Étude de la photoluminescence de films d'AlN dopé erbium (AlN-Er) déposés par PVD magnétron RF

Abstract : During the last decades, rare-earth-doped III-V thin films have been the subject of growing interest and the topic of many studies. Because III-V nitrides possess a direct gap, they are suitable host matrices to allow rare-earth (RE) luminescence. Thereby, by combining the III-V and the RE characteristics, it becomes possible to consider promising applications in the optoelectronic field. In this study, erbium (Er) was chosen because of its emission both in the visible and in the infrared range. In this work, Er-doped AlN thin films were prepared in an experimental PVD sputtering magnetron radiofrequency reactor. During the deposition, an applied negative bias on the substrate allowed to obtain different kinds of crystalline morphology of the deposited layers, which were studied by several characterization techniques such as AFM, DRX, ellipsometry, MEB, MET. Luminescence properties of the films were investigated both experimentally and with an optical model by photoluminescence (light excitation) spectroscopy. Experimental measurements by cathodoluminescence (electronic excitation) spectroscopy were also performed. This thesis aimed to optimize the elaboration process and the material and to get a better understanding of the influence of AlN host matrix crystalline morphology on the erbium luminescence efficiency. The AlN:Er system stood as a model system and the obtained results could be extended to the other RE
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Jérémy Legrand. Étude de la photoluminescence de films d'AlN dopé erbium (AlN-Er) déposés par PVD magnétron RF. Autre [cond-mat.other]. Université de Lorraine, 2013. Français. ⟨NNT : 2013LORR0186⟩. ⟨tel-01750441⟩

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