Near-forward Raman selection rules for the phonon-polariton in (Zn, Be)Se alloys - Université de Lorraine
Journal Articles Journal of Applied Physics Year : 2016

Near-forward Raman selection rules for the phonon-polariton in (Zn, Be)Se alloys

Abstract

The Raman selection rules of the (Zn-Se, Be-Se)-mixed phonon-polariton (PP) created by “alloying” in the three-mode [1 × (Zn-Se), 2 × (Be-Se)] Zn1−xBexSe system, whose dramatic S-like dispersion (∼200 cm−1) covers the large frequency gap between the Zn-Se and Be-Se spectral ranges, are studied in its wave vector (q) dependence by near-forward Raman scattering. Both the “collapse” regime away from the Γ point (q = 0) and the “reinforcement” regime near Γ are addressed, using appropriate laser lines and Be contents. We find that in both regimes the considered PP, in fact a transverse mode with the mixed mechanical-electrical character, obeys the same nominal Raman selection rules as its purely mechanical variant observed in the standard backscattering geometry. The discussion is supported by contour modeling of the multi-PP Raman lineshapes in their q-dependence within the linear dielectric approach.

Dates and versions

hal-02900944 , version 1 (16-07-2020)

Identifiers

Cite

H. Dicko, Olivier Pagès, F. Firszt, K. Strzałkowski, W. Paszkowicz, et al.. Near-forward Raman selection rules for the phonon-polariton in (Zn, Be)Se alloys. Journal of Applied Physics, 2016, 120 (18), pp.185702. ⟨10.1063/1.4967315⟩. ⟨hal-02900944⟩
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