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13 illustre la comparaison entre les nc-ZnS et nc-ZnS : Mn. Nous constatons que l'intensité de la photoluminescence est intense pour les nc-ZnS : Mn, probablement dû au dopage au Mn, Cela confirme que le pic à 570 nm est spécifique aux ions Mn 2+ et non à ZnS. FIG. 4.20 ? Mesures ellipsométriques des échantillons ZnS 900 et ZnS 1000 ,
Cela nous a conduits à penser aux défauts étudiés dans le quatrième chapitre tels que les défauts de la matrice En effet, nous savons que l'implantation multiple peut produire une augmentation de la densité de défauts radiatifs dans la silice. Cette augmentation est souvent caractérisée par un pic d'absorption assez large centré autour de 2.7 eV lié aux lacunes d'oxygène et la signature des centres non radiatifs E' autour de 5.8 eV, Nous n'avons pas observé pas des discordances autour de 2.7 eV mais à partir 5 eV. C'est pourquoi nous avons tenu compte des FIG. 4.23 ? Comparaison entre les spectres ellipsométriques (Is, Ic) mesurés et calculés des échantillons ZnS 900 et ZnS 1000 à 70° ,
elle est réduite par rapport à ZnS massif. La fonction diélectrique est directement proportionnelle à la densité d'états. La densité d'état des nanoparticules est plus faible que celle du matériau massif. Cela est dû au nombre réduit d'états électroniques disponibles en raison de la diminution de la petite taille. Il est prévu que la valeur de ? i dans le cas des nanoparticules sera moindre en comparaison du matériau massif [30]. En outre, les effets de polarisation de surface due aux charges induites à l'interface nanoparticule/matrice permettent également de réduire ces valeurs [31, Le modèle modifié de FIG. 4. 31 ? Comparaison des spectres ellipsométriques mesurés à l'angle d'incidence ? = 70°, de l'échantillon de référence (non implanté) et des trois échantillons dopés ZnS : Mn30 mn ,
36 sont représentés les spectres du coefficient d'absorption pour les nanocristaux de ZnS : Mn. FIG. 4.36 ? Spectres du coefficient d'absorption pour les particules de ZnS ,
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