Tailoring III-nitrides and 2D boron nitride semiconductors for next generation of optoelectronic devices.

Suresh Sundaram

Accreditation To Supervise Research Year : 2022

Tailoring III-nitrides and 2D boron nitride semiconductors for next generation of optoelectronic devices.

Adaptation des nitrures III et des semi-conducteurs en nitrure de bore 2D pour la prochaine génération de dispositifs optoélectroniques.

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Suresh Sundaram

Function : Author

Georgia Tech Lorraine [Metz]

Keywords

Seemiconductors MOVPE III-nitrides Boron Nitride

le nitrure de bore (BN)

Domains

Engineering Sciences [physics] Physics [physics]

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HDR final updated version 50123.pdf (35.48 Mo)

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Suresh Sundaram : Connect in order to contact the contributor

https://hal.univ-lorraine.fr/tel-03904531

Submitted on : Thursday, January 5, 2023-3:33:18 PM

Last modification on : Thursday, April 13, 2023-9:26:12 AM

Long-term archiving on: Thursday, April 6, 2023-6:17:15 PM

Dates and versions

tel-03904531 , version 1 (05-01-2023)

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HAL Id : tel-03904531 , version 1

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Suresh Sundaram. Tailoring III-nitrides and 2D boron nitride semiconductors for next generation of optoelectronic devices.. Engineering Sciences [physics]. Université de Lorraine, 2022. ⟨tel-03904531⟩

Tailoring III-nitrides and 2D boron nitride semiconductors for next generation of optoelectronic devices.

Adaptation des nitrures III et des semi-conducteurs en nitrure de bore 2D pour la prochaine génération de dispositifs optoélectroniques.

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