Modélisation du transport de phonons dans les semi-conducteurs nanostructurés

Abstract : Since the past decades, progresses in nanomaterials engineering raise new questions about heat transport processes at very short time and space scales. Thermal properties of nanoscaled devices are determined from the resolution of the Boltzmann Transport Equation (BTE) for phonons, which are the main heat carriers in semiconductors. In this study, BTE is solved with a numerical tool based on a statistical method (Monte Carlo) which tracks phonons’ motion in two kinds of nanostructures: nanofilms and nanowires. We focus on the effect of homogeneous and heterogeneous porous materials as well as nanowires with varying diameters. All these devices present interesting prospects regarding thermal conductivity reduction
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Valentin Jean. Modélisation du transport de phonons dans les semi-conducteurs nanostructurés. Autre. Université de Lorraine, 2014. Français. ⟨NNT : 2014LORR0145⟩. ⟨tel-01751012⟩

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