77 3-2-2, Processus no2: Mesure contrainte tension-température, p.0 ,
Mesure contrainte tension (BS) à 300, p.5 ,
2-1. Introductlon.... 2-2. Expression de la tension de grille ,
ss \ oit Ntr(E) est la densité d'états par unité d'énergie et par unité de surface ,
B-57) dans cette équation (B-58), le signal DLTS [Y=^C(tr)-AC(tr)] est ainsi donné par: y = --c'(t' )-[, E))Nss (E) dE e.NpC; JEr ,
E) varie peu dans un intervalle d'énergie de 3kT autour de E+, on peut sortir Nss(E) de I'intégrale en prenant sa valeur en E*. En outre, à toute température pour laquelle S(en) n'a une valeur non nulle que dans l,intervalle [EpS, EFSm], on peut étendre l'intégration au domaine I -oo, + co, Nss ,
un continuum d'états d'interface, le signal de sortie de la détection synchrone Y est donné par la relation, ou: et : C(Vp) est la capacité de repos sous polarisation inverse Vp ,
Circuits intégrés en Arseniure de, Gallium, p.24 ,
Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET, Japanese Journal of Applied Physics, vol.19, issue.10, p.599, 1980. ,
DOI : 10.1143/JJAP.19.L599
Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t., Electronics Letters, vol.15, issue.18, p.578, 1979. ,
DOI : 10.1049/el:19790415
InP MISFET Technology, Journal of The Electrochemical Society, vol.134, issue.1, p.160, 1987. ,
DOI : 10.1149/1.2100399
Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfaces, Applied Physics Letters, vol.33, issue.4, p.312, 1978. ,
DOI : 10.1063/1.89745
Solid-state Electronics 25, I I, p.9, 1982. ,
Channel mobility enhancement in InP metal???insulator???semiconductor field???effect transistors, Applied Physics Letters, vol.113, issue.4, p.416, 1985. ,
DOI : 10.1016/0040-6090(84)90017-8
On the Surface States Associated with a Periodic Potential, Physical Review, vol.50, issue.4, p.317, 1939. ,
DOI : 10.1103/PhysRev.50.760
Schottky Barrier Heights and the Continuum of Gap States, Physical Review Letters, vol.34, issue.6, p.465, 1984. ,
DOI : 10.1063/1.1729121
Mesa- and planar-type InP metal/insulator/ semiconductor field effect transistors with plasma anodic Al2O3 gate oxide, Thin Solid Films, vol.103, issue.1-3, p.71, 1983. ,
DOI : 10.1016/0040-6090(83)90426-1
The growth of epitaxial InP by the chloride process in nitrogen and in the presence of phosphine, Journal of Crystal Growth, vol.61, issue.3, p.695, 1983. ,
DOI : 10.1016/0022-0248(83)90201-4
Dynamic properties of interface???state bands in GaAs anodic MOS system, Journal of Vacuum Science and Technology, vol.16, issue.5, p.1478, 1979. ,
DOI : 10.1116/1.570226
New and unified model for Schottky barrier and III???V insulator interface states formation, Journal of Vacuum Science and Technology, vol.16, issue.5, p.1422, 1979. ,
DOI : 10.1116/1.570215
The electrical behavior of GaAs???insulator interfaces: A discrete energy interface state model, Journal of Applied Physics, vol.54, issue.5, p.2533, 1983. ,
DOI : 10.1016/0038-1101(73)90124-X
The correlation of channel mobility with interface state measurements on InP MOSFET structures, Solid-State Electronics, vol.27, issue.4, p.305, 1984. ,
DOI : 10.1016/0038-1101(84)90162-X
Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator, Thin Solid Films, vol.103, issue.1-3, p.107, 1983. ,
DOI : 10.1016/0040-6090(83)90429-7
The effect of interfacial traps on the stability of insulated gate devices on InP, Journal of Applied Physics, vol.33, issue.1, p.260, 1983. ,
DOI : 10.1063/1.90495
Time???dependent response of interface states in indium phosphide metal???insulator???semiconductor capacitors investigated with constant???capacitance deep???level transient spectroscopy, Journal of Applied Physics, vol.12, issue.7, p.4014, 1983. ,
DOI : 10.1016/0376-4583(81)90094-7
Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET, Japanese Journal of Applied Physics, vol.19, issue.11, p.2143, 1980. ,
DOI : 10.1143/JJAP.19.2143
New model for slow current drift in InP metal???insulator???semiconductor field???effect transistors, Applied Physics Letters, vol.1033, issue.4, p.453, 1984. ,
DOI : 10.1088/0022-3727/4/10/319
Consequences of anion vacancy nearest???neighbor hopping in III???V compound semiconductors: Drift in InP metal???insulator???semiconductor field???effect transistors, Journal of Applied Physics, vol.113, issue.6, p.1956, 1985. ,
DOI : 10.1016/0079-6786(75)90005-9
The Effect of Bulk Traps on the InP Accumulation-Type MISFET, Journal of The Electrochemical Society, vol.133, issue.2, p.372, 1986. ,
DOI : 10.1149/1.2108582
Study of charge trapping instabilities in a silicon???nitride/indium???phosphide metal???insulator???semiconductor structure by the constant???capacitance method, Journal of Applied Physics, vol.45, issue.10, p.4743, 1992. ,
DOI : 10.1063/1.99438
curves based on the disorder???induced gap???state model, Journal of Applied Physics, vol.38, issue.6, p.2120 ,
DOI : 10.1063/1.92208
Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps, Solid-State Electronics, vol.16, issue.1, p.53, 1973. ,
DOI : 10.1016/0038-1101(73)90125-1
???GaAs metal???insulator???semiconductor system, Journal of Applied Physics, vol.27, issue.11, p.3778, 1986. ,
DOI : 10.1109/T-ED.1980.19986
Solid-State Electronics, p.1497, 1992. ,
Interface state band between GaAs and its anodic native oxide, Thin Solid Films, vol.56, issue.1-2, p.183, 1979. ,
DOI : 10.1016/0040-6090(79)90063-4
) capacitors due to leakage current through tantalum oxide, Journal of Applied Physics, vol.132, issue.10, p.4277 ,
DOI : 10.1109/T-ED.1968.16554
Evidence of a shallow junction formation from plasma enhanced chemical vapor deposition of boron nitride and silicon boron nitride, Applied Physics Letters, vol.45, issue.15, p.2103 ,
DOI : 10.1063/1.95136
Generation and annihilation of traps in metal???oxide???semiconductor devices after negative air corona charging, Journal of Applied Physics, vol.126, issue.1, p.359, 1993. ,
DOI : 10.1063/1.103971
CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE, Applied Physics Letters, vol.7, issue.12, p.361, 1967. ,
DOI : 10.1016/0038-1101(65)90046-8
Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance, Thin Solid Films, vol.150, issue.2-3, p.227 ,
DOI : 10.1016/0040-6090(87)90094-0
Couches minces d'oxynitrure de phosphore. Application aux structures MIS sur InP, Revue de Physique Appliqu??e, vol.48, issue.B, p.545, 1989. ,
DOI : 10.1051/rphysap:01989002405054500
URL : https://hal.archives-ouvertes.fr/jpa-00246080
???GaAs metal???insulator???semiconductor system, Journal of Applied Physics, vol.27, issue.11, p.3778, 1986. ,
DOI : 10.1109/T-ED.1980.19986
A new circuit model for tunneling related trapping at insulator???semiconductor interfaces in accumulation, Journal of Applied Physics, vol.30, issue.2, p.553, 1992. ,
DOI : 10.1063/1.1657043
Channel mobility enhancement in InP metal???insulator???semiconductor field???effect transistors, Applied Physics Letters, vol.113, issue.4, p.416, 1985. ,
DOI : 10.1016/0040-6090(84)90017-8
???type InP, Journal of Applied Physics, vol.63, issue.5, p.2584, 1991. ,
DOI : 10.1063/1.340482
Plasma enhanced chemical vapour deposition of boron nitride onto InP, Thin Solid Films, vol.241, issue.1-2, p.278 ,
DOI : 10.1016/0040-6090(94)90441-3
???indium???phosphide???silicon???oxide system, Journal of Vacuum Science and Technology, vol.16, issue.5, p.1466, 1979. ,
DOI : 10.1116/1.570223
???type InP, Journal of Applied Physics, vol.31, issue.1, p.150, 1988. ,
DOI : 10.1063/1.89774
Interface state density and oxide charge measurements on the metal???anodic???oxide???InSb system, Journal of Applied Physics, vol.41, issue.10, p.4605, 1976. ,
DOI : 10.1063/1.1713660
Impedance of semiconductor-insulator-metal capacitors, Solid-State Electronics, vol.7, issue.1, p.59, 1964. ,
DOI : 10.1016/0038-1101(64)90122-4
gate insulators, IEEE Electron Device Letters, vol.16, issue.3, p.109, 1995. ,
DOI : 10.1109/55.363240
Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP, Journal of Applied Physics, vol.131, issue.8, p.4366 ,
DOI : 10.1149/1.2115385
Transformation of Organometallics into Common and Exotic Materials: Design and Activation, NATO ASI SER. E ,
Solid-State Electronics, p.223, 1992. ,
curves based on the disorder???induced gap???state model, Journal of Applied Physics, vol.38, issue.6, p.2120, 1987. ,
DOI : 10.1063/1.92208
MOS (Metal Oxide Semiconduaor) Physics and technology, 1982. ,
Ion Transport Phenomena in Insulating Films, Journal of Applied Physics, vol.48, issue.5, p.1664, 1963. ,
DOI : 10.1063/1.1729182
dielectric layers on InP, Journal of Vacuum Science and Technology, vol.19, issue.3, p.373, 1981. ,
DOI : 10.1116/1.571066
Soc: Solid-State Science and Technology, p.1200, 1987. ,
Time???dependent response of interface states in indium phosphide metal???insulator???semiconductor capacitors investigated with constant???capacitance deep???level transient spectroscopy, Journal of Applied Physics, vol.12, issue.7, p.4014, 1983. ,
DOI : 10.1016/0376-4583(81)90094-7
Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET, Japanese Journal of Applied Physics, vol.19, issue.11, p.2143, 1980. ,
DOI : 10.1143/JJAP.19.2143
) ï221 I. A. Van Vechten et, Appl. Phys. Lett J. F. Wager, I. Appl Phys, vol.44, issue.57, p.4531956, 1984. ,
Solid-State Technol, p.182, 1981. ,
Indirect plasma deposition of silicon dioxide, Journal of Vacuum Science and Technology, vol.21, issue.2, p.655, 1982. ,
DOI : 10.1116/1.571807
???InP interface, Journal of Applied Physics, vol.44, issue.8, p.3109, 1984. ,
DOI : 10.1016/0040-6090(83)90430-3
p-type InP/Langmuir film m.i.s. diodes, IEE Proceedings I Solid State and Electron Devices, vol.127, issue.3, p.137, 1980. ,
DOI : 10.1049/ip-i-1.1980.0026
deposition temperature on inversion???mode InP metal???insulator???semiconductor field???effect transistor, Journal of Applied Physics, vol.15, issue.10, p.6434 ,
DOI : 10.1049/el:19790363
Capacitance-voltage and surface photovoltage measurements of pyrolytically deposited SiO2 on InP, Thin Solid Films, vol.56, issue.1-2, p.201, 1979. ,
DOI : 10.1016/0040-6090(79)90064-6
dielectric layers on InP, Journal of Vacuum Science and Technology, vol.19, issue.3, p.373, 1981. ,
DOI : 10.1116/1.571066
Effect of a finite r.f. conductance of native oxide on InP metal/insulator/semiconductor admittance, Thin Solid Films, vol.150, issue.2-3, p.227 ,
DOI : 10.1016/0040-6090(87)90094-0
Hasegaw4 Thin Solid Films, p.183, 1979. ,
A new circuit model for tunneling related trapping at insulator???semiconductor interfaces in accumulation, Journal of Applied Physics, vol.30, issue.2, p.553, 1992. ,
DOI : 10.1063/1.1657043
Silicon???nitride???gallium???arsenide MIS structures produced by plasma enhanced deposition, Journal of Applied Physics, vol.50, issue.5, p.3515, 1981. ,
DOI : 10.1063/1.91010
Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide, Journal of Vacuum Science and Technology, vol.14, issue.4, p.957, 1977. ,
DOI : 10.1116/1.569399
Influence de la technique de d??p??t d'isolant et des modes de d??capage du semiconducteur sur les propri??t??s ??lectriques de structures m??tal-Al 2O3-InP, Revue de Physique Appliqu??e, vol.53, issue.12, p.769, 1983. ,
DOI : 10.1051/rphysap:019830018012076900
CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCE, Applied Physics Letters, vol.7, issue.12, p.361, 1967. ,
DOI : 10.1016/0038-1101(65)90046-8
Interface state band between GaAs and its anodic native oxide, Thin Solid Films, vol.56, issue.1-2, p.183, 1979. ,
DOI : 10.1016/0040-6090(79)90063-4
Some electrical properties of the GaAs-anodic oxide interface on the basis of measurements of the capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures, Thin Solid Films, vol.165, issue.1, p.21, 1988. ,
DOI : 10.1016/0040-6090(88)90675-X
Small-Signal Admittance Study of GaAs Anodic MOS System, Physica Status Solidi (a), vol.33, issue.2, p.689, 1979. ,
DOI : 10.1002/j.1538-7305.1967.tb01727.x
???GaAs metal???insulator???semiconductor system, Journal of Applied Physics, vol.27, issue.11, p.3778, 1986. ,
DOI : 10.1109/T-ED.1980.19986
Solid-State Electron, p.285, 1962. ,
Interaction of deep???level traps with the lowest and upper conduction minima in InP, Journal of Applied Physics, vol.33, issue.1, p.423 ,
DOI : 10.1063/1.90233
???type InP, Journal of Applied Physics, vol.45, issue.4, p.3317 ,
DOI : 10.1049/el:19810040
Thèse de doctorat de l'université de lr',etz, Mat. Res. soc. syrnp. Proc, vol.104, p.491, 1988. ,
Effect of heat treatment on n-type bulk grown and vapour phase epitaxial indium phosphide, Solid-State Electronics, vol.20, issue.1, p.27, 1977. ,
DOI : 10.1016/0038-1101(77)90029-6
???InP grown by molecular beam epitaxy, Applied Physics Letters, vol.14, issue.15, p.1436, 1989. ,
DOI : 10.1049/el:19780276
???InP treated with hydrogen plasma, Applied Physics Letters, vol.30, issue.10, p.1226, 1992. ,
DOI : 10.1063/1.92386
etching and phosphorus???nitride deposition, Journal of Applied Physics, vol.4, issue.6, p.2370 ,
DOI : 10.1109/EDL.1983.25666
Study of charge trapping instabilities in a silicon???nitride/indium???phosphide metal???insulator???semiconductor structure by the constant???capacitance method, Journal of Applied Physics, vol.45, issue.10, p.4743 ,
DOI : 10.1063/1.99438
Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap???filling experiment: The charge???potential feedback effect, Journal of Applied Physics, vol.38, issue.3, p.1104 ,
DOI : 10.1016/0079-6816(83)90006-0
Charges and defects in SiO2 films deposited by plasma-enhanced chemical vapor deposition at low temperatures, Solid-State Electronics, vol.34, issue.2, p.123, 1991. ,
DOI : 10.1016/0038-1101(91)90077-C
Positive???charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics, Journal of Applied Physics, vol.20, issue.4, p.2185, 1991. ,
DOI : 10.1109/55.719
The effects of oxide traps on the MOS capacitance, IEEE Transactions on Electron Devices, vol.12, issue.4, p.167, 1965. ,
DOI : 10.1109/T-ED.1965.15475
Drift phenomena in CdSe thin film FET's, Solid-State Electronics, vol.10, issue.10, p.997, 1967. ,
DOI : 10.1016/0038-1101(67)90149-9
Solid-State Electron, p.285, 1962. ,
Solid-State Electron, 1970. ,
Solid-State Elect, p.59, 1964. ,
Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal???insulator???semiconductor structures, Journal of Applied Physics, vol.27, issue.12, p.4299, 1984. ,
DOI : 10.1109/T-ED.1980.19986
FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES, Applied Physics Letters, vol.35, issue.2, p.48, 1966. ,
DOI : 10.1063/1.1754385
Transient capacitance measurements of hole emission from interface states in MOS structures, Applied Physics Letters, vol.31, issue.9, p.622, 1977. ,
DOI : 10.1016/0039-6028(74)90251-9
Surface modification of InP by plasma techniques using hydrogen and oxygen, Thin Solid Films, vol.78, issue.3, p.271 ,
DOI : 10.1016/0040-6090(89)90593-2
Solid-State Elect, p.25 ,
Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP, Journal of Applied Physics, vol.131, issue.8, p.4366 ,
DOI : 10.1149/1.2115385
The effects of annealing metal???insulator???semiconductor diodes employing a thermal nitride???InP interface, Journal of Applied Physics, vol.50, issue.1, p.536 ,
DOI : 10.1016/0040-6090(79)90048-8
Transformation of Organometallics into Common and Exotic Materials: Design and Activation, NATO ASI SER. E. Edited bv R.M ,
curves based on the disorder???induced gap???state model, Journal of Applied Physics, vol.38, issue.6, p.2120 ,
DOI : 10.1063/1.92208
Thin Solid Films, p.173, 1979. ,
e travail présenté dans ce mémoire concerne la mise en oeuvre de méthodes de caractér;r;ai électriques permettant d'évalucr la qualité des structures Métal/IsolanVsemiconducteur (MIS: AuAEN/InP_l t mieux comprendre certains problèmes rcncontrés. [aes structures étudiécs ont été élaborées par dépot chi:n en phase vapeur assisté par plasma, PECVD), les substrats d'lnP étant placés soit dans le pt: (structures DP) soit hors de la zone plasma (structures HP) ,
une étude de la densit4 d'riiats d'interfacc N*, par les méthodes de DLTS et Terman a été fa Pour les slructures HP, la méthode de Terman a conduit à un minimum de N* d'environ 2x10lr cm-zeV-l. Nos résultats mcttent en évidence ,