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Contribution à l'étude des spectres optiques des semi-conducteurs en présence d'une impureté substitutionnelle isoélectronique

Abstract : In this research paper, we have studied the modification of optical absorption spectrum due to the disorder created in the pure systeme by the introduction of the isoelectronic substitutionnal impurity of weak concentration. The interest of this is to have access on the one hand, to symetry points of the Brillouin zone and on the other hand to give a simple and complete interpretation of spectrum optical of diluted alloys. In fact the presence of impurity introduces new structures into the spectrum optical after the break of the lattice periodicity. At the begining we possess the formalism of the dielectric constant of Parlebas and Mills, available in the case of metals and insulator. We have extended this model to a study of binary semiconductors with multiples bands. This study has first been testeed in the case of a binary diatomic chair. In the tridimensional case, we have considered a semi-conductor of the metal type with two independant bands. The study of the differential and spectrum has enableed to show the impurity created from supplementary and lacking structures due either to direct transitions or to indirect transitions. We have shown the activation of these transition find its origine in the electronic structure of the alloys. More over, we have applied the calculation of the dielectric constant to the "4f" (by taking one of the two non dispersive bands of Terre-rare this study enables a qualitative interprétation of absorption spectrum in the Terre-rare system such as SMS during the metallic semi-conductor transition
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  • HAL Id : tel-01775728, version 1



Abdelkrim Chetouane. Contribution à l'étude des spectres optiques des semi-conducteurs en présence d'une impureté substitutionnelle isoélectronique. Matière Condensée [cond-mat]. Université Paul Verlaine - Metz, 1987. Français. ⟨NNT : 1987METZ015S⟩. ⟨tel-01775728⟩



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