Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells - Université de Lorraine Access content directly
Journal Articles Optik Year : 2019

Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Abstract

Taking into consideration the effects of electronic properties (and their behavior under temperature), we present a new numerical model for the determination of the characteristic parameters of the InGaN/GaN multiple quantum well solar cells. Our approach shows that it is possible to enhance the performance of the InGaN/GaN MQW by tuning the electronic properties and by introducing the impact of the polarization of heterostructures with N-face and for an optimal indium composition.
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Dates and versions

hal-02900870 , version 1 (16-07-2020)

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Bilel Chouchen, Asmae El Aouami, Mohamed Hichem Gazzah, Abdullah Bajahzar, El Mustapha Feddi, et al.. Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells. Optik, 2019, 199, pp.163385. ⟨10.1016/j.ijleo.2019.163385⟩. ⟨hal-02900870⟩
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