Bismuth telluride alloy films of uniform thickness have been successfully prepared by electrodeposition from a solution containing Bi3+ and HTeO2+ ions in 1 mol dm–3 nitric acid (pH = 0) on stainless steel. The electrodeposited films are monophasic and exhibit a polycrystalline structure (R[3 with combining macron]m). The film composition is dependent on the electrolyte composition and the current density. The electrical properties of the electrodeposited samples have been determined. The obtained films are n-type semiconductors with high carrier concentration.