C. K. Campbell-]-d, J. Morgan, J. Curie, M. Cho, R. Anderson et al., Academic press Surface Wave Devices for Signal Processing Notice sur les travaux scientifiques, Archives de l'académie des sciences, Paris: Archive de l'Academie des sciences de l'institut de France, Surface Acoustic Wave Devices for Mobile and Wireless Communications Fundamentals of Piezoelectric Sensorics: Mechanical, Dielectric, and Sensorics, pp.294-843, 1880.

D. S. Ballantine, R. M. White, S. J. Martin, A. J. Ricco, E. T. Zellers et al., Acoustic wave sensors: theory, design and physico-chemical applications Surface acoustic wave devices, Prentice-Hall: Englewood. Cliffs NJ Linear Systems in Communication and Control, Chapitre I : Les dispositifs à onde acoustique de surface Moore, «Cramming More Components Onto Integrated Circuits,» Electronics36] R. Mahajan, K. Brown et V. Atluri, «The Evolution of Microprocessor Packaging,» Intel Technology Journal Q3 Microelectronics Packaging Handbook: Subsystem packaging, pp.206-1735, 1959.

T. Hsubhansali, S. Ameet, M. Packaging, and A. S. Bhansali, «The Great Debate: Ball vs. Wedge,» Palomar Technologies [45] http://www.westbond.com/ball_bond_guide.htm, [En ligne]. [46] Packaging, Intel's Packaging Databook Chapter 14: Ball Grid Array. [47] J. R. Wilcox, chez Package Interconnects. Tech., IBM Corporation. [48] http://www.google.fr/imgres?q=flip+chip+bump&um, [En ligne]. [49] Flynn Carson, «Innovations Push Package on Package into new Markets,» Semiconductor International, 2010. [50] Intel's Packaging Databook Chapter 15: The Chip Scale Package, Semiconductor Manufacturing Handbookhtml. [En ligne]. [44]57] K. Onishi, S. Seki, Y. Taguchi et K. Eda, «Method of Manufacture of Surface Acoustic Wave Device Parker et C.J.Dunnrowicz, «Stabilized Surface Acoustic Wave Device Parker et J. Callerame, IEEE Ultrason. Symp. Proc., 1985. [61] T.E. Parker, J. Callerame et G.K. Montress, 39th Annual Symp. on Freq. Control, pp.29-184, 1979.

G. Carlotti, G. Socino, A. Petri, E. Verona, S. Lett et al., [75] Y.V. Gulyaev, Sov. Phys Ceramography: Preparation and Analysis of Ceramic Microstructures, Etat-Unis: The American Ceramic Society, New Diamond and Frontier Carbon technology Dvoesherstov, Surface and Bulk Acoustic Waves in Multilayer:Waves in Fluids and Solids Structures76] R. Stoneley, Roy. Astron. Proc. London Proc. London, Monthly Notices Geophys chez Third Int. Symposium on Acoustic Wave Devices for Future Mobile Communication Chapitre I : Les dispositifs à onde acoustique de surface Systems, Japan , 2007. [83] Y. Shimizu et T. Irino, IEEE Ultrason. Symp. Proc. , p. 373 Proc. IEEE Ultrason. Symp., p. 1886 Proc. Joint Conf. UFFC IEEE Int Proc. IEEE Ultrason. Symp Proc. IEEE Ultrason. Symp Proc. IEEE Ultrason. Symp., p. 205 Proc. IEEE/EIA Int. Freq. Contr.Symp, pp.1889-75, 1924.

R. Yue, Y. Wang, Y. Wang, and C. Chen, SIMS study on the initial oxidation process of AlN ceramic substrate in the air, Applied Surface Science, vol.148, issue.1-2, p.73, 1999.
DOI : 10.1016/S0169-4332(99)00128-2

H. C. Kang, S. H. Seo, J. W. Kim, and D. Y. Noh, Periodic oxide breakdown during oxidation of AlN/Sapphire(0001) films, Applied Physics Letters, vol.80, issue.8, p.1364, 2002.
DOI : 10.1557/PROC-590-195

J. Chaudhuri, L. Nyakiti, R. G. Lee, Z. Gu, J. H. Edgar et al., Thermal oxidation of single crystalline aluminum nitride, Materials Characterization, vol.58, issue.8-9, p.672, 2007.
DOI : 10.1016/j.matchar.2006.11.013

R. M. Tiggelaar, R. G. Sanders, A. W. Groenland, and J. G. Gardeniers, Stability of thin platinum films implemented in high-temperature microdevices, Sensors and Actuators A: Physical, vol.152, issue.1, p.39, 2009.
DOI : 10.1016/j.sna.2009.03.017

J. Thiele and M. P. Da-cunha, Platinum and palladium high-temperature transducers on langasite, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol.52, issue.4, p.545, 2005.
DOI : 10.1109/TUFFC.2005.1428035

H. C. Kang, S. H. Seo, H. W. Jang, D. H. Kim, J. W. Kim et al., Synthesis of epitaxial ??Al2O3 thin films by thermal oxidation of AlN/sapphire(0001) thin films, Applied Physics A, vol.77, issue.5, p.627, 2003.
DOI : 10.1103/PhysRevB.60.773

H. C. Kang and D. Y. Noh, Interfacial structure of oxidized AlN(0002)???Si(111) thin film, Journal of Applied Physics, vol.98, issue.4, p.44908, 2005.
DOI : 10.1103/PhysRevB.33.3830

M. N. Hamidon, V. Skarda, N. M. White, F. Krispel, P. Krempl et al., High-temperature 434 MHz surface acoustic wave devices based on GaPO/sub 4/, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol.53, issue.12, p.2465, 2006.
DOI : 10.1109/TUFFC.2006.194

T. Aubert, O. Elmazria, B. Assouar, L. Bouvot, M. Hehn et al., Behavior of platinum/tantalum as interdigital transducers for SAW devices in high-temperature environments, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol.58, issue.3, p.603, 2011.
DOI : 10.1109/TUFFC.2011.1843

URL : https://hal.archives-ouvertes.fr/hal-00783914

M. B. Assouar, M. Hakiki, O. Elmazria, P. Alnot, and C. Tiusan, Synthesis and microstructural characterisation of reactive RF magnetron sputtering AlN films for surface acoustic wave filters, Diamond and Related Materials, vol.13, issue.4-8, p.1111, 2004.
DOI : 10.1016/j.diamond.2003.11.064

T. Shiosaki, T. Yamamoto, T. Oda, and A. Kawabata, Low???temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering, Applied Physics Letters, vol.36, issue.8, p.643, 1980.
DOI : 10.1116/1.570166

S. K. Ghandhi, R. J. Field, and J. R. Shealy, Highly oriented zinc oxide films grown by the oxidation of diethylzinc, Applied Physics Letters, vol.1, issue.5, p.449, 1980.
DOI : 10.1109/EDL.1980.25253

P. Kung, A. Saxler, and X. Zhang, High quality AIN and GaN epilayers grown on (00???1) sapphire, (100), and (111) silicon substrates, Applied Physics Letters, vol.65, issue.22, p.2958, 1995.
DOI : 10.1063/1.114242

M. Ohyama, H. Kozuka, and T. Yoko, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films, vol.306, issue.1, p.78, 1997.
DOI : 10.1016/S0040-6090(97)00231-9

Y. Natsume and H. Sakata, Zinc oxide films prepared by sol-gel spin-coating, Thin Solid Films, vol.372, issue.1-2, p.30, 2000.
DOI : 10.1016/S0040-6090(00)01056-7

M. Jina, J. Feng, Z. De-heng, M. Hong-lei, and L. Shu-ying, Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method, Thin Solid Films, vol.357, issue.2, p.98, 1999.
DOI : 10.1016/S0040-6090(99)00357-0

G. A. Nyberg and R. A. Buhrman, thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.2, issue.2, p.301, 1984.
DOI : 10.1116/1.572587

M. A. Johnson, S. Fujita, W. H. Rowland, W. C. Hughes, and J. W. , MBE growth and properties of ZnO on sapphire and SiC substrates, Journal of Electronic Materials, vol.13, issue.5, p.855, 1996.
DOI : 10.1007/BF02666649

J. Ohta, H. Fujioka, M. Sumiya, H. Koinuma, and M. Oshima, Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE, Journal of Crystal Growth, vol.225, issue.1, p.73, 2001.
DOI : 10.1016/S0022-0248(01)01014-4

K. Seki, X. Xu, H. Okabe, J. M. Frye, and J. B. Halpern, Room???temperature growth of AlN thin films by laser ablation, Applied Physics Letters, vol.59, issue.18, p.2234, 1992.
DOI : 10.1063/1.336905

J. W. Hutchinson, M. Y. Heb, and A. G. Evans, The influence of imperfections on the nucleation and propagation of buckling driven delaminations, Journal of the Mechanics and Physics of Solids, vol.48, issue.4, p.709, 2000.
DOI : 10.1016/S0022-5096(99)00050-2

Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov et al., A comprehensive review of ZnO materials and devices, Journal of Applied Physics, vol.20, issue.4, p.41301, 2005.
DOI : 10.1088/0268-1242/20/4/001

D. W. Hoffman and J. A. Thornton, Internal stresses in sputtered chromium, Thin Solid Films, vol.40, p.355, 1977.
DOI : 10.1016/0040-6090(77)90137-7

S. B. Krupanidhi and M. Sayer, Position and pressure effects in rf magnetron reactive sputter deposition of piezoelectric zinc oxide, Journal of Applied Physics, vol.33, issue.21, p.3308, 1984.
DOI : 10.1016/0042-207X(83)90057-X

M. Minakata, N. Chubachi, and Y. Kikuchui, The Spatial Distribution of Deposition Rates in the DC Diode Sputtering of ZnO Thin Film, Japanese Journal of Applied Physics, vol.11, issue.12, p.1852, 1972.
DOI : 10.1143/JJAP.11.1852

K. Tominaga, N. Ueshiba, Y. Shintani, and O. Toda, High-Energy Neutral Atoms in the Sputtering of ZnO, Japanese Journal of Applied Physics, vol.20, issue.3, p.519, 1981.
DOI : 10.1143/JJAP.20.519

S. Lin and J. Huang, Effect of thickness on the structural and optical properties of ZnO films by r.f. magnetron sputtering, Surface and Coatings Technology, vol.185, issue.2-3, p.222, 2004.
DOI : 10.1016/j.surfcoat.2003.11.014

P. Sharma and K. Sreenivas, Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering, Journal of Applied Physics, vol.76, issue.7, p.3963, 2003.
DOI : 10.1063/1.357665

J. P. Zhang, G. He, L. Q. Zhu, M. Liu, S. S. Pan et al., Effect of oxygen partial pressure on the structural and optical properties of ZnO film deposited by reactive sputtering, Applied Surface Science, vol.253, issue.24, p.9414, 2007.
DOI : 10.1016/j.apsusc.2007.06.005

J. W. Shin, J. Y. Lee, T. W. Kim, Y. S. No, W. J. Cho et al., Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates, Applied Physics Letters, vol.29, issue.9, p.91911, 2006.
DOI : 10.1557/JMR.1999.0468

N. Fujimurz, T. Nishihara, S. Goto, J. F. Xu, and T. Ito, Control of preferred orientation for ZnOx films: control of self-texture, Journal of Crystal Growth, vol.130, issue.1-2, p.269, 1993.
DOI : 10.1016/0022-0248(93)90861-P

K. Lott, S. Shinkarenko, T. Kirsanova, L. Türn, E. Gorohova et al., Zinc nonstoichiometry in ZnO, Solid State Ionics, vol.173, issue.1-4, p.29, 2004.
DOI : 10.1016/j.ssi.2004.07.048

I. Sayago, M. Aleixandren, L. Arès, M. J. Fernandez, J. P. Santos et al., The effect of the oxygen concentration and the rf power on the zinc oxide films properties deposited by magnetron sputtering, Applied Surface Science, vol.245, issue.1-4, p.273, 2005.
DOI : 10.1016/j.apsusc.2004.10.035

W. Gao and Z. Li, ZnO thin films produced by magnetron sputtering, Ceramics International, vol.30, issue.7, p.1155, 2004.
DOI : 10.1016/j.ceramint.2003.12.197

I. Sayago, M. Aleixandre, A. Martinez, M. J. Fernandez, J. P. Santos et al., Structural studies of zinc oxide films grown by RF magnetron sputtering, Synthetic Metals, vol.148, issue.1, p.37, 2005.
DOI : 10.1016/j.synthmet.2004.09.006

R. Ondo-ndong, G. Ferblantier, M. Kalfioui, A. Boyer, and A. Foucaran, Properties of RF magnetron sputtered zinc oxide thin films, Journal of Crystal Growth, vol.255, issue.1-2, p.130, 2003.
DOI : 10.1016/S0022-0248(03)01243-0

URL : https://hal.archives-ouvertes.fr/hal-00328057

S. Kang and Y. Joung, Influence of substrate temperature on the optical and piezoelectric properties of ZnO thin films deposited by rf magnetron sputtering, Applied Surface Science, vol.253, issue.17, p.7330, 2007.
DOI : 10.1016/j.apsusc.2007.03.020

I. Chapitre, /. Aln, . Idt, /. Zno, and . Eng, Réalisation de l, p.68, 2003.

S. Leea, K. Yoonb, D. Cheonga, and J. Lee, Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering, Thin Solid Films, vol.435, issue.1-2, p.193, 2003.
DOI : 10.1016/S0040-6090(03)00353-5

W. Water and S. Chu, Physical and structural properties of ZnO sputtered films, Materials Letters, vol.55, issue.1-2, p.67, 2002.
DOI : 10.1016/S0167-577X(01)00621-8

J. Lee, D. Cho, D. Kim, C. Park, and J. Park, Relationships between material properties of piezo-electric thin films and device characteristics of film bulk acoustic resonators, Thin Solid Films, vol.516, issue.2-4, p.475, 2007.
DOI : 10.1016/j.tsf.2007.07.145

H. Kräoncke, S. Figge, B. M. Epelbaum, and D. Hommel, Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD, Acta Physica Polonica A, vol.114, issue.5, p.1193, 2008.
DOI : 10.12693/APhysPolA.114.1193

R. Stonely, «Elastic Waves at the Surface of Separation of Two Solids,» Roy, Soc. Proc. London, p.416, 1924.

K. Hashimoto, Surface Acoustic Wave Devices in Telecommunications: Modelling and Simulation, 2000.
DOI : 10.1007/978-3-662-04223-6

J. J. Campbell and W. R. Jones, A method for estimating optimal crystal cuts and propagation directions for excitation of piezoelectric surface waves, IEEE Transactions on Sonics and Ultrasonics, vol.15, issue.4, p.209, 1968.
DOI : 10.1109/T-SU.1968.29477

O. C. Zienkiewicz and R. L. Taylor, The Finite Element Method, 2004.

K. J. Bathe, Finite Element Procedures, 1996.

S. C. Brenner and R. L. Scott, The Mathematical Theory of Finite Element Methods, 1994.

D. P. Morgan, Surface-Wave Devices for, Signal Processing in Studies in Electrical and Electronic Engineering, vol.19, 1991.

C. K. Campbell, Surface Acoustic Wave Devices, Applications of Modern Acoustics, 1998.

R. Hull, Properties of Crystalline Silicon, London: The Institution of Electrical Ingineers, 1999.

G. Carlotti, G. Socino, A. Petri, and E. Verona, Acoustic investigation of the elastic properties of ZnO films, Applied Physics Letters, vol.44, issue.23, p.1889, 1987.
DOI : 10.1109/T-SU.1985.31646

J. L. Tallon, Temperature dependence of the elastic constants of aluminum, Journal of Physics and Chemistry of Solids, vol.40, issue.11, p.831, 1979.
DOI : 10.1016/0022-3697(79)90037-4

O. Elmazria, S. Zhgoon, L. L. Brizoual, F. Sarry, D. Tsimbal et al., AlN/ZnO/diamond structure combining isolated and surface acoustic waves, Applied Physics Letters, vol.95, issue.23, p.233503, 2009.
DOI : 10.1063/1.2967816

URL : https://hal.archives-ouvertes.fr/hal-00475886

T. Yamashita, K. Hashimoto, and M. Yamaguchi, Highly Piezoelectric Shear-Horizontal-Type Boundary Waves, Japanese Journal of Applied Physics, vol.36, issue.Part 1, No. 5B, pp.3057-3059, 1997.
DOI : 10.1143/JJAP.36.3057

M. Hakiki, O. Elmazria, T. , M. B. Assouar, V. Mortet et al., ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient, Diamond and Related Materials, vol.14, issue.3-7, p.1175, 2005.
DOI : 10.1016/j.diamond.2005.01.002

C. Caliendo, Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films, Applied Physics Letters, vol.1, issue.3, p.33505, 2008.
DOI : 10.1063/1.1662397

C. Caliendo, Theoretical investigation of high velocity, temperature compensated Rayleigh waves along AlN/SiC substrates for high sensitivity mass sensors, Applied Physics Letters, vol.11, issue.2, p.21905, 2012.
DOI : 10.1063/1.2336303

A. Choujaa, N. Tirole, C. Bonjour, G. Martin, D. Hauden et al., Cachard et C. Pommier, Sensors and Actuators A , Vols, pp.1-246, 1995.

S. Wu, R. Ro, and Z. X. Lin, Rayleigh surface acoustic wave modes of (100) ZnO films on (111) diamond, Applied Physics Letters, vol.1, issue.3, p.32908, 2009.
DOI : 10.1109/58.981392

M. B. Assouar, O. Elmazria, R. Jime´nez-riobo´o, F. Sarry, and P. Alnot, Modelling of SAW filter based on ZnO/diamond/Si layered structure including velocity dispersion, Applied Surface Science, vol.164, issue.1-4, p.200, 2000.
DOI : 10.1016/S0169-4332(00)00338-X

S. Seo, W. Shin, and J. Park, A novel method of fabricating ZnO/diamond/Si multilayers for surface acoustic wave (SAW) device applications, Thin Solid Films, vol.416, issue.1-2, p.190, 2002.
DOI : 10.1016/S0040-6090(02)00725-3

M. Kadota, T. Nakao, N. Taniguchi, E. Takata, M. Mimura et al., Surface Acoustic Wave Duplexer for US Personal Communication Services with Good Temperature Characteristics, Japanese Journal of Applied Physics, vol.44, issue.6B, p.4527, 2005.
DOI : 10.1143/JJAP.44.4527

S. Pourkamali, G. K. Ho, and F. Ayazi, Low-Impedance VHF and UHF Capacitive Silicon Bulk Acoustic Wave Resonators???Part I: Concept and Fabrication, IEEE Transactions on Electron Devices, vol.54, issue.8, p.2017, 2007.
DOI : 10.1109/TED.2007.901403

W. Jeong and G. Park, Electrical and optical properties of ZnO thin film as a function of deposition parameters, Solar Energy Materials and Solar Cells, vol.65, issue.1-4, p.37, 2011.
DOI : 10.1016/S0927-0248(00)00075-1

C. Caliendo, Theoretical and experimental investigation of gigahertz-band, temperature-compensated electromechanical coupling configurations based on AlN films, Applied Physics Letters, vol.1, issue.3, p.33505, 2008.
DOI : 10.1063/1.1662397

H. C. Kang, S. H. Seo, H. W. Jang, D. H. Kim, J. W. Kim et al., Synthesis of epitaxial ??Al2O3 thin films by thermal oxidation of AlN/sapphire(0001) thin films, Applied Physics A, vol.77, issue.5, pp.627-632, 2003.
DOI : 10.1103/PhysRevB.60.773

H. C. Kang and D. Y. Noh, Interfacial structure of oxidized AlN(0002)???Si(111) thin film, Journal of Applied Physics, vol.98, issue.4, pp.44908-044913, 2005.
DOI : 10.1103/PhysRevB.33.3830

. Aln, Sapphire bilayer structure an alternative to Langasite for ultra-hightemperature SAW applications ?

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DOI : 10.1109/ICSENS.2011.6126984

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E. Blampain, O. Elmazria, T. Aubert, B. Assouar, O. Legrani et al., Surface Acoustic Wave sensor based on AlN/Sapphire structure for high temperature and high frequency applications, 2011 IEEE SENSORS Proceedings, pp.28-31, 2011.
DOI : 10.1109/ICSENS.2011.6126984