Bombardement ionique O, F, Br et l en SIMS : génération par duoplasmatron et étude du potentiel analytique

Abstract : Secondary Ion Mass spectrometry (SIMS) is a powerful surface analysis technique. The ionisation probability strongly depends on the chemical surface state. The generation of positive secondary ions can be enhanced by surface bombardment with electronegative elements.Due to the optical configuration of the CAMECA NanoSIMS 50, that necessitates an opposite polarity of incoming and ejected ions, analyses of positive ions are realized with primary O- ions, generated in a duoplasmatron ion source. As a consequence of the low O- brightness of the duoplasmatron source, the lateral resolution of the analyses on the NanoSIMS 50 is not satisfactory in the positive secondary mode. In this work, we studied the feasibility of different alternative negative primary ion beams. We investigated the possibility of F-, Cl-, Br- and I- ion generation with a duoplasmatron as a function of the source parameters, notably the magnetic field strength, the arc current and the total gas pressure. The ion current and the beam diameter were measured in order to determine the F-, Cl-, Br- and I- brightness of the source. A comparative study with the O- brightness demonstrates an increase of the F- brightness by a factor of 5.By using the F-, Cl-, Br- and I- bombardment, the sputtering yield, the concentration of implanted primary ions and the useful yield of different semi-conductor and metal samples were analysed. As a consequence of a low halogen concentration, related to etching effects, no enhancement of the useful yield could be noticed for the semi-conductors. For metals however (e.g. Ni, Cu and Ag), useful yield enhancements by up to a factor of 100 compared to the O- bombardment could be demonstrated
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Lex Pillatsch. Bombardement ionique O, F, Br et l en SIMS : génération par duoplasmatron et étude du potentiel analytique. Autre. Institut National Polytechnique de Lorraine, 2010. Français. ⟨NNT : 2010INPL052N⟩. ⟨tel-01748836⟩

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