A. J. Kenyon, Recent developments in rare-earth doped materials for optoelectronics, Progress in Quantum Electronics, vol.26, pp.225-284, 2002.

M. Park and S. Kim, Thermal conductivity of AlN thin films deposited by RF magnetron sputtering. Materials Science in Semiconductor Processing, vol.15, pp.6-10, 2012.

H. Carsten, Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals, Japanese Journal of Applied Physics, vol.52, issue.8S, pp.8-14, 2013.

T. Suehiro, Synthesis of Aluminum Nitride Nanopowder by Gas-Reduction-Nitridation Method, Journal of the American Ceramic Society, vol.86, issue.6, pp.1046-1048, 2003.

M. B. Assouar, STUDY OF ACOUSTICAL AND OPTICAL PROPERTIES OF ALN FILMS FOR SAW AND BAW DEVICES: CORRELATION BETWEEN THESE PROPERTIES. Integrated Ferroelectrics, vol.82, pp.45-54, 2006.

C. Caliendo, P. Imperatori, and E. Cianci, Structural, morphological and acoustic properties of AlN thick films sputtered on Si(001) and Si(111) substrates at low temperature. Thin Solid Films, vol.441, pp.32-37, 2003.

D. Kecik, Layer-and strain-dependent optoelectronic properties of hexagonal AlN, Physical Review B, vol.92, issue.16, p.165408, 2015.

M. Yang, Optoelectronic properties of GaN, AlN, and GaAlN alloys, Optik-International Journal for Light and Electron Optics, vol.126, issue.22, pp.3357-3361, 2015.

T. Hanada, Basic Properties of ZnO, GaN, and Related Materials, in Oxide and Nitride Semiconductors: Processing, Properties, pp.1-19, 2009.

H. Morkoç, General Properties of Nitrides, in Handbook of Nitride Semiconductors and Devices, pp.1-129, 2009.

J. Cervenka, Nucleation and Chemical Vapor Deposition Growth of Polycrystalline Diamond on Aluminum Nitride: Role of Surface Termination and Polarity, Crystal Growth & Design, vol.13, issue.8, pp.3490-3497, 2013.

M. Stegmaier and W. H. Pernice, Mode control and mode conversion in nonlinear aluminum nitride waveguides, Optics Express, vol.21, issue.22, pp.26742-26761, 2013.

J. X. Zhang, Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering, Surface and Coatings Technology, vol.198, issue.1-3, pp.68-73, 2005.

P. A. Wolff, Electronic Structure of Semiconductors, pp.1-40, 1973.

A. Kobayashi, Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO, Physical Review B, vol.28, issue.2, pp.935-945, 1983.

E. Ruiz, S. Alvarez, and P. Alemany, Electronic structure and properties of AlN, Physical Review B, vol.49, issue.11, pp.7115-7123, 1994.

I. H. Nwigboji, Ab-initio computations of electronic and transport properties of wurtzite aluminum nitride (w-AlN). Materials Chemistry and Physics, vol.157, pp.80-86, 2015.

I. Gorczyca, Optical phonon modes in GaN and AlN, Physical Review B, vol.51, issue.17, pp.11936-11939, 1995.

C. Carlone, K. M. Lakin, and H. R. Shanks, Optical phonons of aluminum nitride, Journal of Applied Physics, vol.55, issue.11, pp.4010-4014, 1984.

L. E. Mcneil, M. Grimsditch, and R. H. French, Vibrational Spectroscopy of Aluminum Nitride. Journal of the American Ceramic Society, vol.76, issue.5, pp.1132-1136, 1993.

O. Debieu, Structural and optical characterization of pure Si-rich nitride thin films, Nanoscale Research Letters, vol.8, issue.1, p.31, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01138071

S. Khan, Texture of the nano-crystalline AlN thin films and the growth conditions in DC magnetron sputtering, Progress in Natural Science: Materials International, vol.25, issue.4, pp.282-290, 2015.

K. Jagannadham, Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study, Journal of Vacuum Science & Technology A, vol.16, issue.5, pp.2804-2815, 1998.

A. Sanz-hervás, Influence of crystal properties on the absorption IR spectra of polycrystalline AlN thin films. Diamond and Related Materials, vol.12, pp.1186-1189, 2003.

E. Fourmond, Electrical properties of boron, phosphorus and gallium co-doped silicon. Energy Procedia, vol.8, pp.349-354, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00601278

N. A. Sobolev, Defects and their influence on the luminescence of rare-earth ions implanted in single crystal Si, Physica B: Condensed Matter, pp.333-336, 2001.

A. J. Kenyon, Recent developments in rare-earth doped materials for optoelectronics, Progress in Quantum Electronics, vol.26, pp.225-284, 2002.

C. Stampfl and C. G. Van-de-walle, Theoretical investigation of native defects, impurities, and complexes in aluminum nitride, Physical Review B, vol.65, issue.15, p.155212, 2002.

A. Sedhain, Photoluminescence properties of AlN homoepilayers with different orientations, Applied Physics Letters, vol.93, issue.4, p.41905, 2008.

M. Bickermann, Point defect content and optical transitions in bulk aluminum nitride crystals. physica status solidi (b), vol.246, pp.1181-1183, 2009.

G. A. Slack, Some effects of oxygen impurities on AlN and GaN, Journal of Crystal Growth, vol.246, pp.287-298, 2002.

M. He, Preparation of nearly oxygen-free AlN thin films by pulsed laser deposition, Journal of Vacuum Science & Technology A, vol.16, issue.4, pp.2372-2375, 1998.

R. D. Vispute, Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition, Journal of Applied Physics, vol.77, issue.9, pp.4724-4728, 1995.

M. Mizuho, Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol.20, issue.1, p.17, 1981.

J. L. Xie and S. Wickramanayaka, Effect of process pressure on PVD AlN thin film, Electronics Packaging Technology Conference (EPTC), 2014 IEEE 16th, 2014.

. Copyright, Handbook of Silicon Based MEMS Materials and Technologies, 2010.

Y. Taniyasu, M. Kasu, and T. Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres, Nature, vol.441, issue.7091, pp.325-328, 2006.

A. T. Wieg, Broadband white light emission from Ce:AlN ceramics: High thermal conductivity down-converters for LED and laser-driven solid state lighting, APL Materials, vol.4, issue.12, p.126105, 2016.

C. Xiong, W. H. Pernice, and H. X. Tang, Low-Loss, Silicon Integrated, Aluminum Nitride Photonic Circuits and Their Use for Electro-Optic Signal Processing, Nano Letters, vol.12, issue.7, pp.3562-3568, 2012.

S. D. Barrett and S. S. Dhesi, The Structure of Rare-Earth Metal Surfaces, 2001.

D. A. Atwood, The Rare Earth Elements: Fundamentals and Applications, p.624, 2012.

S. Cotton, The Lanthanides-Principles and Energetics, in Lanthanide and Actinide Chemistry, pp.9-22, 2006.

M. M. Mezdrogina, E. Y. Danilovskii, and R. V. Kuz'min, Emission from rare-earth ions in GaN wurtzite crystals, Inorganic Materials, vol.47, issue.13, pp.1450-1469, 2011.

B. R. Judd, Optical Absorption Intensities of Rare-Earth Ions, Physical Review, vol.127, issue.3, pp.750-761, 1962.

G. S. Ofelt, Intensities of Crystal Spectra of Rare-Earth Ions, The Journal of Chemical Physics, vol.37, issue.3, pp.511-520, 1962.

G. H. Dieke, Spectra and Energy Levels of Rare Earth Ions in Crystals, H. Crosswhite and H.M. Crosswhite, 1968.

M. Aydin and D. L. Akins, Vibroelectronic Properties of Functionalized Single-Walled Carbon Nanotubes and Double-Walled Boron Nitride Nanotubes, in Physical and Chemical Properties of Carbon, InTech: Rijeka. p. Ch. 03. 52, 2013.

L. G. Uitert and L. F. Johnson, Energy Transfer Between Rare-Earth Ions, The Journal of Chemical Physics, vol.44, issue.9, pp.3514-3522, 1966.

D. L. Dexter, A Theory of Sensitized Luminescence in Solids, The Journal of Chemical Physics, vol.21, issue.5, pp.836-850, 1953.

M. Stachowicz, Crystal field analysis of rare-earth ions energy levels in GaN, Optical Materials, vol.37, pp.165-174, 2014.

A. J. Steckl, J. H. Park, and J. M. Zavada, Prospects for rare earth doped GaN lasers on Si. Materials Today, vol.10, pp.20-27, 2007.

J. H. Park and A. J. Steckl, Site specific Eu3+ stimulated emission in GaN host, Applied Physics Letters, vol.88, issue.1, p.11111, 2006.

L. Gan, Multiple doping structures of the rare-earth atoms in [small beta]-SiAlON:Ce phosphors and their effects on luminescence properties, Nanoscale, vol.7, issue.26, pp.11393-11400, 2015.

C. Wang, Grain Boundary Films in Rare-Earth-Glass-Based Silicon Nitride, Journal of the American Ceramic Society, vol.79, issue.3, pp.788-792, 1996.

E. Sourty, Atomic-scaled investigation of structure-dependent luminescence in Sialon:Ce phosphors, Applied Physics Letters, vol.101, issue.16, p.161904, 2012.

T. Takeda, R. Xie, and N. Hirosaki, Local Structure Analysis in Nitride and Oxynitride Phosphors, ECS Journal of Solid State Science and Technology, vol.2, issue.2, pp.3132-3137, 2013.

M. D. Shinn, Optical transitions of Er 3+ ions in fluorozirconate glass, Physical Review B, vol.27, issue.11, pp.6635-6648, 1983.

W. J. Miniscalco, Erbium-doped glasses for fiber amplifiers at 1500 nm, Journal of Lightwave Technology, vol.9, issue.2, pp.234-250, 1991.

I. Nicoara, N. Pecingina-garjoaba, and O. Bunoiu, Concentration distribution of Yb2+ and Yb3+ ions in YbF3:CaF2 crystals, Journal of Crystal Growth, pp.1476-1481, 2008.

L. D. Vila, Mechanism of the Yb-Er energy transfer in fluorozirconate glass, Journal of Applied Physics, vol.93, issue.7, pp.3873-3880, 2003.

S. Hinojosa, Energy back transfer, migration and energy transfer (Yb-to-Er and Er-toYb) processes in Yb, Er:YAG. Journal of Luminescence, pp.694-698, 2003.

L. Wang, Energy transfer in Ce, Nd, and Yb co-doped YAG phosphors, Chinese Optics Letters, issue.11, p.61604, 2013.

J. Chen, Near-infrared quantum cutting in Ce3+, Yb3+ co-doped YBO3 phosphors by cooperative energy transfer, III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, vol.32, p.603, 2010.

T. Kita, Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN, Journal of Applied Physics, vol.117, issue.16, p.163105, 2015.

H. J. Lozykowski, Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN. Microelectronics Journal, vol.36, pp.453-455, 2005.

T. Liu, Blue Emission by Interstitial Site Occupation of Ce 3+ in AlN, Chemistry of Materials, 2012, vol.24, issue.17, pp.3486-3492

W. Wang, Bifunctional AlN:Tb semiconductor with luminescence and photocatalytic properties, vol.5, pp.90698-90704, 2015.

R. Weingärtner, Thermal activation, cathodo-and photoluminescence measurements of rare earth doped, Optical Materials, vol.28, pp.790-793, 2006.

A. T. Wieg, AlN polycrystalline ceramics: A candidate media for tunable, high energy, near IR lasers, Applied Physics Letters, vol.109, issue.12, p.121901, 2016.

T. Koubaa, Spectra and energy levels of Yb3+ in AlN, Journal of Applied Physics, vol.106, issue.1, p.13106, 2009.

A. R. Zanatta, C. T. Ribeiro, and U. Jahn, Optoelectronic and structural characteristics of Erdoped amorphous AlN films, Journal of Applied Physics, vol.98, issue.9, p.93514, 2005.

L. D. Merkle, Fluorescence of Er3+:AlN polycrystalline ceramic, Optical Materials Express, vol.2, issue.1, pp.78-91, 2012.

R. Ishikawa, Atomic Structure of Luminescent Centers in High-Efficiency Ce-doped wAlN Single Crystal, Scientific Reports, vol.4, p.3778, 2014.

R. Lavi, Efficient pumping scheme for neodymium-doped materials by direct excitation of the upper lasing level, Applied Optics, vol.38, issue.36, pp.7382-7385, 1999.

D. Sangla, F. Balembois, and P. Georges, Nd:YAG laser diode-pumped directly into the emitting level at 938 nm, Optics Express, vol.17, issue.12, pp.10091-10097, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00585427

A. Vantomme, B. D. Vries, and U. Wahl, Lattice Location of RE Impurities in IIINitrides, Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications, pp.55-98, 2010.

R. A. Faulkner and J. J. Hopfield, Isoelectronic Impurities in Semiconductors, pp.218-238, 1968.

H. J. Lozykowski, Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors, Physical Review B, vol.48, issue.24, pp.17758-17769, 1993.

A. Braud, Excitation Mechanisms of RE Ions in Semiconductors, Rare Earth Doped IIINitrides for, pp.269-307, 2010.

L. Guerbous and O. Krachni, The 4f-5d luminescence transitions in cerium-doped LuF3, Journal of Modern Optics, vol.53, issue.14, pp.2043-2053, 2006.

J. Mares, Energy transfer mechanisms between Ce3+ and Nd3+ in YAG : Nd, Ce at low temperature, Rev. Phys. Appl, vol.22, issue.2, pp.145-152, 1987.
URL : https://hal.archives-ouvertes.fr/jpa-00245526

K. Suresh, N. V. Poornachandra-rao, and K. V. Murthy, Blue excitable green emitting Ce3+ doped CaS phosphor for w-LEDs, Luminescence, vol.31, issue.1, pp.179-182, 2016.

Y. Parganiha, Near UV-blue emission from Ce doped Y2SiO5 phosphor. Materials Science in Semiconductor Processing, vol.31, pp.715-719, 2015.

H. S. Jang, Mechanism for strong yellow emission of Y3Al5O12:Ce3+ phosphor under electron irradiation for the application to field emission backlight units, Applied Physics Letters, vol.90, issue.7, p.71908, 2007.

I. I. Kindrat, Spectroscopic properties of the Ce-doped borate glasses, Optical Materials, vol.59, pp.20-27, 2016.

M. Nikl, Defect Engineering in Ce-Doped Aluminum Garnet Single Crystal Scintillators, Crystal Growth & Design, vol.14, issue.9, pp.4827-4833, 2014.

R. Marchand, Nitrides and oxynitrides: Preparation, crystal chemistry and properties, Journal of the European Ceramic Society, vol.8, issue.4, pp.197-213, 1991.

X. Rong-jun, H. Naoto-;-he, and X. , Dependence of luminescence properties on composition of rare-earth activated (oxy)nitrides phosphors for white-LEDs applications, Journal of Materials Science, vol.8, issue.7-8, pp.4763-4775, 2007.

S. B. Aldabergenova, Blue, green and red emission from Ce 3+ , Tb 3+ and Eu 3+ ions in amorphous GaN and AlN thin films, Journal of Non-Crystalline Solids, vol.1, pp.709-713, 2002.

R. Ishikawa, Direct Observation of Dopant Atom Diffusion in a Bulk Semiconductor Crystal Enhanced by a Large Size Mismatch, Physical Review Letters, vol.113, issue.15, p.155501, 2014.

A. Dar and A. Majid, DFT study of cerium doped aluminum nitride, Eur. Phys. J. Appl. Phys, vol.71, issue.1, p.10101, 2015.

A. Majid, Role of nitrogen vacancies in cerium doped aluminum nitride, Journal of Magnetism and Magnetic Materials, vol.412, pp.49-54, 2016.

A. Brenier, A new evaluation of Yb3+-doped crystals for laser applications, Journal of Luminescence, vol.92, issue.3, pp.199-204, 2001.

C. Wang, Ceramic planar waveguide laser of non-aqueous tape casting fabricated YAG/Yb:YAG/YAG, Scientific Reports, vol.6, p.31289, 2016.

G. Atar, Yb/Al-codoped fused-silica planar-waveguide amplifier, Optical Materials, vol.55, pp.49-54, 2016.

C. Ma, Longitudinally diode-pumped planar waveguide YAG/Yb:LuAG/YAG ceramic laser at 1030.7 nm, Optics Letters, vol.41, issue.14, pp.3317-3319, 2016.

J. D. Minelly, Diode-array pumping of Er/sup 3+//Yb/sup 3+/ Co-doped fiber lasers and amplifiers, IEEE Photonics Technology Letters, vol.5, issue.3, pp.301-303, 1993.

J. Meijer, Downconversion for solar cells in ${\text{YF}}_{3}:{\text{Nd}}^{3+}$, ${\text{Yb}}^{3+}$, Physical Review B, vol.81, issue.3, p.35107, 2010.

L. D. Florêncio, Efficiency enhancement in solar cells using photon down-conversion in Tb/Yb-doped tellurite glass, Solar Energy Materials and Solar Cells, vol.157, pp.468-475, 2016.

J. Li, Efficient Near-Infrared Downconversion and Energy Transfer Mechanism of Ce3+/Yb3+ Codoped Calcium Scandate Phosphor. Inorganic Chemistry, vol.54, pp.4806-4810, 2015.

K. Lorenz, Defect studies and optical activation of Yb doped GaN, Journal of Physics: Conference Series, vol.249, issue.1, p.12053, 2010.

A. R. Zanatta, Effect of thermal annealing treatments on the optical properties of rare-earthdoped AlN films, Journal of Physics D: Applied Physics, vol.42, issue.2, p.25109, 2009.

K. Ellmer and T. Welzel, Reactive magnetron sputtering of transparent conductive oxide thin films: Role of energetic particle (ion) bombardment, Journal of Materials Research, vol.27, issue.5, pp.765-779, 2012.

S. Mahieu and D. Depla, Correlation between electron and negative O? ion emission during reactive sputtering of oxides, Applied Physics Letters, vol.90, issue.12, p.121117, 2007.

S. M. Olhero, F. L. Alves, and J. M. Ferreira, Last Advances in Aqueous Processing of Aluminium Nitride (AlN)-A Review, Advances in Ceramics-Synthesis and Characterization, Processing and Specific Applications, p.10, 2011.

V. X. Ho, Photoluminescence quantum efficiency of Er optical centers in GaN epilayers, vol.7, p.39997, 2017.

Y. Fang, Investigation of temperature-dependent photoluminescence in multi-quantum wells, vol.5, p.12718, 2015.

L. Li, Temperature Dependent Energy Transfer in Ce3+-Yb3+ Co-Doped YAG Phosphors, ECS Journal of Solid State Science and Technology, vol.5, issue.9, pp.146-149, 2016.

Y. Jia, Synthesis and photoluminescence properties of Ce3+ and Eu2+-activated Ca7Mg(SiO4)4 phosphors for solid state lighting, Physical Chemistry Chemical Physics, vol.14, issue.10, pp.3537-3542, 2012.

S. Barth, Sputter deposition of stress-controlled piezoelectric AlN and AlScN films for ultrasonic and energy harvesting applications, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol.61, issue.8, pp.1329-1334, 2014.

X. S. Miao, Y. C. Chan, and Z. Y. Lee, Optical Properties and Reactive Sputtering Conditions of AIN and AlSiN Thin Films for Magneto-Optical Applications, Journal of Electronic Materials, vol.26, issue.1, pp.21-24, 1997.

O. Makoto, T. Hiroto, and F. Hiroyuki, Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering, Japanese Journal of Applied Physics, issue.5S, p.55, 2016.

G. L. Huffman, Stress dependence of reactively sputtered aluminum nitride thin films on sputtering parameters, Journal of Vacuum Science & Technology A, vol.7, issue.3, pp.2252-2255, 1989.

Q. Wei, Effects of sputtering pressure on nanostructure and nanomechanical properties of AlN films prepared by RF reactive sputtering, Transactions of Nonferrous Metals Society of China, vol.24, issue.9, pp.2845-2855, 2014.

H. Takeuchi, M. Ohtsuka, and H. Fukuyama, Effect of sputtering power on surface characteristics and crystal quality of AlN films deposited by pulsed DC reactive sputtering. physica status solidi (b), vol.252, pp.1163-1171, 2015.

M. Zhang, Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications. Micromachines, vol.6, p.1236, 2015.

H. P. Lobl, Piezo-electric AlN and PZT films for micro-electronic applications, Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE, 1999.

S. Navaladian, A Rapid Synthesis of Oriented Palladium Nanoparticles by UV Irradiation, Nanoscale Research Letters, vol.4, issue.2, pp.181-186, 2009.

H. N. Shah, R. Jayaganthan, and D. Kaur, Effect of sputtering pressure and temperature on DC magnetron sputtered CrN films, Surface Engineering, vol.26, issue.8, pp.629-637, 2010.

T. Kumada, M. Ohtsuka, and H. Fukuyama, Influence of substrate temperature on the crystalline quality of AlN layers deposited by RF reactive magnetron sputtering, vol.5, p.17136, 2015.

G. F. Iriarte, J. G. Rodríguez, and F. Calle, Synthesis of c-axis oriented AlN thin films on different substrates: A review, Materials Research Bulletin, vol.45, issue.9, pp.1039-1045, 2010.

Y. Kajikawa, S. Noda, and H. Komiyama, Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides, Journal of Vacuum Science & Technology A, vol.21, issue.6, pp.1943-1954, 2003.

T. Liu, Nucleation and growth of (10¯11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy, Scientific Reports, vol.6, p.26040, 2016.

M. Amirhoseiny, Characterizations of InN Thin Films Grown on Si (110) Substrate by Reactive Sputtering, Journal of Nanomaterials, p.7, 2011.

M. Akiyama, Preparation of highly oriented AlN thin films on glass substrates by helicon plasma sputtering and design of experiments. Thin Solid Films, vol.350, pp.85-90, 1999.

R. K. Choudhary, Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering, ISRN Materials Science, 2013.

D. Deniz, T. Karabacak, and J. M. Harper, Competitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering, Journal of Applied Physics, vol.103, issue.8, p.83553, 2008.

H. Jin, Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering, Thin Solid Films, vol.520, issue.15, pp.4863-4870, 2012.

M. Clement, Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films, Journal of Applied Physics, vol.94, issue.3, pp.1495-1500, 2003.

D. Depla, Target voltage behaviour during DC sputtering of silicon in an argon/nitrogen mixture. Vacuum, vol.66, pp.9-17, 2002.

M. Hasan, Dual-Metal-Gate Work Function by Controlling Metal Gate Thickness and Composition, Electrochemical and Solid-State Letters, issue.5, p.11, 2008.

W. Tao, Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering, Chin. Phys. B, vol.20, issue.3, 2011.

K. Ellmer and T. Welzel, Reactive magnetron sputtering of transparent conductive oxide thin films: Role of energetic particle (ion) bombardment, Journal of Materials Research, vol.27, issue.05, pp.765-779, 2012.

D. Horwat and A. Anders, Ion acceleration and cooling in gasless self-sputtering, Applied Physics Letters, vol.97, issue.22, p.221501, 2010.

F. Chernow, J. A. Borders, and D. K. Brice, Ion Implantation in Semiconductors, pp.21-29, 1976.

T. Kubart, T. Nyberg, and S. Berg, Modelling of low energy ion sputtering from oxide surfaces, Journal of Physics D: Applied Physics, vol.43, p.205204, 1920.
URL : https://hal.archives-ouvertes.fr/hal-00569606

E. Iborra, Effect of particle bombardment on the orientation and the residual stress of sputtered AlN films for SAW devices, IEEE Trans. Ultrason., Ferroelect., Freq. Control, vol.51, issue.3, pp.352-358, 2004.

T. Kikuo, High-Energy Particles in AlN Film Preparation by Reactive Sputtering Technique, Japanese Journal of Applied Physics, vol.22, issue.3R, p.418, 1983.

G. F. Iriarte, J. G. , and F. Calle, Effect of substrate-target distance and sputtering pressure in the synthesis of AIN thin films. Microsystem Technologies, vol.6, p.2011, 2011.

W. Chamorro, Near-room temperature single-domain epitaxy of reactively sputtered ZnO films, Journal of Physics D: Applied Physics, vol.46, issue.23, p.235107, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01285173

S. Shi, Structural evolution of AlN nano-structures: Nanotips and nanorods, Chemical Physics Letters, vol.418, issue.1-3, pp.152-157, 2006.

G. Knuyt, A model for texture evolution in a growing film, Surface and Coatings Technology, vol.1, pp.311-315, 1995.

A. C. Galca, Structural and optical properties of c-axis oriented aluminum nitride thin films prepared at low temperature by reactive radio-frequency magnetron sputtering, Thin Solid Films, vol.524, pp.328-333, 2012.

Y. Feng, Competitive growth mechanisms of AlN on Si (111) by MOVPE, Scientific Reports, vol.4, p.6416, 2014.

S. Mahieu, Biaxial alignment in sputter deposited thin films, Thin Solid Films, vol.515, issue.4, pp.1229-1249, 2006.

H. Joo, Spectrophotometric analysis of aluminum nitride thin films, Journal of Vacuum Science & Technology A, vol.17, issue.3, pp.862-870, 1999.

A. R. Zanatta and I. Chambouleyron, Absorption edge, band tails, and disorder of amorphous semiconductors, Physical Review B, vol.53, issue.7, pp.3833-3836, 1996.

H. Y. Joo, The optical and structural properties of AlN thin films characterized by spectroscopic ellipsometry, Thin Solid Films, vol.368, issue.1, pp.67-73, 2000.

E. Klaus, Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties, Journal of Physics D: Applied Physics, vol.33, issue.4, p.17, 2000.

H. Fatemeh, Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering, Japanese Journal of Applied Physics, vol.49, issue.9R, p.95802, 2010.

S. Khan, Effect of substrate biasing and temperature on AlN thin film deposited by cathodic arc ion. Materials Science in Semiconductor Processing, vol.16, pp.640-646, 2013.

J. A. Guerra, Erratum: Effect of thermal annealing treatments on the optical activation of Tb 3+-doped amorphous SiC:H thin films, Journal of Physics D: Applied Physics, vol.49, issue.40, p.409601, 2016.

M. Fialho, Effect of AlN content on the lattice site location of terbium ions in Al x Ga 1? x N compounds. Semiconductor Science and Technology, vol.31, p.35026, 2016.

Y. Y. Ma, Luminescence properties of cerium doped silicon nitride with MgO additive, 2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013.

L. Hu, Luminescence of Ce 3 + in lanthanum silicon oxynitride, Chinese Physics B, vol.19, issue.12, p.127807, 2010.

L. Li, Luminescence of Ce3+ in Different Lattice Sites of La2CaB10O19, The Journal of Physical Chemistry C, vol.112, issue.35, pp.13763-13768, 2008.

J. W. Van-krevel, Long wavelength Ce 3+ emission in Y-Si-O-N materials, Journal of Alloys and Compounds, vol.268, issue.1-2, pp.272-277, 1998.

T. Yokoyama, Effect of Mg and Zr co-doping on piezoelectric AlN thin films for bulk acoustic wave resonators, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol.61, issue.8, pp.1322-1328, 2014.

D. Nilsson, E. Janzén, and A. Kakanakova-georgieva, Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material, Journal of Physics D: Applied Physics, vol.49, issue.17, p.175108, 2016.

F. S. Liu, Visible and infrared emissions from c-axis oriented AlN:Er films grown by magnetron sputtering, Journal of Applied Physics, vol.99, issue.5, p.53515, 2006.

B. Liu, Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy. Solid State Communications, vol.149, pp.715-717, 2009.

C. Mao, Effect of Er doping on microstructure and optical properties of ZnO thin films prepared by sol-gel method, Journal of Materials Science: Materials in Electronics, vol.26, issue.11, pp.8732-8739, 2015.

K. Lorenz, Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN, MRS Proceedings, p.892, 2005.

C. Lin and F. Lu, Oxidation behavior of AlN films at high temperature under controlled atmosphere, Journal of the European Ceramic Society, vol.28, issue.3, pp.691-698, 2008.

G. A. Slack, Nonmetallic crystals with high thermal conductivity, Journal of Physics and Chemistry of Solids, vol.34, issue.2, pp.321-335, 1973.

J. Rosa and I. Tale, Mechanism of thermoluminescence in AlN:O, Czechoslovak Journal of Physics B, vol.29, issue.7, pp.810-824, 1979.

B. Berzina, Luminescence mechanisms of oxygen-related defects in AlN. Radiation Effects and Defects in Solids, vol.157, pp.1089-1092, 2002.

Q. Yan, Origins of optical absorption and emission lines in AlN, Applied Physics Letters, vol.105, issue.11, p.111104, 2014.

A. Sedhain, The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates, Applied Physics Letters, vol.95, issue.26, p.262104, 2009.

M. Vila, Intense luminescence emission from rare-earth-doped MoO 3 nanoplates and lamellar crystals for optoelectronic applications, Journal of Physics D: Applied Physics, vol.47, issue.35, p.355105, 2014.

I. Sakaguchi, Effect of post-annealing on structural and optical properties, and elemental distribution in heavy Eu-implanted ZnO thin films, Journal of the Ceramic Society of Japan, vol.118, pp.1087-1089, 1383.

W. C. Chin and K. Y. Cheong, Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm 2 O 3 gate on n-type silicon substrate, Journal of Materials Science: Materials in Electronics, vol.22, issue.12, p.1816, 2011.

T. P. Rao, S. G. Raj, and M. C. Kumar, Effect of Annealing Atmosphere on Structural and Optical Properties of Nd:ZnO Thin Films. Procedia Materials Science, vol.6, pp.1631-1638, 2014.

Q. Y. Zhang, Influence of annealing atmosphere and temperature on photoluminescence of Tb 3+ or Eu 3+-activated zinc silicate thin film phosphors via sol-gel method, Chemical Physics Letters, vol.351, issue.3-4, pp.163-170, 2002.

L. Wu, Oxidation state and lattice expansion of CeO 2-x nanoparticles as a function of particle size, Physical Review B, vol.69, issue.12, p.125415, 2004.

S. Cheng, Quantification of the boron speciation in alkali borosilicate glasses by electron energy loss spectroscopy, Scientific Reports, vol.5, p.17526, 2015.

R. A. Youngman and J. H. Harris, Luminescence Studies of Oxygen-Related Defects In Aluminum Nitride, Journal of the American Ceramic Society, vol.73, issue.11, pp.3238-3246, 1990.

R. Jones and B. Hourahine, Theoretical Modelling of Rare Earth Dopants in GaN, Rare Earth Doped III-Nitrides for, pp.1-24, 2010.

J. M. Mäki, Identification of the V Al-O N defect complex in AlN single crystals, Physical Review B, vol.84, issue.8, p.81204, 2011.

Q. Yan, Origins of optical absorption and emission lines in AlN, Applied Physics Letters, vol.105, issue.11, p.111104, 2014.

A. Sedhain, Photoluminescence properties of AlN homoepilayers with different orientations, Applied Physics Letters, vol.93, issue.4, p.41905, 2008.

B. Berzina, Spectral characterization of bulk and nanostructured aluminum nitride, Journal of Nanophotonics, vol.3, issue.1, pp.31950-031950, 2009.

N. Nepal, Photoluminescence studies of impurity transitions in AlGaN alloys, Applied Physics Letters, vol.89, issue.9, p.92107, 2006.

K. B. Nam, Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys, Applied Physics Letters, vol.86, issue.22, p.222108, 2005.

T. Hoshi, Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy. physica status solidi (c), pp.2129-2132, 2008.

P. Lu, Different optical absorption edges in AlN bulk crystals grown in m-and corientations, Applied Physics Letters, vol.93, issue.13, p.131922, 2008.

A. Paul, M. Mulholland, and M. S. Zaman, Ultraviolet absorption of cerium(III) and cerium(IV) in some simple glasses, Journal of Materials Science, vol.11, issue.11, pp.2082-2086, 1976.

A. Herrmann, Spectroscopic properties of cerium-doped aluminosilicate glasses, Optical Materials Express, vol.5, issue.4, pp.720-732, 2015.

M. Brandily-anne, Specific absorption spectra of cerium in multicomponent silicate glasses, Journal of Non-Crystalline Solids, vol.356, pp.2337-2343, 2010.

X. He, Effects of local structure of Ce 3+ ions on luminescent properties of Y 3 Al 5 O 12 :Ce nanoparticles, Scientific Reports, vol.6, p.22238, 2016.

B. Dierre, Blue emission of Ce 3+ in lanthanide silicon oxynitride phosphors, Journal of Materials Research, vol.22, issue.7, pp.1933-1941, 2007.

O. Donnell, ;. , K. , and V. Dierolf, Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications, vol.124, 2010.

S. Schweizer, Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics. physica status solidi (b), vol.219, pp.171-180, 2000.

G. A. Landrum, Electronic Structure and Bonding in Cerium (Nitride) Compounds: Trivalent versus Tetravalent Cerium, vol.5, pp.515-522, 1999.

A. E. Giba, Strong room-temperature blue emission from rapid-thermal annealed cerium-doped aluminum (oxy)nitride thin films, 2017.

X. J. Fan, AlN and ?-Al 2 O 3 : A comparison of microelectron energy loss spectra with theory, vol.7, p.214, 1998.

C. Ma, High reliable and chromaticity-tunable flip-chip w-LEDs with Ce:YAG glassceramics phosphor for long-lifetime automotive headlights applications, Optical Materials, vol.69, pp.105-114, 2017.

J. Ueda, Insight into the Thermal Quenching Mechanism for Y3Al5O12:Ce3+ through Thermoluminescence Excitation Spectroscopy, The Journal of Physical Chemistry C, vol.119, issue.44, pp.25003-25008, 2015.

J. Ueda, K. Aishima, and S. Tanabe, Temperature and compositional dependence of optical and optoelectronic properties in Ce3+-doped Y3Sc2Al3?xGaxO12 (x=0, 1, 2, 3), Optical Materials, vol.35, issue.11, pp.1952-1957, 2013.

X. Liu, Broadband conversion of visible light to near-infrared emission by Ce3+, Yb3+codoped yttrium aluminum garnet, Optics Letters, vol.34, issue.22, pp.3565-3567, 2009.

P. Dorenbos and E. V. Kolk, Location of lanthanide impurity levels in the III-V semiconductor GaN, Applied Physics Letters, vol.89, issue.6, p.61122, 2006.

P. Dorenbos and E. V. Kolk, Lanthanide impurity level location in GaN, AlN, and ZnO in Gallium Nitride Materials and Devices II, pp.647313-647314, 2007.

M. A. Shvaleva, Ce3+:YAG doped glass-ceramics for white light-emitting diode, Optical Review, vol.21, issue.5, pp.683-686, 2014.

R. Xie, Nitride Phosphors and Solid-State Lighting, 2011.

P. Haumesser, Determination of laser parameters of ytterbium-doped oxide crystalline materials, Journal of the Optical Society of America B, vol.19, issue.10, pp.2365-2375, 2002.

H. Ennen, G. Pomrenke, and A. Axmann, Luminescence of the rare-earth ion ytterbium in InP, GaP, and GaAs, Journal of Applied Physics, vol.57, issue.6, pp.2182-2185, 1985.

T. Ishiyama, 4f-shell configuration of Yb in InP studied by electron spin resonance, Journal of Applied Physics, vol.82, issue.9, pp.4457-4460, 1997.

M. Godlewski, Excitation and recombination processes of Yb in InP and InAsP, Journal of Alloys and Compounds, vol.225, issue.1, pp.564-566, 1995.

H. J. Lozykowski, A. K. Alshawa, and I. Brown, Kinetics and quenching mechanisms of photoluminescence in Yb-doped InP, Journal of Applied Physics, vol.76, issue.8, pp.4836-4846, 1994.

W. M. Jadwisienczak and H. J. Lozykowski, Optical properties of Yb ions in GaN epilayer, Optical Materials, vol.23, issue.1-2, pp.175-181, 2003.

M. Dammak, Theoretical investigations of the optical spectra and EPR parameters for Yb3+ ions in GaN epilayer, Journal of Alloys and Compounds, vol.432, issue.1-2, pp.18-22, 2007.

R. Weingärtner, Thermal activation, cathodo-and photoluminescence measurements of rare earth doped, Optical Materials, vol.28, issue.6, pp.790-793, 2006.

A. E. Giba, Strong Room Temperature Blue Emission from Rapid Thermal Annealed Cerium-Doped Aluminum (Oxy)Nitride Thin Films, ACS Photonics, vol.4, issue.8, pp.1945-1953, 2017.

J. Sun, Photoluminescence and its time evolution of AlN thin films, Physics Letters A, vol.280, pp.381-385, 2001.

T. Koubaa, Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN, Journal of Alloys and Compounds, pp.56-60, 2010.

J. Dong, Dependence of the Yb3+ emission cross section and lifetime on temperature and concentration in yttrium aluminum garnet, Journal of the Optical Society of America B, vol.20, issue.9, pp.1975-1979, 2003.

K. V. Krishnaiah, Fluorescence and Spectroscopic Properties of Yb3+-Doped Phosphate Glasses, Physics Procedia, vol.29, pp.109-113, 2012.

K. Takaichi, Yb3+-doped Y3Al5O12 ceramics-A new solid-state laser material. physica status solidi (a), vol.200, pp.5-7, 2003.

P. Lacovara, Room-temperature diode-pumped Yb:YAG laser, Optics Letters, vol.16, issue.14, pp.1089-1091, 1991.

L. E. Batay, Efficient tunable laser operation of diode-pumped Yb,Tm:KY(WO4)2 around 1.9 ?m, Applied Physics B, vol.75, issue.4, pp.457-461, 2002.

F. Balembois, Line competition in an intracavity diode-pumped Yb:KYW laser operating at 981nm, Journal of the Optical Society of America B, vol.28, issue.1, pp.115-122, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00819215

Q. Wang, NIR Enhancement Based on Energy Transfer Process of Ce3+-Yb3+ in Inverse Opal Photonic Crystals, Journal of the American Ceramic Society, vol.99, issue.3, pp.911-916, 2016.

K. S. Kumar, Enhancement of the near-infrared emission of Ce3+-Yb3+ co-doped Y3Al5O12 phosphors by doping Bi3+ ions, vol.7, pp.24674-24678, 2017.

L. Zhou, Spectral Properties and Energy Transfer between Ce3+ and Yb3+ in the Ca3Sc2Si3O12 Host: Is It an Electron Transfer Mechanism?, The Journal of Physical Chemistry A, vol.120, issue.28, pp.5539-5548, 2016.

F. Artizzu, Controlling Nd-to-Yb energy transfer through a molecular approach, Journal of Materials Chemistry C, vol.3, issue.43, pp.11524-11530, 2015.

K. Thonke, On excitation and decay mechanisms of the Yb 3+ luminescence in InP. Semiconductor Science and Technology, vol.5, p.1124, 1990.

J. B. Gruber, Crystal-field splitting of Pr3+ (4f 2) energy levels in GaN, Journal of Applied Physics, vol.89, issue.12, pp.7973-7976, 2001.

J. B. Gruber, Spectroscopic properties of Sm3+(4f 5) in GaN, Journal of Applied Physics, vol.91, issue.5, pp.2929-2935, 2002.

J. B. Gruber, Spectra and energy levels of Tm 3+ (4f 12 ) in AlN, Physical Review B, vol.70, issue.24, p.245108, 2004.

J. B. Gruber, Crystal field and Zeeman splittings for energy levels of Nd3+ in hexagonal AlN, Optical Materials Express, vol.2, issue.9, pp.1176-1185, 2012.

T. Kallel, Optical studies and crystal field calculation of GaN nanorods doped with Yb3+ ions, Journal of Alloys and Compounds, vol.609, pp.284-289, 2014.

H. J. Lozykowski and W. M. Jadwisienczak, Thermal quenching of luminescence and isovalent trap model for rare-earth-ion-doped AlN. physica status solidi (b), vol.244, pp.2109-2126, 2007.

D. Chen, Ultraviolet-blue to near-infrared downconversion of Nd3+-Yb3+ couple, Optics Letters, vol.35, issue.2, pp.220-222, 2010.

L. Aarts, Downconversion for the Er3+, Yb3+ couple in KPb2Cl5-A low-phonon frequency host, Journal of Luminescence, vol.131, issue.4, pp.608-613, 2011.

H. Lin, Down-Conversion From Blue to Near Infrared in Tm 3+-Yb 3+ Codoped Y 2 O 3 Transparent Ceramics, IEEE Photonics Technology Letters, vol.22, issue.12, pp.866-868, 2010.

Y. Xu, Efficient Near-Infrared Down-Conversion in Pr3+-Yb3+ Codoped Glasses and Glass Ceramics Containing LaF3 Nanocrystals, The Journal of Physical Chemistry C, vol.115, issue.26, pp.13056-13062, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00719672

Z. Liu, Efficient near-infrared quantum cutting in Ce3+-Yb3+ codoped glass for solar photovoltaic, Solar Energy Materials and Solar Cells, vol.122, pp.46-50, 2014.

D. Chen, Quantum cutting downconversion by cooperative energy transfer from Ce3+ to Yb3+ in borate glasses, Journal of Applied Physics, vol.104, issue.11, p.116105, 2008.

J. Ueda and S. Tanabe, Visible to near infrared conversion in Ce3+-Yb3+ Co-doped YAG ceramics, Journal of Applied Physics, vol.106, issue.4, p.43101, 2009.

H. Lin, Near infrared quantum cutting in heavy Yb doped Ce0.03Yb3xY(2.97?3x)Al5O12 transparent ceramics for crystalline silicon solar cells, Journal of Applied Physics, vol.107, issue.4, p.43107, 2010.

W. Strek, P. Deren, and A. Bednarkiewicz, Cooperative processes in KYb(WO4)2 crystal doped with Eu3+ and Tb3+ ions, Journal of Luminescence, vol.87, pp.999-1001, 2000.

W. Str?k, A. Bednarkiewicz, and P. J. Dere?, Power dependence of luminescence of Tb3+doped KYb(WO4)2 crystal, Journal of Luminescence, vol.92, issue.3, pp.229-235, 2001.

I. A. Terra, Down-conversion process in Tb3+-Yb3+ co-doped Calibo glasses, Journal of Luminescence, vol.132, issue.7, pp.1678-1682, 2012.

C. Jiang, Q. Zeng, and F. Gan, Dependence of spectroscopic properties on ytterbium ion concentration in glasses, 2000.

P. Dirk and S. P. Frederic, Methods for the determination of the optical constants of thin films from single transmission measurements: a critical review, Journal of Physics D: Applied Physics, vol.36, issue.15, p.1850, 2003.

H. Joo, Spectrophotometric analysis of aluminum nitride thin films, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.17, pp.862-870, 1999.

H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications, 2007.

I. Roskovcová, J. Pastr?áak, and R. Babu?kováa, The Dispersion of the Refractive Index and the Birefringence of AlN. physica status solidi (b), vol.20, pp.29-32, 1967.

E. Dogheche, Growth and optical characterization of aluminum nitride thin films deposited on silicon by radio-frequency sputtering, Applied Physics Letters, vol.74, issue.9, pp.1209-1211, 1999.

R. Martin, Optical characterization of Al-and N-polar AlN waveguides for integrated optics, Applied Physics Express, vol.8, issue.4, p.42603, 2015.

Y. Fujii, Nonlinear optical susceptibilities of AlN film, Applied Physics Letters, vol.31, issue.12, pp.815-816, 1977.

S. Shokhovets, Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry, Journal of Applied Physics, vol.94, issue.1, pp.307-312, 2003.

V. I. Gavrilenko and R. Q. Wu, Linear and nonlinear optical properties of group-III nitrides, Physical Review B, vol.61, issue.4, pp.2632-2642, 2000.

G. Rossbach, Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge, Physical Review B, vol.83, p.195202, 2011.

M. Feneberg, Anisotropic absorption and emission of bulk $(1\overline{1}00)$ AlN, Physical Review B, vol.87, issue.23, p.235209, 2013.

Y. Taniyasu and M. Kasu, Surface 210 nm light emission from an AlN p-n junction lightemitting diode enhanced by A-plane growth orientation, Applied Physics Letters, vol.96, issue.22, p.221110, 2010.

G. E. Stan, Highly textured (001) AlN nanostructured thin films synthesized by reactive magnetron sputtering for SAW and FBAR applications, Digest Journal of Nanomaterials and Biostructures, vol.5, issue.4, 2010.

D. Balzar and . X-ray, Diffraction Line Broadening: Modeling and Applications to High-T(c) Superconductors, Journal of Research of the National Institute of Standards and Technology, vol.98, issue.3, pp.321-353, 1993.