In this paper, we demonstrate that it is possible to combine two computational approaches, usually used in very different contexts, namely, the Green-Kubo formalism and statistical approaches, to solve the Boltzmann transport equation to calculate the thermal conductivity of semiconductors. In this framework, first the phonon transport is solved by the Monte Carlo method according to the Debye-Callaway or Holland formalisms, then the flux autocorrelation is calculated. This new approach has been implemented to calculate the properties of Si, Ge, GaN, and C (diamond) in an extended temperature range, from 50 to 600 K. The simulation results are compared with those given by experimentation, with very good agreement.