FeO se produira d'autant plus lentement que la température est élevée. Les expériences de U. HELMERSON et al (99) ont permis de mieux comprendre l'effet de la température sur la composition de la couche d'oxyde formée sur des aciers rapides. Dans une enceinte en présence d'une pression résiduelle d'oxygène (P = 6, ils ont obtenu un minimum du rapport 0/ Fe (mesuré par AES in situ) pour une température des substrats de 450, pp.2-7 ,
Theeffect ofoxygen and substrate temperature on the growth of Ti thin films on stainless-steel substrates, J. Vae. ScL TechnoL A, issue.3, pp.2-301, 1983. ,
Application of thin films in silicon de vice technology, Thin Solid Films, issue.4, pp.93-397, 1982. ,
Thin Solid FilmsPreparation of titanium nittide onto molybdenum, stainless steel and carbon by gaz absorption and reactive sputtering, J. ofNuclear Materials, vol.87, issue.103, pp.34-40, 1981. ,
Zurleistungsfahigkeit TiN. Beschichterer RSS~ spiralboherPerformance evaluation of TiN and TiClfiN coated drills, 10·, pp.14-235, 1982. ,
TiN coatings on steel, TiN coatings on steU, pp.265-270, 1981. ,
DOI : 10.1016/0040-6090(81)90233-9
revêtements de nitrure de titane par procédé PVD; dépôt physique en phase vapeur généré par un arc, pp.19-23, 1984. ,
Stand und perspektive bei der chemischen und physikaischen abscheidung von hartstoffen auf hartmetallen (12) K. HABIG, il Chemical vapor deposition and physical vapor deposition coatings : propenies, tribologie al behavior and applications, Proc. of the lOÙlPlansee-seminar, pp.411-455, 1981. ,
Plasma-induced and plasma-assisted chemical vapour deposition, Thin Solid Films, vol.130, issue.1-2, pp.135-154, 1985. ,
DOI : 10.1016/0040-6090(85)90303-7
Developments in the deposition of hard coatings by plasma-based techniques, Vacuum, pp.40-61 ,
Critical issues in plasma-assisted vapor deposition processes, IEEE Transactions on Plasma Science, vol.18, issue.6, pp.846-854, 1990. ,
DOI : 10.1109/27.61495
Contributionà l'étude de la synthèse de composés titane-azote par voie physique en phase vapeur réactive au moyen d'unprocédé de pulvérisation cathodique à hautetempérature.Caractérisatiorl métallurgique et mécanisme des dépôts élaborés, p.thèse INPL, 1985. ,
Etude comparative des décharges de pulvérisation nOn réactive et réactive par des méthodes spectroscopiques et électriques. Application à l'élaboration de couches minces de nitrure de titane, p.thése, 1985. ,
Evaporative ion plating: process mechanisms and optimization, IEEE Transactions on Plasma Science, vol.18, issue.6, pp.18-869, 1990. ,
DOI : 10.1109/27.61497
Ionization-assisted evaporative processes: techniques and film properties, IEEE Transactions on Plasma Science, vol.18, issue.6, pp.18-855, 1990. ,
DOI : 10.1109/27.61496
A high rate sputtering process for the formation of hard friction-reducing TiN coatings on tools, Thin Solid Films, vol.96, issue.1, pp.96-79, 1982. ,
DOI : 10.1016/0040-6090(82)90215-2
Deposition of hard wear-resistant coatîngsby reactive D. C. plasmatron sputtering, Thin SolidFilms, pp.18255-270, 1984. ,
Reactive deposition of TiN films llsing an unbalanced magnetron, Surf. and Coat. TechnoL, vol.39, issue.23, pp.40-487, 1989. ,
The reactive sputteringof thin films of titanium nitride onglass",proc, of the 8 th Int Conf. on Plasma Assisted Technologie, p.91 ,
CEP consultant LTD éditeur, pp.346-361, 1991. ,
Procédé de recouvrement de la surface d'une pièce conductrice de l'électricité, pp.77-17439 ,
Contribution à l'étude de la microstructure et des mécanismes d'endommagement en rayure de revêtements de nitrure.de . titane E et 0 élaborés par pulvérisation cathodique réactive sur des substrats en acier Z WDCVInteraction plasma-surface, Réactivité dans les plasmas, applications aux lasers et au, pp.243-262, 1983. ,
Etude des mécanismes de pulvérisation cathodique! haute température d'un alliage MCrAIYApplication au revêtements de superallfages à base nickelSpectroscopie d'une décharge luminescente, thèse INPL N~cy. (30) A. RICARD Laboratoire de Physique des Gaz et des Plasmas, Orsay. (31) T. CZERWIEC, "Spectroscopie atomique et moléculaire Laboratoire de Science et Génie des Surfaces, p.23, 1980. ,
Atomic transition probabilities. Scandium. through manganese, J. of Physicaland Chemical Reference data, issue.34 6, pp.13-35, 1927. ,
Atomic energy levels, National Standard Reference Data System, vol.35, 1971. ,
Etude d'une décharge électrique dans un mélange azote .. hydrogène pour la nitruration de surfaces métalliques!', rapport LP 198Etude par spectroscopie optique de l'interaction d'un plasma multipolaire d'hydrogène et dtune surface d'arséniure de gallium, LPGP~ Orsay. (38), p.thèse, 1982. ,
Etude d'une décharge de pulvérisation par spectrométrie d'émission et d'absorption, thèse de doctorat d'état, 1981. ,
The use of electrostatic probes for plasma diagnostics?A review, Plasma Chemistry and Plasma Processing, vol.17, issue.2, pp.113-140, 1982. ,
DOI : 10.1080/00207216308937594
Décharge électrique, pp.1-21, 1980. ,
Electric probes for plasma diagnostics, 1971. ,
Electrical probes in stationarytand flowing plasmas, 1975. ,
Influence· des paramètres d'une décharge. diode icontinue, sur la cinétique de fonnation et la structure de couches minces de titane et de nitrure de titane, 1985. ,
449~ (41) B. P'STAT~ "CoottJbùtion àl'éNdedelanitrumtion du fer pat: un plasma continue;;' pulsé, rappminternè LPMI (l989), 1924. ,
tmlaboration de revêtements de TiNa et de Ti2Ne par pulvérisation cathodique;' Etude· structurale et diagDosticdn plasma", commûnicàtion présentée au cORgté de'la;SociétéFrançaisedei PhysKJ.ùer (septem~ 1989), TiNgandTi2Ne pvd; Coàtings. Structurâl studiesand plasma diagnostic", communicaûon pr&ent6eià PSEWrZtft'lnt.Conf:on':èPlasm'aSmface EngiReéring,september'1044' lN 990), Garmisch-Partenkirchen ,
Law freqeooy'OC 'pulse plasma ,for iMn rii,triding!' ~\M.t;/Sci~ "ami Elig~Â.f13' fI991), ?, p.19 ,
une sbrideêlectrostatique1de bmgmuir dahs une'décharge de pui'Vérisationdetitanè If, DEA (1991 )~ Nancy~ (55) R.ORO$~ ItEssaisd'adhétenoe ,par ,rayures· app1i<tués aux revêtements de nitrure .de titane déposés par PVD sur aciers rapides en oelation avec la ptépamtion des supgtrats, 1986. ,
Structural"tudybf,titanium Ditride coatinginterfaces relatedtb'plasma diagnostic, Mat .. Sci;artd, issue.56, pp.276-283, 1991. ,
Excited states Of 'Plasm~ for steel smace nitridingandTiNdepdsition, Rure and AppLCbem, issue.58, pp.60-747, 1988. ,
Contrôle pat spectroscopie d'émission des procédés plasmas de nitrurations':'nitruration del'acier eidépôt de TiN, Rev. Int. Hautes Tempér. Refract. &, issue.59, p.24, 1987. ,
Role of Hydrogen in the Sputtering of Nickel???Chromium Films, Journal of Vacuum Science and Technology, vol.4, issue.3, pp.4-128 ,
DOI : 10.1116/1.1492534
Plasma diagnostics of sputtering glow discharges\ Solid State Technol, pp.49-52, 1971. ,
Pulvérisation réactive de type diode-continu polarisée ,
Pulvérisation cathodique du titane : étude électrique et spectromètrique de la décharge pour les conditions optimales de dépôt, J. Phys. D, issue.63, pp.9-1183, 1976. ,
Production et distribution en énergie d'atomes d'hydrogène il de traces dans une décharge de pulvérisation, Phys. Letters A, issue.64, pp.59-426, 1977. ,
Analyse du plasma ge??ne??rateur de couches minces d'oxydes de cuivre par pulve??risation cathodique re??active, Thin Solid Films, vol.8, issue.3, pp.169-182, 1971. ,
DOI : 10.1016/0040-6090(71)90105-2
Analysis of sputtering discharge by optical and mass spectrometry. 1. Platinum and tantalum sputtered in argon, J. Appt Phys, issue.66, p.44, 1973. ,
Hanbook of thin film technoL, 1970. ,
Electron deposition in water vapor, with atmospheric applications, J. Geophys. Research, vol.77, issue.68, pp.4797-481, 1972. ,
Correlation diagrams for electronic states of H2O and fragment species, Chemical Physics, vol.10, issue.2-3, pp.335-334, 1975. ,
DOI : 10.1016/0301-0104(75)87047-9
Excited states of gaseous ions. V. The predissociation of the h2o+ ion, Chemical Physics, vol.4, issue.3, pp.353-367, 1974. ,
DOI : 10.1016/0301-0104(74)85003-2
Dissociative excitation of water by electron impact, Chemical Physics, vol.6, issue.3, pp.445-454, 1974. ,
DOI : 10.1016/0301-0104(74)85028-7
On the investigation ofDC plasmatron discharges by optical emission spectrometry, Thin Solid Films, issue.73, pp.235-240, 1982. ,
Absolute measurements of emission ,
for dissociative excitations of H20 with ,
Mass spectrometry of ions in glow discharges. II. Negative glow in rare gases, J.Chem. Phys .?, vol.36, issue.75, pp.36-684, 1962. ,
Reaction-rate constants in steady-state hollow-cathode discharges : Ar +H20 reactions, Phys. Rev .. A, issue.76, pp.7-328, 1973. ,
O, The Journal of Chemical Physics, vol.35, issue.6, pp.1661-1665, 1960. ,
DOI : 10.1039/tf9484400108
URL : https://hal.archives-ouvertes.fr/hal-01169027
An evaluation of the titanium sublimation pump, Vacuum, vol.25, issue.8, pp.25-362, 1975. ,
DOI : 10.1016/0042-207X(75)91654-1
Thegcttering action ofevaporated films of titanium and erbium, ?. LPhys. D, issue.79, pp.5-1177, 1972. ,
The kinetics of thehydrogen-titanium reaction, J. Vae. Sei. Technol, vol.9, pp.548-551, 1972. ,
Plasma metallurgy, the principles ,
Glow discharge characteristcs when magnetron sputtering copper :in different plasma atmospheres operated at Jow imput power, Vacuum, issue.82, pp.38-93, 1988. ,
Surface des solides. Physisorption. Chimisorption. Ségrégation ,
Effects of monolayer coverages on substrate sputtering yields, Radiation Effects, vol.95, issue.1-2, pp.113-127, 1985. ,
DOI : 10.1016/0039-6028(80)90189-2
Sputter-erosion and impurity emission fromtÏtanÎum and vanadium at low~energyion bombardement, J. Nucl. Mat, vol.76, issue.85, pp.77-156, 1978. ,
par pulv??risation cathodique r??active, Nouvelle Revue d'Optique Appliqu??e, vol.2, issue.1, p.63, 1971. ,
DOI : 10.1088/0029-4780/2/1/309
Reliability of probe measurements in hot cathode gas diodes, J. Appl. Phys, vol.9, issue.87, pp.1035-1046, 1952. ,
Schapeof cathode darkspace of a sputtering plasma detennined from probe measuremems, J. Appt Phys, issue.88, pp.44-2153, 1973. ,
Effects of Contamination on Langmuir Probe Measurements in Glow Discharge Plasmas, Journal of Applied Physics, vol.41, issue.8, p.4134283432, 1970. ,
DOI : 10.1063/1.1723442
Plasma diagnostics with electric probes, Journal of Vacuum Science and Technology, vol.15, issue.2, pp.193-198, 1970. ,
DOI : 10.1116/1.569453
Surface contamination active electrodes in plasmas: distortion of convention al. '6 .. probe measurements, J. Appl. Phys, vol.5, issue.91, pp.46-139, 1975. ,
A neglegted parameter (water contamination) sputtering of MoS2 films, Thin Solid Films, vol.1397, pp.157-93, 1970. ,
Sorne speeial pumping problenms associated with the sputtering applications, J. Vae. Sei. TechnoL, pp.10-251, 1977. ,
Sputtered stainless steel-carbon coatings as a substitute for hard electrolytic chromium for potential applications in mechanics, Materials Science and Engineering: A, vol.140, pp.802-808, 1991. ,
DOI : 10.1016/0921-5093(91)90517-Q
Etude de la pulvérisation cathodique magnetron aciers inoxydables austénitiques dans des plasmas réactifs Ar-Cf4, Nz ou 0:2. Caractérisation chimique et structurale des dépôts réalisésThe preparation of substrates for film deposition using glow-discharge techniques, Nancy. revêtements enrichis en carbone Thèse (97) J. L. VOSSEN, pp.14201-240, 1989. ,
Sputter cleaning of i10n substrates and contamination of TiN studied by meâsurements in an UHV-PVD aparatus, Mat. Sei. and Eng. A, issue.98, pp.139-349, 1991. ,
Caractérisation microstructurale des interfaces de revêtements de titane et de nitrures de titane élaborés parPVD sur des aciers 6.5.2. il, Froc. 12 éme congrès mondial des traitements de surface, Interfinish, vol.88, issue.99, pp.4-7, 1988. ,
Contribution à l'étude des mécanismes d'endommagement des matériaux revêtus en sollicitation de contact, Thèse INPL, 1991. ,
Major damage mechanisms during scratch and wear testing of hard coatings on hard substrates, Thin Solid Films, pp.181-555, 1989. ,
Factors controlling the structure of sputtered Ta f11ms, Thin Solid Films, pp.16-129, 1973. ,
Role of surface hydroxyls in the nucleation of sputtered tantalum films, Thin Solid Films, vol.12, issue.2, pp.547-549, 1972. ,
DOI : 10.1016/0040-6090(72)90118-6
Lanice of sputtered MoS2 films, Thin SoUd Films, issue.104 ,
Preparation and properties of different types of sputtered MoS2 films, Wear, vol.114, issue.3, pp.263-274, 1987. ,
DOI : 10.1016/0043-1648(87)90116-5
Near-imerface structure of MOS2 min films", proc, of the 8 th Int. Conf. on Ion and Plasma Assisted Technology. IPAT'91 Brussels, 1991. ,
Micros.tructural studiesof the growth aluminium films with water contaminationEffecrs of water on the growth of aluminium films deposited by vacuum evaporation, 4062~4067. (l08) Thin SaUd Films, pp.139-77, 1986. ,
Adhesion of titanium nitide coatings on high-speed steels, J. Vac.Sci, issue.109 ,
Effect of substrate material and residual atmosphereon the composition of the coating-substrate interface of nitride coatings, Suf. Coat. Technol, issue.110, pp.41-167, 1990. ,
Structure, properties and applications of TiN coatings produced by sputter ionplating, Vacuum, pp.38-161, 1988. ,
The influence of titanium interlayets on the adhesion oftitanium nitride coatings··obtained by plasmaassisted vapour deposition, Mat. Sei. and Eng. A, issue.112, pp.139-71, 1991. ,
Perméation et fragilisation par l'hydrogène du titane et de ces alliages, Valdue, 1967. ,
Role of oxygen contamination on thanium nitriding, Surface and Interface Analysis, issue.114, pp.16-530, 1990. ,
Reduction of metal oxyde th in layers by hydrogen plasma, Vacuum, issue.115, pp.40177-178, 1990. ,
TiN coating adhesion studies using the scratch test method, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.3, issue.6, pp.3-2411, 1985. ,
DOI : 10.1116/1.572848
On the adhesion of plasma-deposited TiN on M2 steel, Materials Science and Engineering: A, vol.139, issue.118, pp.85-90, 1991. ,
DOI : 10.1016/0921-5093(91)90601-I
Gaz ionisés. Décharges électriques dans les gaz, 1965. ,
Ionized Gases, Réactivité dans applications aux lasers et au, 1965. ,
Contribution à modélisation du procédé de nitruration ionique, thèse INPL, 1989. ,
Mass-energy analysis of ions near the cathode of a glow discharge, Ill. diode, vol.18, p.515 ,
Ion energy at the cathode of a glow dischargeElectmneffects in sputtering and cosputtering, Phys. Rev. J. Appl. Phys, vol.131, issue.124125125, pp.219-228, 1963. ,
Plasma Diagnostics and Energy Transport of a dc Discharge Used for Sputtering, Journal of Applied Physics, vol.27, issue.7, pp.3047-3057, 1972. ,
DOI : 10.1063/1.1684763
Particle densities in high CUITent hollow cathode discharge, J. Appl. Phys, issue.127, pp.54-4939, 1983. ,
Electron,.impact excitation the argon atom, 433. (130), pp.59-67, 1930. ,
Population densities in a titanium hollow cathode, Journal of Physics B: Atomic and Molecular Physics, vol.14, issue.16, pp.2989-2993, 1981. ,
DOI : 10.1088/0022-3700/14/16/026
Kinetic reaction involving the titanium hollow cathode afterglow, Optics Communications, issue.132, pp.32-81, 1980. ,
Etude, dans une post-decharge cathode creuse, de transferts d'énergie entre états excités de l'atome de titane, induits par collisions avec des gaz rares et des molécules diatomiques; mise en évidence de processus réactifs conduisant à la synthèse de la molécule TiN, p.thèse, 1987. ,
Spectra Excited in an Argon Afterglow, The Journal of Chemical Physics, vol.40, issue.9, pp.2619-2626, 1964. ,
DOI : 10.1098/rspa.1929.0114
The production of excited métal ions in thermalenergy charge transfert Penning reactions, Phys. S, vol.7, pp.1698-1711, 1974. ,
Possibilities of obtaining laser action from singly ionised group elements through charge transfert cathode lasers, J. Phys ,
Etude de la lumière négative d'une décharge de pulvérisation cathodique par sondes de Langmuir, J. Phys. D, Il, pp.293-300, 1978. ,
Thermionicconstatlts ofmetals and semiconductors, Metals of the firsttransitiongroupl!, Proc. Roy. Soc. London A, pp.215-431, 1952. ,
Kineticand structural aspects of trappingand recycling of hydrogen onmetallic smfacesexposed to low.,.pressure hydrogen plasma, Vae. SeL TechnoLA, vol.7, pp.69-76, 1989. ,
A drift chamber study of the teaction ArH+ + H2 ~ H3+ + Ar and related reaetions, J. Chem. Phys, issue.140, pp.74-2853, 1981. ,
Quenehing cross sections for electronie energy transfertreaction·between metastable argon atoms ofnoble gasesand small molecules, J. Chem. Phys, issue.141, pp.593323-3340, 1973. ,
Energy transfert in collision of Ar (3Po, 2) metastableatoms with H (2S) atomS. 1. Total rate Constant and mechanism, Chem.Phys, issue.142, pp.28447-454, 1978. ,
Theoricalpotential curves for excited states of ArH and rate of collisional quenching of metastable Ar by H, J. Chem. Phys, issue.143, pp.73-894, 1980. ,
Assessment of the relative raIe of Penning ionisation in low-pressure glow discharge, AnaL Chem, issue.144, pp.61-1103, 1989. ,
Dissociative excitation of H2 : Spectrallineshapes and electron impact cross sections of the Balmer Hnes, Chem. Phys, vol.64, issue.145 1, pp.1122-1127, 1976. ,
Balmer-alpha emission and hydrogen-atom energy in ionsourcedischarges, Phys. Rev. A, pp.2-2152, 1982. ,
Line shapes of atomic hydrogen in hollow-cathode discharges, Optics Letters, vol.9, issue.8, pp.338-340, 1984. ,
DOI : 10.1364/OL.9.000338
Rovibrational molecular popuiations,atoms, and negative ions in H2 D2 magnetic multicusp discharges ,
Doppler-broadened line shapes of atomic hydrogen in a parallel-plate radio frequency discharge, Plasma Chemistry and Plasma Processing, vol.56, issue.4, pp.317-331, 1985. ,
DOI : 10.1016/B978-0-12-703550-5.50013-3
of atomic-hydrogen Hnes produeed at a cathode Rev, pp.194-199 ,
Spectroscopie investigation energetic atoms in a de hydrogen glow discharge, Phys. D, issue.152, pp.23-1168, 1990. ,
Doppler profile measuremems of Balmer-a radiation by e1ectron impact on ?, Chem. Phys, vol.11, pp.35-43, 1976. ,
The electron energy dependence of the Doppler profiles of the Balmer··u emission from H2, D2, CR4 and other simple hydrocarbons by electron impact, Chem. Phys, vol.21, issue.154, pp.203-210, 1977. ,
Electron impact dissociation of molecular Hydrogen and Deuterium: Isotope effect on the emission cross section of H* AND D* (n=3,4,5), Chemical Physics, vol.73, issue.1-2, pp.7399-106, 1982. ,
DOI : 10.1016/0301-0104(82)85152-5
Analysis of the translational energy distribution of H* produced in the e???H2 collision, Chemical Physics Letters, vol.65, issue.3, pp.610-612, 1979. ,
DOI : 10.1016/0009-2614(79)80302-4
Translation al energy distribution of excited hydrogen atom produced by 0-100 eV electron impact dissociation of Sif4 and Gef4, Chem. Phys, vol.112, issue.159, pp.69-74, 1984. ,
Influence of the bias on the composition, stucture and electrical properties of the reactively DC-Sputtered TiN films, Thin SoUd Films, issue.160, pp.9769-77, 1982. ,
Microstructure modification of TiN by ion bombardement during reactive sputter deposition, Thin Solid Films, vol.169, pp.299-314, 1989. ,
Investigation of TiN "r mnng a gunEtude des mécanismes d'echauffement de l'anode porte"substratsdans une décharge de pulvérisation diode, continue. Influence de température· et de la polarisation du substrat sur l, Thèse, 1991. ,
TiC and TiN coatings by reactive sputtering for fusion applications, Thin Solid Films, vol.108, issue.4, pp.395-400 ,
DOI : 10.1016/0040-6090(83)90120-7
Mechanisms of reactive sputteringof thanium" nitride and thanium carbide ,
Transmission electron microscopystudiesof brown and golden thanium nitride thin films as diffusion barriers in very large scale integrated circuits ,
Effects of the substrate temperature and substrate material on the structure of reactively sputtered TiN films, A Thin Solid Films, vol.3, pp.16021608-167, 1984. ,
Initial growth of TiN on different.phases of high·speed steel, Thin SolidFilms, vol.163170, issue.168, p.124, 1985. ,
Microstructure evolurion in TiN films reacrively sputter deposited on multiphase substrates, J. Vac. Sei. TechnoL A, vol.3, issue.169, pp.500-503, 1986. ,
New method for physical vapor deposition of metals, aHoys and compounds such as nitrides and carbides The Metals Society, Froc. Heat Treatments, vol.84, issue.170, 1984. ,
Analyse de la texture de couches minces de titane et de nitrure de titane obtenues par PVD, Le Vide les Couches Minces, pp.41-65, 1986. ,
URL : https://hal.archives-ouvertes.fr/hal-00301025
Equilibriumstudies ofrefractory nitrides, pp.69-299, 1965. ,
The microstructure of reactively sputtered Ti-N films containing the Ti2N phase, Acta Metallurgica, vol.33, issue.5, pp.797-803, 1985. ,
DOI : 10.1016/0001-6160(85)90103-8
Microstructure of TiN and Ti2N deposits prepared by actived reactiveevoporationMechanisms of reactive sputtering of titanium nitride thanium carbides. II : Morphology and structure, Thin SoHd Films Thin SoUd, vol.63, issue.174175, pp.105-367, 1979. ,
Structure and properties of TiN , Thin SoHd Films, p.128 ,
Bias-induced structure in reactively sputtered films" Appt Phys, pp.54-120 ,
Electrieal transport, optical properties, and structure of TiN films synthesized by low-energy ion assisted deposition, J. Appt Phys .?, vol.64, pp.225-234, 1988. ,
Microstructural and microchemical characterization of hard eoatings ,
Target and substrate surface reaction kinetics in magnetron sputtering of nitride coatings, Thin Solid Films, vol.191, issue.2, pp.191-335, 1990. ,
DOI : 10.1016/0040-6090(90)90384-P
Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature, Appt PHys. Let, issue.181, pp.49-1239, 1986. ,
Mechanisms ofreactive sputtering of titanium nitride and titanium carbide. 1 : Influence process parameters on film composition, Thin Solid Films, issue.182, pp.105-353, 1983. ,
Excitedatomic and molecular states in reactive plasmas used for tüanium nitride deposition on steel surfaces, J. Phys. D, issue.183, pp.18-1701, 1985. ,
Analysisof a reactive sputter ion plating discharge for TiN deposition using optical emission spectroscopy, Thin Solid Films, issue.184l985, pp.124-67 ,
Analysis of sputtering discharge by optical and mass spectrometry. IL Platinum and tantalum sputtered in argon 1 nitrogen mixtures, J, issue.185 ,
Analysis of an Ar-02-N2discharge for tantalum sputtering, J ,
Mechanism of rf reactive sputtering, J. Appt Phys, vol.46, issue.187, pp.3381-3383, 1975. ,
Mass flow limitations in reactive sputtering, Thin Solid Films, vol.130, issue.3-4, pp.307-313 ,
DOI : 10.1016/0040-6090(85)90361-X
The use of nitrogen flow as a deposition rate control in reactive sputtering, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.4, issue.3, pp.594-597, 1986. ,
DOI : 10.1116/1.573855
Plasma diagnostic in relation with the structure of 310 stainless steel-m coatings (m ::::: O,C,N) obtained by reactive magnetronsputtering, Proc. Of·gÙl Int.Conf. on Ion . and Plasma Assisted Technot. IPAT91, pp.75-80, 1991. ,
Correlations entre la nature du plasma de décharge et les caractéristiques métallurgiques des dépôts de composés métalliques réfractaires dans les 'systèmes de dépôt ioniques, Le Vide les Couches MincesLes dépôts ioniques, p.55, 1985. ,
Mechanisms of the biased sputtering of titanium in an Ar???N2 mixture, Thin Solid Films, vol.120, issue.3, pp.223-230, 1984. ,
DOI : 10.1016/0040-6090(84)90298-0
The influence of NZ partial pressure and substratebias on electron densityandtemperaturein a de sputteringdiode, Vacuum, pp.37-825, 1987. ,
Reactive sputtering of metals in oxidizing atmospheres, Thin Solid Films, vol.17, issue.2, pp.163-176, 1973. ,
DOI : 10.1016/0040-6090(73)90125-9
Reactive d.c. high rate sputteringasprocluction technology, Surf. Coat. TechnoL, pp.33-495, 1987. ,
TiN hard coatings deposited on high???speed steel substrates by reactive direct current magnetron sputtering, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.4, pp.2180-2183 ,
DOI : 10.1116/1.574949
EffectsofN2-Armixingon thereactive sputtering characteristics of silicon, Thin SoUd Films, vol.101, pp.1-6, 1983. ,
Reactive sputtering characteristics .ofsilieon in an NZ-Ar mixtureReattive sputtering, 14J.15L (199) W. D. WESTWOOD, pp.141-79, 1986. ,
Irifluence of the pumping speedon the hysteresis effect in the reactive sputtering of thinfilms, Vacuum, issue.201, pp.37729-738, 1987. ,
R.F. reactively sputtered TiN: Characterization and adhesion to materials of technical interest, Thin Solid Films, vol.122, issue.1, pp.63-71, 1984. ,
DOI : 10.1016/0040-6090(84)90379-1
URL : https://hal.archives-ouvertes.fr/hal-00667445
Influence of the nitrogen partial pressure on the properties of de sputtered titanium titanium films, Films, issue.203, pp.111-339, 1984. ,
Reactive sputter deposition: A quantitative analysis, Thin Solid Films, vol.118, issue.3, pp.8-301, 1984. ,
DOI : 10.1016/0040-6090(84)90201-3
The problem of reactive sputtering and cosputtering of elemental targets, Thin Solid Films, vol.92, issue.4, pp.1-380 ,
DOI : 10.1016/0040-6090(82)90162-6
Mechanisms of voltage controlled, reactive, pl anar magnetron sputtering of Al in Ar 1 and Arl Û2 atmospheres, J. Vac. Sci.Technol, issue.206 ,
Modeling of reactive sputtering of compound materials, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.5, issue.2, pp.202-207, 1987. ,
DOI : 10.1116/1.574104
A physical model for eliminating instabilities in reactive sputtering, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.6, issue.3, pp.1832-1836, 1988. ,
DOI : 10.1116/1.575264
Predicting thin???film stoichiometry in reactive sputtering, Journal of Applied Physics, vol.40, issue.3, pp.887-89, 1988. ,
DOI : 10.1016/0040-6090(84)90201-3
nA model for reactive sputtering with magnetrons, Vacuum, issue.210, pp.39-949, 1989. ,
The use of process modeling for optimum design of reactive sputtering processes, Surface and Coatings TechnoL, pp.40-465, 1989. ,
Modeling multicomponent reactive sputtering, J. Vac. Sci. Technol. A, issue.9, pp.619-624, 1991. ,
Présentation d'un modéle de pulvérisation réactive, Appliqué au cas des revêtements AISI 31O-N), 1991. ,
Première tentative d'élaboration d'un modéle genéralisé de pulvérisation réactive (Appliqué aux cas des revêtements AISI 31O-N, et 0), Rapport interne LSGS, issue.214, 1991. ,
Partial pressure control ofreactively sputtered titanium nitride, J. Vac, issue.220 ,
DOI : 10.1116/1.572957
Pressure stability in reactive magnetron sputtering, Thin Solid Films, vol.158, issue.1, pp.141-149, 1988. ,
DOI : 10.1016/0040-6090(88)90310-0
The formation and control of direct CUITent magnetron discharges for the high-rate reactive processing of thin films, pp.1230-1234, 1989. ,
liA simple finite element model for reactive spuUerdeposition systems, IBM J, Res. Develop, issue.223, pp.34-680, 1990. ,
Stabilisation of the reactive magnetrondischarge with close target-to-substrate coupling, Proc. of the 3 th Int.Conf. on Vac. Web Coating Texas, pp.155-169, 1989. ,
On the use of a plasma-emission monitor for the control of thereactive sputter process and its application in the production of indium-tin layers, Proc. of the 6 th InL Conf. on Ion Plating and Plasma Assisted TechnoL, IPA T87, pp.23-30, 1987. ,
Screened Probe Measurements in the Helium Negative Glow, Proceedings of the Physical Society. Section B, vol.68, issue.11, pp.836-848, 1955. ,
DOI : 10.1088/0370-1301/68/11/306
Vau der \VlEL, J. KISTEMAKER, Physica, issue.227, p.3194, 1965. ,