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Impact of heavy hole levels on the photovoltaic conversion efficiency of In Ga1−N/InN quantum dot intermediate band solar cells

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https://hal.univ-lorraine.fr/hal-02900876
Contributor : Francis Dujardin <>
Submitted on : Thursday, July 16, 2020 - 2:58:00 PM
Last modification on : Tuesday, August 18, 2020 - 12:06:06 PM

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A. El Aouami, K. Feddi, M. El Haouari, M. El Yadri, N. Ben Afkir, et al.. Impact of heavy hole levels on the photovoltaic conversion efficiency of In Ga1−N/InN quantum dot intermediate band solar cells. Superlattices and Microstructures, Elsevier, 2019, 129, pp.202-211. ⟨10.1016/j.spmi.2019.03.026⟩. ⟨hal-02900876⟩

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