4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range -30 degrees C to 150 degrees C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility, temperature and the threshold voltage on transistor properties have been taken into account. The parameters used to define the device were extracted from measurements using MATLAB and datasheet.