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, La première perspective de poursuite de ce travail serait l'étude électrique approfondie des modules réalisés pour estimer les rendements atteints avec ce procédé d'assemblage

, Il conviendrait notamment de reproduire les mesures des résistances aux interfaces. Par la suite, à partir des propriétés mesurées

, Une des premières optimisations pourrait être d'utiliser les matériaux de jonctions FeSi 2 près de la source froide et de FeSi 2 +Si ou Si-Ge près de la zone chaude

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. .. Schéma,

K. .. , Rendement théorique en fonction de zT pour diérents ?T et une tempé-rature T h de 300

, Schéma représentant les constantes thermoélectriques pour diérents types de matériaux en fonction de la concentration de porteurs de charges, p.12

, Facteurs de mérite des meilleurs matériaux thermoélectriques [15, p.16

. .. , Eet de la dimensionnalité sur la densité d'état [21], vol.18

, Schéma d'un module segmenté composé de deux matériaux de type n et 3

I. ,

S. Structure-de-bande-de, , vol.51, p.53

, Conductivité thermique de SiGe en fonction de la composition, p.22

I. , Diagramme de phases binaire Mn-Si

, à droite est représentée la vision échelle de cheminée)

]. .. , 27 I.13 Schéma représentant la densité d'états de FeSi (à gauche) et ?-FeSi 2 [80] (à droite), I.12 Schéma représentant la structure cristallographique de ?-FeSi 2 [78

I. , 15 Facteurs de mérite de quelques siliciures thermoélectriques, p.30

]. .. , Quelques résistivités des disiliciures métalliques [94, p.31

, 17 Schéma représentant le diagramme de phases du système Mn-Fe-Si

I. , 18 Schéma représentant le diagramme de phases du système Ti-Fe-Si

, 20 Schéma représentant les chemins d'oxydation possibles selon Kurokawa et

, II.1 Schéma (à gauche) et macrographie (à droite) du four à induction haute fréquence

, Schéma représentant l'évolution de la densité relative d'un matériau au cours de la densication

, Schéma d'une matrice de frittage carbone

, Schéma (à gauche) et macrgraphie (à droite) d'une thermobalance symétrique 60

. .. , Énergie totale calculée en fonction du maillage de l'espace réciproque pour les composés Ti 4 Co 4 Si 7 (à gauche) et Ti 3 Co 3 CrSi 6 (à droite), p.68

, Énergie totale calculée en fonction de l'énergie de coupure, p.70

, Exemple de courbe de dispersion des phonons

, 1 Paramètre a en fonction de la teneur en Cr de X 3 T 3 CrSi 6, p.89

, Paramètre c en fonction de la teneur en Cr de X 3 T 3 CrSi 6, p.89

, III.3 ? r H calculée pour Nb 4 Fe 4 Si 7

, 5 ? r H avec interaction de van der Waals pour le système Nb-Co, p.92

, Diractogrammes des rayons X reconstruits à partir de l'anement Rietveld de Ti 3 Fe 3 MnSi 6 , Ti 2 Fe 3 MnSi 5 et TiFeSi 2

, Courbe d'analyse thermodiérentielle de Ti 3 Fe 3 MnSi 6

, Structure de bande de Si calculée avec la fonctionnelle PBE, p.98

, 10 Structure de bande de Si calculée avec la fonctionnelle HSE06, p.98

. .. %-de-ge, 11 zT e calculé pour SiGe pour une teneur de 12, p.99

. .. %-de-ge, 12 zT e calculé pour SiGe pour une teneur de 15, p.99

, 13 zT e calculé pour SiGe pour une teneur de 25 % de Ge, p.100

, 14 zT e calculé pour SiGe pour une teneur de 31 % de Ge, p.100

, III.15 Structure de bande (à gauche) et DOS (à droite) de Mn 4 Si, p.100

, 16 Structure de bande de ?-FeSi 2 calculée à l'aide de la fonctionnelle mBJ, p.101

, Structure de bande (à gauche) et DOS (à droite) de FeSi 2, vol.17, p.102

, 18 Coecients Seebeck le long de l'axe c (à gauche) et dans le plan (a,b) (à droite) de Mn 4 Si 7

, III.19 ? de Mn 4 Si 7 en fonction du potentiel chimique des électrons, p.104

, 20 zT e de Mn 4 Si 7 en fonction du potentiel chimique des électrons, p.104

, III.21 zT e de Mn 4 Si

, 22 ? FeSi 2 en fonction de la température

, 23 zT e FeSi 2 en fonction du potentiel chimique des électrons, p.106

, 24 zT e FeSi 2 en fonction de la concentration de porteurs, p.106

, 26 Coecient Seebeck de CrSi 2 en fonction du potentiel chimique des électrons107 III.27 Courbe de dispersion des phonons calculée pour ?-FeSi 2, p.108

, 28 Courbe de dispersion des phonons calculée pour Mn 4 Si 7, p.109

, 29 ? p calculé pour FeSi 2 en fonction de la température, p.110

, 30 ? p calculé pour MnSi 1,7 en fonction de la température, p.110

. .. , 31 Densités d'états des composés de formule XTSi 2 (états/eV), p.113

, 116 III.37 Densité d'états de Ti(Mn 1?x Fe x )Si 2 pour diérentes teneurs en Mn, p.116

.. .. Si,

.. .. Si, III.40 ? ? et ? ? (Mn 0,5 Fe 0,5 )
URL : https://hal.archives-ouvertes.fr/cea-00819299

, Diractogramme des rayons X de FeSi 2 fritté à 900°C sous 27MPa, p.129

, Diractogrammes des rayons X de FeSi 2 post-frittage à 1100°C sous 27

, MPa et après 4 heures de recuit à 900°C

, (à gauche) et TiFeSi 2 (à droite) frittés à 1050°C pendant 4 h, Diractogrammes des rayons X de MnSi, vol.1

, Diractogrammes des rayons X de TiMnSi 2 (à gauche) et TiSi 2 (à droite) frittés aux conditions présentées au Tableau IV

, Tomographies de MnSi 1,7 fritté par méthode SPS d'une compacité nale de 82% (à gauche) et de 86% (à droite)

, Tomographies de MnSi 1,7 fritté par méthode SPS d'une compacité nale de 90% (à gauche) et de 94% (à droite)

. .. Harmonique, 135 IV.8 Coecients Seebeck mesurés de MnSi 1,7 frittés par SPS à diérentes compacité

, 135 IV.10 Prises de masses de MnSi 1,7 oxydés à 900°C pendant 100 h, 136 IV.11 Coupe MEB post mortem de MnSi 1,7 SPS 82% de compacité pendant, p.100

9. .. ,

, Diractogrammes des rayons X de MnSi 1,7 d'une compacité de 90% (à gauche) et de 82% (à droite) oxydés à 900°C pendant 100h, p.138

, IV.13 Diractogrammes des rayons X de FeSi 2 (à gauche) et MnSi 1,7 (à droite) oxydés à 900°C pendant 750 h

. Iv, Diractogrammes des rayons X de TiFeSi 2 (à gauche) TiMnSi 2 (à droite) oxydés à 900°C pendant 750 h

. Iv, 15 Diractogramme des rayons X de CrSi 2 oxydé à 900°C pendant 750 h, p.140

, Mn 0,5 Fe 0,5 )Si oxydé à 900°C pendant 100 h, IV, vol.16

, Coupes MEB des diérents siliciures oxydés à 900°C pendant 750 h sous air

. Iv, 18 Prises de masse par thermogravimétrie des siliciures étudiés à 900°C pendant 100 h

. Iv, Prises de masse à 900°C en fonction de ? t

. Iv, Prises de masse en oxydation cyclique des siliciures à 900°C pendant 500 cycles d'une heure

. .. Iv-;, 21 Coupes MEB TiMnSi 2 après oxydation isotherme 900°C 750 h (à gauche) et après oxydation cyclique 900°C 500 cycles (à droite), p.145

. Iv, 22 Coupe MEB de TiFeSi 2 après oxydation cyclique 900°C 500 cycles, p.145

, 23 Coupe MEB d'un couple de diusionMnSi 1,7 /FeSi 2 sous vide pendant 85

9. .. ,

, Module thermoélectrique vertical avec séparateur en poudre MgO fritté pendant 2 h 30 à 1050°C sous 60 MPa

V. , Macrographie d'un module vieilli en condition cyclique à 900°C pendant 60 cycles de 1 jour

, (à gauche) et TiSi 2 /FeSi 2 d'un module vieilli 50 h à 900°C, Coupes MEB des interfaces TiSi 2 /MnSi, vol.1

, (à gauche) et TiFeSi 2 /FeSi 2 d'un module vieilli 50 h à 900°C, Coupes MEB des interfaces TiMnSi 2 /MnSi, vol.1

, Diagrammes de phases des systèmes Ti-Fe-Si et Ti-Mn-Si à 900°C, p.178

V. , Représentation du chemin de diusion de la diagramme Ti-Mn-Si, p.179

, Résumé des paramètres de frittage SPS issus de la littérature, p.26

, Maillages des espaces réciproques de quelques composés étudiés dans ce travail

, Énergies de cohésion des éléments purs calculées à l'aide de la fonctionnelle PBE et comparées à la littérature

, 1 Paramètres des anements par méthode Rietveld des 6 composés étudiés, vol.88

, Mn)Si 2 et Ti 2 Mn 4 Si 5 obtenus par anement Rietveld

, Gaps calculés sur Si-Ge pour les fonctionnelles PBE et HSE06, p.99

, III.5 paramètres de maille de la structure relaxée de Mn 4 Si, p.100

, Paramètres de maille de la structure relaxée de FeSi 2, p.102

, Vitesses de groupe à partir des branches acoustiques de FeSi 2, p.111

, IV.1 Tableau récapitulant les conditions de frittage mise en oeuvre pour les siliciures de l'étude

. .. , Paramètres de frittage SPS utilisés sur MnSi 1,7, p.133

, Résumés des constantes paraboliques de vitesse pour les diérents régimes observés à 900°C pendant 100 h

, Compositions chimiques moyennes des deux phases des domaines biphasés des deux interfaces

B. , Enthalpies de migration des diérents éléments

C. Annexe, Tenseurs élastiques des siliciures 200

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