Skip to Main content Skip to Navigation

Elaboration par dépôt chimique en phase vapeur assisté par plasma (PECVD) de films minces de nitrure de bore (BN) sur phosphure d'indium (InP)

Abstract : In the present work, Boron Nitride (BN) thin films, which are known as being electrically insulating, chemically and thermally stable, have been proposed as gate insulator on Indium Phosphide (InP) for the realisation of metal-insulator-semiconductor field affect transistor (misfet). The important requirement for the deposition process on InP, is the use of a low substrate temperature in order to reduce surface damage and therefore to maintain good electrical metal-insulator-semiconductor (mis) characteristics. In this way, we have developed both radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and microwave-PECVD. The films were characterized by several techniques, infrared and ultraviolet-visible spectroscopy, X-ray photoelectron spectroscopy, ellipsometry, X-ray diffraction. The electrical properties of the Au/BN/InP MIS structures have been evaluated by capacitance-voltage, current-voltage measurements and deep level transients spectroscopy (DLTS). The deposited layers were identified as being essentially hexagonal-Bn, with a certain amount of carbon, resulting from the boron precursor. The optical index and the optical band gap have been evaluated in the 1.50-1.77 and 3.7-5.9 eV ranges respectively, according to the PECVD technique. The BN films deposited by both RF and microwave PECVD techniques, are consistent with the results reported in the literature. These considerations show that the PECVD processes are well adapted for the growth of BN thin films. The elctrical Au/BN/InP MIS characteristics have not been improved significantly, the results being vey similar to those obtained in the literature, with more classical materials (SiO2, Si3N4...) as gate insulator on InP. To date, the eeffective reduction of the interface state density on InP and consequently the industrial InP-MISFET production, seem to be compromised in a general way
Document type :
Complete list of metadata

Cited literature [110 references]  Display  Hide  Download
Contributor : Administrateur Du Ccsd Connect in order to contact the contributor
Submitted on : Tuesday, April 24, 2018 - 4:14:41 PM
Last modification on : Thursday, April 26, 2018 - 1:28:09 AM


Files produced by the author(s)


  • HAL Id : tel-01777220, version 1



Olivier Baehr. Elaboration par dépôt chimique en phase vapeur assisté par plasma (PECVD) de films minces de nitrure de bore (BN) sur phosphure d'indium (InP). Autre. Université Paul Verlaine - Metz, 1997. Français. ⟨NNT : 1997METZ037S⟩. ⟨tel-01777220⟩



Record views


Files downloads