI : 10.1088/0022-3719/20/36/003

H. J. Gossmann, J. C. Bean, L. C. Feldman, E. G. Macrae, and I. K. Robinson, 7??7 Reconstruction of Ge(111) Surfaces under Compressive Strain, Physical Review Letters, vol.147, issue.10, p.1106, 1985.
DOI : 10.1016/0039-6028(84)90477-1

U. Köhler, O. Jusko, G. Pietsch, B. Müller, and M. Henzler, Strained-layer growth and islanding of germanium on Si(111)-(7 ?? 7) studied with STM, Surface Science, vol.248, issue.3, p.321, 1991.
DOI : 10.1016/0039-6028(91)91178-Z

T. Yokotsuka, S. Kono, S. Suzuki, and T. J. Sagawa, Study of Electronic Structures of Ge(111)7 ??7-Sn and Ge(111) ???2 ??8??? Surfaces by Angle-Resolved UPS, Journal of the Physical Society of Japan, vol.53, issue.2, p.696, 1984.
DOI : 10.1143/JPSJ.53.696

J. Aarts, A. J. Hoeven, and P. K. Larsen, (2??8) surface, Physical Review B, vol.17, issue.14, p.8190, 1988.
DOI : 10.1116/1.570492

K. C. Pandey, -Bonded Chains, Physical Review Letters, vol.47, issue.3, p.223, 1982.
DOI : 10.1103/PhysRevLett.47.1910

C. D. Chen, A. Selloni, and E. Et-tosatti, Electron-phonon coupling and surface-state polarons on Si(111)2??1, Physical Review B, vol.27, issue.12, p.7067, 1984.
DOI : 10.1103/PhysRevLett.27.253

J. N. Crain, K. N. Et-altmann, C. Et-bromberger, and F. Et-himpsel, Fermi surfaces of surface states on Si(111)-Ag, Au, Physical Review B, vol.78, issue.20, p.205302, 2002.
DOI : 10.1103/PhysRevLett.78.1331

T. Hashizume, M. Katayama, D. Jeon, M. Aono, and T. Sakurai, The Absolute Coverage of K on the Si(111)-3??1-K Surface, Japanese Journal of Applied Physics, vol.32, issue.Part 2, No. 9A, p.1263, 1993.
DOI : 10.1143/JJAP.32.L1263

H. H. Weitering, X. Shi, P. D. Et-johnson, J. Et-chen, N. J. Et-dinardo et al., Mott Insulating Ground State on a Triangular Surface Lattice, Physical Review Letters, vol.50, issue.309, p.1331, 1997.
DOI : 10.1103/PhysRevB.50.9589

H. H. Weitering, J. Et-chen, N. J. Et-dinardo, and E. W. Et-plummer, Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces, Physical Review B, vol.41, issue.212, p.8119, 1993.
DOI : 10.1103/PhysRevB.41.10283

H. M. Zhang and R. I. Uhrberg, : Surface band splitting and the inequivalent triangle model, Physical Review B, vol.307, issue.309, p.195329, 2006.
DOI : 10.1103/PhysRevB.70.245431

J. Schmeidel, H. Pfnür, and C. Tegenkamp, Coulomb blockade effects in Ag/Si(111): The role of the wetting layer, Physical Review B, vol.80, issue.11, p.115304, 2009.
DOI : 10.1103/PhysRevLett.99.146805

S. Pelletier, E. Et-ehret, B. Et-gautier, F. Et-palmino, J. C. Et-labrune et al., surfaces, Physical Review B, vol.25, issue.16, p.11645, 1999.
DOI : 10.1209/0295-5075/25/5/007

URL : https://hal.archives-ouvertes.fr/hal-00367827

F. Palmino, Etudes d'interfaces terre rare/semiconducteur et réalisation de croissances nanostructurées, 2003.

G. Chen, X. Ding, Z. Li, and X. Wang, Photoemission study of the initial stage of Er/Si(100) interface formation, Journal of Physics: Condensed Matter, vol.14, issue.43, p.10075, 2002.
DOI : 10.1088/0953-8984/14/43/306

G. Profeta, L. Ottaviano, S. Santucci, and E. A. Continenza, study, Physical Review B, vol.61, issue.8, p.81303, 2002.
DOI : 10.1103/PhysRevB.61.R13345

URL : https://hal.archives-ouvertes.fr/hal-00643518

F. Flores, J. Ortega, and R. Perez, MANY-BODY EFFECTS AND THE METAL???INSULATOR TRANSITION AT SEMICONDUCTOR SURFACES AND INTERFACES, Surface Review and Letters, vol.1, issue.03n04, p.411, 1999.
DOI : 10.1209/0295-5075/17/7/008

G. Santoro, S. Scandolo, and E. Tossati, Charge-density waves and surface Mott insulators for adlayer structures on semiconductors: Extended Hubbard modeling, Physical Review B, vol.31, issue.404, p.1891, 1999.
DOI : 10.1103/PhysRevB.31.2602

J. M. Carpinelli, Direct observation of a surface charge density wave, Nature, vol.381, issue.6581, p.398, 1996.
DOI : 10.1038/381398a0

R. Cortes, A. Tejeda, J. Lobo, C. Didiot, B. Kierren et al., at Low Temperature, Physical Review Letters, vol.96, issue.12, p.126103, 2006.
DOI : 10.1103/PhysRevLett.94.036105

S. Colonna, F. Ronci, A. Cricenti, and G. L. Lay, Surface down to 2.5??K, Physical Review Letters, vol.48, issue.18, p.186102, 2008.
DOI : 10.1016/j.apsusc.2006.06.061

URL : https://hal.archives-ouvertes.fr/hal-00386941

G. Profeta and E. Tossati, Surfaces, Physical Review Letters, vol.2, issue.8, p.86401, 2007.
DOI : 10.1103/PhysRevB.74.014408

Y. Ma, J. E. Rowe, E. E. Chaban, C. T. Chen, R. L. Headrick et al., (30??)-B system, Physical Review Letters, vol.41, issue.17, p.2173, 1990.
DOI : 10.1103/PhysRevB.41.7694

T. M. Grehkp, Occupied and unoccupied surface states on the Si(111)???3 ?? ???3 :B surface, Physical Review B, vol.41, issue.4, p.2357, 1992.
DOI : 10.1103/PhysRevB.41.1521

C. S. Hellberg and S. C. Erwin, Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator, Physical Review Letters, vol.52, issue.5, p.1003, 1999.
DOI : 10.1103/PhysRevB.52.6647

L. I. Johansson, F. Owman, and P. Matertensson, Surface state on the SiC(0001)-(???3 ?? ???3) surface, Surface Science, vol.360, issue.1-3, p.478, 1996.
DOI : 10.1016/0039-6028(96)00701-7

F. Amy, P. Soukiassian, and C. Brylinski, Atomic cracks and (23??2??3)-R30?? reconstruction at 6H-SiC(0001) surface, Applied Physics Letters, vol.85, issue.6, p.926, 2004.
DOI : 10.1103/PhysRevLett.81.5868

C. J. Manuel, A. E. Gazza, A. E. Feiguin, and . Trumper, The spectral function for Mott insulating surfaces, Journal of Physics: Condensed Matter, vol.15, issue.17, p.2435, 2003.
DOI : 10.1088/0953-8984/15/17/301

A. E. Trumper, C. Gazza, and L. O. Manuel, Quasiparticle vanishing driven by geometrical frustration, Physical Review B, vol.53, issue.18, p.184407, 2004.
DOI : 10.1103/PhysRevB.53.402

URL : http://arxiv.org/pdf/cond-mat/0306147

P. Auger, Sur l'effet photo??lectrique compos??, Journal de Physique et le Radium, vol.6, issue.6, p.205, 1925.
DOI : 10.1051/jphysrad:0192500606020500

G. Binnig, H. Rohrer, C. Gerber, and E. , Tunneling through a controllable vacuum gap, Applied Physics Letters, vol.22, issue.2, p.178, 1982.
DOI : 10.1063/1.1134513

G. Binnig, H. Rohrer, C. Gerber, and E. , 7 ?? 7 Reconstruction on Si(111) Resolved in Real Space, Physical Review Letters, vol.27, issue.2, p.120, 1983.
DOI : 10.1016/0038-1098(78)90564-1

M. Berthe, A. Urbieta, L. Perdigao, B. Grandidier, D. Deresmes et al., Electron Transport via Local Polarons at Interface Atoms, Physical Review Letters, vol.97, issue.20, p.206801, 2006.
DOI : 10.1063/1.346745

URL : https://hal.archives-ouvertes.fr/hal-00127839

S. Hüfner, Photoelectron Spectroscopy, Principles and applications, 1995.

L. Ley and M. Cardona, Photoemission in solids I, 1978.
DOI : 10.1007/3-540-09202-1

C. N. Berglund and W. E. Spicer, Photoemission Studies of Copper and Silver: Theory, Physical Review, vol.81, issue.4A, p.1030, 1964.
DOI : 10.1103/PhysRev.81.612

H. Q. Shi, M. W. Radny, and . Smith, chemisorption system, Physical Review B, vol.41, issue.9, p.235325, 2004.
DOI : 10.1103/PhysRevB.40.3905

H. Fehske, Quantum lattice dynamical effects on single-particle excitations in one-dimensional Mott and Peierls insulators, Physical Review B, vol.85, issue.313, p.165115, 2004.
DOI : 10.1103/PhysRevLett.85.3910

G. D. Mahan, Many-Particles Physics, 1981.

P. J. Rous and J. Pendry, His Contributions to the Development of LEED Surface Crystallography, 2008.

E. Cho and . Kaxiras, Diffusion of adsorbate atoms on the reconstructed Si(111) surface, Surface Science, vol.396, issue.1-3, p.261, 1998.
DOI : 10.1016/S0039-6028(97)00848-0

L. D. Villars and . Calvert, Pearson's Handbook of Crystallographic Data for Intermetallic Phases, 1985.

C. Törnevik, M. Et-hammar, N. G. Et-nilsson, and S. A. Et-flodström, 30?? reconstructed surface, Physical Review B, vol.40, issue.23, p.13144, 1991.
DOI : 10.1103/PhysRevB.40.3905

A. Tejeda, . Cortes, E. Lobo, . Michel, and . Mascaraque, The Fermi surface of Sn/Ge(111) and Pb/Ge(111), Journal of Physics: Condensed Matter, vol.19, issue.35, p.355008, 2007.
DOI : 10.1088/0953-8984/19/35/355008

URL : https://hal.archives-ouvertes.fr/hal-00186492

F. Ronci, S. Colonna, S. D. Thorpe, and A. Cricenti, Surface, Physical Review Letters, vol.271, issue.15, p.156101, 2005.
DOI : 10.1103/PhysRevB.61.2235

URL : https://hal.archives-ouvertes.fr/hal-00975162

E. Berger, P. Valasek, and W. Von-der-linden, Two-dimensional Hubbard-Holstein model, Physical Review B, vol.63, issue.7, p.4806, 1995.
DOI : 10.1103/PhysRevLett.63.1523

G. S. Jeon, Dynamical mean-field theory of the Hubbard-Holstein model at half filling:???Zero temperature metal-insulator and insulator-insulator transitions, Physical Review B, vol.70, issue.12, p.125114, 2004.
DOI : 10.1103/PhysRevLett.73.1525

G. Sangiovanni, Electron-Phonon Interaction Close to a Mott Transition, Physical Review Letters, vol.2, issue.2, p.26401, 2005.
DOI : 10.1103/PhysRevB.69.161101

S. Lakkis, single crystals: Crystal characterization, specific heat, and electron paramagnetic resonance, Physical Review B, vol.19, issue.4, p.1429, 1976.
DOI : 10.1080/00018736900101267

B. K. Chakraverty, M. J. Et-sienko, and . Bonnerot, Low-temperature specific heat and magnetic susceptibility of nonmetallic vanadium bronzes, Physical Review B, vol.22, issue.10, p.3781, 1978.
DOI : 10.1007/BF01325454

D. Schrupp, M. Sing, M. Tsunekawa, H. Fujiwara, S. Kasai et al., : Small polaron physics and the Verwey transition, Europhysics Letters (EPL), vol.70, issue.6, p.789, 2005.
DOI : 10.1209/epl/i2005-10045-y

P. W. Anderson, Model for the Electronic Structure of Amorphous Semiconductors, Physical Review Letters, vol.25, issue.15, p.953, 1975.
DOI : 10.1088/0031-9112/25/10/025

U. Gobel, A. S. Alexandrov, and E. H. Capellmann, Electron phonon systems from weak to strong coupling, Zeitschrift f???r Physik B Condensed Matter, vol.27, issue.1, p.47, 1994.
DOI : 10.1007/BF01313014

R. A. Bari, Small-polaron effects on the dc conductivity and thermoelectric power of the one-dimensional Mott semiconductor, Physical Review B, vol.31, issue.10, p.4329, 1974.
DOI : 10.1103/PhysRevLett.31.601

K. M. Shen, F. Et-ronning, D. H. Lu, W. S. Et-lee, N. J. Et-ingle et al., Missing Quasiparticles and the Chemical Potential Puzzle in the Doping Evolution of the Cuprate Superconductors, Physical Review Letters, vol.423, issue.26, p.267002, 2004.
DOI : 10.1103/PhysRevLett.91.027001

O. Rösch, O. Et-gunnarsson, X. J. Et-zhou, T. Et-yoshida, T. Et-sasagawa et al., Cuprate Superconductors from Angle-Resolved Photoemission Spectra, Physical Review Letters, vol.95, issue.22, p.227002, 2005.
DOI : 10.1103/PhysRevB.30.3141

G. H. Gweon, An unusual isotope effect in a high-transition-temperature superconductor, Nature, vol.60, issue.6996, pp.187-190, 2004.
DOI : 10.1103/PhysRevLett.60.2089

M. Hoinkis, Phase transitions in low-dimensional transition metal compounds, Germany, 2006.

J. Kim, M. Et-yeh, . Khan, S. Furrukh, and J. W. Et-wilkins, Surface phonons of the Si(111)-7??7 reconstructed surface, Physical Review B, vol.57, issue.20, p.14709, 1995.
DOI : 10.1103/PhysRevLett.57.2947

M. Berthe, R. Stiufiuc, B. Grandidier, D. Deresmes, C. Delerue et al., Probing the Carrier Capture Rate of a Single Quantum Level, Science, vol.63, issue.3, p.436, 2008.
DOI : 10.1063/1.346745

URL : https://hal.archives-ouvertes.fr/hal-00357378

H. Ashima, K. Sakamoto, H. Takeda, and W. Uchida, Vibrational modes of the K/Si()-(3??1) surface studied by high-resolution electron energy loss spectroscopy, Surface Science, vol.514, issue.1-3, p.332, 2002.
DOI : 10.1016/S0039-6028(02)01649-7

L. A. Cardenas, Y. Fagot-revurat, L. Moreau, B. Kierren, and D. Malterre, Mott Insulator, Physical Review Letters, vol.6, issue.4, p.46804, 2009.
DOI : 10.1103/PhysRevLett.71.2797

O. Pankratov and M. Scheffler, behavior of GaAs(110) with adsorbed alkali metals, Physical Review Letters, vol.13, issue.17, p.2797, 1993.
DOI : 10.1007/978-3-642-86105-5

A. Alexandrov and . Et-ranninger, Theory of bipolarons and bipolaronic bands, Physical Review B, vol.30, issue.4, p.1796, 1981.
DOI : 10.1103/PhysRev.94.262

A. S. Alexandrov, Polaron dynamics and bipolaron condensation in cuprates, Physical Review B, vol.60, issue.18, p.12315, 2000.
DOI : 10.1103/PhysRevB.42.7989

J. P. Hague, Superlight Small Bipolarons in the Presence of a Strong Coulomb Repulsion, Physical Review Letters, vol.98, issue.3, p.37002, 2007.
DOI : 10.1103/PhysRevLett.94.147003

G. Allan and M. Et-lannoo, character of the adsorption on semiconductor surfaces: Application to metals on GaAs(110), Physical Review Letters, vol.44, issue.9, p.1209, 1991.
DOI : 10.1051/jphys:0198300440120135500

M. Abbate, R. Et-potze, G. A. Et-sawatzky, C. Et-schlenker, H. J. Et-lin et al., across the semiconductor???semiconductor-metal transitions, Physical Review B, vol.46, issue.15, p.10150, 1995.
DOI : 10.1103/PhysRevB.46.4511