g=0) qui devient le modèle t-J ` a demi-remplissage dans la limite bassé energie avec J de l'ordre de J ? 4t 2 /U . Celui-ci a ´ eté abondammentétudiéàabondammentétudiéabondammentétudiéà 1D ainsi què a 2D en topologie carrée et triangulaire. L'´ etat fondamental est unétatunétat de type isolant de Mott présentant un gap 2? ? U . Dans la limite g >> U , on est ramené au modèle de Holstein (U=0) En dimension D>1 et pour des fréquences des phonons habituelles, un ordre de type onde de densité de charge appara??tappara??t audeì a d'un certain couplagécouplagé electron-phonon critique g c tel que 2g ,
<100 meV) et impliquant de faibles distorsions de réseau (<0.1 ? A) (cf. Chapitre, Section 1.2) En couplage fort, les changements de phases structuraux sont souvent associésassociésà des transitions isolant-isolant présentant un caractère ordre-désordre prononcé. Les déplacements atomiques impliqués sont en général supérieurssupérieursà 0 ,
-ph et les interactions e-e le modèle de Holstein-Hubbard peut-? etre mappé sur un modèle de Hubbard effectif dans lequel l'interaction e-e est renormalisée par le couplage e-ph V renorm = U ? 2g? o , E BP = 2g? o définissant l'´ energie de formation des bipolarons. Ainsi en couplage fort, il y a compétition entre l'interaction e-e et le couplage e-ph pour déterminer l'´ etat fondamental du système ,
interaction renormalisée devient attractive ce qui favorise la double occupation d'un site (négative U-centers) conduisantàconduisantà unétatunétat fondamental de type isolant-bipolaronique (BPI, figure 4.6) Ainsi l'´ energié elastique favorise localement l'appariement desélectronsdesélectrons. Le deux types de phases isolantes (BPI vs MI) sont connectées par une ligne de transition du premier ordre isolant-isolant correspondantàcorrespondantà U = 2g? o . En r` egle générale, la formation de bipolarons localisés est accompagnée d'une modulation ,
Metallic properties of perovskite oxide SrVO3, Solid State Communications, vol.79, issue.4, p.281, 1991. ,
DOI : 10.1016/0038-1098(91)90546-8
Enhanced electron???phonon coupling at metal surfaces, Progress in Surface Science, vol.74, issue.1-8, pp.251-268, 2003. ,
DOI : 10.1016/j.progsurf.2003.08.033
URL : https://digital.library.unt.edu/ark:/67531/metadc827762/m2/1/high_res_d/1073629.pdf
Charge-density waves on metal surfaces, Journal of Physics: Condensed Matter, vol.14, issue.35, p.8393, 2002. ,
DOI : 10.1088/0953-8984/14/35/310
Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon, The Journal of Chemical Physics, vol.31, issue.4, p.917, 1959. ,
DOI : 10.1103/PhysRev.108.1131
Structure analysis of Si(111)-7 ?? 7 reconstructed surface by transmission electron diffraction, Surface Science, vol.164, issue.2-3, p.367, 1985. ,
DOI : 10.1016/0039-6028(85)90753-8
7 ?? 7 Reconstruction on Si(111) Resolved in Real Space, Physical Review Letters, vol.27, issue.2, p.120, 1983. ,
DOI : 10.1016/0038-1098(78)90564-1
Evidence for the leading role of the stacking-fault triangle in the Si(111) 1??1???7??7 phase transition, Physical Review B, vol.20, issue.288, p.14594, 1995. ,
DOI : 10.1088/0022-3719/20/36/003
7??7 Reconstruction of Ge(111) Surfaces under Compressive Strain, Physical Review Letters, vol.147, issue.10, p.1106, 1985. ,
DOI : 10.1016/0039-6028(84)90477-1
Strained-layer growth and islanding of germanium on Si(111)-(7 ?? 7) studied with STM, Surface Science, vol.248, issue.3, p.321, 1991. ,
DOI : 10.1016/0039-6028(91)91178-Z
Study of Electronic Structures of Ge(111)7 ??7-Sn and Ge(111) ???2 ??8??? Surfaces by Angle-Resolved UPS, Journal of the Physical Society of Japan, vol.53, issue.2, p.696, 1984. ,
DOI : 10.1143/JPSJ.53.696
(2??8) surface, Physical Review B, vol.17, issue.14, p.8190, 1988. ,
DOI : 10.1116/1.570492
-Bonded Chains, Physical Review Letters, vol.47, issue.3, p.223, 1982. ,
DOI : 10.1103/PhysRevLett.47.1910
Electron-phonon coupling and surface-state polarons on Si(111)2??1, Physical Review B, vol.27, issue.12, p.7067, 1984. ,
DOI : 10.1103/PhysRevLett.27.253
Fermi surfaces of surface states on Si(111)-Ag, Au, Physical Review B, vol.78, issue.20, p.205302, 2002. ,
DOI : 10.1103/PhysRevLett.78.1331
The Absolute Coverage of K on the Si(111)-3??1-K Surface, Japanese Journal of Applied Physics, vol.32, issue.Part 2, No. 9A, p.1263, 1993. ,
DOI : 10.1143/JJAP.32.L1263
Mott Insulating Ground State on a Triangular Surface Lattice, Physical Review Letters, vol.50, issue.309, p.1331, 1997. ,
DOI : 10.1103/PhysRevB.50.9589
Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces, Physical Review B, vol.41, issue.212, p.8119, 1993. ,
DOI : 10.1103/PhysRevB.41.10283
: Surface band splitting and the inequivalent triangle model, Physical Review B, vol.307, issue.309, p.195329, 2006. ,
DOI : 10.1103/PhysRevB.70.245431
Coulomb blockade effects in Ag/Si(111): The role of the wetting layer, Physical Review B, vol.80, issue.11, p.115304, 2009. ,
DOI : 10.1103/PhysRevLett.99.146805
surfaces, Physical Review B, vol.25, issue.16, p.11645, 1999. ,
DOI : 10.1209/0295-5075/25/5/007
URL : https://hal.archives-ouvertes.fr/hal-00367827
Etudes d'interfaces terre rare/semiconducteur et réalisation de croissances nanostructurées, 2003. ,
Photoemission study of the initial stage of Er/Si(100) interface formation, Journal of Physics: Condensed Matter, vol.14, issue.43, p.10075, 2002. ,
DOI : 10.1088/0953-8984/14/43/306
study, Physical Review B, vol.61, issue.8, p.81303, 2002. ,
DOI : 10.1103/PhysRevB.61.R13345
URL : https://hal.archives-ouvertes.fr/hal-00643518
MANY-BODY EFFECTS AND THE METAL???INSULATOR TRANSITION AT SEMICONDUCTOR SURFACES AND INTERFACES, Surface Review and Letters, vol.1, issue.03n04, p.411, 1999. ,
DOI : 10.1209/0295-5075/17/7/008
Charge-density waves and surface Mott insulators for adlayer structures on semiconductors: Extended Hubbard modeling, Physical Review B, vol.31, issue.404, p.1891, 1999. ,
DOI : 10.1103/PhysRevB.31.2602
Direct observation of a surface charge density wave, Nature, vol.381, issue.6581, p.398, 1996. ,
DOI : 10.1038/381398a0
at Low Temperature, Physical Review Letters, vol.96, issue.12, p.126103, 2006. ,
DOI : 10.1103/PhysRevLett.94.036105
Surface down to 2.5??K, Physical Review Letters, vol.48, issue.18, p.186102, 2008. ,
DOI : 10.1016/j.apsusc.2006.06.061
URL : https://hal.archives-ouvertes.fr/hal-00386941
Surfaces, Physical Review Letters, vol.2, issue.8, p.86401, 2007. ,
DOI : 10.1103/PhysRevB.74.014408
(30??)-B system, Physical Review Letters, vol.41, issue.17, p.2173, 1990. ,
DOI : 10.1103/PhysRevB.41.7694
Occupied and unoccupied surface states on the Si(111)???3 ?? ???3 :B surface, Physical Review B, vol.41, issue.4, p.2357, 1992. ,
DOI : 10.1103/PhysRevB.41.1521
Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator, Physical Review Letters, vol.52, issue.5, p.1003, 1999. ,
DOI : 10.1103/PhysRevB.52.6647
Surface state on the SiC(0001)-(???3 ?? ???3) surface, Surface Science, vol.360, issue.1-3, p.478, 1996. ,
DOI : 10.1016/0039-6028(96)00701-7
Atomic cracks and (23??2??3)-R30?? reconstruction at 6H-SiC(0001) surface, Applied Physics Letters, vol.85, issue.6, p.926, 2004. ,
DOI : 10.1103/PhysRevLett.81.5868
The spectral function for Mott insulating surfaces, Journal of Physics: Condensed Matter, vol.15, issue.17, p.2435, 2003. ,
DOI : 10.1088/0953-8984/15/17/301
Quasiparticle vanishing driven by geometrical frustration, Physical Review B, vol.53, issue.18, p.184407, 2004. ,
DOI : 10.1103/PhysRevB.53.402
URL : http://arxiv.org/pdf/cond-mat/0306147
Sur l'effet photo??lectrique compos??, Journal de Physique et le Radium, vol.6, issue.6, p.205, 1925. ,
DOI : 10.1051/jphysrad:0192500606020500
Tunneling through a controllable vacuum gap, Applied Physics Letters, vol.22, issue.2, p.178, 1982. ,
DOI : 10.1063/1.1134513
7 ?? 7 Reconstruction on Si(111) Resolved in Real Space, Physical Review Letters, vol.27, issue.2, p.120, 1983. ,
DOI : 10.1016/0038-1098(78)90564-1
Electron Transport via Local Polarons at Interface Atoms, Physical Review Letters, vol.97, issue.20, p.206801, 2006. ,
DOI : 10.1063/1.346745
URL : https://hal.archives-ouvertes.fr/hal-00127839
Photoelectron Spectroscopy, Principles and applications, 1995. ,
Photoemission in solids I, 1978. ,
DOI : 10.1007/3-540-09202-1
Photoemission Studies of Copper and Silver: Theory, Physical Review, vol.81, issue.4A, p.1030, 1964. ,
DOI : 10.1103/PhysRev.81.612
chemisorption system, Physical Review B, vol.41, issue.9, p.235325, 2004. ,
DOI : 10.1103/PhysRevB.40.3905
Quantum lattice dynamical effects on single-particle excitations in one-dimensional Mott and Peierls insulators, Physical Review B, vol.85, issue.313, p.165115, 2004. ,
DOI : 10.1103/PhysRevLett.85.3910
Many-Particles Physics, 1981. ,
His Contributions to the Development of LEED Surface Crystallography, 2008. ,
Diffusion of adsorbate atoms on the reconstructed Si(111) surface, Surface Science, vol.396, issue.1-3, p.261, 1998. ,
DOI : 10.1016/S0039-6028(97)00848-0
Pearson's Handbook of Crystallographic Data for Intermetallic Phases, 1985. ,
30?? reconstructed surface, Physical Review B, vol.40, issue.23, p.13144, 1991. ,
DOI : 10.1103/PhysRevB.40.3905
The Fermi surface of Sn/Ge(111) and Pb/Ge(111), Journal of Physics: Condensed Matter, vol.19, issue.35, p.355008, 2007. ,
DOI : 10.1088/0953-8984/19/35/355008
URL : https://hal.archives-ouvertes.fr/hal-00186492
Surface, Physical Review Letters, vol.271, issue.15, p.156101, 2005. ,
DOI : 10.1103/PhysRevB.61.2235
URL : https://hal.archives-ouvertes.fr/hal-00975162
Two-dimensional Hubbard-Holstein model, Physical Review B, vol.63, issue.7, p.4806, 1995. ,
DOI : 10.1103/PhysRevLett.63.1523
Dynamical mean-field theory of the Hubbard-Holstein model at half filling:???Zero temperature metal-insulator and insulator-insulator transitions, Physical Review B, vol.70, issue.12, p.125114, 2004. ,
DOI : 10.1103/PhysRevLett.73.1525
Electron-Phonon Interaction Close to a Mott Transition, Physical Review Letters, vol.2, issue.2, p.26401, 2005. ,
DOI : 10.1103/PhysRevB.69.161101
single crystals: Crystal characterization, specific heat, and electron paramagnetic resonance, Physical Review B, vol.19, issue.4, p.1429, 1976. ,
DOI : 10.1080/00018736900101267
Low-temperature specific heat and magnetic susceptibility of nonmetallic vanadium bronzes, Physical Review B, vol.22, issue.10, p.3781, 1978. ,
DOI : 10.1007/BF01325454
: Small polaron physics and the Verwey transition, Europhysics Letters (EPL), vol.70, issue.6, p.789, 2005. ,
DOI : 10.1209/epl/i2005-10045-y
Model for the Electronic Structure of Amorphous Semiconductors, Physical Review Letters, vol.25, issue.15, p.953, 1975. ,
DOI : 10.1088/0031-9112/25/10/025
Electron phonon systems from weak to strong coupling, Zeitschrift f???r Physik B Condensed Matter, vol.27, issue.1, p.47, 1994. ,
DOI : 10.1007/BF01313014
Small-polaron effects on the dc conductivity and thermoelectric power of the one-dimensional Mott semiconductor, Physical Review B, vol.31, issue.10, p.4329, 1974. ,
DOI : 10.1103/PhysRevLett.31.601
Missing Quasiparticles and the Chemical Potential Puzzle in the Doping Evolution of the Cuprate Superconductors, Physical Review Letters, vol.423, issue.26, p.267002, 2004. ,
DOI : 10.1103/PhysRevLett.91.027001
Cuprate Superconductors from Angle-Resolved Photoemission Spectra, Physical Review Letters, vol.95, issue.22, p.227002, 2005. ,
DOI : 10.1103/PhysRevB.30.3141
An unusual isotope effect in a high-transition-temperature superconductor, Nature, vol.60, issue.6996, pp.187-190, 2004. ,
DOI : 10.1103/PhysRevLett.60.2089
Phase transitions in low-dimensional transition metal compounds, Germany, 2006. ,
Surface phonons of the Si(111)-7??7 reconstructed surface, Physical Review B, vol.57, issue.20, p.14709, 1995. ,
DOI : 10.1103/PhysRevLett.57.2947
Probing the Carrier Capture Rate of a Single Quantum Level, Science, vol.63, issue.3, p.436, 2008. ,
DOI : 10.1063/1.346745
URL : https://hal.archives-ouvertes.fr/hal-00357378
Vibrational modes of the K/Si()-(3??1) surface studied by high-resolution electron energy loss spectroscopy, Surface Science, vol.514, issue.1-3, p.332, 2002. ,
DOI : 10.1016/S0039-6028(02)01649-7
Mott Insulator, Physical Review Letters, vol.6, issue.4, p.46804, 2009. ,
DOI : 10.1103/PhysRevLett.71.2797
behavior of GaAs(110) with adsorbed alkali metals, Physical Review Letters, vol.13, issue.17, p.2797, 1993. ,
DOI : 10.1007/978-3-642-86105-5
Theory of bipolarons and bipolaronic bands, Physical Review B, vol.30, issue.4, p.1796, 1981. ,
DOI : 10.1103/PhysRev.94.262
Polaron dynamics and bipolaron condensation in cuprates, Physical Review B, vol.60, issue.18, p.12315, 2000. ,
DOI : 10.1103/PhysRevB.42.7989
Superlight Small Bipolarons in the Presence of a Strong Coulomb Repulsion, Physical Review Letters, vol.98, issue.3, p.37002, 2007. ,
DOI : 10.1103/PhysRevLett.94.147003
character of the adsorption on semiconductor surfaces: Application to metals on GaAs(110), Physical Review Letters, vol.44, issue.9, p.1209, 1991. ,
DOI : 10.1051/jphys:0198300440120135500
across the semiconductor???semiconductor-metal transitions, Physical Review B, vol.46, issue.15, p.10150, 1995. ,
DOI : 10.1103/PhysRevB.46.4511