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Etude de structures MS et MIS-(n)InP par photoluminescence : effet du champ électrique

Abstract : InP is an attractive III-V compound semiconductor for optoelectronics and high frequency devices, and for high-speed integrated circuits. That explains the extensive researches developed about this compound. In this work, measurements of the band-edge photoluminescence intensity under electrical field are used to characterize metal/semiconductor MS and metal/insulator/semiconductor MIS structures on n-InP. Schottky and oxidized Schottky diodes were studied. Comparison of measured characteristics of these two types of samples shows that the oxydation introduces surface or interface states. These defects can be responsible for at least a partiel pinnig of the surface Fermi level. In the case of oxidized Schottky diodes, using multipolar plasma, the photoluminescence measurements show that the schottky barrier height, deduced from the current-voltage characteristic, must be considered as an effective barrier. For MIS structures obtained by growing native oxide by a plasma bilayer technique, a detailed photoluminescence study in reserve bias region was performed and, by comparison of theoretical curves and experimental results, it is concluded that the surface recombinaison velocity is small. To describe the behaviour of the photoluminescence intensity in accumulation, a model is proposed and discussed. Finally a preliminary study of metal/BN/InP structures is presented
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  • HAL Id : tel-01775980, version 1



Ali Ahaitouf. Etude de structures MS et MIS-(n)InP par photoluminescence : effet du champ électrique. Sciences de l'ingénieur [physics]. Université Paul Verlaine - Metz, 1992. Français. ⟨NNT : 1992METZ019S⟩. ⟨tel-01775980⟩



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