Quasi-ballistic thermal transport in Al0.1Ga0.9N thin film semiconductors

Abstract : We investigate thermal transport in high-quality Al0.1Ga0.9N thin films grown using plasma-assisted molecular beam epitaxy by time-domain thermoreflectance (TDTR) in the 100 K–500K temperature range. The apparent thermal conductivity at 300K and 500K drops by 30% when the laser modulation frequency is increased from 0.8MHz to 10MHz. Tempered Lévy analysis of the quasi-ballistic heat conduction reveals superdiffusion exponents a=1.70+-0.06 at room temperature and a=1.83+-0.16 at 500 K. We describe limitations in concurrent extraction of other model parameters and also discuss the impact of boundary scattering in the 100 K–200K temperature range.
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Applied Physics Letters, American Institute of Physics, 2016, 109 (243107), 243107 / 5p. 〈10.1063/1.4972186〉
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https://hal.univ-lorraine.fr/hal-01536690
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Soumis le : lundi 12 juin 2017 - 10:39:18
Dernière modification le : mercredi 25 avril 2018 - 08:28:01

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Yee Rui Koh, Mohammad Ali Shirazi-Hd, Bjorn Vermeersch, Amr M. S. Mohammed, Jiayi Shao, et al.. Quasi-ballistic thermal transport in Al0.1Ga0.9N thin film semiconductors. Applied Physics Letters, American Institute of Physics, 2016, 109 (243107), 243107 / 5p. 〈10.1063/1.4972186〉. 〈hal-01536690〉

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