Academic press Surface Wave Devices for Signal Processing Notice sur les travaux scientifiques, Archives de l'académie des sciences, Paris: Archive de l'Academie des sciences de l'institut de France, Surface Acoustic Wave Devices for Mobile and Wireless Communications Fundamentals of Piezoelectric Sensorics: Mechanical, Dielectric, and Sensorics, pp.294-843, 1880. ,
Acoustic wave sensors: theory, design and physico-chemical applications Surface acoustic wave devices, Prentice-Hall: Englewood. Cliffs NJ Linear Systems in Communication and Control, Chapitre I : Les dispositifs à onde acoustique de surface Moore, «Cramming More Components Onto Integrated Circuits,» Electronics36] R. Mahajan, K. Brown et V. Atluri, «The Evolution of Microprocessor Packaging,» Intel Technology Journal Q3 Microelectronics Packaging Handbook: Subsystem packaging, pp.206-1735, 1959. ,
«The Great Debate: Ball vs. Wedge,» Palomar Technologies [45] http://www.westbond.com/ball_bond_guide.htm, [En ligne]. [46] Packaging, Intel's Packaging Databook Chapter 14: Ball Grid Array. [47] J. R. Wilcox, chez Package Interconnects. Tech., IBM Corporation. [48] http://www.google.fr/imgres?q=flip+chip+bump&um, [En ligne]. [49] Flynn Carson, «Innovations Push Package on Package into new Markets,» Semiconductor International, 2010. [50] Intel's Packaging Databook Chapter 15: The Chip Scale Package, Semiconductor Manufacturing Handbookhtml. [En ligne]. [44]57] K. Onishi, S. Seki, Y. Taguchi et K. Eda, «Method of Manufacture of Surface Acoustic Wave Device Parker et C.J.Dunnrowicz, «Stabilized Surface Acoustic Wave Device Parker et J. Callerame, IEEE Ultrason. Symp. Proc., 1985. [61] T.E. Parker, J. Callerame et G.K. Montress, 39th Annual Symp. on Freq. Control, pp.29-184, 1979. ,
[75] Y.V. Gulyaev, Sov. Phys Ceramography: Preparation and Analysis of Ceramic Microstructures, Etat-Unis: The American Ceramic Society, New Diamond and Frontier Carbon technology Dvoesherstov, Surface and Bulk Acoustic Waves in Multilayer:Waves in Fluids and Solids Structures76] R. Stoneley, Roy. Astron. Proc. London Proc. London, Monthly Notices Geophys chez Third Int. Symposium on Acoustic Wave Devices for Future Mobile Communication Chapitre I : Les dispositifs à onde acoustique de surface Systems, Japan , 2007. [83] Y. Shimizu et T. Irino, IEEE Ultrason. Symp. Proc. , p. 373 Proc. IEEE Ultrason. Symp., p. 1886 Proc. Joint Conf. UFFC IEEE Int Proc. IEEE Ultrason. Symp Proc. IEEE Ultrason. Symp Proc. IEEE Ultrason. Symp., p. 205 Proc. IEEE/EIA Int. Freq. Contr.Symp, pp.1889-75, 1924. ,
SIMS study on the initial oxidation process of AlN ceramic substrate in the air, Applied Surface Science, vol.148, issue.1-2, p.73, 1999. ,
DOI : 10.1016/S0169-4332(99)00128-2
Periodic oxide breakdown during oxidation of AlN/Sapphire(0001) films, Applied Physics Letters, vol.80, issue.8, p.1364, 2002. ,
DOI : 10.1557/PROC-590-195
Thermal oxidation of single crystalline aluminum nitride, Materials Characterization, vol.58, issue.8-9, p.672, 2007. ,
DOI : 10.1016/j.matchar.2006.11.013
Stability of thin platinum films implemented in high-temperature microdevices, Sensors and Actuators A: Physical, vol.152, issue.1, p.39, 2009. ,
DOI : 10.1016/j.sna.2009.03.017
Platinum and palladium high-temperature transducers on langasite, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol.52, issue.4, p.545, 2005. ,
DOI : 10.1109/TUFFC.2005.1428035
Synthesis of epitaxial ??Al2O3 thin films by thermal oxidation of AlN/sapphire(0001) thin films, Applied Physics A, vol.77, issue.5, p.627, 2003. ,
DOI : 10.1103/PhysRevB.60.773
Interfacial structure of oxidized AlN(0002)???Si(111) thin film, Journal of Applied Physics, vol.98, issue.4, p.44908, 2005. ,
DOI : 10.1103/PhysRevB.33.3830
High-temperature 434 MHz surface acoustic wave devices based on GaPO/sub 4/, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol.53, issue.12, p.2465, 2006. ,
DOI : 10.1109/TUFFC.2006.194
Behavior of platinum/tantalum as interdigital transducers for SAW devices in high-temperature environments, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol.58, issue.3, p.603, 2011. ,
DOI : 10.1109/TUFFC.2011.1843
URL : https://hal.archives-ouvertes.fr/hal-00783914
Synthesis and microstructural characterisation of reactive RF magnetron sputtering AlN films for surface acoustic wave filters, Diamond and Related Materials, vol.13, issue.4-8, p.1111, 2004. ,
DOI : 10.1016/j.diamond.2003.11.064
Low???temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering, Applied Physics Letters, vol.36, issue.8, p.643, 1980. ,
DOI : 10.1116/1.570166
Highly oriented zinc oxide films grown by the oxidation of diethylzinc, Applied Physics Letters, vol.1, issue.5, p.449, 1980. ,
DOI : 10.1109/EDL.1980.25253
High quality AIN and GaN epilayers grown on (00???1) sapphire, (100), and (111) silicon substrates, Applied Physics Letters, vol.65, issue.22, p.2958, 1995. ,
DOI : 10.1063/1.114242
Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films, vol.306, issue.1, p.78, 1997. ,
DOI : 10.1016/S0040-6090(97)00231-9
Zinc oxide films prepared by sol-gel spin-coating, Thin Solid Films, vol.372, issue.1-2, p.30, 2000. ,
DOI : 10.1016/S0040-6090(00)01056-7
Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method, Thin Solid Films, vol.357, issue.2, p.98, 1999. ,
DOI : 10.1016/S0040-6090(99)00357-0
thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.2, issue.2, p.301, 1984. ,
DOI : 10.1116/1.572587
MBE growth and properties of ZnO on sapphire and SiC substrates, Journal of Electronic Materials, vol.13, issue.5, p.855, 1996. ,
DOI : 10.1007/BF02666649
Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE, Journal of Crystal Growth, vol.225, issue.1, p.73, 2001. ,
DOI : 10.1016/S0022-0248(01)01014-4
Room???temperature growth of AlN thin films by laser ablation, Applied Physics Letters, vol.59, issue.18, p.2234, 1992. ,
DOI : 10.1063/1.336905
The influence of imperfections on the nucleation and propagation of buckling driven delaminations, Journal of the Mechanics and Physics of Solids, vol.48, issue.4, p.709, 2000. ,
DOI : 10.1016/S0022-5096(99)00050-2
A comprehensive review of ZnO materials and devices, Journal of Applied Physics, vol.20, issue.4, p.41301, 2005. ,
DOI : 10.1088/0268-1242/20/4/001
Internal stresses in sputtered chromium, Thin Solid Films, vol.40, p.355, 1977. ,
DOI : 10.1016/0040-6090(77)90137-7
Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide, Journal of Applied Physics, vol.33, issue.21, p.3308, 1984. ,
DOI : 10.1016/0042-207X(83)90057-X
The Spatial Distribution of Deposition Rates in the DC Diode Sputtering of ZnO Thin Film, Japanese Journal of Applied Physics, vol.11, issue.12, p.1852, 1972. ,
DOI : 10.1143/JJAP.11.1852
High-Energy Neutral Atoms in the Sputtering of ZnO, Japanese Journal of Applied Physics, vol.20, issue.3, p.519, 1981. ,
DOI : 10.1143/JJAP.20.519
Effect of thickness on the structural and optical properties of ZnO films by r.f. magnetron sputtering, Surface and Coatings Technology, vol.185, issue.2-3, p.222, 2004. ,
DOI : 10.1016/j.surfcoat.2003.11.014
Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering, Journal of Applied Physics, vol.76, issue.7, p.3963, 2003. ,
DOI : 10.1063/1.357665
Effect of oxygen partial pressure on the structural and optical properties of ZnO film deposited by reactive sputtering, Applied Surface Science, vol.253, issue.24, p.9414, 2007. ,
DOI : 10.1016/j.apsusc.2007.06.005
Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates, Applied Physics Letters, vol.29, issue.9, p.91911, 2006. ,
DOI : 10.1557/JMR.1999.0468
Control of preferred orientation for ZnOx films: control of self-texture, Journal of Crystal Growth, vol.130, issue.1-2, p.269, 1993. ,
DOI : 10.1016/0022-0248(93)90861-P
Zinc nonstoichiometry in ZnO, Solid State Ionics, vol.173, issue.1-4, p.29, 2004. ,
DOI : 10.1016/j.ssi.2004.07.048
The effect of the oxygen concentration and the rf power on the zinc oxide films properties deposited by magnetron sputtering, Applied Surface Science, vol.245, issue.1-4, p.273, 2005. ,
DOI : 10.1016/j.apsusc.2004.10.035
ZnO thin films produced by magnetron sputtering, Ceramics International, vol.30, issue.7, p.1155, 2004. ,
DOI : 10.1016/j.ceramint.2003.12.197
Structural studies of zinc oxide films grown by RF magnetron sputtering, Synthetic Metals, vol.148, issue.1, p.37, 2005. ,
DOI : 10.1016/j.synthmet.2004.09.006
Properties of RF magnetron sputtered zinc oxide thin films, Journal of Crystal Growth, vol.255, issue.1-2, p.130, 2003. ,
DOI : 10.1016/S0022-0248(03)01243-0
URL : https://hal.archives-ouvertes.fr/hal-00328057
Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering, Applied Surface Science, vol.253, issue.17, p.7330, 2007. ,
DOI : 10.1016/j.apsusc.2007.03.020
Réalisation de l, p.68, 2003. ,
Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering, Thin Solid Films, vol.435, issue.1-2, p.193, 2003. ,
DOI : 10.1016/S0040-6090(03)00353-5
Physical and structural properties of ZnO sputtered films, Materials Letters, vol.55, issue.1-2, p.67, 2002. ,
DOI : 10.1016/S0167-577X(01)00621-8
Relationships between material properties of piezo-electric thin films and device characteristics of film bulk acoustic resonators, Thin Solid Films, vol.516, issue.2-4, p.475, 2007. ,
DOI : 10.1016/j.tsf.2007.07.145
Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD, Acta Physica Polonica A, vol.114, issue.5, p.1193, 2008. ,
DOI : 10.12693/APhysPolA.114.1193
«Elastic Waves at the Surface of Separation of Two Solids,» Roy, Soc. Proc. London, p.416, 1924. ,
Surface Acoustic Wave Devices in Telecommunications: Modelling and Simulation, 2000. ,
DOI : 10.1007/978-3-662-04223-6
A method for estimating optimal crystal cuts and propagation directions for excitation of piezoelectric surface waves, IEEE Transactions on Sonics and Ultrasonics, vol.15, issue.4, p.209, 1968. ,
DOI : 10.1109/T-SU.1968.29477
The Finite Element Method, 2004. ,
Finite Element Procedures, 1996. ,
The Mathematical Theory of Finite Element Methods, 1994. ,
Surface-Wave Devices for, Signal Processing in Studies in Electrical and Electronic Engineering, vol.19, 1991. ,
Surface Acoustic Wave Devices, Applications of Modern Acoustics, 1998. ,
Properties of Crystalline Silicon, London: The Institution of Electrical Ingineers, 1999. ,
Acoustic investigation of the elastic properties of ZnO films, Applied Physics Letters, vol.44, issue.23, p.1889, 1987. ,
DOI : 10.1109/T-SU.1985.31646
Temperature dependence of the elastic constants of aluminum, Journal of Physics and Chemistry of Solids, vol.40, issue.11, p.831, 1979. ,
DOI : 10.1016/0022-3697(79)90037-4
AlN/ZnO/diamond structure combining isolated and surface acoustic waves, Applied Physics Letters, vol.95, issue.23, p.233503, 2009. ,
DOI : 10.1063/1.2967816
URL : https://hal.archives-ouvertes.fr/hal-00475886
Highly Piezoelectric Shear-Horizontal-Type Boundary Waves, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 5B, pp.3057-3059, 1997. ,
DOI : 10.1143/JJAP.36.3057
ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient, Diamond and Related Materials, vol.14, issue.3-7, p.1175, 2005. ,
DOI : 10.1016/j.diamond.2005.01.002
Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films, Applied Physics Letters, vol.1, issue.3, p.33505, 2008. ,
DOI : 10.1063/1.1662397
Theoretical investigation of high velocity, temperature compensated Rayleigh waves along AlN/SiC substrates for high sensitivity mass sensors, Applied Physics Letters, vol.11, issue.2, p.21905, 2012. ,
DOI : 10.1063/1.2336303
Cachard et C. Pommier, Sensors and Actuators A , Vols, pp.1-246, 1995. ,
Rayleigh surface acoustic wave modes of (100) ZnO films on (111) diamond, Applied Physics Letters, vol.1, issue.3, p.32908, 2009. ,
DOI : 10.1109/58.981392
Modelling of SAW filter based on ZnO/diamond/Si layered structure including velocity dispersion, Applied Surface Science, vol.164, issue.1-4, p.200, 2000. ,
DOI : 10.1016/S0169-4332(00)00338-X
A novel method of fabricating ZnO/diamond/Si multilayers for surface acoustic wave (SAW) device applications, Thin Solid Films, vol.416, issue.1-2, p.190, 2002. ,
DOI : 10.1016/S0040-6090(02)00725-3
Surface Acoustic Wave Duplexer for US Personal Communication Services with Good Temperature Characteristics, Japanese Journal of Applied Physics, vol.44, issue.6B, p.4527, 2005. ,
DOI : 10.1143/JJAP.44.4527
Low-Impedance VHF and UHF Capacitive Silicon Bulk Acoustic Wave Resonators???Part I: Concept and Fabrication, IEEE Transactions on Electron Devices, vol.54, issue.8, p.2017, 2007. ,
DOI : 10.1109/TED.2007.901403
Electrical and optical properties of ZnO thin film as a function of deposition parameters, Solar Energy Materials and Solar Cells, vol.65, issue.1-4, p.37, 2011. ,
DOI : 10.1016/S0927-0248(00)00075-1
Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films, Applied Physics Letters, vol.1, issue.3, p.33505, 2008. ,
DOI : 10.1063/1.1662397
Synthesis of epitaxial ??Al2O3 thin films by thermal oxidation of AlN/sapphire(0001) thin films, Applied Physics A, vol.77, issue.5, pp.627-632, 2003. ,
DOI : 10.1103/PhysRevB.60.773
Interfacial structure of oxidized AlN(0002)???Si(111) thin film, Journal of Applied Physics, vol.98, issue.4, pp.44908-044913, 2005. ,
DOI : 10.1103/PhysRevB.33.3830
Sapphire bilayer structure an alternative to Langasite for ultra-hightemperature SAW applications ? ,
Sapphire as Packageless Structure for Harsh Environments SAW Applications ,
Si Structure -a Packageless Solution for Acoustic Wave Sensors ,
Surface Acoustic Wave sensor based on AlN/Sapphire structure for high temperature and high frequency applications, 2011 IEEE SENSORS Proceedings, pp.28-31, 2011. ,
DOI : 10.1109/ICSENS.2011.6126984
Silicon structure combining surface acoustic waves and waveguiding layer acoustic wave ,
Sapphire as Packageless Structure for Harsh Environments SAW Applications ,
Silicon structure combining surface acoustic waves and waveguiding layer acoustic wave ,
Laurent Le Brizoual and Ausrine Bartasyte The European COMSOL Conference, pp.17-19, 2010. ,
Si Structure -a Packageless Solution for Acoustic Wave Sensors ,
Surface Acoustic Wave sensor based on AlN/Sapphire structure for high temperature and high frequency applications, 2011 IEEE SENSORS Proceedings, pp.28-31, 2011. ,
DOI : 10.1109/ICSENS.2011.6126984