O. Berry, Y. Hamieh, S. Raël, F. Meibody-tabar, S. Vieillard et al., Morel, « Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor, In Materials Science Forum, pp.645-648, 2010.

O. Berry, Y. Hamieh, S. Raël, F. Meibody-tabar, S. Vieillard et al., Morel, « Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor, ICSCRM International conference on Silicon Carbide and Related Materials, 2009.

S. Meibody-tabar, R. Raël, S. Meuret, and . Dhokkar, « Normally-On SiC JFETs in Power Converters: Gate Driver and Safe Operation, CIPS International Conference on Integrated Power Electronics Systems, VDE VERLAG GMBH, p.6, 2010.

«. Meuret, Modélisation multiphysique d'un canal de JFET asymétrique, applications aux JFET SiC (INFINEON), EPF 2010 Electronique de Puissance du Futur, p.6, 2010.

C. Miesner, R. Rupp, H. Kapels, M. Krach, and I. Zverev, « thinQ! TM Silicon Carbide Schottky Diodes: An SMPS Circuit Designer's Dream Comes True!, 2010.

. Site-du-fabricant-tektronix, fichier d'information destiné aux utilisateurs de sonde de mesure, nom du fichier : abcs_of_probes_tektronix.pdf, 2010.

H. Agarwal, S. Fatima, S. H. Haney, and . Ryu, A New Degradation Mechanism in High-Voltage SiC Power MOSFETs, IEEE ELECTRON DEVICE LETTERS, pp.7-587, 2007.
DOI : 10.1109/LED.2007.897861

]. P. Alexandrov, J. H. Zhao, W. Wright, M. Pan, and M. Weiner, Demonstration of 140A, 800V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures, IET Electronics Letters, pp.18-1139, 2001.

]. J. Arnould and P. Merle, « Dispositifs de l'électronique de puissance, pp.482-484, 1992.

]. B. Baliga, B. Tech, and . High, High-voltage device termination techniques a comparative review, Power Transistors : Device Design and Applications, pp.376-382, 1984.
DOI : 10.1049/ip-i-1.1982.0037

]. B. Baliga, The pinch rectifier: A low-forward-drop high-speed power diode, IEEE ELECTRON DEVICE LETTERS, pp.6-194, 1984.
DOI : 10.1109/EDL.1984.25884

S. Balachandran, C. Li, P. A. Losee, I. B. Bhat, and T. P. Chow, 6kV 4H-SiC BJTs with Specific On-resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, pp.293-296, 2007.
DOI : 10.1109/ISPSD.2007.4294990

M. Berkani, S. Lefebvre, N. Boughrara, Z. Khatir, J. C. Faugières et al., Haddouche « Estimation of SiC JFET temperature during shortcircuit operations, Microelectronics Reliability, pp.1358-1362, 2009.

S. Hamieh, F. Raël, S. Meibody-tabar, D. Vieillard, and H. Bergogne, Morel, « Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor, ICSCRM International conference on Silicon Carbide and Related Materials, 2009.

S. Hamieh, F. Raël, S. Meibody-tabar, D. Vieillard, and H. Bergogne, « Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor, In Materials Science Forum, pp.645-648, 2010.

F. Björk, J. Hancock, M. Treu, R. Rupp, and T. Reimann, « 2 nd Generation 600V SiC Schottky diodes Use Merged pn/Schottky Structure for Surge Overload Protection, APEC'06 Applied Power Electronics Conference and Exposition, pp.170-173, 2006.

R. Burgos, Z. Chen, D. Boroyevich, and F. Wang, Design considerations of a fast 0-Ω gate-drive circuit for 1.2 kV SiC JFET devices in phase-leg configuration, 2009 IEEE Energy Conversion Congress and Exposition, pp.2293-2300, 2009.
DOI : 10.1109/ECCE.2009.5316075

]. J. Camassel, S. Contreras, and J. L. Robert, «Matériaux semi-conducteur à grand gap : SIC », Techniques de l'ingénieur, pp.1990-2002, 1998.

]. R. Elpelt, P. Friedrichs, and J. Biela, Fast Switching with SiC VJFETs - Influence of the Device Topology, Materials Science Forum, vol.645, issue.648, pp.645-648, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.933

«. Stephani, The vertical silicon carbide JFET ? a fast and low solid state power switching device, EPE European Conference on Power Electronics and Applications, 2001.

. Stephani, Application-Oriented Unipolar Switching SiC Devices, In Materials Science Forum, pp.389-393, 2002.

P. Friedrichs, H. Mitlehner, R. Schörner, K. O. Dohnke, D. Stephani et al., Voltage Modular Switch Based on SiC VJFETs ? First Results fir a Fast 4, 2? Configuration, pp.433-436, 2003.

«. Stephani, Stacked high voltage switch based on SiC VJFETs, ISPSD International Symposium on Power Semiconductor Devices & IC's, pp.139-142, 2003.

]. P. Friedrichs and R. Elpelt, Layout considerations for improving the on-state performance of vertical SiC switching devices, 2007 IEEE Power Electronics Specialists Conference, pp.987-990, 2007.
DOI : 10.1109/PESC.2007.4342123

M. Gurfinkel, H. D. Xiong, K. P. Cheung, J. S. Suehle, J. B. Bernstein et al., Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$???$V$ Techniques, IEEE TRANSACTIONS ON ELECTRON DEVICE, pp.8-2004, 2008.
DOI : 10.1109/TED.2008.926626

B. Huang and . Zhang, The future of bipolar power transistors, IEEE Electron Device, p.11, 2001.
DOI : 10.1109/16.960379

]. E. Johnson, « Physical Limitations on Frequency and Power Parameters of Transistors, RCA REVIEW, pp.163-177, 1965.

V. D. Karimi, Development of a 10 kW High Power Density Three-Phase AC-DC-AC Converter Using SiC Devices, EPE European Conference on Power Electronics and Applications, 2009.

]. H. Lee, M. Domeij, C. M. Zetterling, M. Östling, F. Allerstam et al., Sveinbjörnsson, « 1200-V 5.2-m? . cm² 4H-SiC BJTs With a High Common- Emitter Current Gain, IEEE ELECTRON DEVICE LETTERS, pp.11-1007, 2007.

S. Lefebvre and F. Miserey, « Composants à semi-conducteur pour l'électronique de puissance, p.428, 2004.

]. S. Lefebvre, Z. Khatir, and F. , Saint-Eve, « Experimental Behavior of Single-Chip IGBT and COOLMOS Devices Under Repetitive Short-Circuit Conditions, IEEE TRANSACTIONS ON ELECTRON DEVICE, pp.2-276, 2005.

]. P. Liutanakul, A. B. Awan, S. Pierfederici, B. Nahid-mobarakeh, and F. Meibody-tabar, Linear Stabilization of a DC Bus Supplying a Constant Power Load: A General Design Approach, IEEE TRANSACTIONS ON POWER ELECTRONICS, p.2, 2010.
DOI : 10.1109/TPEL.2009.2025274

]. P. Magne, B. Nahid-mobarakeh, S. Pierfederici, and «. Dc-link, DC-Link Voltage Large Signal Stabilization and Transient Control Using a Virtual Capacitor, 2010 IEEE Industry Applications Society Annual Meeting, 2010.
DOI : 10.1109/IAS.2010.5615678

]. T. Mcnutt, A. Hefner, A. Mantooth, D. Berning, and S. H. Ryu, « Silicon carbide power MOSFET model and parameter extraction sequence, PESC Power Electronics Specialists Conference, pp.217-226, 2003.

]. R. Mousa and . Caractérisation, modélisation et intégration de JFET de puissance en carbure de silicium dans des convertisseurs haute température et haute tension, Thèse en Génie Electrique, 2009.

]. S. Munk-nielsen, L. N. Tutelea, and U. Jaeger, Simulation with ideal switch models combined with measured loss data provides a good estimate of power loss, Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129), 2000.
DOI : 10.1109/IAS.2000.882580

]. P. Neudeck and J. A. Powell, Performance limiting micropipe defects in silicon carbide wafers, IEEE ELECTRON DEVICE LETTERS, pp.2-63, 1994.
DOI : 10.1109/55.285372

]. S. Pierfederici, R. Meuret, F. Meibody-tabar, and B. Davat, Contribution ?? l'??tude de la stabilit?? des syst??mes distribu??s. Application aux r??seaux de bord d'avions, J3eA Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2005.
DOI : 10.1051/bib-j3ea:2005602

]. R. Raghunathan and B. J. Baliga, EBIC investigation of edge termination techniques for silicon carbide power devices, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings, pp.111-114, 1996.
DOI : 10.1109/ISPSD.1996.509460

]. A. Ritenour, D. C. Sheridan, V. Bondarenko, and J. B. , Casady, « Performance of 15mm² 1200V Normally-Off SiC VJFETs with 120 A Saturation Current, In Materials Science Forum, pp.645-648, 2010.

]. J. Roche, « Définition d'un dissipateur thermique en milieu industriel », Techniques de l'ingénieur, pp.3117-3133, 2007.

]. R. Rodriguez, « Planar Edge Terminations and Related Manufacturing Process Technology for High Power 4H-SiC Diodes », A Thesis submitted to the Faculty of Sciences, Physics Department, 2005.

]. R. Rupp and I. Zverev, SiC Power Devices: How to be Competitive towards Si-Based Solutions?, Materials Science Forum, vol.433, issue.436, pp.433-436, 2003.
DOI : 10.4028/www.scientific.net/MSF.433-436.805

]. R. Rupp, M. Treu, S. Voss, F. Björk, and T. Reimann, « 2 nd Generation SiC Schottky diodes: A new benchmark in SiC device ruggedness, ISPSD International Symposium on Power Semiconductor Devices & IC's, 2006.

]. R. Rupp, F. Björk, G. Deboy, M. Holz, M. Treu et al., A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses, Materials Science Forum, vol.645, issue.648, pp.645-648, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.885

J. Agarwal, A. Palmour, B. Lelis, C. Geil, . Scozzie et al., Reliability, and Robustness of 4H-SiC Power DMOSFETs, In Materials Science Forum, pp.645-648, 2010.

]. N. Saks and A. K. Agarwal, « Hall mobility and free electron density at the SiC/SiO 2 interface in 4H-SiC, In APPLIED PHYSICS LETTERS, vol.77, pp.20-3281, 2000.

]. H. Shichman and D. A. Hodges, Modeling and simulation of insulated-gate field-effect transistor switching circuits, IEEE Journal of Solid-State Circuits, vol.3, issue.3, pp.3285-289, 1968.
DOI : 10.1109/JSSC.1968.1049902

]. R. Stahlbush, K. X. Liu, and M. E. Twigg, Effects of Dislocations and Stacking Faults on the Reliability of 4H-SiC PiN Diodes, 2006 IEEE International Reliability Physics Symposium Proceedings, pp.90-94, 2006.
DOI : 10.1109/RELPHY.2006.251196

]. Y. Tairov and V. F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals, Journal of Crystal Growth, vol.43, issue.2, pp.209-212, 1978.
DOI : 10.1016/0022-0248(78)90169-0

J. F. Chante, F. De-palma, and . Sarrus, « A 4H-SiC Power-Density VJFET as Controlled Current Limiter, IEEE Transactions on Industry Applications, pp.5-1508, 2003.

]. K. Yamagochi and H. Kodera, Optimum design of triode-like JFET's by two-dimensional computer simulation, IEEE Transactions on Electron Devices, vol.24, issue.8, 1984.
DOI : 10.1109/T-ED.1977.18877

]. J. Zhao, P. Alexandrov, and X. Li, Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes, IEEE Electron Device Letters, pp.6-402, 2003.
DOI : 10.1109/LED.2003.813370

J. H. Zhao, P. Alexandrov, J. Zhang, and X. Li, Fabrication and Characterization of 11-kV Normally Off 4H-SiC Trenched-and-Implanted Vertical Junction FET, IEEE Electron Device Letters, pp.7-474, 2004.
DOI : 10.1109/LED.2004.830265

J. Zhang, P. Alexandrov, J. H. Zhao, and «. A. 500v, A 500V, Very High Current Gain (??=1517) 4H-SiC Bipolar Darlington Transistor, Materials Science Forum, pp.457-460, 2004.
DOI : 10.4028/www.scientific.net/MSF.457-460.1165

B. Jonas, M. Heath, S. H. Das, A. Ryu, J. Agarwal et al., « 9 kV 4H-SiC IGBTs with 88m?.cm² of R diff, on », In Materials Science Forum, pp.556-557, 2007.

R. Zhang, A. Callanan, A. Agarwal, M. O. Burk, J. 'loughlin et al., Scozzie, « 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC, In Materials Science Forum, pp.645-648, 2010.

]. L. Zhu, S. Balachandran, and T. P. Chow, Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT), In Materials Science Forum, pp.483-485, 2005.