[. Schieck and M. Kunst, Frequency modulated microwave photoconductivity measurements for characterization of silicon wafers, Solid-State Electronics, vol.41, issue.11, p.1755, 1997.
DOI : 10.1016/S0038-1101(97)00149-4

C. Nagel, A. C. Berge, and . Aberle, Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors, Journal of Applied Physics, vol.86, issue.11, p.6218, 1999.
DOI : 10.1063/1.352174

[. Schmidt, M. Kerr, and P. P. Altermatt, Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities, Journal of Applied Physics, vol.75, issue.3, p.1494, 2000.
DOI : 10.1002/pssa.2210210140

[. Hahneiser and M. Kunst, Theoretical and experimental study of charge carrier kinetics in crystalline silicon, Journal of Applied Physics, vol.85, issue.11, p.7741, 1999.
DOI : 10.1088/0268-1242/11/11/012

[. Kunst, G. Müller, R. Schmidt, and H. Wetzel, Surface and volume decay processes in semiconductors studied by contactless transient photoconductivity measurements, Applied Physics A Solids and Surfaces, vol.61, issue.2, p.77, 1988.
DOI : 10.1002/bbpc.19870910425

[. Kunst and A. Sanders, Transport of excess carriers in silicon wafers, Semiconductor Science and Technology, vol.7, issue.1, p.51, 1992.
DOI : 10.1088/0268-1242/7/1/009

[. Rohatgi, J. Jeong, F. Wunsch, G. Citarella, O. Abdallah et al., High-efficiency screen-printed silicon ribbon solar cells by effective defect passivation and rapid thermal processing, Applied Physics Letters, vol.82, issue.2, pp.224-253, 2003.
DOI : 10.1063/1.373427

A. E. Naciri, L. Broch, L. Johann, and R. Kleim, Fixed polarizer, rotating-polarizer and fixed analyzer spectroscopic ellipsometer: accurate calibration method, effect of errors and testing, Thin Solid Films, vol.406, issue.1-2, pp.103-112, 2002.
DOI : 10.1016/S0040-6090(01)01777-1

F. G. Beck, [III.3] O. S. Heavens, Ph-D Optical properties of thin solid films, J. Appl. Phys, pp.60-3558, 1955.
URL : https://hal.archives-ouvertes.fr/hal-00014005

[. Grigull, U. Kreissig, H. Huber, and W. Assmann, Element-dependent ERDA probing depths using different detection systems, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.132, issue.4, pp.709-717, 1997.
DOI : 10.1016/S0168-583X(97)00489-8

S. Hüfner, Photoelectron Spectroscopy Principles and Applications Practical Surface Analysis, III.13] D.Briggs and M.P. Seah Surface & Coatings Technology 195, pp.102-106, 2000.

T. Asuha and . Kobayashi, Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si, Applied Physics Letters, vol.81, issue.18, pp.3410-3412, 2002.
DOI : 10.1063/1.363895

S. Asuha and . Imai, Nitric acid oxidation of silicon at ???120??C to form 3.5-nm SiO2???Si structure with good electrical characteristics, Applied Physics Letters, vol.85, issue.17, pp.3783-3785, 2004.
DOI : 10.1063/1.1484249

H. Caquineau, G. Dupont, J. P. Couderc, and B. Despax, : Comparison between two reactor designs, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.14, issue.4, p.2071, 1996.
DOI : 10.1116/1.580083

A. Dollet, J. P. Couderc, and B. Despax, Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. I. Bidimensional modelling, Plasma Sources Science and Technology, vol.4, issue.1, pp.94-106, 1995.
DOI : 10.1088/0963-0252/4/1/010

B. Stannowski and J. K. Rath, Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition, Journal of Applied Physics, vol.403, issue.5, pp.2618-2625, 2003.
DOI : 10.1063/1.1407317

A. Fujita and . Sasaki, Dangling Bonds in Memory-Quality Silicon Nitride Films, Journal of The Electrochemical Society, vol.132, issue.2, pp.398-402, 1985.
DOI : 10.1149/1.2113850

A. Santana and . Morales-acevedo, Optimization of PECVD SiN:H films for silicon solar cells, Solar Energy Materials and Solar Cells, vol.60, issue.2, pp.135-142, 2000.
DOI : 10.1016/S0927-0248(99)00078-1

[. Winderbaum, F. Yun, and O. Reinhold, Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cells, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.15, issue.3, pp.1020-1025, 1997.
DOI : 10.1116/1.580509

[. Swatowska and T. Stapinski, Amorphous hydrogenated silicon-nitride films for applications in solar cells, Vacuum, vol.82, issue.10, pp.942-946, 2008.
DOI : 10.1016/j.vacuum.2008.01.004

[. Yoo, S. K. Dhungel, and J. Yi, Properties of plasma enhanced chemical vapor deposited silicon nitride for the application in multicrystalline silicon solar cells, Thin Solid Films, vol.515, issue.12, pp.5000-5003, 2007.
DOI : 10.1016/j.tsf.2006.10.040

W. L. Warren, Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films, Journal of The Electrochemical Society, vol.139, issue.3, p.880, 1992.
DOI : 10.1149/1.2069319

H. Yan, Identification of a New Defect in Silicon Nitride Films, Japanese Journal of Applied Physics, vol.32, issue.Part 1, No. 2, pp.876-886, 1993.
DOI : 10.1143/JJAP.32.876

[. Leguijt, Low temperature surface passivation for silicon solar cells, Solar Energy Materials and Solar Cells, vol.40, issue.4, pp.297-345, 1996.
DOI : 10.1016/0927-0248(95)00155-7

[. R. Elmiger and M. Kunst, Investigation of charge carrier injection in silicon nitride/silicon junctions, Applied Physics Letters, vol.62, issue.4, pp.517-519, 1996.
DOI : 10.1063/1.117772

C. Swiatkowski and A. Sanders, Charge???carrier kinetics in semiconductors by microwave conductivity measurements, Journal of Applied Physics, vol.74, issue.3, pp.1763-1775, 1995.
DOI : 10.1063/1.355191

M. Molinari, Evolution with the annealing treatments of the photoluminescence mechanisms in a-SiNx:H alloys prepared by reactive evaporation, Journal of Applied Physics, vol.101, issue.12, p.123532, 2007.
DOI : 10.1209/epl/i2003-10256-2

[. Cai and A. Rohatgi, Effects of rapid thermal anneal on refractive index and hydrogen content of plasma???enhanced chemical vapor deposited silicon nitride films, Journal of Applied Physics, vol.28, issue.9, pp.5384-5388, 1996.
DOI : 10.1088/0022-3727/26/4/029

D. William, Brewer for agreeing to supervise me and for taking the time to help me

D. Klein-date and . Birth, Baccalauréat série S (scientifique), Maitrise de physique: DEA science de la matière et des interfaces Preparation of a Ph-D at the Hahn-Meitner-Institut in, 2000.