Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study - Université de Lorraine Access content directly
Journal Articles Plasma Processes and Polymers Year : 2016

Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

Mathias Haacké
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V. Rouessac
Stephanie Roualdes
Anne Julbe

Abstract

Amorphous non-oxide a-SiCxNy:H thin films have been synthesized at 300 or 500K from an Ar/HMDSN/NH3 gas mixture in a lab-scale microwaves PECVD reactor. These thin films have been characterized by FTIR spectroscopy and spectroscopic ellipsometry coupled with gas adsorption, in order to evidence the influence of PECVD synthesis conditions on the materials composition and microstructure. Deposition at high temperature (500K) was found to yield more inorganic and more compact films in comparison with those obtained at room temperature. In addition, when considering long term aging at room temperature for more than 1 month, the films synthesized at high temperature were found to be more stable toward oxidation in (humid) air.

Dates and versions

hal-01505213 , version 1 (11-04-2017)

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Mathias Haacké, V. Rouessac, Romain Coustel, Stephanie Roualdes, Anne Julbe. Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study. Plasma Processes and Polymers, 2016, 13 (2), pp.258-265. ⟨10.1002/ppap.201500058⟩. ⟨hal-01505213⟩
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