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Propriétés de luminescence de films d'oxyde de silcium dopés à l'erbium

Abstract : Photoluminescence (PL) at 1.54 µm from erbium is studied in two systems containing silicon clusters. The first one consists of size-controlled silicon nanoclusters (Si-nc) obtained by annealing SiO/SiO2 multilayers. A coupling effect between Si-nc and Er3+ ions has been proved. The Si-nc size effect on PL at 1.54 µm has been also studied. The second system consists of SiOx (x _ 2) films. These films which not contain Si-nc show intense PL at 1.54 µm and the maximum is obtained for the SiO1 sample annealed at 700°C. The origin of this PL is correlated to the structure of the films. Time-resolved PL measurements at room-temperature and at helium temperature have been performed to study the luminescence mechanisms at 1.54 µm.
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Ganye Wora Adeola. Propriétés de luminescence de films d'oxyde de silcium dopés à l'erbium. Autre. Université Henri Poincaré - Nancy 1, 2007. Français. ⟨NNT : 2007NAN10132⟩. ⟨tel-01748228⟩



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