Purpose – The purpose of this paper is to investigate the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures. Design/methodology/approach – To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.4 μm undoped-GaN (ud-GaN) and GaN nucleation layer respectively over a commercial 2” c-plane flat sapphire substrate (FSS). The InGaN layers were grown at different temperature setting ranging from 860°C to 820°C in a step of 20°C. The details structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Findings – InGaN/GaN heterostructure with indium composition up to 10.9% has been successfully grown using MOCVD technique without any phase separation detected within the sensitivity of the instrument. Indium compositions were estimated through simulation fitting of XRD curve and calculation of Vegard’s law from UV-Vis measurement. The thickness of the structures was determined using Swanepoel method and the FE-SEM cross-section image. Originality/value – This paper report on the effect of MOCVD growth temperature on the growth process of InGaN/GaN heterostructure which are of interest in solid state lighting technology especially in light emitting diodes (LEDs) and solar cells application.