G. Fero, G. Monteil, H. Vincent, V. Thevenot, M. D. Tran et al., Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization, Journal of Applied Physics, vol.23, issue.8, pp.4691-4740, 1996.
DOI : 10.1016/0039-6028(92)90080-P

Y. H. Seo, K. S. Nahm, K. Ch, H. W. Kim, K. S. Shim et al., Epitaxial Growth of Void Free ?-SiC on Si by the Pyrolysis of Tetramethylsilane, Journal of the Korean Physical Society, vol.33, pp.324-329, 1998.

R. Scholz, U. Gösele, F. Wischmeyer, and E. Niemann, Prevention of micropipes and voids at ??-SiC/Si(100) interfaces, Applied Physics A: Materials Science & Processing, vol.66, issue.1, pp.59-51, 1998.
DOI : 10.1007/s003390050638

J. Scheiner, R. Goldhahn, V. Cimalla, G. Ecke, W. Attenberger et al., Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon, Materials Science and Engineering: B, vol.61, issue.62, pp.61-62526, 1999.
DOI : 10.1016/S0921-5107(98)00466-8

K. C. Kim, C. I. Park, J. I. Roh, S. H. Lee, K. S. Nahm et al., Characterization of 3C-SiC(100) Grown on Si(100) Substrate, Journal of the Korean Institute of Chemical Engineers, vol.38, issue.5, pp.676-682, 2000.

S. Yugo, T. Kanai, T. Kimura, and T. Muto, Generation of diamond nuclei by electric field in plasma chemical vapor deposition, Applied Physics Letters, vol.97, issue.10, pp.1036-54, 1991.
DOI : 10.1557/JMR.1989.0664

X. Jiang and C. Klages, Heteroepitaxial diamond growth on (100) silicon, Diamond and Related Materials, vol.2, issue.5-7, pp.1112-55, 1993.
DOI : 10.1016/0925-9635(93)90282-7

J. Gerber, S. Sattel, K. Jung, H. Ehrhardt, and J. Robertson, Experimental characterisation of bias-enhanced nucleation of diamond on Si, Diamond and Related Materials, vol.4, issue.5-6, pp.559-56, 1995.
DOI : 10.1016/0925-9635(94)05215-8

J. Gerber, S. Sattel, H. Ehrhardt, J. Robertson, P. Wurzinger et al., Investigation of bias enhanced nucleation of diamond on silicon, Journal of Applied Physics, vol.56, issue.8, pp.4388-57, 1996.
DOI : 10.1063/1.102719

M. Schreck, R. Hessmer, S. Geier, B. Rauschenbach, and B. Stritzker, Structural characterization of diamond films grown epitaxially on silicon, Diamond and Related Materials, vol.3, issue.4-6, pp.510-58, 1994.
DOI : 10.1016/0925-9635(94)90213-5

M. Schreck, K. ?. Thürer, R. Klarmann, and B. Stritzker, Influence of the nucleation process on the azimuthal misorientation of heteroepitaxial diamond films on Si(001), Journal of Applied Physics, vol.4, issue.7, pp.3096-59, 1997.
DOI : 10.1063/1.115005

J. C. Arnault, HIGHLY ORIENTED DIAMOND FILMS ON HETEROSUBSTRATES: CURRENT STATE OF THE ART AND REMAINING CHALLENGES, Surface Review and Letters, vol.513, issue.01, pp.127-60, 2003.
DOI : 10.1016/S0039-6028(00)00793-7

N. Ishigaki and S. Yugo, Mechanism of diamond epitaxial growth on silicon, Diamond and Related Materials, vol.9, issue.9-10, pp.1646-61, 2000.
DOI : 10.1016/S0925-9635(00)00291-0

E. Maillard-schaller, O. M. Küttel, P. Gröning, P. Aebi, and L. Schlapbach, Formation of an oriented ??-SiC layer during the initial growth phase of diamond on silicon (100), Diamond and Related Materials, vol.6, issue.2-4, pp.282-62, 1997.
DOI : 10.1016/S0925-9635(96)00734-0

T. Suesada, N. Nakamura, H. Nagasawa, and H. Kawarada, Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via ?? -SiC Buffer Layer, Japanese Journal of Applied Physics, vol.34, issue.Part 1, No. 9A, p.4898, 1995.
DOI : 10.1143/JJAP.34.4898

S. Saada, S. Barrat, and E. Bauer-grosse, Towards homogeneous and reproducible highly oriented diamond films, Diamond and Related Materials, vol.9, issue.3-6, pp.300-64, 2001.
DOI : 10.1016/S0925-9635(99)00334-9

I. Choi, S. Barrat, and E. Bauer-grosse, Quantitative characterization of the true epitaxial ratio in the first stage of the MPCVD diamond synthesis, Diamond and Related Materials, vol.12, issue.3-7, pp.361-65, 2003.
DOI : 10.1016/S0925-9635(02)00239-X

E. Wörner, C. Wild, W. Müller-sebert, R. Locher, and P. Koidl, Thermal conductivity of CVD diamond films: high-precision, temperature-resolved measurements, Diamond and Related Materials, vol.5, issue.6-8, pp.688-692, 1996.
DOI : 10.1016/0925-9635(95)00390-8

J. A. Von-windheim, V. Venkatesan, D. M. Malta, and K. Das, Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements, Diamond and Related Materials, vol.2, issue.5-7, pp.5-7, 1993.
DOI : 10.1016/0925-9635(93)90235-T

X. C. He, H. S. Shen, Z. M. Zhang, X. J. Hu, Y. Z. Wan et al., Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties, Diamond and Related Materials, vol.9, issue.9-10, pp.9-10, 2000.
DOI : 10.1016/S0925-9635(00)00317-4

V. I. Polyakov, A. I. Rukovishnikov, N. M. Rossukanyi, and V. G. Ralchenko, Electrical properties of thick boron and nitrogen contained CVD diamond films, Diamond and Related Materials, vol.10, issue.3-7, pp.3-7, 2001.
DOI : 10.1016/S0925-9635(00)00492-1

B. R. Stoner, S. R. Sahaida, J. P. Bade, P. Southworth, and P. J. Ellis, Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growth, Journal of Materials Research, vol.22, issue.06, pp.1334-1340, 1993.
DOI : 10.1007/BF02652239

J. T. Glass, Presentation of Gorham's conference on CVD diamond and diamond like carbon coating technology, pp.6-8, 1994.

R. Hessmer, M. Schreck, S. Geier, and B. Stritzker, Correlation between breakdown voltage and structural properties of polycrystalline and heteroepitaxial CVD diamond films, Diamond and Related Materials, vol.3, issue.4-6, pp.4-6, 1994.
DOI : 10.1016/0925-9635(94)90307-7

H. Shiomi, Y. Nishibayashi, and N. Fujimori, Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films, Japanese Journal of Applied Physics, vol.28, issue.Part 2, No. 12, pp.2153-2154, 1989.
DOI : 10.1143/JJAP.28.L2153

E. Titus, D. S. Misra, A. K. Sikder, P. K. Tyagi, M. K. Singh et al., Quantitative analysis of hydrogen in chemical vapor deposited diamond films, Diamond and Related Materials, vol.14, issue.3-7, pp.3-7, 2005.
DOI : 10.1016/j.diamond.2004.12.001

N. Bozzolo, S. Barrat, I. Dieguez, and E. Bauer-grosse, Spatial distribution of stacking faults and microtwins in isolated crystals and textured diamond films, Diamond and Related Materials, vol.5, issue.12, pp.1532-44101, 1996.
DOI : 10.1016/S0925-9635(97)80003-9

. D. Th, R. Makris, N. Giorgi, L. Lisi, E. Pilloni et al., Bias enhanced nucleation of diamond on Si(100) in a vertical straight hot filament CVD, Diamond and Related Materials, vol.14, issue.3, pp.318-331, 2005.

F. Arezzo, N. Zacchetti, and W. Zhu, X???ray photoelectron spectroscopy study of substrate surface pretreatments for diamond nucleation, Journal of Applied Physics, vol.18, issue.10, pp.5375-5389, 1994.
DOI : 10.1063/1.101708

J. Filik, P. W. May, S. R. Pearce, R. K. Wild, and K. R. Hallam, XPS and laser Raman analysis of hydrogenated amorphous carbon films, Diamond and Related Materials, vol.12, issue.3-7, pp.974-989, 2003.
DOI : 10.1016/S0925-9635(02)00374-6

J. Luo and W. Lin, Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing, Applied Physics Letters, vol.141, issue.7, pp.916-932, 1996.
DOI : 10.1063/1.116942

P. Mahalingam and D. S. Dandy, A quasi-equilibrium model for the prediction of interlayer chemistry during diamond chemical vapor deposition, Thin Solid Films, vol.322, issue.1-2, pp.108-125, 1998.
DOI : 10.1016/S0040-6090(97)00966-8

I. Pinter, P. Petrik, E. Szilagyi, S. Katai, and P. Deak, Characterization of nucleation and growth of MW-CVD diamond films by spectroscopic ellipsometry and ion beam analysis methods, Diamond and Related Materials, vol.6, issue.11, pp.1633-1651, 1997.
DOI : 10.1016/S0925-9635(97)00029-0

R. Stöckel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen et al., Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films, Journal of Applied Physics, vol.65, issue.2, pp.768-787, 1996.
DOI : 10.1063/1.112538

S. Saada, J. C. Arnault, N. Tranchant, M. Bonnauron, and P. Bergonzo, Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on silicon, physica status solidi (a), vol.64, issue.9, pp.2854-2874, 2007.
DOI : 10.1002/pssa.200776339

J. Wei, J. Ahn, and C. L. Hing, Investigation of Pretreated Silicon Wafers for CVD Growth of Diamond Film, Crystal Research and Technology, vol.2, issue.40, p.441, 1998.
DOI : 10.1016/0925-9635(93)90014-S

H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel, Anisotropic Etching of Crystalline Silicon in Alkaline Solutions, Journal of The Electrochemical Society, vol.137, issue.11, pp.3612-3634, 1990.
DOI : 10.1149/1.2086277

W. N. Borle and R. K. Bagai, Dislocation etch pits on various crystal planes of silicon, Journal of Crystal Growth, vol.36, issue.2, pp.259-282, 1976.
DOI : 10.1016/0022-0248(76)90286-4

J. C. Arnault, S. Hubert, and F. L. Normand, Silicon Etching during the HFCVD Diamond Growth, The Journal of Physical Chemistry B, vol.102, issue.25, pp.4856-4880, 1998.
DOI : 10.1021/jp9809742

G. Ferro, Y. Monteil, H. Vincent, V. Thevenot, M. D. Tran et al., Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization, Journal of Applied Physics, vol.23, issue.8, pp.4691-4716, 1996.
DOI : 10.1016/0039-6028(92)90080-P

V. Papaioannou, J. Stoemenos, K. Zekentes, and B. Pecz, Early stages of growth of ?-SiC on Si by MBE, Journal of Crystal Growth, vol.157, issue.1, pp.392-418, 1995.

G. Ferro, Y. Monteil, H. Vincent, J. Cauwet, P. Bouix et al., Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition, Thin Solid Films, vol.278, issue.1-2, pp.22-27, 1996.
DOI : 10.1016/0040-6090(95)08034-1

Y. Sun, T. Miyasato, and N. Sonoda, Outdiffusion of the excess carbon in SiC films into Si substrate during film growth, Journal of Applied Physics, vol.84, issue.11, pp.6451-6479, 1998.
DOI : 10.1063/1.106655

J. Wei, J. Ahn, and C. L. Hing, Investigation of Pretreated Silicon Wafers for CVD Growth of Diamond Film, Crystal Research and Technology, vol.2, issue.40, pp.441-470, 1998.
DOI : 10.1016/0925-9635(93)90014-S

A. Schaefer, Initial stages in the carbonization of (111) Si by solid-source molecular beam epitaxy, Applied physics letters, vol.73, issue.24, pp.3542-3572, 1998.

S. S. Iyer, K. Ebert, M. S. Goorsky, F. K. Le-goues, J. C. Tsang et al., alloys by molecular beam epitaxy, Applied Physics Letters, vol.97, issue.3, pp.356-387, 1992.
DOI : 10.1063/1.106083

. Pezoldt, Investigation of the nucleation and growth of SiC nanostructures on Si, Thin Solid Films, vol.380, issue.1, pp.92-124, 2000.

F. Bozso, J. T. Yates, W. J. Choyke, and L. Muehlhoff, Studies of SiC formation on Si (100) by chemical vapor deposition, Journal of Applied Physics, vol.9, issue.8, pp.2771-2804, 1985.
DOI : 10.1016/0368-2048(76)81022-5

A. J. Pidduck, D. J. Robbins, I. M. Young, A. G. Cullis, and A. R. Martin, The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature, Materials Science and Engineering: B, vol.4, issue.1-4, pp.417-451, 1989.
DOI : 10.1016/0921-5107(89)90280-8

W. Li and A. J. Steckl, AFM Study of Nucleation and Void Formation in SiC Carbonization of Si, MRS Proceedings, vol.280, pp.739-774, 1993.
DOI : 10.1063/1.94820

K. C. Kim, C. I. Park, J. I. Roh, K. S. Nahm, and Y. H. Seo, Formation mechanism of interfacial voids in the growth of SiC films on Si substrates, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.19, issue.5, pp.2636-2672, 2001.
DOI : 10.1116/1.1399321

J. C. Arnault, HIGHLY ORIENTED DIAMOND FILMS ON HETEROSUBSTRATES: CURRENT STATE OF THE ART AND REMAINING CHALLENGES, Surface Review and Letters, vol.513, issue.01, pp.127-164, 2003.
DOI : 10.1016/S0039-6028(00)00793-7

Y. H. Seo, K. S. Nahm, K. C. Kim, H. W. Shim, E. K. Suh et al., Epitaxial Growth of Void Free ?-SiC on Si by the Pyrolysis of Tetramethylsilane, Journal of the Korean Physical Society, vol.33, pp.324-362, 1998.

L. Rimai, R. Ager, W. H. Weber, J. Hangas, A. Samman et al., Deposition of epitaxially oriented films of cubic silicon carbide on silicon by laser ablation: Microstructure of the silicon???silicon??? carbide interface, Journal of Applied Physics, vol.65, issue.12, pp.6601-6640, 1995.
DOI : 10.1002/pssb.2220510107

R. Scholz, U. Gösele, E. Niemann, and F. Wischmeyer, Micropipes and voids at ????SiC/Si(100) interfaces: an electron microscopy study, Applied Physics A: Materials Science & Processing, vol.64, issue.2, pp.115-155, 1997.
DOI : 10.1007/s003390050452

A. Chassagne and . Leycuras, Behaviour of the 3C-SiC(100) c(2×2) (C-terminated) and 3×2 (Si-rich) surface reconstructions upon initial H 2 /CH 4 microwave plasma exposures, Physica Status Solidi. A, vol.202, pp.2234-2276, 2005.

V. Cimalla, W. Attenberger, J. K. Lindner, B. Stritzker, and J. Pezoldt, Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si, Materials Science Forum, vol.338, issue.342, pp.285-328, 2000.
DOI : 10.4028/www.scientific.net/MSF.338-342.285

A. Gupta and C. Jacob, Unusual defects in silicon carbide thin films grown by multiple or interrupted growth technique, Microelectronic Engineering, vol.83, issue.1, pp.5-44, 2006.
DOI : 10.1016/j.mee.2005.10.013

J. Jinschek, U. Kaiser, and W. Richter, Different void shapes in Si at the SiC thin film/Si(111) substrate interface, Journal of Electron Microscopy, vol.50, issue.1, pp.3-45, 2001.
DOI : 10.1093/jmicro/50.1.3

J. Yan and L. Chang, Chemical vapour deposition of oriented diamond nanocrystallites by a bias-enhanced nucleation method, Nanotechnology, vol.17, issue.22, pp.5544-5590, 2006.
DOI : 10.1088/0957-4484/17/22/003

N. Bécourt, B. Cros, J. L. Ponthenier, R. Berjoan, A. M. Papon et al., Characterization of the buffer layer in SiC heteroepitaxy, Applied Surface Science, vol.68, issue.4, pp.461-508, 1993.
DOI : 10.1016/0169-4332(93)90227-3

C. Pearson, M. Krueger, and E. Ganz, Direct Tests of Microscopic Growth Models using Hot Scanning Tunneling Microscopy Movies, Physical Review Letters, vol.75, issue.13, pp.2306-2355, 1996.
DOI : 10.1103/PhysRevLett.75.101

Y. Ishida, T. Takahashi, H. Okumura, T. Sekigawa, and S. Yoshida, Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation, Japanese Journal of Applied Physics, vol.38, issue.Part 1, No. 6A, pp.3470-50, 1999.
DOI : 10.1143/JJAP.38.3470

I. Gouzman, B. Fisgeer, Y. Avigal, A. Hoffman, and R. Kalish, The chemical nature of the carbon precursor in bias-enhanced nucleation of CVD diamond, Diamond and Related Materials, vol.6, issue.2-4, pp.526-51, 1997.
DOI : 10.1016/S0925-9635(96)00702-9

. Lux, Pretreatment of silicon substrates for CVD diamond deposition studied by atomic force microscopy, Applied Surface Science, vol.84, pp.133-52, 1995.

G. Sanchez, M. C. Polo, W. Wang, J. Esteve, J. Servat et al., Atomic force microscopy observation of the first stages of diamond growth on silicon, Diamond and Related Materials, vol.5, issue.6-8, pp.592-53, 1996.
DOI : 10.1016/0925-9635(95)00459-9

G. Morell, I. M. Vargas, J. Y. Manso, J. R. Guzmán, and B. R. Weiner, In situ phase-modulated ellipsometry study of the surface damaging process of silicon under atomic hydrogen, Solid State Communications, vol.116, issue.4, pp.217-54, 2000.
DOI : 10.1016/S0038-1098(00)00289-1

S. Saada, Synthèse de films de diamant hautement orientés sur silicium {100} par dépôt chimique en phase vapeur assisté par plasma micro-ondes

E. Maillard-schaller, O. M. Küttel, P. Gröning, O. Gröning, R. G. Agostino et al., Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure, Physical Review B, vol.22, issue.23, pp.15895-56, 1997.
DOI : 10.1016/0925-9635(94)05313-8

X. Jiang, K. Schiffmann, A. Westphal, and C. Klages, Atomic???force???microscopic study of heteroepitaxial diamond nucleation on (100) silicon, Applied Physics Letters, vol.60, issue.9, pp.1203-57, 1993.
DOI : 10.1016/0042-207X(88)90004-8

Y. Hayashi, Y. Matsushita, T. Soga, M. Umeno, and T. Jimbo, Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation, Journal of Applied Physics, vol.82, issue.291, pp.9752-58, 2002.
DOI : 10.1063/1.365995

Y. Wei, L. Li, and I. S. Tsong, Etching of Si(111)???(7??7) and Si(100)???(2??1) surfaces by atomic hydrogen, Applied Physics Letters, vol.50, issue.14, pp.1818-59, 1995.
DOI : 10.1063/1.113332

B. M. Gallois, T. M. Besmann, and M. W. Stott, Chemical Etching of Silicon (100) by Hydrogen, Journal of the American Ceramic Society, vol.89, issue.9, pp.2949-60, 1994.
DOI : 10.1557/PROC-148-229

Y. Hayashi, Y. Matsushita, T. Soga, M. Umeno, and T. Jimbo, Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation, Journal of Applied Physics, vol.82, issue.291, pp.9752-61, 2002.
DOI : 10.1063/1.365995

J. D. Hong, R. F. Davis, and D. E. Newbury, Self-diffusion of silicon-30 in ?-SiC single crystals, Journal of Materials Science, vol.25, issue.9, pp.2485-63, 1981.
DOI : 10.1007/BF01113585

F. Bozso, J. T. Yates-jr, W. J. Choyke, and L. Muehlhoff, Studies of SiC formation on Si (100) by chemical vapor deposition, Journal of Applied Physics, vol.9, issue.8, pp.2771-64, 1985.
DOI : 10.1016/0368-2048(76)81022-5

C. D. Stinespring and J. C. Wormhoudt, Surface studies relevant to silicon carbide chemical vapor deposition, Journal of Applied Physics, vol.26, issue.4, pp.1733-65, 1989.
DOI : 10.1016/0039-6028(72)90005-2

J. Yun and D. S. Dandy, A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition, Diamond and Related Materials, vol.14, issue.8, pp.1377-66, 2005.
DOI : 10.1016/j.diamond.2005.02.008

B. R. Huang and W. Z. Ke, The surface properties on both sides of the isolated diamond film, Materials Science and Engineering: B, vol.64, issue.3, pp.187-67, 1999.
DOI : 10.1016/S0921-5107(99)00170-1

P. Reinke, G. Francz, and P. Oelhafen, Structural phase transitions of carbon observed with photoelectron spectroscopy, Thin Solid Films, vol.290, issue.291, pp.148-68, 1996.
DOI : 10.1016/S0040-6090(96)09095-5

R. Shima-edelstein, I. Gouzman, M. Folman, A. Hoffman, and S. Rotter, Surface carbon saturation as a means of CVD diamond nucleation enhancement, Diamond and Related Materials, vol.8, issue.2-5, pp.139-69, 1999.
DOI : 10.1016/S0925-9635(98)00261-1

J. C. Angus and C. C. Hayman, Low-Pressure, Metastable Growth of Diamond and "Diamondlike" Phases, Science, vol.241, issue.4868, pp.913-70, 1988.
DOI : 10.1126/science.241.4868.913

T. Lina, K. P. Loh, A. T. Wee, Z. X. Shen, J. Lin et al., High resolution transmission electron microscopy study of the initial growth of diamond on silicon, Diamond and Related Materials, vol.9, issue.9-10, pp.9-10, 2000.
DOI : 10.1016/S0925-9635(00)00303-4

Y. Lifshitz, X. M. Meng, S. T. Lee, R. Akhveldiany, and A. Hoffman, Visualization of Diamond Nucleation and Growth from Energetic Species, Physical Review Letters, vol.21, issue.5, pp.56101-72, 2004.
DOI : 10.1016/S0040-6090(00)00769-0

. Boher, Thermal stability of amorphous carbon films deposited by pulsed laser ablation, Applied Physics A, vol.71, issue.433, p.73, 2000.
URL : https://hal.archives-ouvertes.fr/hal-00610873

A. Guise, S. Barrat, and E. Bauer-grosse, Quantitative study of epitaxial CVD diamond deposits: Correlations between nucleation parameters and experimental conditions, Diamond and Related Materials, vol.16, issue.4-7, pp.695-74, 2007.
DOI : 10.1016/j.diamond.2006.12.023

Y. Ma, T. Tsurumi, N. Shinoda, and O. Fukunaga, Effect of bias enhanced nucleation on the nucleation density of diamond in microwave plasma CVD, Diamond and Related Materials, vol.4, issue.12, pp.1325-75, 1995.
DOI : 10.1016/0925-9635(95)00320-7

J. Gerber, S. Sattel, H. Ehrhardt, J. Robertson, P. Wurzinger et al., Investigation of bias enhanced nucleation of diamond on silicon, Journal of Applied Physics, vol.56, issue.8, pp.4388-76, 1996.
DOI : 10.1063/1.102719

D. Wittorf, W. Jäger, C. Dieker, A. Flöter, and H. Güttler, Electron microscopy of interfaces in chemical vapour deposition diamond films on silicon, Diamond and Related Materials, vol.9, issue.9-10, pp.9-10, 2000.
DOI : 10.1016/S0925-9635(00)00300-9

K. Zekentes, V. Papaioannou, B. Pecz, J. Stoemenos, and C. Diamant, Early stages of growth of ??-SiC on Si by MBE, Journal of Crystal Growth, vol.157, issue.1-4, pp.392-399, 1995.
DOI : 10.1016/0022-0248(95)00330-4

I. Figure, Projections stéréographiques des plans {100} des domaines en position de macle a) macles d'ordre 1 b) macles d'ordre 2 c) macles d'ordre 3 d) macles d'ordre 4

E. Maillard-schaller, O. M. Küttel, P. Gröning, P. Aebi, and L. Schlapbach, Formation of an oriented ??-SiC layer during the initial growth phase of diamond on silicon (100), Diamond and Related Materials, vol.6, issue.2-4, p.282, 1997.
DOI : 10.1016/S0925-9635(96)00734-0

M. Schreck, K. H. Thürer, C. Christensen, M. Müller, and B. Stritzker, Effect of oxygen on the bias-enhanced nucleation of diamond on silicon, Diamond and Related Materials, vol.8, issue.2-5, p.160, 1999.
DOI : 10.1016/S0925-9635(98)00301-X

S. Saada, S. Barrat, and E. Bauer-grosse, Silicon substrate preparation for epitaxial diamond crystals, Diamond and Related Materials, vol.10, issue.3-7, p.300, 2001.
DOI : 10.1016/S0925-9635(00)00570-7

A. Bergmaier, M. Schreck, G. Dollinger, O. Schmelmer, K. H. Thurer et al., Oxygen at the interface of CVD diamond films on silicon, Diamond and Related Materials, vol.8, issue.6, p.1142, 1999.
DOI : 10.1016/S0925-9635(99)00104-1

D. G. Jeng, H. S. Tuan, R. F. Salat, and G. J. Fricano, Oriented cubic nucleations and local epitaxy during diamond growth on silicon {100} substrates, Applied Physics Letters, vol.53, issue.20, p.1968, 1990.
DOI : 10.1049/el:19890818

B. E. Williams, J. T. Glass, R. F. Davis, and K. Kobashi, The analysis of defect structures and substrate/film interfaces of diamond thin films, Journal of Crystal Growth, vol.99, issue.1-4, pp.1168-1175, 1990.
DOI : 10.1016/S0022-0248(08)80102-9

B. R. Stoner and J. T. Glass, Textured diamond growth on (100) ?????SiC via microwave plasma chemical vapor deposition, Applied Physics Letters, vol.39, issue.6, p.698, 1992.
DOI : 10.1116/1.577029

T. Suesada, N. Nakamura, H. Nagasawa, and H. Kawarada, Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via ?? -SiC Buffer Layer, Japanese Journal of Applied Physics, vol.34, issue.Part 1, No. 9A, pp.4898-4907, 1995.
DOI : 10.1143/JJAP.34.4898

X. Jiang and C. Klages, Recent Developments in Heteroepitaxial Nucleation and Growth of Diamond on Silicon, Physica Status Solidi (a), vol.3, issue.4, pp.175-185, 1996.
DOI : 10.1002/pssa.2211540114

J. Plitzko, M. Rösler, and K. G. Nickel, Heteroepitaxial growth of diamond thin films on silicon: information transfer by epitaxial tilting, Diamond and Related Materials, vol.6, issue.8, pp.935-939, 1997.
DOI : 10.1016/S0925-9635(97)00004-6

. Pezoldt, Investigation of the nucleation and growth of SiC nanostructures on Si, Thin Solid Films, vol.380, issue.12, pp.92-104, 2000.

D. Wittorf, W. Jager, C. Dieker, A. Floter, and H. Guttler, Electron microscopy of interfaces in chemical vapour deposition diamond films on silicon, Diamond and Related Materials, vol.9, issue.9-10, pp.1696-1709, 2000.
DOI : 10.1016/S0925-9635(00)00300-9

J. Yan and L. Chang, Chemical vapor deposition of uniform and high-quality diamond films by bias-enhanced nucleation method, Thin Solid Films, vol.498, issue.1-2, pp.230-234, 2006.
DOI : 10.1016/j.tsf.2005.07.097

J. Yan and L. Chang, Microwave plasma chemical vapor deposition of cone like structure of diamond, Diamond and Related Materials, vol.14, issue.100, pp.11-12, 2005.

J. Yan and L. Chang, Chemical vapour deposition of oriented diamond nanocrystallites by a bias-enhanced nucleation method, Nanotechnology, vol.17, issue.22, pp.5544-5560, 2006.
DOI : 10.1088/0957-4484/17/22/003

S. Saada, S. Barrat, and E. Bauer-grosse, Silicon substrate preparation for epitaxial diamond crystals, Diamond and Related Materials, vol.10, issue.3-7, pp.300-317, 2001.
DOI : 10.1016/S0925-9635(00)00570-7

X. Jiang and C. L. Jia, Direct Local Epitaxy of Diamond on Si(100) and Surface-Roughening-Induced Crystal Misorientation, Physical Review Letters, vol.58, issue.16, pp.3658-3676, 2000.
DOI : 10.1063/1.117066

M. Schreck, K. ?. Thürer, R. Klarmann, and B. Stritzker, Influence of the nucleation process on the azimuthal misorientation of heteroepitaxial diamond films on Si(001), Journal of Applied Physics, vol.4, issue.7
DOI : 10.1063/1.115005

S. Barrat, S. Saada, J. M. Thiebaut, and E. Bauer-grosse, Synthesis of highly oriented CVD diamond films by ultra short bias enhanced nucleation step, Diamond and Related Materials, vol.10, issue.9-10, pp.1637-1657, 2001.
DOI : 10.1016/S0925-9635(01)00445-9

T. Suesada, N. Nakamura, H. Nagasawa, and H. Kawarada, Initial Growth of Heteroepitaxial Diamond on Si(001) Substrates via ?? -SiC Buffer Layer, Japanese Journal of Applied Physics, vol.34, issue.Part 1, No. 9A
DOI : 10.1143/JJAP.34.4898

M. Schreck, C. Grunick, C. Haug, R. Brenn, and B. Stritzker, Bias assisted growth on diamond single crystals: the defect formation due to ion bombardment studied by ion channelling, electron backscatter diffraction, and micro-Raman spectroscopy, Diamond and Related Materials, vol.11, issue.3-6, pp.487-509, 2002.
DOI : 10.1016/S0925-9635(01)00546-5

X. Jiang, W. J. Zhang, and C. Klages, Effects of ion bombardment on the nucleation and growth of diamond films, Physical Review B, vol.66, issue.11, pp.7064-7087, 1998.
DOI : 10.1063/1.114020

J. Gerber, S. Sattel, H. Ehrhardt, J. Robertson, P. Wurzinger et al., Investigation of bias enhanced nucleation of diamond on silicon, Journal of Applied Physics, vol.56, issue.8, pp.4388-4412, 1996.
DOI : 10.1063/1.102719

X. Jiang, R. Six, C. P. Klages, R. Zachai, M. Hartweg et al., The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition process, Diamond and Related Materials, vol.2, issue.2-4, pp.407-432, 1993.
DOI : 10.1016/0925-9635(93)90092-G

Y. Ma, T. Tsurumi, N. Shinoda, and O. Fukunaga, Effect of bias enhanced nucleation on the nucleation density of diamond in microwave plasma CVD, Diamond and Related Materials, vol.4, issue.12, pp.1325-1351, 1995.
DOI : 10.1016/0925-9635(95)00320-7

J. Robertson, J. Gerber, S. Sattel, M. Weiler, K. Jung et al., Mechanism of bias???enhanced nucleation of diamond on Si, Applied Physics Letters, vol.364, issue.24, pp.3287-3314, 1995.
DOI : 10.1063/1.113732

K. , ?. H. Thürer, M. Schreck, and B. Stritzker, Limiting processes for diamond epitaxial alignment on silicon, Physical Review B, vol.57, issue.24, pp.15454-15482, 1998.

S. Barrat, S. Saada, I. Dieguez, and E. Bauer-grosse, Diamond deposition by chemical vapor deposition process: Study of the bias enhanced nucleation step, Journal of Applied Physics, vol.318, issue.4, pp.1870-1899, 1998.
DOI : 10.1016/0921-4526(93)90290-M

K. Kudo, M. Toyofuku, and S. Ogi, Influence of Applying Bias Voltage on Diamond Nucleation while Changing the Experimental Condition, Japanese Journal of Applied Physics, vol.43, issue.10, pp.7228-7258, 2004.
DOI : 10.1143/JJAP.43.7228

R. Beckmann, B. Sobisch, W. Kulisch, and C. Rau, Investigation of the bias nucleation process in microwave plasma-enhanced chemical vapour deposition of diamond, Diamond and Related Materials, vol.3, issue.4-6, pp.555-586, 1994.
DOI : 10.1016/0925-9635(94)90223-2

C. Sun, W. J. Zhang, N. Wang, C. Y. Chan, I. Bello et al., Crystal morphology and phase purity of diamond crystallites during bias enhanced nucleation and initial growth stages, Journal of Applied Physics, vol.5, issue.6, pp.3354-3386, 2000.
DOI : 10.1103/PhysRevB.58.7064

M. Schreck, K. Thürer, R. Klarmann, and B. Stritzker, Influence of the nucleation process on the azimuthal misorientation of heteroepitaxial diamond films on Si(001), Journal of Applied Physics, vol.4, issue.7
DOI : 10.1063/1.115005

S. Yugo, K. Semoto, K. Hoshina, T. Kimura, and H. Nakai, A modelling of diamond nucleation, Diamond and Related Materials, vol.4, issue.7, pp.903-937, 1995.
DOI : 10.1016/0925-9635(94)00245-2

R. Saito, J. Sano, N. Ishigaki, T. Kimura, and S. Yugo, Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition, Journal of Applied Physics, vol.8, issue.5, pp.2559-2594, 2001.
DOI : 10.1016/S0925-9635(96)00702-9

B. B. Wang, W. L. Wang, and K. J. Liao, Theoretical analysis of ion bombardment roles in the bias-enhanced nucleation process of CVD diamond, Diamond and Related Materials, vol.10, issue.9-10, pp.1622-1658, 2001.
DOI : 10.1016/S0925-9635(01)00435-6

S. Katai, Z. Tass, G. Hars, and P. Deak, Measurement of ion energy distributions in the bias enhanced nucleation of chemical vapor deposited diamond, Journal of Applied Physics, vol.4, issue.10, pp.5549-5586, 1999.
DOI : 10.1063/1.114732

S. Sattel, J. Gerber, and H. Ehrhardt, Ion Induced Nucleation of Diamond, Physica Status Solidi (a), vol.145, issue.1, pp.141-179, 1996.
DOI : 10.1116/1.575257

S. Katai, A. Kovats, I. Maros, and P. Deak, Ion energy distributions and their evolution during bias-enhanced nucleation of chemical vapor deposition of diamond, Diamond and Related Materials, vol.9, issue.3-6, pp.317-356, 2000.
DOI : 10.1016/S0925-9635(99)00216-2

L. Chang, C. J. Chen, F. R. Chen, S. F. Hu, and T. S. Lin, The effect of substrate position on the orientation and interfacial reaction of epitaxial diamond on silicon, Diamond and Related Materials, vol.5, issue.3-5, pp.3-5, 1996.
DOI : 10.1016/0925-9635(95)00356-8

S. T. Lee, Y. W. Lam, Z. Lin, Y. Chen, and Q. Chen, Pressure effect on diamond nucleation in a hot-filament CVD system, Physical Review B, vol.75, issue.23, pp.15937-15979, 1997.
DOI : 10.1063/1.355744

X. Jiang, M. Fryda, and C. L. Jia, High quality heteroepitaxial diamond films on silicon: recent progresses, Diamond and Related Materials, vol.9, issue.9-10, pp.1640-1683, 2000.
DOI : 10.1016/S0925-9635(00)00326-5

S. B. Abu-suilik, D. Shimamoto, H. Kitagawa, K. Hasezaki, and Y. Noda, Experimental study of nucleation and quality of CVD diamond adopting two-step deposition approach using MPECVD, Diamond and Related Materials, vol.15, issue.10, pp.1765-1809, 2006.
DOI : 10.1016/j.diamond.2006.03.009

P. Reinke, P. Kania, P. Oelhafen, and R. Guggenheim, Investigation of the nucleation mechanism in bias???enhanced diamond deposition, Applied Physics Letters, vol.3, issue.1, pp.22-47, 1996.
DOI : 10.1063/1.116743

M. C. Mc-master, W. L. Hsu, M. E. Coltrin, D. S. Dandy, and C. Fox, Dependence of the gas composition in a microwave plasma-assisted diamond chemical vapor deposition reactor on the inlet carbon source: CH4 versus C2H2, Diamond and Related Materials, vol.4, issue.7, pp.1000-1008, 1995.
DOI : 10.1016/0925-9635(95)00270-7

S. Schwarz, C. Rottmair, J. Hirmke, S. Rosiwal, and R. F. Singer, CVD-diamond single-crystal growth, Journal of Crystal Growth, vol.271, issue.3-4, pp.425-434, 2004.
DOI : 10.1016/j.jcrysgro.2004.08.003

S. Saada, J. C. Arnault, N. Tranchant, M. Bonnauron, and P. Bergonzo, Study of the CVD process sequences for an improved control of the Bias Enhanced Nucleation step on silicon, physica status solidi (a), vol.64, issue.9, pp.2854-2859, 2007.
DOI : 10.1002/pssa.200776339

. Sz, Z. Katai, . Tass, . Gy, P. Hars et al., Measurement of ion energy distributions in the bias enhanced nucleation of chemical vapor deposited diamond, Journal of Applied Physics, vol.86, issue.10, pp.5549-51, 1999.

Y. K. Kim, Y. S. Han, and J. Y. Lee, The effects of a negative bias on the nucleation of oriented diamond on Si, Diamond and Related Materials, vol.7, issue.1, pp.96-105, 1998.
DOI : 10.1016/S0925-9635(97)00195-7

A. Gicquel and «. , Le génie des procédés au service de l'élaboration de films polycristallins de diamant » De la physique à la technologie, pp.113-120, 1996.

D. S. Dandy and M. E. Coltrin, Deposition Chemistry: deposition pathways, nucleation, and growth " Diamond Thin Film Handbook, p.54, 2002.

L. Vandenbulcke, P. Bou, and G. Moreau, On the Control of Diamond Deposition Structure and Morphology, Journal of The Electrochemical Society, vol.138, issue.10, p.2985, 1991.
DOI : 10.1149/1.2085353

F. Silva, A. Gicquel, A. Tardieu, P. Cledat, . Th et al., Control of an MPACVD reactor for polycrystalline textured diamond films synthesis: role of microwave power density, Diamond and Related Materials, vol.5, issue.3-5, pp.338-56, 1996.
DOI : 10.1016/0925-9635(95)00428-9

E. Maillard-schaller, O. M. Küttel, P. Gröning, O. Gröning, R. G. Agostino et al., Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure, Physical Review B, vol.22, issue.23, pp.15895-57, 1997.
DOI : 10.1016/0925-9635(94)05313-8

H. S. Kim, Y. J. Park, I. H. Choi, and Y. J. , ??-SiC Thin film growth using microwave plasma activated CH4-SiH4 sources, Thin Solid Films, vol.341, issue.1-2, pp.42-58, 1999.
DOI : 10.1016/S0040-6090(98)01538-7

J. C. Arnault, S. Saada, S. Delclos, L. Intiso, N. Tranchant et al., In situ study of the initial stages of diamond deposition on 3C???SiC (100) surfaces: Towards the mechanisms of diamond nucleation, Diamond and Related Materials, vol.16, issue.4-7, pp.4-7690, 2007.
DOI : 10.1016/j.diamond.2006.12.036

X. Jiang and C. L. Jia, Diamond epitaxy on (001) silicon: An interface investigation, Applied Physics Letters, vol.63, issue.9, pp.1197-60, 1995.
DOI : 10.1063/1.115005

C. L. Jia, K. Urban, and X. Jiang, Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substrate, Physical Review B, vol.312, issue.7, pp.5164-61, 1995.
DOI : 10.1016/0039-6028(94)90820-6

S. Geier, M. Schreck, R. Hessmer, B. Rauschenbach, B. Stritzker et al., Characterization of the near???interface region of chemical vapor deposited diamond films on silicon by backscatter Kikuchi diffraction, Applied Physics Letters, vol.20, issue.14, pp.1781-62, 1994.
DOI : 10.4153/CJM-1958-010-0

R. Yoda, A. Nakaue, T. Onishi, and T. Tachibana, Orientation analysis of thin films with FESEM/EBSP technique, Kobe Steel Engineerings Reports, vol.52, issue.2, pp.66-63, 2002.

H. Chen and V. Rudolph, The 3-D structure of polycrystalline diamond film by electron backscattering diffraction (EBSD), Diamond and Related Materials, vol.12, issue.10-11, pp.1639-64, 2003.
DOI : 10.1016/S0925-9635(03)00187-0

S. Barrat, P. Pigeat, I. Dieguez, E. Bauer-grosse, and B. Weber, Initial growth phase of diamond thin films observed by thermal emission spectrometry, Thin Solid Films, vol.304, issue.1-2, pp.98-65, 1997.
DOI : 10.1016/S0040-6090(97)00171-5

J. Pezoldt, V. Cimalla, T. Stauden, G. Eichhorn, G. Ecke et al., Chemical conversion of Si to SiC by solid source MBE and RTCVD, Diamond and Related Materials, vol.6, issue.10, pp.1311-1315, 1997.
DOI : 10.1016/S0925-9635(97)00087-3

F. X. Lu, G. S. Jiang, B. X. Yang, J. Chen, J. J. Wang et al., X-Ray study of the interface layer between low temperature deposited diamond film and the silicon substrate, Diamond and Related Materials, vol.2, issue.2-4, pp.575-67, 1993.
DOI : 10.1016/0925-9635(93)90124-K

E. Maillard-schaller, O. M. Küttel, P. Gröning, P. Aebi, and L. Schlapbach, Formation of an oriented ??-SiC layer during the initial growth phase of diamond on silicon (100), Diamond and Related Materials, vol.6, issue.2-4, pp.282-68, 1997.
DOI : 10.1016/S0925-9635(96)00734-0

N. Jiang, B. W. Sun, Z. Zhang, and Z. Lin, Nucleation and initial growth of diamond film on Si substrate, Journal of Materials Research, vol.69, issue.10, pp.2695-69, 1994.
DOI : 10.1557/JMR.1994.2695

L. Chang, J. E. Yan, F. R. Chen, and J. J. Kai, Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition, Diamond and Related Materials, vol.9, issue.3-6, pp.3-6, 2000.
DOI : 10.1016/S0925-9635(99)00333-7

B. A. Fox, B. R. Stoner, D. M. Malta, P. J. Ellis, R. C. Glass et al., Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon, Diamond and Related Materials, vol.3, issue.4-6, pp.382-71, 1994.
DOI : 10.1016/0925-9635(94)90189-9

R. Q. Zhang, W. J. Zhang, C. Sun, X. Jiang, and S. Lee, Theoretical study on misoriented diamond nucleations on Si(001) surface, Diamond and Related Materials, vol.8, issue.8-9, pp.1418-72, 1999.
DOI : 10.1016/S0925-9635(99)00058-8

H. Yujie, T. Aoyama, A. Ichimiya, Y. Hisada, and S. Mukainakano, The (?3 x ?3)R30° reconstruction on hexagonal 6H-SiC(0001) surface with and without a Si flux, Surface Science, vol.493, issue.1-3, pp.238-245, 2001.