P. L. Li, A. Voss, and . Ougazzaden, Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm, Journal of Crystal Growth, vol.432, pp.37-44, 2015.
DOI : 10.1016/j.jcrysgro.2015.09.013

URL : https://hal.archives-ouvertes.fr/hal-01212591

A. Voss and . Ougazzaden, AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm, Optical Materials Express, vol.5, issue.2, pp.380-392, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01108085

X. Li, S. Sundaram, Y. Gmili, T. Moudakir, F. Genty et al., BAlN thin layers for deep UV applications, physica status solidi (a), vol.298, issue.239, pp.745-750, 2015.
DOI : 10.1016/j.jcrysgro.2006.10.064

URL : https://hal.archives-ouvertes.fr/hal-01109577

X. Li, S. Sundaram, Y. Gmili, F. Genty, S. Bouchoule et al., MOVPE grown periodic AlN/BAlN heterostructure with high boron content, Journal of Crystal Growth, vol.414, pp.119-122, 2015.
DOI : 10.1016/j.jcrysgro.2014.09.030

URL : https://hal.archives-ouvertes.fr/hal-01170572

S. Sundaram, R. Puybaret, Y. Gmili, X. Li, P. L. Bonanno et al., Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates, Applied Physics Letters, vol.107, issue.11, p.113105, 2015.
DOI : 10.1364/OME.4.001030

URL : https://hal.archives-ouvertes.fr/hal-01203766

S. Sundaram, R. Puybaret, X. Li, Y. Gmili, J. Streque et al., High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices, physica status solidi (a), vol.96, issue.4, pp.740-744, 2015.
DOI : 10.1063/1.3443734

URL : https://hal.archives-ouvertes.fr/hal-01117214

S. Sundaram, R. Puybaret, Y. Gmili, X. Li, P. L. Bonanno et al., Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template, Journal of Applied Physics, vol.116, issue.16, p.163105, 2014.
DOI : 10.1364/OME.4.001030

URL : https://hal.archives-ouvertes.fr/hal-01077688

X. Li, S. Sundaram, Y. Gmili, S. Bouchoule, G. Patriarche et al., MOVPE growth and characterizations of novel BAlN/AlGaN Bragg mirrors reflecting at 265 nm, 11th International Conference on Nitride Semiconductors (ICNS-11), 2015.

X. Li, Y. Gmili, G. L. Gac, S. Sundaram, S. Bouchoule et al., Defects in AlGaN MQWs grown on AlN templates and optical investigations for emission at 280 nm, The European Workshop on Metalorganic Vapour Phase Epitaxy, pp.6-10, 2015.

Y. Leymarie, J. Gmili, F. Streque, J. Genty, P. L. Salvestrini et al., BAlGaN-based Vertical Cavity Surface Emitting Laser Operating in Deep UV Region, Doctoral Consortium of 3rd International Conference on Photonics, Optics and Laser Technology (DCPHOTOPICS2015), pp.12-14, 2015.

X. Li, S. Sundaram, Y. Gmili, F. Genty, S. Bouchoule et al., MOVPE grown periodic AlN/BAlN heterostructure with high boron content, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE2014)
DOI : 10.1016/j.jcrysgro.2014.09.030

URL : https://hal.archives-ouvertes.fr/hal-01170572

X. Li, S. Sundaram, Y. Gmili, T. Moudakir, P. Disseix et al., AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template, 17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE2014), pp.13-18, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01108899

X. Li, S. Sundaram, Y. Gmili, T. Moudakir, F. Genty et al., BAlN thin layers for deep UV applications, European materials society, 2014 SPRING MEETING (E-MRS2014), pp.26-30, 2014.
DOI : 10.1016/j.jcrysgro.2006.10.064

URL : https://hal.archives-ouvertes.fr/hal-01109577

G. Rakotonanahary, Spectroscopie des transitions excitoniques dans des puits quantiques GaN/AlGaN, 2011.
URL : https://hal.archives-ouvertes.fr/tel-00662445

E. T. Yu, X. Z. Dang, P. M. Asbeck, S. S. Lau, G. J. Sullivan et al., Spontaneous and piezoelectric polarization effects in III???V nitride heterostructures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.17, issue.4, pp.1742-1749, 1999.
DOI : 10.1116/1.590818

R. People and J. C. Bean, /Si strained???layer heterostructures, Applied Physics Letters, vol.33, issue.3, pp.322-324, 1985.
DOI : 10.1016/0040-6090(76)90085-7

A. Fischer, H. Kühne, and H. Richter, New Approach in Equilibrium Theory for Strained Layer Relaxation, Physical Review Letters, vol.59, issue.20, pp.2712-2715, 1994.
DOI : 10.1063/1.106301

M. Abid, T. Moudakir, Z. Djebbour, G. Orsal, S. Gautier et al., Blue???violet boron-based Distributed Bragg Reflectors for VCSEL application, Journal of Crystal Growth, vol.315, issue.1, pp.283-287, 2011.
DOI : 10.1016/j.jcrysgro.2010.09.008

URL : https://hal.archives-ouvertes.fr/hal-00554262

M. Abid, Design and epitaxial growth of vertical-cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength, 2013.

D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler et al., Optical constants of epitaxial AlGaN films and their temperature dependence, Journal of Applied Physics, vol.43, issue.10, pp.5090-5096, 1997.
DOI : 10.1063/1.1661813

H. Hirayama, J. Norimatsu, N. Noguchi, S. Fujikawa, T. Takano et al., Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates, physica status solidi (c), vol.6, issue.S2, pp.474-477, 2009.
DOI : 10.1002/pssc.200880959

K. Nagamatsu, N. Okada, H. Sugimura, H. Tsuzuki, F. Mori et al., High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN, Journal of Crystal Growth, vol.310, issue.7-9, pp.2326-2329, 2008.
DOI : 10.1016/j.jcrysgro.2007.11.152

A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich et al., AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates, physica status solidi (a), vol.24, issue.S2, pp.451-454, 2013.
DOI : 10.1109/LPT.2012.2210542

M. Martens, F. Mehnke, C. Kuhn, C. Reich, V. Kueller et al., Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates, IEEE Photonics Technology Letters, vol.26, issue.4, pp.342-345, 2014.
DOI : 10.1109/LPT.2013.2293611

L. P. Zhang, D. P. You, and . Yu, Transmission electron microscopy investigation of inversion domain boundary in Al 0.65 Ga 0.35 N grown on AlN/sapphire template, Applied Physics Letters, vol.95, p.112106, 2009.

F. Mehnke, T. Wernicke, H. Pingel, C. Kuhn, C. Reich et al., Highly conductive n-Al x Ga 1?x N layers with aluminum mole fractions above 80%, Applied Physics Letters, vol.103, p.212209, 2013.

M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin, and H. X. Jiang, Transport properties of highly conductive n-type Al-rich AlxGa1???xN(x???0.7), Applied Physics Letters, vol.85, issue.17, pp.3769-3711, 2004.
DOI : 10.1103/PhysRevB.61.R16283

R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie et al., Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications, physica status solidi (c), vol.8, issue.7-8, pp.2031-2033, 2011.
DOI : 10.1002/pssc.201000964

D. Nilsson, X. T. Trinh, E. Janzén, N. T. Son, and A. Kakanakova-georgieva, ??? 1), physica status solidi (b), vol.70, issue.6, pp.1306-1310, 2015.
DOI : 10.1103/PhysRevB.70.235212

T. Kinoshita, T. Obata, H. Yanagi, and S. I. Inoue, High p-type conduction in high-Al content Mg-doped AlGaN, Applied Physics Letters, vol.102, issue.1, p.12105, 2013.
DOI : 10.1063/1.372098

J. Ding, H. Jeon, .. V. Nurmikko, H. Luo, N. Samarth et al., Laser action in the blue???green from optically pumped (Zn,Cd)Se/ZnSe single quantum well structures, Applied Physics Letters, vol.47, issue.26, pp.2756-2758, 1990.
DOI : 10.1063/1.95953

B. Gil, Group III nitride semiconductor compounds. Series on semiconductor science and technology: 6, 1998.

. El-masry, Growth and characterization of AlInGaN quaternary alloys, Applied Physics Letters, vol.68, issue.1, pp.40-42, 1996.

M. Shatalov, J. Zhang, A. S. Chitnis, S. Member, V. Adivarahan et al., Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells, IEEE Journal of Selected Topics in Quantum Electronics, vol.8, issue.2, pp.302-309, 2002.
DOI : 10.1109/2944.999185

I. Akasaki, H. Amano, S. Sota, H. Sakai, T. Tanaka et al., Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device, Japanese Journal of Applied Physics, vol.34, issue.11B, pp.1517-1519, 1995.
DOI : 10.7567/JJAP.34.L1517

J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, M. Banas et al., AlGaN/GaN quantum well ultraviolet light emitting diodes, Applied Physics Letters, vol.73, issue.12, pp.1688-1690, 1998.
DOI : 10.1063/1.120688

M. Shatalov, W. Sun, A. Lunev, X. Hu, A. Dobrinsky et al., AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%, Applied Physics Express, vol.5, issue.8, p.82101, 2012.
DOI : 10.1143/APEX.5.082101

M. Ippommatsu, A. Hirano, I. Akasaki, and H. Amano, Development of AlGaN DUV-LED, 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), pp.1-3, 2013.
DOI : 10.1109/CLEOPR.2013.6599921

M. Kneissl, Z. Yang, M. Teepe, C. Knollenberg, O. Schmidt et al., Ultraviolet semiconductor laser diodes on bulk AlN, Journal of Applied Physics, vol.722, issue.12, p.123103, 2007.
DOI : 10.1063/1.120575

H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama et al., Novel UV devices on high-quality AlGaN using grooved underlying layer, Journal of Crystal Growth, vol.311, issue.10, pp.2860-2863, 2009.
DOI : 10.1016/j.jcrysgro.2009.01.031

M. Lamy, P. Akhter, B. Maaskant, A. Corbett, A. Hangleiter et al., Growth optimization and characterization of lattice-matched Al 0.82 In 0.18 N optical confinement layer for edge emitting nitride laser diodes, Journal of Crystal Growth, vol.338, issue.1, pp.20-29, 2012.

H. Yoshida, M. Kuwabara, Y. Yamashita, K. Uchiyama, and H. Kan, The current status of ultraviolet laser diodes, physica status solidi (a), vol.7, issue.7, pp.1586-1589, 2011.
DOI : 10.1002/pssc.200983625

K. H. Li, X. Liu, Q. Wang, S. Zhao, and Z. Mi, Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature, Nature Nanotechnology, vol.24, issue.2, pp.140-144, 2015.
DOI : 10.1088/0957-4484/24/30/305703

J. Xie, S. Mita, Z. Bryan, W. Guo, L. Hussey et al., Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures, Applied Physics Letters, vol.102, issue.17, p.171102, 2013.
DOI : 10.1063/1.3583442

T. Teepe and Y. Z. Wunderer, Deep UV AlGaN lasers, the 9th International Symposium on Semiconductor Light Emitting Devices

H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata, Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes, Japanese Journal of Applied Physics, vol.53, issue.10, p.100209, 2014.
DOI : 10.7567/JJAP.53.100209

H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata, 231???261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire, Applied Physics Letters, vol.91, issue.7, p.71901, 2007.
DOI : 10.1063/1.1737061

X. Li, T. Detchprohm, T. Kao, M. M. Satter, S. Shen et al., Low-threshold stimulated emission at 249

Y. Tian, J. Yan, Y. Zhang, X. Chen, Y. Guo et al., Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser, Optics Express, vol.23, issue.9, p.11334, 2015.
DOI : 10.1364/OE.23.011334

S. Zhao, A. T. Connie, M. H. Dastjerdi, X. H. Kong, Q. Wang et al., Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources, Scientific Reports, vol.5, issue.1, p.8332, 2015.
DOI : 10.1038/ncomms4825

S. Zhao, X. Liu, S. Y. Woo, J. Kang, G. Botton et al., An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band, Applied Physics Letters, vol.3, issue.4, p.43101, 2015.
DOI : 10.1063/1.4921626

J. M. Redwing, D. A. Loeber, N. G. Anderson, M. A. Tischler, and J. S. Flynn, An optically pumped GaN???AlGaN vertical cavity surface emitting laser, Applied Physics Letters, vol.35, issue.1, pp.1-3, 1996.
DOI : 10.1063/1.118104

I. L. Krestnikov and N. N. Ledentsov, Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature, physica status solidi (b), vol.216, issue.1, pp.511-516, 1999.
DOI : 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection, Applied Physics Express, vol.1, p.121102, 2008.
DOI : 10.1143/APEX.1.121102

Y. K. Lee, M. H. Kuo, H. C. Shih, T. C. Kuo, S. C. Lu et al., Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a compositiongraded electron-blocking layer, Laser Physics Letters, vol.11, p.85002, 2014.

D. Kasahara, D. Morita, T. Kosugi, K. Nakagawa, J. Kawamata et al., Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature, Applied Physics Express, vol.4, issue.7, p.72103, 2011.
DOI : 10.1143/APEX.4.072103

O. Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann et al., High-reflectivity ultraviolet AlGaN???AlGaN distributed Bragg reflectors, High-reflectivity ultraviolet AlGaN/AlGaN distributed Bragg reflectors, p.171101, 2006.
DOI : 10.1063/1.116115

E. Feltin, J. F. Carlin, J. Dorsaz, G. Christmann, R. Butt et al., Crack-free highly reflective AlInN???AlGaN Bragg mirrors for UV applications, Applied Physics Letters, vol.88, issue.5, p.51108, 2006.
DOI : 10.1063/1.371512

C. G. Moe, Y. Wu, J. Piprek, S. Keller, J. S. Speck et al., AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths, physica status solidi (a), vol.76, issue.1, pp.1915-1919, 2006.
DOI : 10.1557/S1092578300001484

A. R. Getty, A. David, Y. Wu, C. Weisbuch, and J. S. Speck, Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications, Japanese Journal of Applied Physics, vol.46, issue.No. 32, pp.767-769, 2007.
DOI : 10.1143/JJAP.46.L767

L. Zhang, K. Dong, D. Chen, Y. Liu, J. Xue et al., Solar-blind ultraviolet AlInN/AlGaN distributed Bragg reflectors, Applied Physics Letters, vol.102, issue.24, p.242112, 2013.
DOI : 10.1063/1.122041

L. Zhang, Z. Liu, X. Huang, Q. Li, R. Zhang et al., Properties of an AlGaN/AlN distributed-Bragg-reflector structure, Journal of the Korean Physical Society, vol.65, issue.7, pp.1101-1105, 2014.
DOI : 10.3938/jkps.65.1101

M. P. Hoffmann, A. Franke, M. Bobea, F. Kaess, R. Kirste et al., High reflective AlN/AlGaN distributed Bragg reflectors for UV microcavity lasers, Gallium Nitride Materials and Devices II, Proc. of SPIE, p.64731, 2015.

S. Watanabe, T. Takano, K. Jinen, J. Yamamoto, and H. Kawanishi, Refractive indices of BxAl1???xN (x= 0???0.012) and ByGa1???yN (y= 0???0.023) epitaxial layers in ultraviolet region, physica status solidi (c), vol.0, issue.7, pp.2691-2694, 2003.
DOI : 10.1002/pssc.200303549

M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En-naciri et al., Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications, Applied Physics Letters, vol.100, issue.5, p.51101, 2012.
DOI : 10.1063/1.366309

URL : https://hal.archives-ouvertes.fr/hal-00666779

Y. Kuga, T. Shirai, M. Haruyama, H. Kawanishi, and Y. Suematsu, Violet and Near-UV Light Emission from GaN/Al 0.08 Ga 0.92 N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy, Japanese Journal of Applied Physics, vol.34, pp.4085-4086, 1995.

A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson et al., Growth of GaBN ternary solutions by organometallic vapor phase epitaxy, Journal of Electronic Materials, vol.18, issue.1, pp.237-242, 1997.
DOI : 10.1116/1.1315741

A. Nakajima, Y. Furukawa, H. Yokoya, and H. Yonezu, Growth of BxAl1???xN layers using decaborane on SiC substrates, Journal of Crystal Growth, vol.278, issue.1-4, pp.437-442, 2005.
DOI : 10.1016/j.jcrysgro.2005.01.003

A. Y. Polyakov, M. Shin, W. Qian, M. Skowronski, D. W. Greve et al., Growth of AlBN solid solutions by organometallic vapor-phase epitaxy, Journal of Applied Physics, vol.25, issue.4, pp.1715-1719, 1997.
DOI : 10.1111/j.1151-2916.1981.tb15897.x

M. Shibata, M. Kurimoto, J. Yamamoto, T. Honda, and H. Kawanishi, GaN/BAlN heterostructure grown on a (0001)6H???SiC substrate by metalorganic vapor phase epitaxy, Journal of Crystal Growth, vol.189, issue.190, pp.189-190, 1998.
DOI : 10.1016/S0022-0248(98)00327-3

C. H. Wei, Z. Y. Xie, J. H. Edgar, K. C. Zeng, J. Y. Lin et al., MOCVD growth of GaBN on 6H-SiC (0001) substrates, Journal of Electronic Materials, vol.72, issue.4, pp.452-456, 2000.
DOI : 10.1557/PROC-482-1125

T. Takano, M. Kurimoto, J. Yamamoto, and H. Kawanishi, Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H???SiC substrate by LP-MOVPE for deep-UV emission, Journal of Crystal Growth, vol.237, issue.239, pp.237-239, 2002.
DOI : 10.1016/S0022-0248(01)02026-7

T. Akasaka and T. Makimoto, Flow-rate modulation epitaxy of wurtzite AlBN, Applied Physics Letters, vol.88, issue.4, p.41902, 2006.
DOI : 10.1143/JJAP.42.2305

S. Gautier, C. Sartel, S. Ould-saad-hamady, N. Maloufi, J. Martin et al., MOVPE growth study of BxGa(1???x)N on GaN template substrate, Superlattices and Microstructures, vol.40, issue.4-6, pp.233-248, 2006.
DOI : 10.1016/j.spmi.2006.09.021

URL : https://hal.archives-ouvertes.fr/hal-00181874

J. Kim, R. D. Ryou, A. A. Dupuis, and . Sirenko, Bandgap bowing in BGaN thin films, Applied Physics Letters, vol.93, p.83118, 2008.
URL : https://hal.archives-ouvertes.fr/hal-00315845

H. Kawanishi and T. Honda, Fabrications of BAlGaInN multi-Layer or quantum well structure for blue to UV Light emitter and its applications to optical devices, Photonics Based on Wavelength Integration and Manipulation, vol.2, pp.19-24, 2005.

J. Edgar, D. Smith, C. Eddy, B. Carosella, and . Sartwell, c-Boron???aluminum nitride alloys prepared by ion-beam assisted deposition, Thin Solid Films, vol.298, issue.1-2, pp.33-38, 1997.
DOI : 10.1016/S0040-6090(96)08884-0

V. K. Gupta, C. C. Wamsley, M. W. Koch, and G. W. Wicks, Molecular beam epitaxy growth of boron-containing nitrides, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.17, issue.3, pp.1246-1248, 1999.
DOI : 10.1116/1.590731

L. Liljeholm, M. Junaid, T. Kubart, J. Birch, L. Hultman et al., Synthesis and characterization of (0001)-textured wurtzite Al1-xBxN thin films, Surface and Coatings Technology, vol.206, issue.6, pp.1033-1036, 2011.
DOI : 10.1016/j.surfcoat.2011.07.028

J. Song, J. Huang, J. C. Sung, S. Wang, H. Lu et al., Interfacial Microstructure Evolution of (B, Al)N Films Grown on Diamond Substrates, Thin Solid Films, vol.519, issue.13, pp.4212-4215, 2011.
DOI : 10.1016/j.tsf.2011.02.012

C. Wei and J. Edgar, Unstable composition region in the wurtzite B1???x???yGaxAlyN system, Journal of Crystal Growth, vol.208, issue.1-4, pp.179-182, 2000.
DOI : 10.1016/S0022-0248(99)00397-8

T. Akasaka, Y. Kobayashi, and T. Makimoto, Nonpolar AlBN (112??0) and (11??00) films grown on SiC substrates, Applied Physics Letters, vol.91, issue.4, p.41914, 2007.
DOI : 10.1063/1.1498010

A. R. Denton and N. W. Ashcroft, Vegard???s law, Physical Review A, vol.1, issue.6, pp.3161-3164, 1991.
DOI : 10.1088/0953-8984/1/41/026

S. R. Lee, A. F. Wright, M. H. Crawford, G. Petersen, J. Han et al., The band-gap bowing of AlxGa1???xN alloys, Applied Physics Letters, vol.30, issue.22, pp.3344-3346, 1999.
DOI : 10.1063/1.114274

W. Shan, J. W. Ager, W. Walukiewicz, E. E. Haller, B. D. Little et al., Near-band-edge photoluminescence emission in AlxGa1???xN under high pressure, Applied Physics Letters, vol.51, issue.18, pp.2274-2276, 1998.
DOI : 10.1063/1.117767

A. Azzi, M. Zaoui, and . Ferhat, On the importance of the band gap bowing in Boron-based III???V ternary alloys, Solid State Communications, vol.144, issue.5-6, pp.245-248, 2007.
DOI : 10.1016/j.ssc.2007.08.017

URL : https://hal.archives-ouvertes.fr/hal-00185773

I. Vurgaftman, J. R. Meyer, and L. R. Ram-mohan, Band parameters for III???V compound semiconductors and their alloys, Journal of Applied Physics, vol.482, issue.11, pp.5815-5875, 2001.
DOI : 10.1103/PhysRevB.57.R9427

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Unique optical properties of AlGaN alloys and related ultraviolet emitters, Applied Physics Letters, vol.84, issue.25, pp.5264-5266, 2004.
DOI : 10.1063/1.1644050

M. Leroux, F. Semond, F. Natali, D. Byrne, F. Cadoret et al., About some optical properties of AlxGa1???xN /GaN quantum wells grown by molecular beam epitaxy, Superlattices and Microstructures, vol.36, issue.4-6, pp.659-674, 2004.
DOI : 10.1016/j.spmi.2004.09.024

H. Ryu, I. Choi, H. Choi, and J. Shim, Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes, Applied Physics Express, vol.6, issue.6, p.62101, 2013.
DOI : 10.7567/APEX.6.062101

T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt et al., Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes, Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes, p.171105, 2010.
DOI : 10.1063/1.3236533

M. Leroux, S. Dalmasso, F. Natali, S. Helin, C. Touzi et al., Optical Characterization of AlxGa1?xN Alloys (x < 0.7) Grown on Sapphire or Silicon, physica status solidi (b), vol.59, issue.3, pp.887-891, 2002.
DOI : 10.1103/PhysRevB.59.10071

F. Bernadini, V. Fiorentini, and D. Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.41, issue.16, pp.10024-10027, 1997.
DOI : 10.1109/58.265820

O. Ambacher, Growth and applications of Group III-nitrides, Journal of Physics D: Applied Physics, vol.31, issue.20, pp.2653-2710, 1998.
DOI : 10.1088/0022-3727/31/20/001

H. M. Ng, R. Harel, S. N. Chu, and A. Y. Cho, The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction, Journal of Electronic Materials, vol.79, issue.2, pp.134-137, 2001.
DOI : 10.1109/ULTSYM.1981.197646

V. Fiorentini, F. Bernardini, F. D. Sala, A. D. Carlo, and P. Lugli, Effects of macroscopic polarization in III-V nitride multiple quantum wells, Physical Review B, vol.85, issue.12, pp.8849-8858, 1999.
DOI : 10.1063/1.369197

K. Tsubouchi and N. Mikoshib, Zero-Temperature-Coefficient SAW Devices on A1N Epitaxial Films, IEEE Transactions on Sonics and Ultrasonics, pp.634-644, 1985.

A. Barker and M. Ilegems, Infrared Lattice Vibrations and Free-Electron Dispersion in GaN, Physical Review B, vol.5, issue.14, pp.734-750, 1973.
DOI : 10.1016/0022-2313(72)90032-4

V. W. Chin, T. L. Tansley, and T. Osotchan, Electron mobilities in gallium, indium, and aluminum nitrides, Journal of Applied Physics, vol.66, issue.11, pp.7365-7372, 1994.
DOI : 10.1049/el:19840729

F. Bernardini, V. Fiorentini, and D. Vanderbilt, Accurate calculation of polarization-related quantities in semiconductors, Physical Review B, vol.58, issue.19, p.193201, 2001.
DOI : 10.1103/PhysRevB.58.15292

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt et al., Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells, Journal of Applied Physics, vol.4, issue.7, pp.3714-3720, 1999.
DOI : 10.1103/PhysRevB.7.743

G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy, 1999.

A. Mircea, A. Ougazzaden, and R. Mellet, Very uniform epitaxy, Progress in Crystal Growth and Characterization of Materials, pp.39-49, 1989.
DOI : 10.1016/0146-3535(89)90011-7

S. Gautier, C. Sartel, S. Ould-saad, J. Martin, A. Sirenko et al., GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3, Journal of Crystal Growth, vol.298, pp.428-432, 2007.
DOI : 10.1016/j.jcrysgro.2006.10.064

URL : https://hal.archives-ouvertes.fr/hal-00334614

M. A. Moram and M. E. Vickers, X-ray diffraction of III-nitrides, Reports on Progress in Physics, vol.72, issue.3, p.36502, 2009.
DOI : 10.1088/0034-4885/72/3/036502

K. Pantzas, G. Patriarche, D. Troadec, S. Gautier, T. Moudakir et al., Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy, Nanotechnology, vol.23, issue.45, p.455707, 2012.
DOI : 10.1088/0957-4484/23/45/455707

URL : https://hal.archives-ouvertes.fr/hal-00747027

. Veeco-instruments-inc, A Practical Guide to Scanning Probe Microscopy (SPM), " tech. rep, 2005.

X. Li, Y. O. Wei, S. Wang, H. Xie, T. Kao et al., Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition, Journal of Crystal Growth, vol.414, pp.76-80, 2015.
DOI : 10.1016/j.jcrysgro.2014.10.007

X. Li, S. Wang, H. Xie, Y. O. Wei, T. Kao et al., Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition, physica status solidi (b), vol.105, issue.2, pp.1089-1095, 2015.
DOI : 10.1063/1.4897527

Y. L. Tsai, C. L. Wang, P. H. Lin, W. T. Liao, and J. R. Gong, Observation of compositional pulling phenomenon in AlxGa1???xN (0.4<x<1.0) films grown on (0001) sapphire substrates, Applied Physics Letters, vol.4, issue.1, pp.31-33, 2003.
DOI : 10.1007/BF02657780

B. Liu, R. Zhang, J. G. Zheng, X. L. Ji, D. Y. Fu et al., Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors, Applied Physics Letters, vol.98, issue.26, p.261916, 2011.
DOI : 10.1063/1.1342020

Z. Chen, Y. Pei, S. Newman, D. Brown, R. Chung et al., Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect, Applied Physics Letters, vol.2004, issue.17, p.171117, 2009.
DOI : 10.1016/j.jcrysgro.2006.01.021

G. B. Stringfellow, Compositional Ordering in Semiconductor Alloys, MRS Proceedings, vol.396
DOI : 10.1063/1.102881

J. Tersoff, Stress-Driven Alloy Decomposition during Step-Flow Growth, Physical Review Letters, vol.74, issue.6, pp.2017-2020, 1996.
DOI : 10.1103/PhysRevLett.74.4962

P. Venezuela, J. Tersoff, J. Floro, E. Chason, D. Follstaedt et al., Self-organized growth of alloy superlattices, Letters to nature, pp.678-681, 1999.
DOI : 10.1103/PhysRevB.56.R4394

B. Reuters, M. Finken, A. Wille, B. Holländer, M. Heuken et al., Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy, Journal of Applied Physics, vol.112, issue.9, p.93524, 2012.
DOI : 10.1016/j.ssc.2005.10.030

P. Bogus?awski, K. Rapcewicz, and J. Bernholc, Surface segregation and interface stability of AlN, /InN , and AlN/InN {0001} epitaxial systems, pp.820-826, 2000.

J. H. Van-der-merwe, Crystal Interfaces. Part II. Finite Overgrowths, Journal of Applied Physics, vol.34, issue.1, pp.123-127, 1962.
DOI : 10.1088/0370-1301/68/7/110

J. H. Van-der-merwe and W. A. Jesser, An exactly solvable model for calculating critical misfit and thickness in epitaxial superlattices: Layers of equal elastic constants and thicknesses, Journal of Applied Physics, vol.81, issue.5, pp.1509-1517, 1988.
DOI : 10.1016/0022-0248(75)90171-2

J. Matthews and A. Blakeslee, Defects in epitaxial multilayers I. Misfit dislocations, Journal of Crystal Growth, vol.27, pp.118-125, 1974.
DOI : 10.1016/0022-0248(74)90424-2

J. W. Hutchinson and Z. Suo, Mixed Mode Cracking in Layered Materials, Advances in Applied Mechanics, pp.64-191, 1992.
DOI : 10.1016/S0065-2156(08)70164-9

Z. Wu, K. Nonaka, Y. Kawai, T. Asai, F. Ponce et al., Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates, Applied Physics Express, vol.3, issue.11, p.111003, 2010.
DOI : 10.1143/APEX.3.111003

W. Cho, J. A. Liu, L. J. Smart, and . Schowalter, Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodes, Applied Physics Letters, vol.91, p.51116, 2007.

J. Tersoff and F. K. Legoues, Competing relaxation mechanisms in strained layers, Physical Review Letters, vol.62, issue.22, pp.3570-3574, 1994.
DOI : 10.1063/1.108842

B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li et al., Correlation between optoelectronic and structural properties and epilayer thickness of AlN, Applied Physics Letters, vol.90, issue.24, p.241101, 2007.
DOI : 10.1063/1.1633965

X. Li, S. Sundaram, Y. Gmili, F. Genty, S. Bouchoule et al., MOVPE grown periodic AlN/BAlN heterostructure with high boron content, Journal of Crystal Growth, vol.414, pp.119-122, 2015.
DOI : 10.1016/j.jcrysgro.2014.09.030

URL : https://hal.archives-ouvertes.fr/hal-01170572

R. Fischer, Y. Juday, T. Huang, J. Y. Li, F. Huang et al., Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions, Journal of Crystal Growth, vol.388, pp.143-149, 2014.

X. Li, S. Sundaram, Y. E. Gmili, T. Moudakir, F. Genty et al., BAlN thin layers for deep UV applications, physica status solidi (a), vol.298, issue.239, pp.745-750, 2015.
DOI : 10.1016/j.jcrysgro.2006.10.064

URL : https://hal.archives-ouvertes.fr/hal-01109577

S. Chuang and C. Chang, k???p method for strained wurtzite semiconductors, Physical Review B, vol.10, issue.4, pp.2491-2504, 1996.
DOI : 10.1116/1.585897

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl et al., Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells, Applied Physics Letters, vol.100, issue.2, p.21101, 2012.
DOI : 10.1002/9783527610723.ch3

H. Murotani, Y. Yamada, H. Miyake, and K. Hiramatsu, Silicon concentration dependence of optical polarization in AlGaN epitaxial layers, Applied Physics Letters, vol.98, issue.2, p.21910, 2011.
DOI : 10.1063/1.3374444

Z. Bryan, I. Bryan, S. Mita, J. Tweedie, Z. Sitar et al., Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates, Applied Physics Letters, vol.106, issue.23, p.232101, 2015.
DOI : 10.1103/PhysRevB.54.2491

J. Baur, K. Maier, M. Kunzer, U. Kaufmann, and J. Schneider, Determination of the GaN/AlN band offset via the (???/0) acceptor level of iron, Applied Physics Letters, vol.47, issue.17, pp.2211-2213, 1994.
DOI : 10.1103/PhysRevB.35.6182

M. B. Nardelli, K. Rapcewicz, and J. Bernholc, Strain effects on the interface properties of nitride semiconductors, Physical Review B, vol.55, issue.12, p.7323, 1997.
DOI : 10.1103/PhysRevB.55.R7323

N. Binggeli, P. Ferrara, and A. Baldereschi, Band-offset trends in nitride heterojunctions, Physical Review B, vol.83, issue.24, p.245306, 2001.
DOI : 10.1103/PhysRevLett.83.2006

F. Bernardini and V. Fiorentini, Macroscopic polarization and band offsets at nitride heterojunctions, Physical Review B, vol.77, issue.16, p.9427, 1998.
DOI : 10.1103/PhysRevLett.77.103

URL : http://arxiv.org/pdf/cond-mat/9712245

G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Valence???band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x???ray photoemission spectroscopy, Applied Physics Letters, vol.8, issue.18, pp.2541-2453, 1996.
DOI : 10.1063/1.116177

J. Hopfield, Fine structure in the optical absorption edge of anisotropic crystals, Journal of Physics and Chemistry of Solids, vol.15, issue.1-2, pp.97-107, 1960.
DOI : 10.1016/0022-3697(60)90105-0

A. Voss and . Ougazzaden, AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm, Optical Materials Express, vol.5, issue.2, pp.380-392, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01108085

M. Shiojiri, C. C. Chuo, J. T. Hsu, J. R. Yang, and H. Saijo, Structure and formation mechanism of V defects in multiple InGaN???GaN quantum well layers, Journal of Applied Physics, vol.99, issue.7, p.73505, 2006.
DOI : 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I

H. Tsai, T. Wang, J. Yang, C. Chuo, J. Hsu et al., Observation of V Defects in Multiple InGaN, GaN Quantum Well Layers Materials Transactions, vol.48, issue.5, pp.894-898, 2007.

L. C. Le, D. G. Zhao, D. S. Jiang, L. Li, L. L. Wu et al., Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes, Applied Physics Letters, vol.101, issue.25, p.252110, 2012.
DOI : 10.1002/pssc.200405050

F. Lin, N. Xiang, P. Chen, S. Y. Chow, and S. J. Chua, Investigation of the V-pit related morphological and optical properties of InGaN???GaN multiple quantum wells, Journal of Applied Physics, vol.103, issue.4, p.43508, 2008.
DOI : 10.1063/1.2214211

A. M. Armstrong, M. H. Crawford, and D. D. Koleske, Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength, Applied Physics Express, vol.7, issue.3, p.32101, 2014.
DOI : 10.7567/APEX.7.032101

A. Leboeuf, J. W. Ebong, E. B. Kretchmer, S. Stokes, A. E. Arthur et al., Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes Solid State Lighting II, Proceedings of SPIE, vol.4776, pp.105-113, 2002.

M. S. Suh and . Jeong, Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells, Journal of Physics D: Applied Physics, vol.41, p.132006, 2008.

M. Moseley, A. Allerman, M. Crawford, J. J. Wierer, M. Smith et al., Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes, Journal of Applied Physics, vol.116, issue.5, p.53104, 2014.
DOI : 10.1007/s11664-002-0091-x

M. Shatalov, W. Sun, R. Jain, A. Lunev, X. Hu et al., High power AlGaN ultraviolet light emitters, High power AlGaN ultraviolet light emitters, p.84007, 2014.
DOI : 10.1088/0268-1242/29/8/084007

N. Kamata, A. Z. Islam, M. Julkarnain, N. Murakoshi, T. Fukuda et al., Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence, physica status solidi (b), vol.87, issue.89, pp.936-939, 2015.
DOI : 10.1103/PhysRev.87.387

X. Li, G. L. Gac, S. Bouchoule, Y. Gmili, G. Patriarche et al., Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm, Journal of Crystal Growth, vol.432, pp.37-44, 2015.
DOI : 10.1016/j.jcrysgro.2015.09.013

URL : https://hal.archives-ouvertes.fr/hal-01212591

Z. Liliental-weber, Derivation of growth mechanism of nano-defects in GaN from TEM data, Journal of Electron Microscopy, vol.49, issue.2, pp.339-348, 2000.
DOI : 10.1093/oxfordjournals.jmicro.a023814

Z. Liliental-weber, Y. Chen, S. Ruvimov, and J. Washburn, Formation Mechanism of Nanotubes in GaN, Physical Review Letters, vol.35, issue.25, pp.2835-2838, 1997.
DOI : 10.1143/JJAP.35.L1648

M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond et al., Temperature quenching of photoluminescence intensities in undoped and doped GaN, Journal of Applied Physics, vol.86, issue.7, pp.3721-3728, 1999.
DOI : 10.1063/1.112309

J. Bai, Q. Wang, and T. Wang, Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes, physica status solidi (a), vol.18, issue.3, pp.477-480, 2012.
DOI : 10.1364/OE.18.007664

P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng et al., Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes, Optics Express, vol.22, issue.S2, pp.320-327, 2014.
DOI : 10.1364/OE.22.00A320

M. A. Reshchikov and H. Morko, Luminescence properties of defects in GaN, Journal of Applied Physics, vol.680, issue.6, p.61301, 2005.
DOI : 10.1063/1.1533857

A. Y. Polyakov and I. Lee, Deep traps in GaN-based structures as affecting the performance of GaN devices, Materials Science and Engineering: R: Reports, vol.94, pp.1-56, 2015.
DOI : 10.1016/j.mser.2015.05.001

M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo et al., Advances in group III-nitride-based deep UV light-emitting diode technology, Semiconductor Science and Technology, vol.26, issue.1, p.14036, 2010.
DOI : 10.1088/0268-1242/26/1/014036

A. V. Tikhonravov, M. K. Trubetskov, A. A. Tikhonravov, and A. Duparré, Effects of interface roughness on the spectral properties of thin films and multilayers, Applied Optics, vol.42, issue.25, pp.5140-5148, 2003.
DOI : 10.1364/AO.42.005140

A. Hafaiedh and N. Bouarissa, Energy gaps and optical properties for the quaternary AlxGayIn1???x???yN matched to GaN substrate, Materials Chemistry and Physics, vol.115, issue.1, pp.122-125, 2009.
DOI : 10.1016/j.matchemphys.2008.11.036

P. Hervé and L. Vandamme, General relation between refractive index and energy gap in semiconductors, Infrared Physics & Technology, vol.35, issue.4, pp.609-615, 1994.
DOI : 10.1016/1350-4495(94)90026-4

. Olson, Photoluminescence Characterization of AIGaN-GaN Pseudomorphic Quantum Wells and Calculation of Strain Induced Bandgap Shifts, Journal of Electronic Materials, vol.21, issue.6, pp.5-8, 1992.

R. M. Wentzcovitch, K. J. Chang, and M. L. Cohen, Electronic and structural properties of BN and BP, Physical Review B, vol.1, issue.2, pp.1071-1079, 1986.
DOI : 10.1103/PhysRevB.1.3458

H. Akamaru, A. Onodera, T. Endo, and O. Mishima, Pressure dependence of the optical-absorption edge of AlN and graphite-type BN, Journal of Physics and Chemistry of Solids, vol.63, issue.5, pp.887-894, 2002.
DOI : 10.1016/S0022-3697(01)00244-X

P. Perlin, I. Gorczyca, N. E. Christensen, I. Grzegory, H. Teisseyre et al., Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties, Physical Review B, vol.58, issue.23, pp.13307-13313, 1992.
DOI : 10.1063/1.336070

. Gaskill, Photoluminescence from wurtzite GaN under hydrostatic pressure, Applied Physics Letters, vol.67, issue.3, pp.380-382, 1995.

V. Tasco, I. Tarantini, A. Campa, A. Massaro, T. Stomeo et al., GaN/AlGaN microcavities for enhancement of non linear optical effects, Photonic Crystal Materials and Devices IX, Proc. of SPIE, p.77131, 2011.

H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata, and Y. Aoyagi, Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells, Applied Physics Letters, vol.1, issue.9, pp.1589-1591, 2002.
DOI : 10.1103/PhysRevB.56.R10024

H. Hirayama, S. Fujikawa, and N. Kamata, Recent Progress in AlGaN-Based Deep-UV LEDs, Electronics and Communications in Japan, vol.80, issue.9, pp.1-8, 2015.
DOI : 10.1063/1.1456951

D. B. Li, M. Aoki, T. Katsuno, H. Miyake, K. Hiramatsu et al., Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells, Journal of Crystal Growth, vol.298, pp.500-503, 2007.
DOI : 10.1016/j.jcrysgro.2006.10.197