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.. La-loi-de-forouhi-bloomer, La fraction volumique des inclusions de silicium n'est pas constante dans toute la couche de silice Après la subdivision de la matrice, ` a chaque sous-couche d'´ epaisseur e i situéè a une profondeur déterminée correspond une fraction volumique moyenne f i constante. Les indices optiques des nc-Si sont décrits par, p.79

. Gallas, 5 × 10 16 at.cm ?2à?2à température ambiante, dans une couche de silice et recuitàrecuità 1100?C pendant deux heures sous une atmosphère d'azote. A titre de comparaison, les spectres des nc-Si obtenus par Chen, Fonctions diélectriques des nanocristaux de silicium obtenus par implantation ionique de 1, p.86

L. Valeur-du-gap-correspondàcorrespondà-l and .. , intersection de la courbe modélisant la partie linéaire de (? × E) 1/2 avec l'axe desénergiesdesénergies, p.88

. Comparaison-entre-la-taille-des-nanocristaux-obtenus-par-le-modèle-de-brus, 58] et par les paramètres de chen et al [68] incluant lesénergieslesénergies de gap obtenues par ellipsométrie . A titre de comparaison la variation de la taille des nanocristaux selon Sias et al, p.97

T. Image and .. , ´ echantillon contenant des nc-Ge obtenus par implantation et un recuit ` a 950?C pendant 1 h sous N 2, p.130

.. Spectres-expérimentaux-et-calculés-de-l-'´-echantillon-contenant-les-nc-ge, La reproduction des spectres est obtenue avec un modèlè a trois couches o` u les inclusions de germanium sont assimiléesassimiléesà du germanium massif (Ge) Le schéma du modèle utilisé est représenté sur la figure, p.131

.. La-taille-moyenne-des-nc, ´ equation (3.4.2) en utilisant les param` etres ? et n des références, p.89

.. Valeurs-des-coefficients-de-la-loi-de-forouhi, Bloomer caractérisant les propriétés optiques des nc-Si en fonction de la température d'implantation, p.96