The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique - Université de Lorraine Access content directly
Journal Articles Materials Research Bulletin Year : 2020

The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique

Abstract

In this study, InGaN/GaN heterostructures were grown using metal organic vapor deposition (MOCVD) at different temperatures (800°C, 750°C and 700°C). The structural, crystallinity, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. From observation, it is found that the indium composition was obtained from XRD through the process of fitting of the simulation. The process of indium incorporation is found to be sensitive to temperature variances. When the temperature is further reduced, the indium incorporation process would become stagnant as the decomposition process of ammonia would be less efficient. FE-SEM images have revealed surface-related defects such as V-pits. The secondary energy gap is obtained from the optical characterization which confirmed the incorporation of indium in the epilayers.
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Dates and versions

hal-03247033 , version 1 (02-06-2021)

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Sauffi Bin Yusof, Zainuriah Hassan, Sha Shiong Ng, Mohd Ahmad Anas, Sahar Md, et al.. The dependence of indium incorporation on specified temperatures in growing InGaN/GaN heterostructure using MOCVD technique. Materials Research Bulletin, 2020, ⟨10.1016/j.materresbull.2020.111176⟩. ⟨hal-03247033⟩
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