Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition - Université de Lorraine Access content directly
Journal Articles Scientific Reports Year : 2020

Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition

Abstract

The generic 1-bond → 2-mode "percolation-type" Raman signal inherent to the short bond of common A 1−x B x C semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive "mesoscope" to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale-with a focus on Zn 1−x Cd x Se. The Raman doublet, that distinguishes between the AC-and BC-like environments of the short bond, is reactive to pressure: either it closes (Zn 1−x Be x Se, ZnSe 1−x S x) or it opens (Zn 1−x Cd x Se), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the "closure" case, in which the system resonantly stabilizes ante transition at its "exceptional point" corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity as well as the thermalization rate of photo-generated electrons.
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hal-03004382 , version 1 (13-11-2020)

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M B Shoker, Olivier Pagès, V J B Torres, Alain Polian, J-P Itié, et al.. Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural transition. Scientific Reports, 2020, 10, pp.19803. ⟨10.1038/s41598-020-76509-0⟩. ⟨hal-03004382⟩
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