K. .. Mesure, B. , and .. , 77 3-2-2, Processus no2: Mesure contrainte tension-température, p.0

I. Processus-no3, Mesure contrainte tension (BS) à 300, p.5

S. Mis and R. , 2-1. Introductlon.... 2-2. Expression de la tension de grille

C. Noe, ss \ oit Ntr(E) est la densité d'états par unité d'énergie et par unité de surface

L. En-remplaçant and . Relations, B-57) dans cette équation (B-58), le signal DLTS [Y=^C(tr)-AC(tr)] est ainsi donné par: y = --c'(t' )-[, E))Nss (E) dE e.NpC; JEr

. Si-la-densité, E) varie peu dans un intervalle d'énergie de 3kT autour de E+, on peut sortir Nss(E) de I'intégrale en prenant sa valeur en E*. En outre, à toute température pour laquelle S(en) n'a une valeur non nulle que dans l,intervalle [EpS, EFSm], on peut étendre l'intégration au domaine I -oo, + co, Nss

. Dans-le-cas-d, un continuum d'états d'interface, le signal de sortie de la détection synchrone Y est donné par la relation, ou: et : C(Vp) est la capacité de repos sous polarisation inverse Vp

C. R. Castagne, J. P. Duchemin, M. Gloanec, . Ch, and . Rukelhard, Circuits intégrés en Arseniure de, Gallium, p.24

M. Okamura and T. Kobayashi, Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET, Japanese Journal of Applied Physics, vol.19, issue.10, p.599, 1980.
DOI : 10.1143/JJAP.19.L599

L. G. Meiners, D. L. Lille, and D. A. Collins, Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t., Electronics Letters, vol.15, issue.18, p.578, 1979.
DOI : 10.1049/el:19790415

J. Wager, S. J. Owen, and S. J. Prasard, InP MISFET Technology, Journal of The Electrochemical Society, vol.134, issue.1, p.160, 1987.
DOI : 10.1149/1.2100399

H. Nagai and Y. Noguchi, Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfaces, Applied Physics Letters, vol.33, issue.4, p.312, 1978.
DOI : 10.1063/1.89745

Y. Shinoda and T. Kobayashi, Solid-state Electronics 25, I I, p.9, 1982.

K. P. Pande and G. Gutierrez, Channel mobility enhancement in InP metal???insulator???semiconductor field???effect transistors, Applied Physics Letters, vol.113, issue.4, p.416, 1985.
DOI : 10.1016/0040-6090(84)90017-8

W. Schockley, On the Surface States Associated with a Periodic Potential, Physical Review, vol.50, issue.4, p.317, 1939.
DOI : 10.1103/PhysRev.50.760

I. Tersoff, Schottky Barrier Heights and the Continuum of Gap States, Physical Review Letters, vol.34, issue.6, p.465, 1984.
DOI : 10.1063/1.1729121

Y. Hirayama, F. Arai, and T. Sugano, Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide, Thin Solid Films, vol.103, issue.1-3, p.71, 1983.
DOI : 10.1016/0040-6090(83)90426-1

P. L. Giles, P. Davies, and N. B. Hasdell, The growth of epitaxial InP by the chloride process in nitrogen and in the presence of phosphine, Journal of Crystal Growth, vol.61, issue.3, p.695, 1983.
DOI : 10.1016/0022-0248(83)90201-4

H. Hasegawa and T. Sawada, Dynamic properties of interface???state bands in GaAs anodic MOS system, Journal of Vacuum Science and Technology, vol.16, issue.5, p.1478, 1979.
DOI : 10.1116/1.570226

W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, New and unified model for Schottky barrier and III???V insulator interface states formation, Journal of Vacuum Science and Technology, vol.16, issue.5, p.1422, 1979.
DOI : 10.1116/1.570215

T. E. Kazior, J. Lagowski, and H. C. Gatos, The electrical behavior of GaAs???insulator interfaces: A discrete energy interface state model, Journal of Applied Physics, vol.54, issue.5, p.2533, 1983.
DOI : 10.1016/0038-1101(73)90124-X

D. C. Cameron and B. J. Foreman, The correlation of channel mobility with interface state measurements on InP MOSFET structures, Solid-State Electronics, vol.27, issue.4, p.305, 1984.
DOI : 10.1016/0038-1101(84)90162-X

T. Sawada, H. Hasegawa, and H. Ohno, Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator, Thin Solid Films, vol.103, issue.1-3, p.107, 1983.
DOI : 10.1016/0040-6090(83)90429-7

D. L. Lile and M. J. Tayior, The effect of interfacial traps on the stability of insulated gate devices on InP, Journal of Applied Physics, vol.33, issue.1, p.260, 1983.
DOI : 10.1063/1.90495

P. Van-staa, H. Rombach, and R. Kassing, Time???dependent response of interface states in indium phosphide metal???insulator???semiconductor capacitors investigated with constant???capacitance deep???level transient spectroscopy, Journal of Applied Physics, vol.12, issue.7, p.4014, 1983.
DOI : 10.1016/0376-4583(81)90094-7

M. Okamura and T. Kobayashi, Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET, Japanese Journal of Applied Physics, vol.19, issue.11, p.2143, 1980.
DOI : 10.1143/JJAP.19.2143

S. M. Goodnick, T. Hwang, and C. W. Wilmsen, New model for slow current drift in InP metal???insulator???semiconductor field???effect transistors, Applied Physics Letters, vol.1033, issue.4, p.453, 1984.
DOI : 10.1088/0022-3727/4/10/319

J. A. Van-vechten and J. F. Wager, Consequences of anion vacancy nearest???neighbor hopping in III???V compound semiconductors: Drift in InP metal???insulator???semiconductor field???effect transistors, Journal of Applied Physics, vol.113, issue.6, p.1956, 1985.
DOI : 10.1016/0079-6786(75)90005-9

L. G. Meiners, The Effect of Bulk Traps on the InP Accumulation-Type MISFET, Journal of The Electrochemical Society, vol.133, issue.2, p.372, 1986.
DOI : 10.1149/1.2108582

C. H. Kim, B. D. Choe, H. Lim, L. K. Han, K. N. Lee et al., Study of charge trapping instabilities in a silicon???nitride/indium???phosphide metal???insulator???semiconductor structure by the constant???capacitance method, Journal of Applied Physics, vol.45, issue.10, p.4743, 1992.
DOI : 10.1063/1.99438

L. He, H. Hasegawa, T. Sawada, and H. Ohno, curves based on the disorder???induced gap???state model, Journal of Applied Physics, vol.38, issue.6, p.2120
DOI : 10.1063/1.92208

J. G. Simmons and L. S. Wei, Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps, Solid-State Electronics, vol.16, issue.1, p.53, 1973.
DOI : 10.1016/0038-1101(73)90125-1

T. Y. Chou and M. S. Lin, ???GaAs metal???insulator???semiconductor system, Journal of Applied Physics, vol.27, issue.11, p.3778, 1986.
DOI : 10.1109/T-ED.1980.19986

X. Zhang, Solid-State Electronics, p.1497, 1992.

L. Sawada and H. Hasegawa, Interface state band between GaAs and its anodic native oxide, Thin Solid Films, vol.56, issue.1-2, p.183, 1979.
DOI : 10.1016/0040-6090(79)90063-4

J. G. Hwu, M. J. Jeng, W. S. Wang, and Y. K. Tu, ) capacitors due to leakage current through tantalum oxide, Journal of Applied Physics, vol.132, issue.10, p.4277
DOI : 10.1109/T-ED.1968.16554

T. Nguyen, S. V. Nguyen, and D. M. Dobuzinsky, Evidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride, Applied Physics Letters, vol.45, issue.15, p.2103
DOI : 10.1063/1.95136

I. Prasad and R. S. Srivastava, Generation and annihilation of traps in metal???oxide???semiconductor devices after negative air corona charging, Journal of Applied Physics, vol.126, issue.1, p.359, 1993.
DOI : 10.1063/1.103971

H. Preier, CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE, Applied Physics Letters, vol.7, issue.12, p.361, 1967.
DOI : 10.1016/0038-1101(65)90046-8

B. Bouchiki, G. Valmont, C. Michel, and S. Ravelet, Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance, Thin Solid Films, vol.150, issue.2-3, p.227
DOI : 10.1016/0040-6090(87)90094-0

8. D. Quan, A. L. Bloa, H. Hbib, O. Bonnaud, J. Meinnel et al., Couches minces d'oxynitrure de phosphore. Application aux structures MIS sur InP, Revue de Physique Appliqu??e, vol.48, issue.B, p.545, 1989.
DOI : 10.1051/rphysap:01989002405054500

URL : https://hal.archives-ouvertes.fr/jpa-00246080

T. Y. Chou and M. S. Lin, ???GaAs metal???insulator???semiconductor system, Journal of Applied Physics, vol.27, issue.11, p.3778, 1986.
DOI : 10.1109/T-ED.1980.19986

D. S. Mui, J. Reed, D. Biswas, and H. Morkoç, A new circuit model for tunneling related trapping at insulator???semiconductor interfaces in accumulation, Journal of Applied Physics, vol.30, issue.2, p.553, 1992.
DOI : 10.1063/1.1657043

P. Pande and E. D. Gutierrez, Channel mobility enhancement in InP metal???insulator???semiconductor field???effect transistors, Applied Physics Letters, vol.113, issue.4, p.416, 1985.
DOI : 10.1016/0040-6090(84)90017-8

A. Astito, A. Foucaran, G. Bastide, M. Rouzeyre, J. L. Leclercq et al., ???type InP, Journal of Applied Physics, vol.63, issue.5, p.2584, 1991.
DOI : 10.1063/1.340482

A. Bath, O. Baehr, M. Barrada, B. Lepley, and P. , Plasma enhanced chemical vapour deposition of boron nitride onto InP, Thin Solid Films, vol.241, issue.1-2, p.278
DOI : 10.1016/0040-6090(94)90441-3

C. R. Zeisse and J. , ???indium???phosphide???silicon???oxide system, Journal of Vacuum Science and Technology, vol.16, issue.5, p.1466, 1979.
DOI : 10.1116/1.570223

P. Klopfeinstein, G. Bastide, M. Rouzeyre, M. Gendry, and J. Duret, ???type InP, Journal of Applied Physics, vol.31, issue.1, p.150, 1988.
DOI : 10.1063/1.89774

A. Etchells and C. W. Fischer, Interface state density and oxide charge measurements on the metal???anodic???oxide???InSb system, Journal of Applied Physics, vol.41, issue.10, p.4605, 1976.
DOI : 10.1063/1.1713660

K. Lehovec and A. Slobodskoy, Impedance of semiconductor-insulator-metal capacitors, Solid-State Electronics, vol.7, issue.1, p.59, 1964.
DOI : 10.1016/0038-1101(64)90122-4

Y. H. Jeong, S. K. Jo, B. H. Lee, and T. Sugano, gate insulators, IEEE Electron Device Letters, vol.16, issue.3, p.109, 1995.
DOI : 10.1109/55.363240

A. Bath, P. J. Van-der-put, J. G. Becht, J. Schooman, and B. Lepley, Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP, Journal of Applied Physics, vol.131, issue.8, p.4366
DOI : 10.1149/1.2115385

D. M. Schleich, W. Y. Flai, and A. Lam, Transformation of Organometallics into Common and Exotic Materials: Design and Activation, NATO ASI SER. E

A. Allen, Solid-State Electronics, p.223, 1992.

L. He, H. Hasegawa, T. Sawada, and H. Ohno, curves based on the disorder???induced gap???state model, Journal of Applied Physics, vol.38, issue.6, p.2120, 1987.
DOI : 10.1063/1.92208

E. H. Mcolliaru and J. R. Brews, MOS (Metal Oxide Semiconduaor) Physics and technology, 1982.

3. E. Snow, A. S. Grovs, B. E. Deal, and C. T. Sah, Ion Transport Phenomena in Insulating Films, Journal of Applied Physics, vol.48, issue.5, p.1664, 1963.
DOI : 10.1063/1.1729182

L. G. Meiners, dielectric layers on InP, Journal of Vacuum Science and Technology, vol.19, issue.3, p.373, 1981.
DOI : 10.1116/1.571066

C. Y. Wu, R. S. Huang, M. S. Lin, and J. Electrochem, Soc: Solid-State Science and Technology, p.1200, 1987.

P. Van-staa, H. Rombach, and R. Kassing, Time???dependent response of interface states in indium phosphide metal???insulator???semiconductor capacitors investigated with constant???capacitance deep???level transient spectroscopy, Journal of Applied Physics, vol.12, issue.7, p.4014, 1983.
DOI : 10.1016/0376-4583(81)90094-7

M. Okamura and T. Kobayashi, Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET, Japanese Journal of Applied Physics, vol.19, issue.11, p.2143, 1980.
DOI : 10.1143/JJAP.19.2143

S. M. Goodnich, T. Hwang, and C. W. Wilmsen, ) ï221 I. A. Van Vechten et, Appl. Phys. Lett J. F. Wager, I. Appl Phys, vol.44, issue.57, p.4531956, 1984.

M. Ephrath and D. J. Dmaria, Solid-State Technol, p.182, 1981.

L. G. Meiners, Indirect plasma deposition of silicon dioxide, Journal of Vacuum Science and Technology, vol.21, issue.2, p.655, 1982.
DOI : 10.1116/1.571807

K. P. Pande and V. K. Naiç, ???InP interface, Journal of Applied Physics, vol.44, issue.8, p.3109, 1984.
DOI : 10.1016/0040-6090(83)90430-3

R. W. Sykes and T. Kobayashi, p-type InP/Langmuir film m.i.s. diodes, IEE Proceedings I Solid State and Electron Devices, vol.127, issue.3, p.137, 1980.
DOI : 10.1049/ip-i-1.1980.0026

]. T. Kobayashi, M. Okamur4, E. Yamaguchi, Y. Shinoda, and Y. Hirota, deposition temperature on inversion???mode InP metal???insulator???semiconductor field???effect transistor, Journal of Applied Physics, vol.15, issue.10, p.6434
DOI : 10.1049/el:19790363

L. G. Meiners, Capacitance-voltage and surface photovoltage measurements of pyrolytically deposited SiO2 on InP, Thin Solid Films, vol.56, issue.1-2, p.201, 1979.
DOI : 10.1016/0040-6090(79)90064-6

]. L. Meiners, dielectric layers on InP, Journal of Vacuum Science and Technology, vol.19, issue.3, p.373, 1981.
DOI : 10.1116/1.571066

B. Bouchiki, G. Valmont, C. Michel, and S. Ravelet, Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance, Thin Solid Films, vol.150, issue.2-3, p.227
DOI : 10.1016/0040-6090(87)90094-0

L. Sawada and H. , Hasegaw4 Thin Solid Films, p.183, 1979.

D. S. Mui, J. Red, D. Biswas, and H. Morkoç, A new circuit model for tunneling related trapping at insulator???semiconductor interfaces in accumulation, Journal of Applied Physics, vol.30, issue.2, p.553, 1992.
DOI : 10.1063/1.1657043

B. Bayraktaroglu and R. L. Johnsoq, Silicon???nitride???gallium???arsenide MIS structures produced by plasma enhanced deposition, Journal of Applied Physics, vol.50, issue.5, p.3515, 1981.
DOI : 10.1063/1.91010

C. R. Zeisse, L. J. Messick, D. Lile, and J. , Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide, Journal of Vacuum Science and Technology, vol.14, issue.4, p.957, 1977.
DOI : 10.1116/1.569399

B. Sautreuil, B. Bailly, R. Blanchet, and M. Garrigues, Influence de la technique de d??p??t d'isolant et des modes de d??capage du semiconducteur sur les propri??t??s ??lectriques de structures m??tal-Al 2O3-InP, Revue de Physique Appliqu??e, vol.53, issue.12, p.769, 1983.
DOI : 10.1051/rphysap:019830018012076900

H. Preier, CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE, Applied Physics Letters, vol.7, issue.12, p.361, 1967.
DOI : 10.1016/0038-1101(65)90046-8

T. Sawada and H. Hasegawa, Interface state band between GaAs and its anodic native oxide, Thin Solid Films, vol.56, issue.1-2, p.183, 1979.
DOI : 10.1016/0040-6090(79)90063-4

S. Los and S. Kochowski, Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures, Thin Solid Films, vol.165, issue.1, p.21, 1988.
DOI : 10.1016/0040-6090(88)90675-X

T. Sawada and H. Hasegawa, Small-Signal Admittance Study of GaAs Anodic MOS System, Physica Status Solidi (a), vol.33, issue.2, p.689, 1979.
DOI : 10.1002/j.1538-7305.1967.tb01727.x

T. Y. Chou and M. S. Lin, ???GaAs metal???insulator???semiconductor system, Journal of Applied Physics, vol.27, issue.11, p.3778, 1986.
DOI : 10.1109/T-ED.1980.19986

L. M. Terman, Solid-State Electron, p.285, 1962.

A. Wada, A. N. Majerfeld, and . Choudhury, Interaction of deep???level traps with the lowest and upper conduction minima in InP, Journal of Applied Physics, vol.33, issue.1, p.423
DOI : 10.1063/1.90233

H. Lim, G. Sagnes, G. Bastide, and M. Rouzeyere, ???type InP, Journal of Applied Physics, vol.45, issue.4, p.3317
DOI : 10.1049/el:19810040

M. Bouabdellati, Thèse de doctorat de l'université de lr',etz, Mat. Res. soc. syrnp. Proc, vol.104, p.491, 1988.

S. Guha and F. Hasegawa, Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide, Solid-State Electronics, vol.20, issue.1, p.27, 1977.
DOI : 10.1016/0038-1101(77)90029-6

]. A. Iliadis, S. C. Laih, and E. A. Marrin, ???InP grown by molecular beam epitaxy, Applied Physics Letters, vol.14, issue.15, p.1436, 1989.
DOI : 10.1049/el:19780276

T. Sugino, H. Ninomiya, T. Yamada, and J. Shirafuji, ???InP treated with hydrogen plasma, Applied Physics Letters, vol.30, issue.10, p.1226, 1992.
DOI : 10.1063/1.92386

Y. H. Jeong, S. Takagi, F. Arai, and T. Sugano, etching and phosphorus???nitride deposition, Journal of Applied Physics, vol.4, issue.6, p.2370
DOI : 10.1109/EDL.1983.25666

C. H. Kim, B. D. Choe, H. Lim, I. K. Han, J. I. Lee et al., Study of charge trapping instabilities in a silicon???nitride/indium???phosphide metal???insulator???semiconductor structure by the constant???capacitance method, Journal of Applied Physics, vol.45, issue.10, p.4743
DOI : 10.1063/1.99438

D. Goguenhein, D. Vuillaume, G. Vincent, and N. M. Johnson, Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap???filling experiment: The charge???potential feedback effect, Journal of Applied Physics, vol.38, issue.3, p.1104
DOI : 10.1016/0079-6816(83)90006-0

B. K. Ip, K. C. Kao, and D. J. Thomson, Charges and defects in SiO2 films deposited by plasma-enhanced chemical vapor deposition at low temperatures, Solid-State Electronics, vol.34, issue.2, p.123, 1991.
DOI : 10.1016/0038-1101(91)90077-C

K. S. Krisch, B. J. Gross, and C. G. Sodini, Positive???charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics, Journal of Applied Physics, vol.20, issue.4, p.2185, 1991.
DOI : 10.1109/55.719

F. P. Heiman and G. Warfield, The effects of oxide traps on the MOS capacitance, IEEE Transactions on Electron Devices, vol.12, issue.4, p.167, 1965.
DOI : 10.1109/T-ED.1965.15475

H. Koelman and H. C. De-graaff, Drift phenomena in CdSe thin film FET's, Solid-State Electronics, vol.10, issue.10, p.997, 1967.
DOI : 10.1016/0038-1101(67)90149-9

L. M. Terman, Solid-State Electron, p.285, 1962.

M. U3l and . Kuhn, Solid-State Electron, 1970.

K. Lehovec and A. Slobodskoy, Solid-State Elect, p.59, 1964.

A. Azim-khan, J. A. Woollam, and Y. Chung, Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal???insulator???semiconductor structures, Journal of Applied Physics, vol.27, issue.12, p.4299, 1984.
DOI : 10.1109/T-ED.1980.19986

K. Lehovec, FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES, Applied Physics Letters, vol.35, issue.2, p.48, 1966.
DOI : 10.1063/1.1754385

[. Shulz and N. M. Johnson, Transient capacitance measurements of hole emission from interface states in MOS structures, Applied Physics Letters, vol.31, issue.9, p.622, 1977.
DOI : 10.1016/0039-6028(74)90251-9

D. T. Clark and J. Fok, Surface modification of InP by plasma techniques using hydrogen and oxygen, Thin Solid Films, vol.78, issue.3, p.271
DOI : 10.1016/0040-6090(89)90593-2

C. R. Crowell and S. Alipanahi, Solid-State Elect, p.25

A. Bath, P. J. Van-der-put, J. G. Becht, J. Schooman, and B. Lepley, Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP, Journal of Applied Physics, vol.131, issue.8, p.4366
DOI : 10.1149/1.2115385

M. Hirota, T. Okamura, and . Kobayashi, The effects of annealing metal???insulator???semiconductor diodes employing a thermal nitride???InP interface, Journal of Applied Physics, vol.50, issue.1, p.536
DOI : 10.1016/0040-6090(79)90048-8

D. Schleich, W. Y. Flai, and A. Lam, Transformation of Organometallics into Common and Exotic Materials: Design and Activation, NATO ASI SER. E. Edited bv R.M

L. He, H. Hasegawa, T. Sawada, and H. Ohno, curves based on the disorder???induced gap???state model, Journal of Applied Physics, vol.38, issue.6, p.2120
DOI : 10.1063/1.92208

G. Weimann, Thin Solid Films, p.173, 1979.

[. Résumé, e travail présenté dans ce mémoire concerne la mise en oeuvre de méthodes de caractér;r;ai électriques permettant d'évalucr la qualité des structures Métal/IsolanVsemiconducteur (MIS: AuAEN/InP_l t mieux comprendre certains problèmes rcncontrés. [aes structures étudiécs ont été élaborées par dépot chi:n en phase vapeur assisté par plasma, PECVD), les substrats d'lnP étant placés soit dans le pt: (structures DP) soit hors de la zone plasma (structures HP)

. Enfin, une étude de la densit4 d'riiats d'interfacc N*, par les méthodes de DLTS et Terman a été fa Pour les slructures HP, la méthode de Terman a conduit à un minimum de N* d'environ 2x10lr cm-zeV-l. Nos résultats mcttent en évidence