Material selection for double heterojunction lasers: A higher bandgap does not necessarily mean lower refractive index Diode lasers and photonic integrated circuits Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, Second Edition Quantum dot based nanophotonics and nanoelectronics Gain and the threshold of threedimensional quantum-box lasers Electronic structure of double stacked InAs/GaAs quantum dots: Experiment and theory Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1?x As/GaAs quantum dot lasers, Saito, K. Nishi, and S. Sugou. Shape transition of InAs quantum dots by growth at high temperature. App. Phys. Lett, pp.832-840, 1986. ,
0.94 ??m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, Semiconductor Science and Technology, vol.15, issue.11, pp.1061-1064, 2000. ,
DOI : 10.1088/0268-1242/15/11/309
Quantum dot structures: Fabrication technology and control of parameters, Semiconductors, vol.28, issue.11, pp.923-930, 2004. ,
DOI : 10.1557/PROC-571-109
Submonolayer Quantum Dots for High Speed Surface Emitting Lasers, Nanoscale Research Letters, vol.18, issue.2, pp.417-429, 2007. ,
DOI : 10.1007/978-3-662-07066-6
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-??m-wavelength at room temperature, Applied Physics Letters, vol.79, issue.16, pp.2633-2635, 2001. ,
DOI : 10.1103/PhysRevB.63.121304
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers, Applied Physics Letters, vol.76, issue.9, pp.1226-1228, 1996. ,
DOI : 10.1063/1.117419
Linear increase of the modal gain in 1.3 ??m InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers, Nanotechnology, vol.19, issue.27, pp.1-4, 2008. ,
DOI : 10.1088/0957-4484/19/27/275401
High-gain and lowthreshold InAs quantum-dot lasers on InP, App. Phys. Lett, vol.87, p.11, 2005. ,
URL : https://hal.archives-ouvertes.fr/hal-00485764
Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths, Journal of Crystal Growth, vol.272, issue.1-4, pp.154-160, 2004. ,
DOI : 10.1016/j.jcrysgro.2004.08.103
Multidimensional quantum well laser and temperature dependence of its threshold current, Applied Physics Letters, vol.17, issue.11, pp.939-941, 1982. ,
DOI : 10.1098/rspa.1952.0056
Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels, Applied Physics Letters, vol.73, issue.23, pp.3351-3354, 1998. ,
DOI : 10.1143/JJAP.36.4219
Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots, Applied Physics Letters, vol.82, issue.12, pp.1959-1961, 2003. ,
DOI : 10.1088/0268-1242/16/3/303
Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study, Physical Review B, vol.57, issue.8, pp.4696-4701, 1997. ,
DOI : 10.1063/1.334766
Stability of Biexcitons in Pyramidal InAs/GaAs Quantum Dots, physica status solidi (b), vol.60, issue.1, pp.115-118, 2001. ,
DOI : 10.1103/PhysRevB.60.R8481
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures, Journal of Electronic Materials, vol.36, issue.5, pp.486-490, 1999. ,
DOI : 10.1002/j.1538-7305.1967.tb01727.x
Fine Structure of Negatively and Positively Charged Excitons in Semiconductor Quantum Dots: Electron-Hole Asymmetry, Physical Review Letters, vol.98, issue.3, pp.98-111, 2007. ,
DOI : 10.1103/PhysRevB.71.075326
Nanostructures: Theory and Modelling, NanoScience and Technology, p.13, 2004. ,
DOI : 10.1007/978-3-662-08903-3
Spin states in circular and elliptical quantum dots, Physica B: Condensed Matter, vol.256, issue.258, pp.256-258, 1998. ,
DOI : 10.1016/S0921-4526(98)00486-4
Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots, Applied Physics Letters, vol.80, issue.12, pp.2162-2164, 2002. ,
DOI : 10.1063/1.1333718
Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers, Optical and Quantum Electronics, vol.61, issue.11, pp.381-394, 2006. ,
DOI : 10.1007/s11082-006-0038-1
Simultaneous two-state lasing in quantum-dot lasers, Applied Physics Letters, vol.82, issue.12, pp.1818-1820, 2003. ,
DOI : 10.1063/1.1447595
Ultrafast carrier dynamics in an InAs/InGaAs quantum dots-in-a-well heterostructure, Optics Express, vol.16, issue.2, pp.1165-1173, 2008. ,
DOI : 10.1364/OE.16.001165
Intrinsic mechanism for the poor luminescence properties of quantum-box systems, Physical Review B, vol.22, issue.19, pp.10945-10948, 1991. ,
DOI : 10.1143/JJAP.22.L804
Ultrafast electron capture into p-modulation-doped quantum dots, Applied Physics Letters, vol.85, issue.20, pp.4570-4572, 2004. ,
DOI : 10.1063/1.1476708
As/GaAs quantum dots, Physical Review B, vol.93, issue.16, pp.11532-11538, 1996. ,
DOI : 10.1016/0038-1098(94)00760-8
Electron relaxation in a quantum dot: Significance of multiphonon processes, Physical Review B, vol.45, issue.11, pp.7260-7263, 1992. ,
DOI : 10.1103/PhysRevB.45.6747
Multiphonon-assisted tunneling through deep levels: A rapid energy-relaxation mechanism in nonideal quantum-dot heterostructures, Physical Review B, vol.53, issue.20, pp.14532-14541, 1995. ,
DOI : 10.1063/1.331665
Carrier capture dynamics of InAs???GaAs quantum dots, Applied Physics Letters, vol.90, issue.12, p.15, 2007. ,
DOI : 10.1109/68.924013
The fast recovery dynamics of a quantum dot semiconductor optical amplifier, Applied Physics Letters, vol.94, issue.11 ,
DOI : 10.1109/JSTQE.2003.819494
On Ultrafast Optical Switching Based on Quantum-Dot Semiconductor Optical Amplifiers in Nonlinear Interferometers, IEEE Photonics Technology Letters, vol.16, issue.5, pp.1265-1267, 2004. ,
DOI : 10.1109/LPT.2004.826260
Low threshold, large To injection laser emission from (InGa)As quantum dots, Electronics Letters, vol.30, issue.17, pp.1416-1417, 1994. ,
DOI : 10.1049/el:19940939
High temperature performance of self-organised quantum dot laser with stacked p-doped active region, Electronics Letters, vol.38, issue.14, pp.712-713, 2002. ,
DOI : 10.1049/el:20020509
Effect of p-Doping of the Active Region on the Temperature Stability of InAs???GaAs QD Lasers, Semiconductors, vol.77, issue.4, pp.477-480, 2005. ,
DOI : 10.1134/1.1900266
Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser, Semiconductor Science and Technology, vol.11, issue.4, pp.554-567, 1996. ,
DOI : 10.1088/0268-1242/11/4/017
Theory of the linewidth of semiconductor lasers, IEEE Journal of Quantum Electronics, vol.18, issue.2, pp.259-264, 1982. ,
DOI : 10.1109/JQE.1982.1071522
Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers, IEEE Journal of Quantum Electronics, vol.25, issue.11, pp.2297-2306, 1989. ,
DOI : 10.1109/3.42059
Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers: experimental results, IEEE Photonics Technology Letters, vol.10, issue.1, pp.54-56, 1998. ,
DOI : 10.1109/68.651101
The dynamical complexity of optically injected semiconductor lasers, Physics Reports, vol.416, issue.1-2, pp.1-128, 2005. ,
DOI : 10.1016/j.physrep.2005.06.003
Linewidth enhancement factor in semiconductor lasers, p.18, 2004. ,
URL : https://hal.archives-ouvertes.fr/hal-00265337
Submonolayer InGaAs???GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor, Applied Physics Letters, vol.85, issue.15, pp.3259-3261, 2004. ,
DOI : 10.1049/el:20030944
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes, IEEE Photonics Technology Letters, vol.11, issue.12, pp.1527-1529, 1999. ,
DOI : 10.1109/68.806834
Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser, Applied Physics Letters, vol.83, issue.23, p.18, 2003. ,
DOI : 10.1109/3.572156
InGaAs-GaAs quantum-dot lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol.3, issue.2, pp.196-205, 1997. ,
DOI : 10.1109/2944.605656
Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers, Applied Physics Letters, vol.84, issue.7, pp.1058-1060, 2004. ,
DOI : 10.1063/1.102688
Impact of intraband relaxation on the performance of a quantum-dot laser, IEEE Journal of Selected Topics in Quantum Electronics, vol.9, issue.5, pp.1308-1314, 2003. ,
DOI : 10.1109/JSTQE.2003.819494
Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser, Electronics Letters, vol.41, issue.6, pp.18-126, 2005. ,
DOI : 10.1049/el:20057956
The linewidth enhancement factor ?? of quantum dot semiconductor lasers, Optics Express, vol.14, issue.7, pp.2950-2955, 2006. ,
DOI : 10.1364/OE.14.002950
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE, Applied Physics Letters, vol.17, issue.3, pp.109-111, 1970. ,
DOI : 10.1063/1.1755139
Heterostructures, Physical Review Letters, vol.180, issue.14, pp.827-830, 1974. ,
DOI : 10.1103/PhysRev.180.852
GaInAsP/InP Surface Emitting Injection Lasers, Japanese Journal of Applied Physics, vol.18, issue.12, pp.2329-2330, 1979. ,
DOI : 10.1143/JJAP.18.2329
Room???temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser, Applied Physics Letters, vol.9, issue.4, pp.348-350, 1984. ,
DOI : 10.1109/JQE.1973.1077441
Room temperature CW operation of GaAs vertical cavity surface emitting laser, IEICE TRANSACTIONS, issue.11, pp.71-1089, 1988. ,
Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes, Electronics Letters, vol.25, issue.20, pp.1377-1378, 1989. ,
DOI : 10.1049/el:19890921
Low-threshold electrically pumped vertical-cavity surface-emitting microlasers, Electronics Letters, vol.25, issue.17, pp.1123-1124, 1989. ,
DOI : 10.1049/el:19890754
Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers, IEEE Journal of Quantum Electronics, vol.27, issue.6, pp.1402-1409, 1991. ,
DOI : 10.1109/3.89957
Transverse mode characteristics of vertical cavity surface???emitting lasers, Applied Physics Letters, vol.54, issue.3, pp.218-220, 1990. ,
DOI : 10.1063/1.100717
Lasing mode selection in vertical-cavity surface emitting-laser diodes, IEEE Photonics Technology Letters, vol.5, issue.7, pp.761-764, 1993. ,
DOI : 10.1109/68.229798
Spatial holeburning effects on the dynamics of vertical cavity surface-emitting laser diodes, IEEE Journal of Quantum Electronics, vol.31, issue.8, pp.1423-1431, 1995. ,
DOI : 10.1109/3.400393
OPTICAL GAIN IN III???V BULK AND QUANTUM WELL SEMICONDUCTORS, Quantum Well Lasers, pp.19-27, 1993. ,
DOI : 10.1016/B978-0-08-051558-8.50007-5
Tailoring the birefringence in a vertical???cavity semiconductor laser, Applied Physics Letters, vol.58, issue.24, pp.3635-3637, 1996. ,
DOI : 10.1063/1.117007
Polarization behavior of vertical-cavity surface-emitting lasers: Experiments, models and applications, AIP Conference Proceedings, pp.403-417, 2001. ,
DOI : 10.1063/1.1372738
Multi-Excitons in GaAs/AlGaAs Quantum Dot Arrays, p.20, 2003. ,
Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth, Applied Physics Letters, vol.89, issue.14, pp.89-109, 2006. ,
DOI : 10.1117/12.424792
High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser, Journal of Applied Physics, vol.44, issue.10, pp.83-5561, 1998. ,
DOI : 10.1088/0268-1242/11/4/017
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers, Electronics Letters, vol.32, issue.15, pp.1374-1375, 1996. ,
DOI : 10.1049/el:19960921
Room temperature lasing from InGaAs quantum dots, Electronics Letters, vol.32, issue.18, p.21, 1996. ,
DOI : 10.1049/el:19961147
Low-threshold oxide-confined 1.3-µm quantum-dot laser, Electron. Lett, vol.12, issue.3, pp.230-232, 2000. ,
1.24?????m InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine, Applied Physics Letters, vol.5, issue.16, pp.2992-2994, 2004. ,
DOI : 10.1134/1.1187932
Luminescence in excess of 1.5 µm at room-temperature of InAs quantum dots capped by a thin InGaAs strainreducing layer, J. Cryst. Growth, pp.237-239, 2002. ,
Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate, Semicond. Sci. Technol, vol.21, pp.691-696, 2006. ,
Room???temperature lasing operation of a quantum???dot vertical???cavity surface???emitting laser, Applied Physics Letters, vol.68, issue.21, pp.3140-3242, 1996. ,
DOI : 10.1063/1.116808
Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser, Applied Physics Letters, vol.75, issue.1, pp.22-24, 1999. ,
DOI : 10.1109/68.502250
Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy, Journal of Crystal Growth, vol.272, issue.1-4, pp.143-147, 2004. ,
DOI : 10.1016/j.jcrysgro.2004.08.102
Controlling polarization of quantum-dot surface-emitting lasers by using structurally anisotropic self-assembled quantum dots, Applied Physics Letters, vol.71, issue.5, pp.590-592, 1997. ,
DOI : 10.1103/PhysRevB.41.9843
Injection locking properties of a semiconductor laser, IEEE Journal of Quantum Electronics, vol.18, issue.6, pp.976-983, 1982. ,
DOI : 10.1109/JQE.1982.1071632
Route to polarization switching induced by optical injection in vertical-cavity surface-emitting lasers, Physical Review A, vol.15, issue.2, pp.73-97, 2006. ,
DOI : 10.1364/JOSAB.16.001059
URL : https://hal.archives-ouvertes.fr/hal-00207955
Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injection, IEEE Journal of Quantum Electronics, vol.32, issue.8, pp.1456-1468, 1996. ,
DOI : 10.1109/3.511559
Bandwidth enhancement and broadband noise reduction in injection-locked semiconductor lasers, IEEE Photonics Technology Letters, vol.7, issue.7, pp.709-711, 1995. ,
DOI : 10.1109/68.393181
Bandwidth Enhancement by Master Modulation of Optical Injection-Locked Lasers, Journal of Lightwave Technology, vol.26, issue.15, pp.2584-2593, 2008. ,
DOI : 10.1109/JLT.2008.927192
Coulomb Damped Relaxation Oscillations in Semiconductor Quantum Dot Lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol.13, issue.5, pp.1242-1248, 2004. ,
DOI : 10.1109/JSTQE.2007.905148
Excitability in a Quantum Dot Semiconductor Laser with Optical Injection, Physical Review Letters, vol.117, issue.15, pp.72-74, 2007. ,
DOI : 10.1049/el:20040270
Semiconductor laser with optical feedback: From excitable to deterministic low-frequency fluctuations, Physical Review E, vol.4, issue.2, pp.1551-1557, 1999. ,
DOI : 10.1142/S0218127494000599
Interspike Time Distribution in Noise Driven Excitable Systems, Physical Review Letters, vol.50, issue.2, pp.292-295, 1998. ,
DOI : 10.1137/0150043
Excitability and coherence resonance in lasers with saturable absorber, Physical Review E, vol.32, issue.6, pp.6580-6588, 1999. ,
DOI : 10.1109/3.517019
Carrier Relaxation and Modulation Response of 1.3-$\mu$m InAs???GaAs Quantum Dot Lasers, Journal of Lightwave Technology, vol.27, issue.23, pp.5442-5450, 2009. ,
DOI : 10.1109/JLT.2009.2030141
A five-level timedomain model for quantum dot lasers: influence of carrier capture and escape processes on dynamic and static characteristic, Proc. of LFNM, 10.1109/LFNM.2001.930206, pp.64-68, 2001. ,
Dynamics of vertical-cavity surface-emitting lasers with optical injection: a two-mode model approach, Journal of the Optical Society of America B, vol.26, issue.8, pp.1603-1613, 2009. ,
DOI : 10.1364/JOSAB.26.001603
URL : https://hal.archives-ouvertes.fr/hal-00406920
Bifurcation to polarization switching and locking in vertical-cavity surface-emitting lasers with optical injection, Physical Review A, vol.3, issue.3, pp.31803-31828, 2007. ,
DOI : 10.1063/1.1807519
URL : https://hal.archives-ouvertes.fr/hal-00207629
Antiphase dynamics in a multimode semiconductor laser with optical injection, Physical Review A, vol.79, issue.2, pp.25-97, 2009. ,
DOI : 10.1109/3.206567
Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states, Technical Physics Letters, vol.147, issue.1, pp.4-7, 2003. ,
DOI : 10.1134/S1063785007010026
Low-frequency fluctuations in two-state quantum dot lasers, Optics Letters, vol.31, issue.15, pp.2302-2304, 2006. ,
DOI : 10.1364/OL.31.002302
Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation, Optics Express, vol.18, issue.12, pp.12832-12838, 2010. ,
DOI : 10.1364/OE.18.012832
Gain-dependent polarization properties of vertical-cavity lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol.1, issue.2, pp.661-666, 1995. ,
DOI : 10.1109/2944.401255
Control of vertical-cavity laser polarization with anisotropic transverse cavity geometries, IEEE Photonics Technology Letters, vol.6, issue.1, pp.40-42, 1994. ,
DOI : 10.1109/68.265883
Effect of photon-energy-dependent loss and gain mechanisms on polarization switching in vertical-cavity surface-emitting lasers, Journal of the Optical Society of America B, vol.16, issue.11, pp.2106-2113, 1999. ,
DOI : 10.1364/JOSAB.16.002106
Elasto???optic anisotropy and polarization orientation of vertical???cavity surface???emitting semiconductor lasers, Applied Physics Letters, vol.67, issue.8, pp.1041-1043, 1996. ,
DOI : 10.1063/1.116924
Polarization fluctuations in vertical-cavity semiconductor lasers, Physical Review A, vol.56, issue.5, pp.4191-4205, 1998. ,
DOI : 10.1103/PhysRevA.56.845
Microscopic theory of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers, Physical Review A, vol.58, issue.5, pp.61-90, 2000. ,
DOI : 10.1103/PhysRevA.58.4191
Macroscopic versus microscopic description of polarization properties of optically anisotropic vertical-cavity surface-emitting lasers, IEEE Journal of Quantum Electronics, vol.36, issue.8, pp.956-970, 2000. ,
DOI : 10.1109/3.853556
Light-polarization dynamics in surface-emitting semiconductor lasers, Physical Review A, vol.61, issue.2, pp.1728-1739, 1995. ,
DOI : 10.1016/0167-2789(92)90170-R
Polarization properties of vertical-cavity surface-emitting lasers, IEEE Journal of Quantum Electronics, vol.33, issue.5, pp.765-783, 1997. ,
DOI : 10.1109/3.572151
Role of optical anisotropies in the polarization properties of surface-emitting semiconductor lasers, Physical Review A, vol.66, issue.2, pp.1647-1660, 1996. ,
DOI : 10.1063/1.113516
Polarization control of long-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding, pp.31-32, 2004. ,
Temperature dependence of gain???guided vertical???cavity surface emitting laser polarization, Applied Physics Letters, vol.5, issue.16, pp.2062-2064, 1994. ,
DOI : 10.1109/68.195980
Role of optical anisotropies in the polarization properties of surfaceemitting semiconductor lasers [phys. rev, Phys. Rev. A, vol.54, issue.556, pp.1647-4641, 1996. ,
Polarization dynamics in a vertical-cavity laser with an axial magnetic field, Physical Review A, vol.32, issue.6, pp.3731-3733, 1996. ,
DOI : 10.1103/PhysRevA.52.1728
Symmetry breaking in vertical-cavity semiconductor lasers, Laser Phys, vol.7, issue.1, pp.63-67, 1997. ,
Analysis of elliptically polarized states in vertical-cavity-surface-emitting lasers, Phys. Rev. A, vol.69, issue.033810, pp.32-35, 2004. ,
Two-variable reduction of the San Miguel???Feng???Moloney model for vertical-cavity surface-emitting lasers, Physical Review A, vol.9, issue.6, pp.4660-4667, 1999. ,
DOI : 10.1088/1355-5111/9/5/006
Characteristics of polarization switching from the low to the high frequency mode in vertical-cavity surface-emitting lasers, Applied Physics Letters, vol.78, issue.23, pp.3574-3576, 2001. ,
DOI : 10.1103/PhysRevA.56.4094
Experimental and theoretical investigations on elliptically polarized dynamical transition states in the polarization switching of vertical-cavity surface-emitting lasers, Optics Communications, vol.235, issue.4-6, pp.421-434, 2004. ,
DOI : 10.1016/j.optcom.2004.02.073
Linear anisotropies and polarization properties of vertical-cavity surface-emitting semiconductor lasers, Physical Review A, vol.47, issue.5, pp.4094-4105, 1997. ,
DOI : 10.1103/PhysRevB.47.15776
Control of fine-structure splitting and excitonic binding energies in selected individual InAs???GaAs quantum dots, Applied Physics Letters, vol.89, issue.26, pp.89-124, 2006. ,
DOI : 10.1103/PhysRevB.71.155325
Sizedependent fine-structure splitting in self-organized InAs/GaAs quantum dots, Phys. Rev. Lett, vol.95, issue.36, pp.35-37, 2005. ,
Semiconductor quantum dots, p.36, 2008. ,
DOI : 10.1016/B978-0-12-374171-4.00002-2
Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots, Applied Physics Letters, vol.86, issue.4, p.37, 2005. ,
DOI : 10.1103/PhysRevLett.84.733
Spin relaxation and thermalization of excitons in GaAs quantum wells, App. Phys. Lett, vol.58, issue.17, pp.1902-1904, 1991. ,
Coherent Control of the Optical Orientation of Excitons in Quantum Wells, Physical Review Letters, vol.78, issue.17, pp.3222-3225, 1997. ,
DOI : 10.1103/PhysRevLett.78.2228
Room???temperature electron spin dynamics in GaAs/AlGaAs quantum wells, Applied Physics Letters, vol.61, issue.6, pp.797-799, 1996. ,
DOI : 10.1063/1.116536
Spin relaxation of excitons in zero-dimensional InGaAs quantum disks, Applied Physics Letters, vol.42, issue.11, pp.1341-1343, 1998. ,
DOI : 10.1103/PhysRev.96.266
Spin Relaxation Quenching in Semiconductor Quantum Dots, Physical Review Letters, vol.54, issue.8, pp.1634-1637, 2001. ,
DOI : 10.1103/PhysRevB.54.R17339
Spin relaxation dynamics in highly uniform InAs quantum dots, Applied Physics Letters, vol.42, issue.18, pp.3576-3578, 2004. ,
DOI : 10.1103/PhysRevB.62.16840
Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots, Japanese Journal of Applied Physics, vol.42, issue.Part 1, No. 6A, pp.3340-3349, 2003. ,
DOI : 10.1143/JJAP.42.3340
Spin Physics in Semiconductors, volume 157 of Springer Series in Solid-State Sciences, p.38, 2008. ,
Dimensionally constrained Dyakonov-Perel spin relaxation in n-InGaAs channels: transition from 2D to 1D, New J. Phys, vol.9, issue.342, pp.1-12, 2007. ,
Direct observation of the electron spin relaxation induced by nuclei in quantum dots, Phys. Rev. Lett, pp.94-132, 2005. ,
Spin dynamics and hyperfine interaction in InAs semiconductor quantum dots, physica status solidi (b), vol.81, issue.10, pp.243-2266, 2006. ,
DOI : 10.12693/APhysPolA.106.185
Spin redistribution due to Pauli blocking in quantum dots, Physical Review B, vol.54, issue.52, pp.64-103, 2001. ,
DOI : 10.1103/PhysRevB.54.8743
Impact of spin blocking on the energy relaxation of electrons in quantum-dot lasers, Applied Physics Letters, vol.84, issue.15, pp.2736-2738, 2004. ,
DOI : 10.1049/el:20020509
Polarization Switching of a Vertical-Cavity Semiconductor Laser as a Kramers Hopping Problem, Physical Review Letters, vol.82, issue.24, pp.4815-4818, 1999. ,
DOI : 10.1103/PhysRevLett.82.675
Reaction-rate theory: fifty years after Kramers, Reviews of Modern Physics, vol.35, issue.2, pp.251-341, 1990. ,
DOI : 10.1103/PhysRevB.35.4737
Brownian motion in a field of force and the diffusion model of chemical reactions, Physica, vol.7, issue.4, pp.284-304, 1940. ,
DOI : 10.1016/S0031-8914(40)90098-2
Polarization-mode hopping in single-mode vertical-cavity surface-emitting lasers: Theory and experiment, Physical Review A, vol.4649, issue.1, pp.68-51, 2003. ,
DOI : 10.1117/12.469240
Statistics of polarization competition in VCSELs, Quantum and Semiclassical Optics: Journal of the European Optical Society Part B, vol.10, issue.3, pp.469-476, 1998. ,
DOI : 10.1088/1355-5111/10/3/005
Twofrequency emission and polarization dynamics at lasing threshold in verticalcavity surface-emitting lasers, Phys. Rev. A, issue.033822, pp.68-51, 2003. ,
Polarization-switching influence on the intensity noise of vertical-cavity surface-emitting lasers, Journal of the Optical Society of America B, vol.19, issue.4, pp.672-677, 2002. ,
DOI : 10.1364/JOSAB.19.000672
Optical feedback induces polarization mode hopping in vertical-cavity surface-emitting lasers, Optics Letters, vol.28, issue.17, pp.1543-1545, 2003. ,
DOI : 10.1364/OL.28.001543
Residence time distribution and coherence resonance of optical-feedback-induced polarization mode hopping in vertical-cavity surface-emitting lasers, Physical Review A, vol.97, issue.1, pp.11801-51, 2004. ,
DOI : 10.1073/pnas.040411297
Experimental Investigation of a Bistable System in the Presence of Noise and Delay, Physical Review Letters, vol.10, issue.5, pp.50601-50602, 2004. ,
DOI : 10.1088/1355-5111/10/3/005
Experimental study of polarization switching and polarization mode hopping induced by optical injection in VCSELs, Proceedings Symposium IEEE/LEOS Benelux Chapter, pp.143-146, 2004. ,
Tailoring the birefringence in a vertical???cavity semiconductor laser, Applied Physics Letters, vol.58, issue.24, pp.3635-3637, 1996. ,
DOI : 10.1063/1.117007
Polarization Switching in Quantum-Dot Vertical-Cavity Surface-Emitting Lasers, IEEE Photonics Technology Letters, vol.21, issue.14, pp.1008-1010, 2009. ,
DOI : 10.1109/LPT.2009.2021954
URL : https://hal.archives-ouvertes.fr/hal-00406904
Nonlinear Dynamics and Chaos with Applications to Physics, Biology, Chemistry and Engineering. Perseus Books, vol.62, issue.104, pp.94-135 ,
Global quantitative predictions of complex laser dynamics, Physical Review E, vol.159, issue.4, pp.65-62, 2002. ,
DOI : 10.1016/S0030-4018(98)00584-7
Dynamical Systems in Neuroscience: The Geometry of Excitability and Bursting, pp.63-65, 2007. ,
A unifying view of bifurcations in a semiconductor laser subject to optical injection, Optics Communications, vol.172, issue.1-6, pp.279-295, 1999. ,
DOI : 10.1016/S0030-4018(99)00603-3
Laser with injected signal: perturbation of an invariant circle, Optics Communications, vol.111, issue.1-2, pp.173-190, 1994. ,
DOI : 10.1016/0030-4018(94)90157-0
S??il'nikov-saddle-node interaction near a codimension-2 bifurcation: Laser with injected signal, Physica D: Nonlinear Phenomena, vol.109, issue.3-4, pp.293-314, 1997. ,
DOI : 10.1016/S0167-2789(97)00070-5
Period-doubling cascades and chaos in a semiconductor laser with optical injection, Physical Review A, vol.2, issue.5, pp.4181-4185, 1995. ,
DOI : 10.1364/JOSAB.2.000173
A route to robust double pulse excitability in optically injected semiconductor lasers, Journal of Physics: Conference Series, vol.138, p.66, 2008. ,
DOI : 10.1088/1742-6596/138/1/012014
Effects of noise in excitable systems, Physics Reports, vol.392, issue.6, pp.321-424, 2004. ,
DOI : 10.1016/j.physrep.2003.10.015
Excitability in liquid crystal, Chaos: An Interdisciplinary Journal of Nonlinear Science, vol.21, issue.3, pp.485-489, 1994. ,
DOI : 10.1103/PhysRevE.48.705
In vivo single-cell excitability probing of neuronal ensembles in the intact and awake developing Xenopus brain, Nature Protocols, vol.50, issue.5, pp.841-848, 2010. ,
DOI : 10.1038/nprot.2010.10
Sensitivity of quantum-dot semiconductor lasers to optical feedback, Optics Letters, vol.29, issue.10, pp.1072-1074, 2004. ,
DOI : 10.1364/OL.29.001072
Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain, Applied Physics Letters, vol.73, issue.11, pp.1499-1501, 1998. ,
DOI : 10.1109/68.84492
Experimental investigation of the effect of wetting-layer states on the gain???current characteristic of quantum-dot lasers, Applied Physics Letters, vol.81, issue.26, p.71, 2002. ,
DOI : 10.1103/PhysRevB.54.5604
Time scales and relaxation dynamics in quantum-dot lasers, Physical Review A, vol.2, issue.2, p.72, 2007. ,
DOI : 10.1007/BF01325388
Relaxation characteristics of quantum-dash-based semiconductor lasers, Applied Physics Letters, vol.95, issue.23, p.72, 2009. ,
DOI : 10.1063/1.2957479
Multipulse Excitability in a Semiconductor Laser with Optical Injection, Physical Review Letters, vol.39, issue.6, p.77, 2002. ,
DOI : 10.1007/978-1-4757-2421-9
-homoclinic orbits in optically injected lasers, Nonlinearity, vol.18, issue.3, pp.1095-1120, 2005. ,
DOI : 10.1088/0951-7715/18/3/010
Excitability and self-pulsations near homoclinic bifurcations in semiconductor laser systems, Optics Communications, vol.215, issue.4-6, pp.367-379, 2003. ,
DOI : 10.1016/S0030-4018(02)02239-3
Spontaneously excited pulses in an optically driven semiconductor laser, Physical Review E, vol.39, issue.1, p.77, 2004. ,
DOI : 10.1103/PhysRevE.65.045207
Optically injected quantum-dot lasers, Optics Letters, vol.35, issue.7, pp.937-939, 2010. ,
DOI : 10.1364/OL.35.000937
URL : https://dipot.ulb.ac.be/dspace/bitstream/2013/98308/1/OL35-2010.pdf
General scaling law in the saddlenode bifurcation: a complex phase space study, J. Phys. A: Math. Theor, vol.41, pp.84-94, 2008. ,
Coherence Resonance Near a Hopf Bifurcation, Physical Review Letters, vol.66, issue.12, pp.95-89, 2005. ,
DOI : 10.1142/S0218127400000840
Experimental Evidence of Coherence Resonance in a Time-Delayed Bistable System, Physical Review Letters, vol.28, issue.2, p.89, 2007. ,
DOI : 10.1103/PhysRevE.57.6335
URL : https://hal.archives-ouvertes.fr/hal-00207628
All-optical memory based on the injection locking bistability of a two-color laser diode, Optics Express, vol.17, issue.8, pp.6293-6300, 2009. ,
DOI : 10.1364/OE.17.006293
Self-pulsations and excitability in optically injected quantum dot lasers: impact of the excited states and spontaneous emission noise Optical injection induced polarization bistability in vertical-cavity surface-emitting lasers, Phys. Rev. A Appl. Phys. Lett, vol.82, pp.63-119, 1993. ,
Low-switching-energy and highrepetition-frequency all-optical flip-flop operations of a polarization bistable vertical-cavity surface-emitting laser, Appl. Phys. Lett, vol.88, p.119, 2006. ,
Optical inverter using a vertical-cavity surface-emitting laser with external light injection, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., pp.708-709, 2006. ,
DOI : 10.1109/LEOS.2003.1252997