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Etude par spectroscopie DLTS des structures formées sur InP(n) par oxydation plasma

Abstract : The topic of this thesis was the study of Schottky and oxided Schottky diodes formes on n-InP substrate. The passivation process used was the oxidation in plasma environment, we distinguish principally two cases : 1°) oxidation in multipolar plasma using two types of excitation : i) hot cathode excitation ; ii) microwave excitation (ECR). 2°) oxidation downstream the RF plasma region under and without illumination. This study leads to investigate the enrgy distribution of defects, their localisation at the interface between InP and its native oxide, inside the oxide or in the bulk of the semiconductor. DLTS spectra measured on all strucutres shows a wide peak at room temperature. Some anomalies appears on these spectra. Two methods were used to explain these anomalies : i) a two components model ; ii)a single component model which takes into account the leakage current and the variation of the capture cross sections
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Submitted on : Thursday, March 29, 2018 - 1:30:01 PM
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  • HAL Id : tel-01751993, version 1



Mohamed El Bouabdellati. Etude par spectroscopie DLTS des structures formées sur InP(n) par oxydation plasma. Autre [cond-mat.other]. Université Paul Verlaine - Metz, 1994. Français. ⟨NNT : 1994METZ064S⟩. ⟨tel-01751993⟩



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