RICHES EN PHOSPHORE III.2.1. Étude de la microstructure des films minces déposés sur substrat SOI et recuits à 1100?C ,
, Étude vibrationnelle des films minces déposés sur SOI, p.185
Étude vibrationnelle des particules de SiP 2 À notre connaissance, aucune étude n'a concerné, à ce jour, la formation de nanoparticules de SiP 2, Seules des études structurales ,
15: a) Spectres FTIR d'un film mince de SiO 1,5 recuit à 1100?C pendant 5 ,
SiO 2 sans phosphore (en noir) et contenant 10 at.% de phosphore (en rouge), d'un film mince de SiO 1,5 contenant 10 at.% de phosphore sans barrière de SiO 2 (en vert) et spectre FTIR calculé pour une structure de ,
, SiP 2 orthorhombique (en magenta). b) Zoom des spectres dans la région où doit apparaitre la signature vibrationnelle de SiP 2
La figure V.15 a) présente les spectres d'absorption infrarouge de films minces de SiO 1,5 recuits à 1100?C avec une barrière de SiO 2 sans phosphore (en noir) et contenant 10 at.% de phosphore (en rouge), sans barrière de SiO 2 contenant 10 at.% de phosphore (en vert) et le spectre calculé pour la phase orthorhombique (Pbam (55)) 3 de SiP 2 . La mise en place de la barrière de diffusion est très efficace et supprime totalement l'absorption due aux porteurs libres présents dans le substrat. Ainsi, en zoomant dans la région où il y a des contributions vibrationnelles (figure V.15 b)), les contributions des vibrations Si-O-Si sont observées avec l'élongation asymétrique en phase à 1080 cm -1 , le balancement à 460 cm -1 et l'élongation symétrique à 800 cm -1 . Les spectres avec ou sans phosphore ont exactement les mêmes signatures vibrationnelles, les dépôts ont été réalisés sur substrat de silicium recouvert par une couche barrière de silice de 5 nm afin de supprimer la diffusion du phosphore dans le substrat ,
,
Propriétés de luminescence de films d'oxyde de silcium dopés à l'erbium ,
, , 2007.
, Etude des mécanismes de photoluminescence dans les nitrures et oxydes de silicium dopés aux terres rares, 2012.
Elaboration et caractérisation de films d'oxynitrure de silicium dopés cérium et ytterbium : applications aux diodes électroluminescentes et au découpage quantique pour les cellules solaires, 2017. ,
Rare earth doped si based frequency conversion layer for si solar cell, 2016. ,
URL : https://hal.archives-ouvertes.fr/tel-01425297
Propriétés de luminescence et caractérisation structurale de films minces d'oxydes de silicium dopés au cérium et codopés cérium-ytterbium, 2014. ,
, European Photovoltaic Solar Energy Conference. Espagne, 2005.
Photoluminescence in crystalline silicon quantum wells, Journal of Applied Physics, vol.101, issue.2, p.24321, 2007. ,
Surface plasmon enhanced silicon solar cells, Journal of Applied Physics, vol.101, issue.9, p.93105, 2007. ,
Optical gain in silicon nanocrystals, Nature, vol.408, issue.6811, pp.440-444, 2000. ,
Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication, Scientific Reports, vol.6, issue.1, p.22888, 2016. ,
PhosphorusDoped Silicon Nanocrystals Exhibiting Mid-Infrared Localized Surface Plasmon Resonance, Nano Letters, vol.13, issue.3, pp.1317-1322, 2013. ,
Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus, Nano Letters, vol.15, issue.8, pp.5597-5603, 2015. ,
,
Comparative Study on the Localized Surface Plasmon Resonance of Boron-and Phosphorus-Doped Silicon Nanocrystals, ACS Nano, vol.9, issue.1, pp.378-386, 2015. ,
, Doped Silicon Nanocrystal Plasmonics. ACS Photonics, vol.4, issue.4, pp.963-970, 2017.
,
Diffusion doping route to plasmonic ,
URL : https://hal.archives-ouvertes.fr/hal-02174401
, , vol.8, pp.18896-18903, 2018.
, WebElements Periodic Table » Silicon » the essentials
Optical determination of the valley-orbit splitting of the ground state of donors in silicon, Solid State Communications, vol.2, issue.6, pp.163-166, 1964. ,
Redetermination of the valley-orbit (chemical) splitting of the 1 s ground state of group-V donors in silicon, Physical Review B, vol.48, issue.15, pp.10893-10898, 1993. ,
Ab initio calculation of energy levels for phosphorus donors in silicon, Scientific Reports, vol.7, issue.1, p.6010, 2017. ,
A quenched-in defect in boron-doped silicon, Journal of Applied Physics, vol.48, issue.11, pp.4821-4822, 1977. ,
Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons, Physical Review B, vol.15, issue.8, pp.3836-3843, 1977. ,
Laser induced sponge-like Si in Si-rich oxides for photovoltaics, Optics Express, vol.21, issue.20, p.24368, 2013. ,
Photoluminescence of Si-Rich SiO 2 $ Films : Si Clusters as Luminescent Centers, Japanese Journal of Applied Physics, vol.32, issue.9A, pp.3840-3845, 1993. ,
Experimental Proof of the Existence of a New Electronic Complex in Silicon, Physical Review Letters, vol.4, issue.7, pp.361-363, 1960. ,
Experimental Observation of the Excitonic Molecule, Physical Review Letters, vol.17, issue.16, pp.860-862, 1966. ,
Electronic States and Luminescence in Porous Silicon Quantum Dots : The Role of Oxygen, Physical Review Letters, vol.82, issue.1, pp.197-200, 1999. ,
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.48, issue.15, pp.11024-11036, 1993. ,
Influence of the annealing treatments on the luminescence properties of SiO/SiO2 multilayers, Journal of Applied Physics, vol.100, issue.12, p.123504, 2006. ,
URL : https://hal.archives-ouvertes.fr/hal-02164235
Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures, Journal of Applied Physics, vol.106, issue.2, p.23501, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-02164248
Size-controlled highly luminescent silicon nanocrystals : A SiO/SiO2 superlattice approach, Appl. Phys. Lett, vol.80, issue.4, pp.661-663, 2002. ,
Hirofumi Tomita, and Naoki Yokoyama. Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol.35, issue.2B, pp.189-191, 1996. ,
Silicon quantum dot nucleation on Si3n4, SiO2 and SiOxNy substrates for nanoelectronic devices, Journal of Crystal Growth, vol.209, pp.1004-1008, 2000. ,
Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition, Thin Solid Films, vol.369, issue.1-2, pp.55-59, 2000. ,
Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot Nucleation, Journal of The Electrochemical Society, vol.150, issue.3, p.203, 2003. ,
Fabrication et caractérisation de nanocristaux de silicium encapsulés dans des matrices siliciées amorphes : rôle des interfaces et de la matrice sur les propriétés structurales, optiques et électriques, 2013. ,
Micro-emulsion synthesis of monodisperse surface stabilized silicon nanocrystals, Chemical Communications, issue.14, p.1833, 2005. ,
,
, Silicon nanocrystals : Novel synthesis routes for photovoltaic applications. physica status solidi (a), vol.210, pp.649-657, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01758292
, Nonthermal Plasma Synthesis of Nanocrystals : Fundamental Principles, Materials, and Applications, vol.116, pp.11061-11127, 2016.
The influence of the annealing conditions on the photoluminescence of ion-implanted SiO 2 : Si nanosystem at additional phosphorus implantation ,
, Physica E : Low-dimensional Systems and Nanostructures, vol.16, issue.3, pp.410-413, 2003.
Implantation of P ions in SiO2 layers with embedded Si nanocrystals, Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol.222, pp.497-504, 2004. ,
Naoki Fukata, and Shun-ichi Hishita. Phosphorus ion implantation in silicon nanocrystals embedded in SiO2, Journal of Applied Physics, vol.105, issue.5, p.54307, 2009. ,
Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore R ) embedded in ALD-alumina for non-volatile memory devices. Surface and Coatings Technology, vol.201, pp.9209-9214, 2007. ,
Photoluminescence from Si nanocrystals dispersed in phosphosilicate glass thin films : improvement of photoluminescence efficiency, Applied physics letters, vol.75, issue.2, pp.184-186, 1999. ,
Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping : An electron spin resonance study, Journal of Applied Physics, vol.87, issue.4, pp.1855-1857, 2000. ,
Photoluminescence and freeelectron absorption in heavily phosphorus-doped Si nanocrystals, Physical Review B, vol.62, issue.19, p.12625, 2000. ,
DOI : 10.1103/physrevb.62.12625
Hyperfine structure of the electron spin resonance of phosphorus-doped Si nanocrystals, Physical review letters, vol.89, issue.20, p.206805, 2002. ,
Optical properties of PECVD erbiumdoped silicon-rich silica : evidence for energy transfer between silicon microclusters and erbium ions, Journal of Physics : Condensed Matter, vol.6, issue.21, pp.319-324, 1994. ,
Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice, Japanese Journal of Applied Physics, vol.46, issue.35, pp.833-835, 2007. ,
DOI : 10.1143/jjap.46.l833
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix, Journal of Alloys and Compounds, vol.509, issue.9, pp.3963-3966, 2011. ,
DOI : 10.1016/j.jallcom.2010.12.191
Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size, Scientific Reports, vol.7, issue.1, p.863, 2017. ,
Caractérisation structurale et optique du silicium amorphe hydrogène et des oxydes de silicium photoluminescents élaborés par évaporation, 1999. ,
Elaboration et étude de la structure et des mécanismes de luminescence de nanocristaux de silicium de taille contrôlée, 2005. ,
Self-Purification in Semiconductor Nanocrystals, Physical Review Letters, vol.96, issue.22, p.226802, 2006. ,
DOI : 10.1103/physrevlett.96.226802
First-principles study of n -and p -doped silicon nanoclusters, Physical Review B, vol.72, issue.11, 2005. ,
DOI : 10.1103/physrevb.72.113303
Critical Role of Dopant Location for P-Doped Si Nanocrystals, The Journal of Physical Chemistry C, vol.115, issue.3, pp.661-666, 2011. ,
DOI : 10.1021/jp1102934
Size Limits on Doping Phosphorus into Silicon Nanocrystals, Nano Lett, vol.8, issue.2, pp.596-600, 2008. ,
DOI : 10.1021/nl072997a
First-Principles Study of 2.2 nm Silicon Nanocrystals Doped with Boron, The Journal of Physical Chemistry C, vol.115, issue.20, pp.9838-9843, 2011. ,
Size dependence of phosphorus doping in silicon nanocrystals, Nanotechnology, vol.27, issue.42, p.425710, 2016. ,
DOI : 10.1088/0957-4484/27/42/425710
Simultaneously B-and P-doped silicon nanoclusters : Formation energies and electronic properties, Applied Physics Letters, vol.87, issue.17, p.173120, 2005. ,
DOI : 10.1063/1.2119424
Preferential Positioning of Dopants and Co-Dopants in Embedded and Freestanding Si Nanocrystals, Journal of the American Chemical Society, vol.136, issue.11, pp.4404-4409, 2014. ,
DOI : 10.1021/ja5002357
URL : http://arxiv.org/pdf/1505.07351
,
, The effect of oxidation. physica status solidi (a), vol.209, pp.1847-1850, 2012.
Boron doped Si nanoparticles : the effect of oxidation : Boron doped Si nanoparticles. physica status solidi (b), vol.250, pp.1799-1803, 2013. ,
Energetics and carrier transport in doped Si/SiO2 quantum dots ,
, Nanoscale, vol.7, issue.29, pp.12564-12571, 2015.
The BSi (Boron Silicon) system, Bulletin of Alloy Phase Diagrams, vol.5, issue.5, pp.478-484, 1984. ,
The P Si (Phosphorus Silicon) system, Bulletin of Alloy Phase Diagrams, vol.6, issue.2, pp.130-133, 1985. ,
Modeling of Thermodynamic Properties and Phase Equilibria of the Si-P System, Journal of Phase Equilibria and Diffusion, vol.35, issue.1, pp.24-35, 2014. ,
Steady-state solubility of substitutional impurities in silicon, Physica Status Solidi (a), vol.101, issue.1, pp.123-127, 1987. ,
Efficient n-type doping of Si nanocrystals embedded in SiO 2 $ by ion beam synthesis, Applied Physics Letters, vol.102, issue.1, p.13116, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00799830
Phosphorus and boron codoping of silicon nanocrystals by ion implantation : Photoluminescence properties, Physical Review B, vol.85, issue.4, p.45441, 2012. ,
Doping of B atoms into Si nanocrystals prepared by rf cosputtering, Solid State Communications, vol.100, issue.4, pp.227-230, 1996. ,
Effects of boron doping on the structural and optical properties of silicon nanocrystals in a silicon dioxide matrix, Nanotechnology, vol.19, issue.42, p.424019, 2008. ,
Photoluminescence from B-doped Si nanocrystals, Journal of Applied Physics, vol.83, issue.12, pp.7953-7957, 1998. ,
Below bulk-band-gap photoluminescence at room temperature from heavily P-and B-doped Si nanocrystals, Journal of Applied Physics, vol.94, issue.3, pp.1990-1995, 2003. ,
Control of photoluminescence properties of Si nanocrystals by simultaneously doping nand p-type impurities, Applied Physics Letters, vol.85, issue.7, pp.1158-1160, 2004. ,
The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO 2 $$ multilayers, Applied Physics Letters, vol.110, issue.23, p.233105, 2017. ,
Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO 2 $ matrix, Applied Physics Letters, vol.100, issue.23, p.233115, 2012. ,
Phosphorus doping of ultra-small silicon nanocrystals, Nanotechnology, vol.21, issue.2, p.25602, 2010. ,
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Applied Physics Letters, vol.57, issue.10, pp.1046-1048, 1990. ,
Effect of boron ion implantation and subsequent anneals on the properties of Si nanocrystals, Semiconductors, vol.40, issue.1, pp.72-78, 2006. ,
Quenching of photoluminescence from Si nanocrystals caused by boron doping, Solid State Communications, vol.109, issue.9, pp.561-565, 1999. ,
,
, Acceptor-related low-energy photoluminescence from boron-doped Si nanocrystals, Journal of Applied Physics, vol.110, issue.6, p.63528, 2011.
,
Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix, Thin Solid Films, vol.517, issue.19, pp.5646-5652, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-01067625
Modulation of surface states by phosphorus to improve the optical properties of ultra-small Si nanocrystals, Nanotechnology, vol.28, issue.47, p.475704, 2017. ,
Electric field effect in ultrathin black phosphorus, Applied Physics Letters, vol.104, issue.10, p.103106, 2014. ,
Location and Electronic Nature of Phosphorus in the Si Nanocrystal SiO2 System, Scientific Reports, vol.5, issue.1, p.9702, 2015. ,
Biosensing with plasmonic nanosensors, Nanoscience and Technology, vol.7, p.12, 2009. ,
Localized Surface Plasmon Resonance Spectroscopy and Sensing, Annual Review of Physical Chemistry, vol.58, issue.1, pp.267-297, 2007. ,
Gold nanostructures : engineering their plasmonic properties for biomedical applications, Chemical Society Reviews, vol.35, issue.11, p.1084, 2006. ,
,
Plasmonic Nanoantennas : Fundamentals and Their Use in Controlling the Radiative Properties of Nanoemitters, Chemical Reviews, vol.111, issue.6, pp.3888-3912, 2011. ,
Plasmonics : Localization and guiding of electromagnetic energy in metal/dielectric structures, Journal of Applied Physics, vol.98, issue.1, p.11101, 2005. ,
Optical Properties of Metallic Nanoparticles : Basic Principles and Simulation, Springer Series in Materials Science, pp.131-147, 2016. ,
, Optical Properties of Noble Metals. II. Physical Review, vol.138, issue.2A, pp.494-507, 1965.
Plasmonic Energy Collection through Hot Carrier Extraction, Nano Letters, vol.11, issue.12, pp.5426-5430, 2011. ,
Photocatalytic Activity Enhanced by Plasmonic Resonant Energy Transfer from Metal to Semiconductor, Journal of the American Chemical Society, vol.134, issue.36, pp.15033-15041, 2012. ,
Plasmonics for improved photovoltaic devices, Nature Materials, vol.9, issue.3, pp.205-213, 2010. ,
A photovoltaic device structure based on internal electron emission, In Materials for Sustainable Energy, pp.85-87, 2010. ,
Photogeneration of hot plasmonic electrons with metal nanocrystals : Quantum description and potential applications, Nano Today, vol.9, issue.1, pp.85-101, 2014. ,
Plasmon-induced hot carrier science and technology, Nature Nanotechnology, vol.10, issue.1, pp.25-34, 2015. ,
Single-target molecule detection with nonbleaching multicolor optical immunolabels, Proceedings of the National Academy of Sciences, vol.97, issue.3, pp.996-1001, 2000. ,
DOI : 10.1073/pnas.97.3.996
URL : http://www.pnas.org/content/97/3/996.full.pdf
Light-Scattering Submicroscopic Particles as Highly Fluorescent Analogs and Their Use as Tracer Labels in Clinical and Biological Applications, Analytical Biochemistry, vol.262, pp.157-176, 1998. ,
DOI : 10.1006/abio.1998.2760
Tiny Particles Flag Scarce Proteins, Science, vol.301, issue.5641, pp.1827-1827, 2003. ,
DOI : 10.1126/science.301.5641.1827a
Towards advanced chemical and biological nanosensors-An overview, Talanta, vol.67, issue.3, pp.438-448, 2005. ,
Detection of a Biomarker for Alzheimer's Disease from Synthetic and Clinical Samples Using a Nanoscale Optical Biosensor, Journal of the American Chemical Society, vol.127, issue.7, pp.2264-2271, 2005. ,
Improving the Instrumental Resolution of Sensors Based on Localized Surface Plasmon Resonance, Analytical Chemistry, vol.78, issue.13, pp.4416-4423, 2006. ,
Single Silver Nanoparticles as Real-Time Optical Sensors with Zeptomole Sensitivity, Nano Letters, vol.3, issue.8, pp.1057-1062, 2003. ,
Biomolecular Recognition Based on Single Gold Nanoparticle Light Scattering, Nano Lett, vol.3, issue.7, pp.935-938, 2003. ,
Selective Colorimetric Detection of Polynucleotides Based on the Distance-Dependent Optical Properties of Gold Nanoparticles, Science, vol.277, issue.5329, pp.1078-1081, 1997. ,
Surface Raman spectroelectrochemistry, J. Electroanal. Chem, vol.84, pp.1-20, 1977. ,
Surface-enhanced Raman sensors : early history and the development of sensors for quantitative biowarfare agent and glucose detection, Journal of Raman Spectroscopy, vol.36, issue.6-7, pp.471-484, 2005. ,
Introductory Lecture : Surface enhanced Raman spectroscopy : new materials, concepts, characterization tools, and applications, Faraday Discuss, vol.132, pp.9-26, 2006. ,
DOI : 10.1039/b513431p
Spatially resolved surface enhanced second harmonic generation : Theoretical and experimental evidence for electromagnetic enhancement in the near infrared on a laser microfabricated Pt surface, The Journal of Chemical Physics, vol.90, issue.2, pp.1237-1252, 1989. ,
A surfaceenhanced hyper-Raman and surface-enhanced Raman scattering study of trans -1,2-bis(4-pyridyl)ethylene adsorbed onto silver film over nanosphere electrodes. Vibrational assignments : Experiment and theory, The Journal of Chemical Physics, vol.104, issue.11, pp.4313-4323, 1996. ,
DOI : 10.1063/1.471241
Surface-Enhanced Infrared Spectroscopy : A Comparison of Metal Island Films with Discrete and Nondiscrete Surface Plasmons, Appl. Spectrosc, vol.54, issue.3, pp.371-377, 2000. ,
Surface-enhanced spectroscopy, Reviews of Modern Physics, vol.57, issue.3, pp.783-826, 1985. ,
Enhanced Ratiometric pH Sensing Using SNAFL-2 on Silver Island Films : Metal-enhanced Fluorescence Sensing, Journal of Fluorescence, vol.15, issue.1, pp.37-40, 2005. ,
DOI : 10.1007/s10895-005-0211-0
URL : http://www.theinstituteoffluorescence.com/Publications pdf/42.pdf
Dependence of Fluorescence Intensity on the Spectral Overlap between Fluorophores and Plasmon Resonant Single Silver Nanoparticles, Nano Letters, vol.7, issue.3, pp.690-696, 2007. ,
Plasmonic tuning of optical fibers for biosensing, SPIE Newsroom, pp.2-4, 2011. ,
Collective Resonances in Gold Nanoparticle Arrays, Physical Review Letters, vol.101, issue.14, p.143902, 2008. ,
Tuning the Plasmonic Response up : Hollow Cuboid Metal Nanostructures, ACS Photonics, vol.3, issue.5, pp.770-779, 2016. ,
Optical dielectric function of silver, Physical Review B, vol.91, issue.23, p.235137, 2015. ,
Optical dielectric function of gold, Physical Review B, vol.86, issue.23, 2012. ,
Plasmonic gold mushroom arrays with refractive index sensing figures of merit approaching the theoretical limit, Nature Communications, vol.4, issue.1, p.2381, 2013. ,
Surface Plasmons on Metal Nanoparticles : The Influence of Shape and Physical Environment, The Journal of Physical Chemistry C, vol.111, issue.10, pp.3806-3819, 2007. ,
Plasmonic nanorod metamaterials for biosensing, Nature Materials, vol.8, issue.11, pp.867-871, 2009. ,
Fano-resonant asymmetric metamaterials for ultrasensitive spectroscopy and identification of molecular monolayers, Nature Materials, vol.11, issue.1, pp.69-75, 2012. ,
Shape effects in plasmon resonance of individual colloidal silver nanoparticles, The Journal of Chemical Physics, vol.116, issue.15, pp.6755-6759, 2002. ,
Local Refractive Index Dependence of Plasmon Resonance Spectra from Individual Nanoparticles, Nano Letters, vol.3, issue.4, pp.485-491, 2003. ,
Refractive Index Sensitivities of Noble Metal Nanocrystals : The Effects of Multipolar Plasmon Resonances and the Metal Type, The Journal of Physical Chemistry C, vol.115, issue.16, pp.7997-8004, 2011. ,
The Role of Hydrothermal Synthesis in Preparative Chemistry. Angewandte Chemie International Edition in English, vol.24, pp.1026-1040, 1985. ,
Hard soft acids bases (HSAB) principle and organic chemistry. Chemical Reviews, vol.75, 1975. ,
,
Compound Copper Chalcogenide Nanocrystals, Chemical Reviews, vol.117, issue.9, pp.5865-6109, 2017. ,
Chemical Control of Plasmons in Metal Chalcogenide and Metal Oxide Nanostructures, Advanced Materials, vol.27, issue.38, pp.5830-5837, 2015. ,
Nanoparticle plasmonics : going practical with transition metal nitrides, Materials Today, vol.18, issue.4, pp.227-237, 2015. ,
Tight-Binding Calculations of the Optical Response of Optimally P-Doped Si Nanocrystals : A Model for Localized Surface Plasmon Resonance, Physical Review Letters, vol.111, issue.17, p.177402, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00877649
Solid State Physics, 1976. ,
Introduction to solid state physics, 1973. ,
PTx composition diagram and thermodynamics of phase equilibrium in the silicon-phosphorus system, Russian Journal of Inorganic Chemistry, vol.32, issue.5, pp.727-729, 1987. ,
Thermodynamic properties of silicon and germanium mono-phosphides, Inorganic Materials, vol.15, issue.5, pp.578-581, 1979. ,
Dampfdruckuntersuchungen im System Zn Si P. Zeitschrift für anorganische und allgemeine Chemie, vol.425, pp.281-288, 1976. ,
Uber das System Silizium-Phosphor. Zeitschrift fur tallkunde, vol.50, pp.274-277, 1959. ,
Phase diagram study of the Si-P system in Si-rich region, Journal of Materials Research, vol.26, issue.12, pp.1494-1503, 2011. ,
Solid solubilities of impurity elements in germanium and silicon, Bell System Technical Journal, vol.39, issue.1, pp.205-233, 1960. ,
Formation and composition of surface layers and solubility limits of phosphorus during diffusion in silicon, Journal of the Electrochemical Society, vol.111, issue.12, pp.1383-1387, 1964. ,
Individual and joint solubilities of aluminum and phosphorus in germanium and silicon, Russ. J. Inorg. Chem, vol.7, pp.429-431, 1962. ,
Carrier Profile Change for Phosphorus-Diffused Layers on Low-Temperature Heat Treatment, Applied Physics Letters, vol.19, issue.7, pp.218-220, 1971. ,
Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon, Journal of Applied Physics, vol.53, issue.3, pp.1484-1491, 1982. ,
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates, Physical Review B, vol.53, issue.12, pp.7836-7841, 1996. ,
Synthesis and Structural Data of SiP, Acta Chem. Scand, vol.23, pp.2532-2560, 1969. ,
Preparative and crystal-structure studies on orthorhombic silicon monophosphide, Chemica Scripta, vol.8, issue.2, pp.63-69, 1975. ,
The crystal structures of SiP2, SiAs2, and GeP, Acta Chem. Scand, vol.21, issue.2, p.593, 1967. ,
Synthesis of a Pyrite-type modifacation of SiP2, Acta Chem. Scand, vol.21, issue.5, p.1374, 1967. ,
Silicon Phosphide Precipitates in Diffused Silicon, Journal of The Electrochemical Society, vol.111, issue.10, p.1188, 1964. ,
Crystallography of SiP and SiAs Single Crystals and of SiP Precipitates in Si, Journal of Applied Physics, vol.37, issue.13, pp.4683-4687, 1966. ,
High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2d layered semiconductors, Journal of Crystal Growth, vol.443, pp.75-80, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-02104553
Thermal stability and crystallization of amorphous SixBx, SixPx and SiSbx alloy thin films, Thin Solid Films, vol.300, pp.51-58, 1997. ,
Electron microscopy of silicon monophosphide precipitates in P-diffused silicon, Journal of Materials Science, vol.10, issue.2, pp.306-313, 1975. ,
Hentzell. Phase formation sequences in the silicon-phosphorus system : Determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical model, Philosophical Magazine B, vol.75, issue.3, pp.363-376, 1997. ,
Thermal stability and crystallization products of amorphous Si :P alloy thin films made by coevaporation of Si and P, Journal of Applied Physics, vol.76, issue.9, pp.5179-5184, 1994. ,
Two-dimensional SiP : an unexplored direct band-gap semiconductor, 2D Materials, vol.4, issue.1, p.15030, 2016. ,
Ab initio simulation of the fundamental vibrational frequencies of selected pyrite-type pnictides, Chemical Physics Letters, vol.461, issue.1, pp.38-41, 2008. ,
Complete first-order Raman spectra of the pyrite structure compounds FeS2, MnS2 and SiP2, Journal of Physics and Chemistry of Solids, vol.44, issue.9, pp.869-873, 1983. ,
First principles calculations on structure, bonding, and vibrational frequencies of SiP 2 $, The Journal of Chemical Physics, vol.135, issue.12, p.124508, 2011. ,
Heavy phosphorus doping in molecular beam epitaxial grown silicon with a GaP decomposition source, Applied Physics Letters, vol.66, issue.23, p.3197, 1995. ,
High room temperature peak-to-valley current ratio in Si based Esaki diodes, Electronics Letters, vol.35, issue.13, p.1111, 1999. ,
,
Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source, Thin Solid Films, vol.557, pp.70-75, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-00975160
New Development in the Study of Amorphous Silicon Hydrogen Alloys : The Story of O, Physical Review Letters, vol.41, issue.21, pp.1492-1495, 1978. ,
Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition, Journal of Vacuum Science & Technology A, vol.4, issue.3, pp.689-694, 1986. ,
Vibrational local modes of a-SiO2 :H and variation of local modes in different local environments, Journal of Applied Physics, vol.82, issue.12, pp.5976-5982, 1997. ,
Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering, Applied Physics Letters, vol.72, issue.3, pp.356-358, 1998. ,
Étude de la structure et des propriétés optiques de couches minces d'oxydes d'étain dopés avec des terres rares (Ce, Tb, Yb), 2016. ,
Transmission electron microscopy : a textbook for materials science, 2008. ,
Atomic and electronic structure of exfoliated black phosphorus, Journal of Vacuum Science & Technology A : Vacuum, Surfaces, and Films, vol.33, issue.6, p.60604, 2015. ,
Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS, Ultramicroscopy, vol.108, issue.4, pp.346-357, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-01736064
Quantitative electron spectroscopy of surfaces : A standard data base for electron inelastic mean free paths in solids, Surface and Interface Analysis, vol.1, issue.1, pp.2-11, 1979. ,
Structural Investigation of the (001) Surface of the Al 9 $ Co 2 $ Complex Metallic Alloy, The Journal of Physical Chemistry C, vol.115, issue.30, pp.14922-14932, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00974222
Kamins. Dopant segregation in polycrystalline silicon, Journal of Applied Physics, vol.51, issue.11, pp.5755-5763, 1980. ,
Highly stable two-dimensional silicon phosphides : Different stoichiometries and exotic electronic properties, Physical Review B, vol.91, issue.12, p.121401, 2015. ,
A Quantitative Study of Auger Electron Signals of Phosphorus on Silicon Using a Quartz Crystal Microbalance, Journal of Vacuum Science and Technology, vol.9, issue.2, pp.608-611, 1972. ,
Vacuum growth of thin films of ZnSnP2, Solar Cells, vol.21, issue.1-4, pp.291-299, 1987. ,
Sticking coefficient of boron and phosphorus on silicon during vapor-phase doping, Journal of Vacuum Science & Technology A : Vacuum, Surfaces, and Films, vol.19, issue.5, pp.2441-2445, 2001. ,
Auger and photoelectron line energy relationships in aluminum-oxygen and silicon-oxygen compounds, Journal of Vacuum Science and Technology, vol.21, issue.4, pp.933-944, 1982. ,
Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films, Vacuum, vol.81, issue.5, pp.656-662, 2007. ,
Free Carrier Absorption in Silicon, IEEE Journal of Solid-State Circuits, vol.13, issue.1, pp.180-187, 1978. ,
Temperature dependence of the energy gap in semiconductors, Physica, vol.34, issue.1, pp.149-154, 1967. ,
Defects in porous silicon investigated by optically detected and by electron paramagnetic resonance techniques, Applied Physics Letters, vol.63, issue.15, pp.2120-2122, 1993. ,
The effect of surface modification on the luminescence of porous silicon, Journal of Applied Physics, vol.76, issue.9, pp.5327-5333, 1994. ,
Exciton relaxation and radiative recombination in semiconductor quantum dots, Physical Review B, vol.48, issue.23, pp.17637-17640, 1993. ,
Phonons and radiative recombination in self-assembled quantum dots, Physical Review B, vol.52, issue.8, pp.5752-5755, 1995. ,
Identification of radiative transitions in highly porous silicon, Journal of Physics : Condensed Matter, vol.5, issue.7, pp.91-98, 1993. ,
The structural and luminescence properties of porous silicon, Journal of Applied Physics, vol.82, issue.3, pp.909-965, 1997. ,
Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells, Solar Energy Materials and Solar Cells, vol.93, issue.9, pp.1524-1530, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-01067626
A theoretical study of P4o10 : vibrational analysis, infrared and Raman spectra, Spectrochimica Acta Part A : Molecular and Biomolecular Spectroscopy, vol.60, issue.8-9, pp.1947-1955, 2004. ,
Thermochemical Properties Of Phosphorus Compounds, Quarterly Reviews, p.20, 1963. ,
Heat of Combustion of Phosphorus and The Enthalpies of Formation of P4010and H,PO, 1962. ,
Electron-hole droplets and impurity band states in heavily doped Si(P) : Photoluminescence experiments and theory, Physical Review B, vol.14, issue.4, pp.1633-1648, 1976. ,
DOI : 10.1103/physrevb.14.1633
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals, Journal of Materials Chemistry C, vol.4, issue.16, pp.3531-3539, 2016. ,
Growth of native oxide on a silicon surface, Journal of Applied Physics, vol.68, issue.3, pp.1272-1281, 1990. ,
Flux growth of large crystals by accelerated cruciblerotation technique, Journal of Crystal Growth, vol.8, issue.3, pp.304-306, 1971. ,
DOI : 10.1016/0022-0248(71)90078-9
Flux growth and properties of KTiOPO4, Journal of Crystal Growth, vol.70, issue.1-2, pp.484-488, 1984. ,
DOI : 10.1016/0022-0248(84)90306-3
Analysis of vapor-liquid-solid mechanism ,
, Applied Physics Letters, vol.87, issue.20, p.203101, 2005.
Sté-phane Morata, and Fabrice Michel. Mechanism of -FeSi 2 $ precipitates growth-anddissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers, Journal of Applied Physics, vol.117, issue.11, p.115302, 2015. ,
Si) high-frequency dielectric constant, Group IV Elements, pp.1-7, 2001. ,
, Pour de faibles teneurs en phosphore, celle-ci augmente ce qui est interprété par une augmentation de la densité des nanocristaux et par un effet de passivation par le phosphore des états électroniques localisés à l'interface nanocristaux/matrice. Les mesures de photoluminescence à basse température ont permis de mettre en évidence un état électronique lié au phosphore situé à 0,6 eV sous la bande de conduction des nanocristaux de Si. Ce résultat montre qu'il est possible d'incorporer des atomes de phosphore électriquement actifs dans des nanocristaux de Si. Pour des teneurs en phosphore supérieures à 0,3 at.%, l'intensité de photoluminescence des nanocristaux de Si diminue puis disparaît totalement. Cela est lié d'une part à la formation de nanocristaux de Si de tailles supérieures au rayon de Bohr de l, Étude de la structure et des propriétés optiques de films minces de SiP et d'oxydes de silicium riches en phosphore Ce travail de thèse concerne l'étude des propriétés structurales et optiques de films minces de SiP et d'oxyde de silicium riches en phosphore. Dans les films de Si riches en phosphore recuits à 1100?C , la formation de cristallites de SiP coexistant avec des polycristaux de Si est observée
, Les spectroscopies associées à la microscopie électronique en transmission confirment la stoechiométrie du composé SiP 2
, Les propriétés vibrationnelles sont en excellent accord avec des calculs DFT pour l'alliage SiP 2
Couches minces, évaporation, oxyde de silicium, dopage phosphore, nanocristaux de silicium, alliages SiP x . Structural and optical properties of SiP and phosphorus rich silicon oxide thin films ,