M. Walters, A. Reisman, and J. , The Effects of Various Gate Oxidation Conditions on Intrinsic and Radiation-Induced Extrinsic Charged Defects and Neutral Electron Traps, Journal of The Electrochemical Society, vol.137, issue.11, p.3596, 1990.
DOI : 10.1149/1.2086274

). K. Awazu, H. Kawzoe, T. Ando, and E. K. Watanabe, interface, Journal of Applied Physics, vol.34, issue.6, p.2979, 1991.
DOI : 10.1557/PROC-92-89

). S. Lai, Two???carrier nature of interface???state generation in hole trapping and radiation damage, Applied Physics Letters, vol.40, issue.1, p.58, 1981.
DOI : 10.1063/1.326714

J. Nissan-cohen, D. Shappir, and . Frohman-bentchkowsky, Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions, Solid-State Electronics, vol.28, issue.7, p.717, 1983.
DOI : 10.1016/0038-1101(85)90022-X

1. F. Zhang, S. Taylor, and W. Eccleston, under Fowler???Nordheim stress, Journal of Applied Physics, vol.20, issue.12, p.5989, 1992.
DOI : 10.1103/PhysRevB.31.2099

A. Schwerin and M. M. Heyns, layers using homogeneous nonavalanche injection of holes, Journal of Applied Physics, vol.35, issue.12, p.7595, 1990.
DOI : 10.1557/PROC-105-205

J. Gerardi, E. H. Poindexter, P. C. Caplan, and N. M. Johnson, centers in oxidized (100)???silicon wafers, Applied Physics Letters, vol.37, issue.6, p.348, 1986.
DOI : 10.1016/0038-1098(81)91214-X