Secondary Ion Mass Spectrometry : Basic Concepts, Instrumental Aspects, Applications and Trends (Chemical Analysis, vol.86, issue.67, pp.45-753, 1987. ,
molecular ions (R=rare gas), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.1, p.44, 1988. ,
DOI : 10.1116/1.574966
Optimization of SIMS analyses performed in the MCsx+ mode by using an in situ deposition of neutral Cs, Surface Science, vol.557, issue.1-3, pp.57-72, 2004. ,
DOI : 10.1016/j.susc.2004.03.015
Improved depth resolution by sample rotation during Auger electron spectroscopy depth profiling, Thin Solid Films, vol.124, issue.3-4, p.223, 1985. ,
DOI : 10.1016/0040-6090(85)90269-X
High resolution secondary ion mass spectrometry depth profiling using continuous sample rotation and its application to superlattice and delta???doped sample analysis, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.8, issue.6, p.4101, 1990. ,
DOI : 10.1116/1.576447
Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profiling, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, issue.3, p.829, 2001. ,
DOI : 10.1116/1.1368680
Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry, Surface and Interface Analysis, vol.36, issue.2, pp.172-176, 2004. ,
DOI : 10.1002/sia.1668
Cluster impacts at keV and MeV energies: Secondary emission phenomena, International Journal of Mass Spectrometry and Ion Processes, vol.174, issue.1-3, p.101, 1998. ,
DOI : 10.1016/S0168-1176(97)00294-2
URL : https://hal.archives-ouvertes.fr/in2p3-00014922
Ultra shallow doping profiling with SIMS, Reports on Progress in Physics, vol.58, issue.10, p.1321, 1995. ,
DOI : 10.1088/0034-4885/58/10/004
Elemental distributions around the oxide scales/alloy interfaces by SIMS and GDOES analyses, Surface and Interface Analysis, vol.36, issue.8, pp.973-976, 2004. ,
DOI : 10.1002/sia.1815
Characterization of Ni???B amorphous alloys with x-ray photoelectron and secondary ion mass spectroscopy, Surface and Interface Analysis, vol.1, issue.3, pp.459-465, 2005. ,
DOI : 10.1007/978-1-4757-5099-7
Optimization of secondary ion mass spectrometry for quantitative trace analysis, Analytica Chimica Acta, vol.297, issue.1-2, p.231, 1994. ,
DOI : 10.1016/0003-2670(94)00054-9
High resolution surface imaging of Co/ZrO2 catalyst by TOF-SIMS, Surface Science, vol.549, issue.1, pp.21-26, 2004. ,
DOI : 10.1016/j.susc.2003.10.043
Supernova graphite in the NanoSIMS: Carbon, oxygen and titanium isotopic compositions of a spherule and its TiC sub-components, Geochimica et Cosmochimica Acta, vol.69, issue.1, pp.177-188, 2005. ,
DOI : 10.1016/j.gca.2004.06.017
ion bombardment, Applied Physics Letters, vol.38, issue.10, p.1178, 1992. ,
DOI : 10.1063/1.92438
Secondary ion mass spectrometry profiling of shallow, implanted layers using quadrupole and magnetic sector instruments, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.3, p.313, 1987. ,
DOI : 10.1116/1.574152
Influence of the impact angle on the depth resolution and the sensitivity in SIMS depth profiling using a cesium ion beam, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.3, issue.3, p.1350, 1985. ,
DOI : 10.1116/1.572775
-bombarded surfaces, Physical Review B, vol.48, issue.23, p.16456, 1996. ,
DOI : 10.1063/1.323539
-irradiated surfaces: Positive-ion emission and work-function changes, Physical Review B, vol.221, issue.60, p.17141, 1996. ,
DOI : 10.1016/0039-6028(89)90580-3
Ionization probability of sputtered negative cluster ions:???Dependence on surface work function and emission velocity, Physical Review B, vol.52, issue.4, p.45415, 2001. ,
DOI : 10.1088/0034-4885/52/6/001
Secondary ion yield changes on rippled interfaces, Applied Physics Letters, vol.72, issue.8, p.906, 1998. ,
DOI : 10.1116/1.577303
Secondary Ion Mass Spectrometry, A Pratical Handbook for Depth Profiling and Bulk Impurity Analysis, 1989. ,
SIMS Instruments dans Secondary Ion Mass Spectrometry, Principles and Applications, 1989. ,
Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets, Physical Review, vol.126, issue.2, p.383, 1969. ,
DOI : 10.1103/PhysRev.126.1267
On the problem of whether mass or chemical bonding is more important to bombardment-induced compositional changes in alloys and oxides, Surface Science, vol.100, issue.1, p.85, 1980. ,
DOI : 10.1016/0039-6028(80)90446-X
Simulations of Ripple Formation on Ion-Bombarded Solid Surfaces, Physical Review Letters, vol.47, issue.13, p.2612, 1997. ,
DOI : 10.1103/PhysRevE.47.R17
Segregation of gallium at SiO2/Si interfaces during sputtering with Ga+ ions: experimental and computer simulation study, Applied Surface Science, vol.187, issue.1-2, p.145, 2002. ,
DOI : 10.1016/S0169-4332(01)00812-1
Barkas effect, shell correction, screening and correlation in collisional energy-loss straggling of an ion beam, The European Physical Journal D - Atomic, Molecular and Optical Physics, vol.23, issue.2, pp.201-209, 2003. ,
DOI : 10.1140/epjd/e2003-00032-x
Melting temperature effects on the size of ion-induced craters, Applied Physics Letters, vol.79, issue.22, p.3624, 2001. ,
DOI : 10.1016/0022-3115(94)90006-X
Atomistic simulation of radiation effects in carbon-based materials and nitrides, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.218, pp.9-18, 2004. ,
DOI : 10.1016/j.nimb.2003.12.044
Sputtering of Au (111) by 64keV/atom Au clusters, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.228, issue.1-4, pp.75-83, 2005. ,
DOI : 10.1016/j.nimb.2004.10.026
Surface structure dependence of impact processes of gas cluster ions, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.216, pp.185-190, 2004. ,
DOI : 10.1016/j.nimb.2003.11.077
MD simulation of surface smoothing due to cluster impact: estimation of radiation damage, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.228, issue.1-4, pp.1-8, 2005. ,
DOI : 10.1016/j.nimb.2004.10.013
Au irradiation by 25-keV Aun () clusters, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.212, pp.286-290, 2003. ,
DOI : 10.1016/S0168-583X(03)01498-8
Molecule Liftoff from Surfaces, Accounts of Chemical Research, vol.33, issue.2, pp.69-77, 2000. ,
DOI : 10.1021/ar970135i
Simulation of cluster impact induced desorption and cooling, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.228, issue.1-4, pp.9-15, 2005. ,
DOI : 10.1016/j.nimb.2004.10.014
Surface and Depth Analysis Based on Sputtering in Sputtering by Particle Bombardment III (Topics in Applied Physics, 1991. ,
Preferential sputtering of isotopes: Fluence and emission-angle dependence, Physical Review Letters, vol.194, issue.24, p.2673, 1989. ,
DOI : 10.1016/0029-554X(82)90578-X
Analysis of the primary process in isotope sputtering, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.119, issue.3, p.359, 1996. ,
DOI : 10.1016/0168-583X(96)00355-2
surfaces, Applied Physics Letters, vol.81, issue.4, p.363, 1993. ,
DOI : 10.1557/PROC-235-3
surfaces, Journal of Applied Physics, vol.138, issue.3, p.1633, 1994. ,
DOI : 10.1557/PROC-138-415
URL : https://hal.archives-ouvertes.fr/hal-00105640
Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.10, issue.3, p.468, 1992. ,
DOI : 10.1116/1.578173
energy, flux, and fluence on the formation and growth of sputtering???induced ripple topography on silicon, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.5, p.2709, 1996. ,
DOI : 10.1116/1.580192
Secondary-ion yields from surfaces bombarded with keV molecular and cluster ions, Physical Review Letters, vol.32, issue.15, p.1625, 1989. ,
DOI : 10.1063/1.328790
Surface smoothing with large current cluster ion beam, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.216, pp.191-195, 2004. ,
DOI : 10.1016/j.nimb.2003.11.078
Effect of surface morphology on the sputtering yields. I. Ion sputtering from self-affine surfaces, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.222, issue.3-4, pp.316-334, 2004. ,
DOI : 10.1016/j.nimb.2004.02.027
Effect of surface morphology on the sputtering yields. II. Ion sputtering from rippled surfaces, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.222, issue.3-4, pp.335-354, 2004. ,
DOI : 10.1016/j.nimb.2004.02.028
Sputtering by Particle Bombardment III, Topics in Applied Physics, vol.64, 1991. ,
DOI : 10.1007/3-540-53428-8
Energy- and angle-resolved depth of origin of isotopes sputtered from an elemental target, Physical Review B, vol.168, issue.10, p.5701, 1997. ,
DOI : 10.1016/0029-554X(80)91274-4
Depth of origin of sputtered atoms, Applied Physics, vol.50, issue.3, p.307, 1981. ,
DOI : 10.1016/0375-9601(79)90635-2
Depth of origin of sputtered atoms (Technical Report), Pure and Applied Chemistry, vol.12, issue.11, p.2361, 1993. ,
DOI : 10.1351/pac199365112361
Energy distributions in sputtering processes, Zeitschrift f???r Physik, vol.238, issue.5, p.433, 1970. ,
DOI : 10.1007/BF01409427
Angular distribution measurements of sputtered atoms with characteristic X-ray emission, Nuclear Instruments and Methods, vol.132, p.355, 1976. ,
DOI : 10.1016/0029-554X(76)90758-8
Ions. I. Measurement and Monte Carlo Calculations of Sputtering Yield, Japanese Journal of Applied Physics, vol.18, issue.9, p.1717, 1979. ,
DOI : 10.1143/JJAP.18.1717
Tracks in Modern Physics Col Charged and Excited States of Sputtered Atoms in Topics in Applied Physics, Sputtering by Particle Bombardment III Surface and Depth Analysis Based on Sputtering in Sputtering by Particle Bombardment III, Low-energy Ion Irradiation of Solid Surfaces, pp.231-232, 1991. ,
ion bombardment, Applied Physics Letters, vol.38, issue.10, p.1178, 1992. ,
DOI : 10.1063/1.92438
Evaluation of a cesium positive ion source for secondary ion mass spectrometry, Analytical Chemistry, vol.49, issue.13, p.2023, 1977. ,
DOI : 10.1021/ac50021a034
Optimization of SIMS analyses performed in the MCsx+ mode by using an in situ deposition of neutral Cs, Surface Science, vol.557, issue.1-3, pp.57-72, 2004. ,
DOI : 10.1016/j.susc.2004.03.015
Secondary ion yield variations due to cesium implantation in silicon, Surface Science, vol.126, issue.1-3, p.573, 1983. ,
DOI : 10.1016/0039-6028(83)90760-4
Secondary ion formation/survival during the initial stages of sputtering Si and SiO2 with Cs+, Surface Science, vol.555, issue.1-3, pp.193-208, 2004. ,
DOI : 10.1016/j.susc.2004.02.032
Effect of surface chemistry and work function in secondary ion mass spectrometry, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.1, issue.2, p.500, 1983. ,
DOI : 10.1116/1.571915
Direct Evidence of Electron Tunneling in the Ionization of Sputtered Atoms, Physical Review Letters, vol.7, issue.2, p.127, 1983. ,
DOI : 10.1103/PhysRevB.7.3541
Anomalous coverage dependence of secondary-ion emission from overlayers, Physical Review B, vol.126, issue.4, p.2311, 1984. ,
DOI : 10.1016/0039-6028(83)90760-4
Matrix element and transition rate for Auger neutralization of low energy ions near metal surfaces, Surface Science, vol.173, issue.2-3, p.565, 1986. ,
DOI : 10.1016/0039-6028(86)90210-4
Auger and resonant neutralization of low energy ions near metal surfaces, Surface Science, vol.173, issue.2-3, p.581, 1986. ,
DOI : 10.1016/0039-6028(86)90211-6
Some problems encountered in secondary ion emission applied to elementary analysis, Surface Science, vol.48, issue.1, p.161, 1975. ,
DOI : 10.1016/0039-6028(75)90315-5
The sputtering process and sputtered ion emission, Surface Science, vol.90, issue.2, p.588, 1979. ,
DOI : 10.1016/0039-6028(79)90363-7
On mechanisms of sputtered ion emission, Applications of Surface Science, vol.13, issue.1-2, p.241, 1982. ,
DOI : 10.1016/0378-5963(82)90030-7
Bond Breaking and the Ionization of Sputtered Atoms, Physical Review Letters, vol.14, issue.12, p.1476, 1986. ,
DOI : 10.1016/0168-583X(86)90136-9
The Mobility of Caesium Atoms Adsorbed on Tungsten, Physical Review, vol.40, issue.3, p.463, 1932. ,
DOI : 10.1103/PhysRev.40.463
The Evaporation of Atoms, Ions and Electrons from Caesium Films on Tungsten, Physical Review, vol.3, issue.6, p.423, 1933. ,
DOI : 10.1038/071607a0
Handbook of surface science, p.286, 1999. ,
Electronic structure of cesium adsorbed on Al(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.4, p.679, 1987. ,
DOI : 10.1116/1.574375
Work Function of Tantalum Carbide and the Effects of Adsorption and Sputtering of Cesium, Journal of Applied Physics, vol.26, issue.1, p.2682, 1971. ,
DOI : 10.1016/0039-6028(67)90111-2
Formation of the Cs/GaAs(001) interface: Work function, cesium sticking coefficient, and surface optical anisotropy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.15, issue.4, p.2074, 1997. ,
DOI : 10.1116/1.580611
Correlation of alkali metal-induced work function changes on semiconductor and metal surfaces, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.7, issue.4, p.915, 1989. ,
DOI : 10.1116/1.584580
Geometry and mode of growth of alkali metal/Si(100)2??1 interfaces, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.11, issue.4, p.1431, 1993. ,
DOI : 10.1116/1.586955
Secondary-ion emission probability in sputtering, Physical Review B, vol.9, issue.11, p.5661, 1979. ,
DOI : 10.1007/978-1-4684-7293-6
The caesium enhancement effect observed during SIMS ultra shallow depth profile analysis of SiO2 on Si, Applied Surface Science, vol.157, issue.3, p.191, 2000. ,
DOI : 10.1016/S0169-4332(99)00572-3
Optimization of SIMS analyses performed in the MCsx+ mode by using an in situ deposition of neutral Cs, Surface Science, vol.557, issue.1-3, pp.57-72, 2004. ,
DOI : 10.1016/j.susc.2004.03.015
In situ deposition of neutral Cs for Secondary Ion Mass Spectrometry, Applied Surface Science, vol.222, issue.1-4, pp.186-197, 2004. ,
DOI : 10.1016/j.apsusc.2003.08.020
simion for the personal computer in reflection, International Journal of Mass Spectrometry, vol.200, issue.1-3, pp.3-25, 2000. ,
DOI : 10.1016/S1387-3806(00)00305-5
Tridyn ??? A TRIM simulation code including dynamic composition changes, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.2, issue.1-3, p.814, 1984. ,
DOI : 10.1016/0168-583X(84)90321-5
Computer simulations of atomic collisions in solids with special emphasis on sputtering, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.18, issue.1-6, p.321, 1987. ,
DOI : 10.1016/S0168-583X(86)80055-6
On the velocity dependence for negative ionization of atoms sputtered from cesiated surfaces: An experimental study, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.27, issue.1, p.94, 1987. ,
DOI : 10.1016/0168-583X(87)90010-3
Electronic structure of cesium adsorbed on Al(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.4, p.679, 1987. ,
DOI : 10.1116/1.574375
Cs and O adsorption on Si(100) 2??1: A model system for promoted oxidation of semiconductors, Physical Review B, vol.175, issue.11, p.6213, 1987. ,
DOI : 10.1016/0039-6028(86)90094-4
)/Cs surfaces, Physical Review B, vol.61, issue.2, p.1125, 1989. ,
DOI : 10.1063/1.338372
Binding and charge transfer associated with alkali metal adsorption on single crystal nickel surfaces, Surface Science, vol.19, issue.2, p.403, 1970. ,
DOI : 10.1016/0039-6028(70)90050-6
Formation of the Cs/GaAs(001) interface: Work function, cesium sticking coefficient, and surface optical anisotropy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.15, issue.4, p.2074, 1997. ,
DOI : 10.1116/1.580611
Non-metallic behavior of cesium on GaAs(100), Surface Science, vol.208, issue.1-2, p.1, 1989. ,
DOI : 10.1016/0039-6028(89)90022-8
Secondary Ion Mass Spectrometry : Basic Concepts, Instrumental Aspects, Applications and Trends (Chemical Analysis J. Phys. E: Sci. Instrum, vol.86, issue.2, pp.14-1119, 1981. ,
Preferential sputtering of isotopes: Fluence and emission-angle dependence, Physical Review Letters, vol.194, issue.24, p.2673, 1989. ,
DOI : 10.1016/0029-554X(82)90578-X
Depth of origin of sputtered atoms, Applied Physics, vol.50, issue.3, p.307, 1981. ,
DOI : 10.1016/0375-9601(79)90635-2
Ge)/ 52, p.5 ,
Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profiling, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, issue.3, p.829, 2001. ,
DOI : 10.1116/1.1368680
surfaces, Applied Physics Letters, vol.81, issue.4, p.363, 1993. ,
DOI : 10.1557/PROC-235-3
surfaces, Journal of Applied Physics, vol.138, issue.3, p.1633, 1994. ,
DOI : 10.1557/PROC-138-415
URL : https://hal.archives-ouvertes.fr/hal-00105640
ion bombardment, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.1, p.76, 1988. ,
DOI : 10.1116/1.574972
ion bombardment, Applied Physics Letters, vol.38, issue.10, p.1178, 1992. ,
DOI : 10.1063/1.92438
Ion sputtering yield measurements for submicrometer thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.3, p.2077, 1988. ,
DOI : 10.1116/1.575188
Application of sample rotation to secondary ion mass spectrometry depth profiling of aluminum metallization, Surface and Interface Analysis, vol.5, issue.2, p.147, 1992. ,
DOI : 10.1116/1.583641
Theory of ripple topography induced by ion bombardment, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.4, p.2390, 1988. ,
DOI : 10.1116/1.575561
Dynamic Scaling of Ion-Sputtered Surfaces, Physical Review Letters, vol.71, issue.23, p.4746, 1995. ,
DOI : 10.1103/PhysRevLett.71.12
Ripple Wave Vector Rotation in Anisotropic Crystal Sputtering, Physical Review Letters, vol.54, issue.13, p.2735, 1998. ,
DOI : 10.1063/1.2808215
Spontaneous Pattern Formation on Ion Bombarded Si(001), Physical Review Letters, vol.48, issue.11, p.2330, 1999. ,
DOI : 10.1051/jphys:01987004803035300
URL : https://digital.library.unt.edu/ark:/67531/metadc710172/m2/1/high_res_d/7026.pdf
Dynamic Scaling of Growing Interfaces, Physical Review Letters, vol.41, issue.9, p.889, 1986. ,
DOI : 10.1007/BF01020601
Dynamics of Ripple Formation in Sputter Erosion: Nonlinear Phenomena, Physical Review Letters, vol.57, issue.17, p.3486, 1999. ,
DOI : 10.1017/CBO9780511599798
Universal properties of the two-dimensional Kuramoto-Sivashinsky equation, Physical Review Letters, vol.65, issue.1, p.12, 1993. ,
DOI : 10.1103/PhysRevLett.65.2422
Anisotropic Kuramoto-Sivashinsky Equation for Surface Growth and Erosion, Physical Review Letters, vol.43, issue.21, p.3894, 1995. ,
DOI : 10.1080/00018739400101505
Surface diffusion and fluctuations of growing interfaces, Physical Review Letters, vol.86, issue.3, p.321, 1991. ,
DOI : 10.1021/j100397a004
Surface Diffusion and Fluctuations of Growing Interfaces, Physical Review Letters, vol.67, issue.19, p.2747, 1991. ,
DOI : 10.1103/PhysRevLett.67.2747
Theory of improved resolution in depth profiling with sample rotation, Applied Physics Letters, vol.8, issue.26, p.3722, 1996. ,
DOI : 10.1063/1.115985
Theory of ripple topography induced by ion bombardment, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.4, p.2390, 1988. ,
DOI : 10.1116/1.575561
surfaces, Journal of Applied Physics, vol.138, issue.3, p.1633, 1994. ,
DOI : 10.1557/PROC-138-415
URL : https://hal.archives-ouvertes.fr/hal-00105640
Ion???induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.9, issue.3, p.1395, 1991. ,
DOI : 10.1116/1.577634
Limiting factors for secondary ion mass spectrometry profiling, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.12, issue.1, p.269, 1994. ,
DOI : 10.1116/1.587152
Ion sputtering yield measurements for submicrometer thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.3, p.2077, 1988. ,
DOI : 10.1116/1.575188
Theory of improved resolution in depth profiling with sample rotation, Applied Physics Letters, vol.8, issue.26, p.3722, 1996. ,
DOI : 10.1063/1.115985
SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions, Surface and Interface Analysis, vol.23, issue.1, pp.472-476, 2002. ,
DOI : 10.1002/sia.740230106
Surface analysis by secondary-ion mass spectroscopy during etching with gas-cluster ion beam, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.21, issue.1, p.47, 2003. ,
DOI : 10.1116/1.1524144
Fractal topography of surfaces exposed to gas-cluster ion beams and modeling simulations, Journal of Applied Physics, vol.749, issue.10, pp.5408-5418, 2004. ,
DOI : 10.1117/12.452556
Simulation of cluster impact induced desorption and cooling, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.228, issue.1-4, pp.9-15, 2005. ,
DOI : 10.1016/j.nimb.2004.10.014
Surface structure dependence of impact processes of gas cluster ions, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.216, pp.185-190, 2004. ,
DOI : 10.1016/j.nimb.2003.11.077
Surface smoothing with large current cluster ion beam, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.216, pp.191-195, 2004. ,
DOI : 10.1016/j.nimb.2003.11.078
Molecular Dynamics Simulations of Particle Bombardment Induced Desorption Processes:?? Alkanethiolates on Au(111), The Journal of Physical Chemistry B, vol.103, issue.16, pp.3195-3205, 1999. ,
DOI : 10.1021/jp984071k
Molecule Liftoff from Surfaces, Accounts of Chemical Research, vol.33, issue.2, pp.69-77, 2000. ,
DOI : 10.1021/ar970135i
URL : http://galilei.chem.psu.edu/~bjgweb/pdf/198bjg.pdf
High Yield Events of Molecular Emission Induced by Kiloelectronvolt Particle Bombardment, The Journal of Physical Chemistry B, vol.104, issue.29, pp.6785-6800, 2000. ,
DOI : 10.1021/jp001374h
cluster ion beam, Review of Scientific Instruments, vol.65, issue.4, p.1405, 1994. ,
DOI : 10.1016/0168-583X(87)90840-8
Une monocouche d'un métal alcalin croît la cinétique de la réaction en augmentant le coefficient d'adhésion des molécules et la cinétique de dissociation des molécules. En même temps, les liaisons dans le substrat sont affaiblies. Par conséquent, la couche facilite la migration de l'oxygène dans le substrat. A température ambiante, ceci s'observe pour un substrat silicium. Le césium s'adsorbe sur la surface de SiO 2 et capture de l'oxygène [C.24, Surf. Interface Anal., C, vol.27 ,
oxygène et d'un métal alcalin n'augmente pas seulement la cinétique de l'oxydation. La présence d'oxygène décale aussi le minimum du travail de sortie des électrons vers des taux de couverture plus élevés ,
Work Function of Tantalum Carbide and the Effects of Adsorption and Sputtering of Cesium, Journal of Applied Physics, vol.26, issue.1, p.2682, 1971. ,
DOI : 10.1016/0039-6028(67)90111-2
Binding and charge transfer associated with alkali metal adsorption on single crystal nickel surfaces, Surface Science, vol.19, issue.2, p.403, 1970. ,
DOI : 10.1016/0039-6028(70)90050-6
Catalytic oxidation of the GaAs(110) surface promoted by a Cs overlayer, Physical Review B, vol.86, issue.20, p.13851, 1996. ,
DOI : 10.1063/1.452089
(111), Surface Review and Letters, vol.04, issue.06, p.1215, 1997. ,
DOI : 10.1142/S0218625X97001565
Electronic structure of cesium adsorbed on Al(111), Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.4, p.679, 1987. ,
DOI : 10.1116/1.574375
Formation of the Cs/GaAs(001) interface: Work function, cesium sticking coefficient, and surface optical anisotropy, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.15, issue.4, p.2074, 1997. ,
DOI : 10.1116/1.580611
Fundamental Aspects of Heterogeneous Catalysis Studied by Particle Beams, p.43, 1991. ,
Theory of ripple topography induced by ion bombardment, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.4, p.2390, 1988. ,
DOI : 10.1116/1.575561
Dynamic Scaling of Ion-Sputtered Surfaces, Physical Review Letters, vol.71, issue.23, p.4746, 1995. ,
DOI : 10.1103/PhysRevLett.71.12
Ripple Wave Vector Rotation in Anisotropic Crystal Sputtering, Physical Review Letters, vol.54, issue.13, p.2735, 1998. ,
DOI : 10.1063/1.2808215
Spontaneous Pattern Formation on Ion Bombarded Si(001), Physical Review Letters, vol.48, issue.11, p.2330, 1999. ,
DOI : 10.1051/jphys:01987004803035300
URL : https://digital.library.unt.edu/ark:/67531/metadc710172/m2/1/high_res_d/7026.pdf
Dynamics of Ripple Formation in Sputter Erosion: Nonlinear Phenomena, Physical Review Letters, vol.57, issue.17, p.3486, 1999. ,
DOI : 10.1017/CBO9780511599798
Quantum dot and hole formation in sputter erosion, Applied Physics Letters, vol.78, issue.6, pp.805-807, 2001. ,
DOI : 10.1116/1.578173
Oxygen ion beam???induced abnormal surface topographic development at Ta/Si interface, Applied Physics Letters, vol.62, issue.77, p.2483, 1996. ,
DOI : 10.1063/1.117505
Molecule Liftoff from Surfaces, Accounts of Chemical Research, vol.33, issue.2, pp.69-77, 2000. ,
DOI : 10.1021/ar970135i
URL : http://galilei.chem.psu.edu/~bjgweb/pdf/198bjg.pdf
Surface structure dependence of impact processes of gas cluster ions, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.216, pp.185-190, 2004. ,
DOI : 10.1016/j.nimb.2003.11.077
High Yield Events of Molecular Emission Induced by Kiloelectronvolt Particle Bombardment, The Journal of Physical Chemistry B, vol.104, issue.29, pp.6785-6800, 2000. ,
DOI : 10.1021/jp001374h
Molecular Dynamics Simulations of Particle Bombardment Induced Desorption Processes:?? Alkanethiolates on Au(111), The Journal of Physical Chemistry B, vol.103, issue.16, pp.3195-3205, 1999. ,
DOI : 10.1021/jp984071k
Tridyn ??? A TRIM simulation code including dynamic composition changes, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.2, issue.1-3, p.814, 1984. ,
DOI : 10.1016/0168-583X(84)90321-5
Computer simulation of two-component target sputtering, Applied Physics A Solids and Surfaces, vol.76, issue.2, p.95, 1985. ,
DOI : 10.1016/0167-5087(83)91077-3